2002 Microchip Technology Inc. DS21355B-page 1
TC110
Features
• Assured Start-up at 0.9V
•50µA (Typ) Supply Current (fOSC = 100kHz)
• 300mA Output Current @ VIN ≥2.7V
•0.5µA Shutdown Mode
• 100kHz and 300kHz Switching Frequency
Options
• Programmable Soft-Start
• 84% Typical Efficiency
• Small Package: 5-Pin SOT-23A
Applications
•Palmtops
• Battery-Operated Systems
• Positive LCD Bias Generators
• Portable Communicators
Device Selection Table
*Other output voltages are available. Please contact
Microchip Technology Inc. for details.
Package Type
General Description
The TC110 is a step-up (Boost) switching controller
that furnishes output currents of up to 300mA while
delivering a typical efficiency of 84%. The TC110
normally operates in pulse width modulation mode
(PWM), but automatically switches to pulse frequency
modulation (PFM) at low output loads for greater
efficiency. Supply current draw for the 100kHz version
is typically only 50µA, and is reduced to less than
0.5µA when the SHDN input is brought low. Regulator
operation is suspended during shutdown. The TC110
accepts input voltages from 2.0V to 10.0V, with a
guaranteed start-up voltage of 0.9V.
The TC110 is available in a small 5-Pin SOT-23A
package, occupies minimum board space and uses
small external components (the 300kHz version allows
for less than 5mm surface-mount magnetics).
Functional Block Diagram
Part
Number
Output
Voltage
(V)* Package Osc.
Freq.
(kHz)
Operating
Temp.
Range
TC110501ECT 5.0 5-Pin SOT-23A 100 -40°Cto+85°C
TC110331ECT 3.3 5-Pin SOT-23A 100 -40°Cto+85°C
TC110301ECT 3.0 5-Pin SOT-23A 100 -40°Cto+85°C
TC110503ECT 5.0 5-Pin SOT-23A 300 -40°Cto+85°C
TC110333ECT 3.3 5-Pin SOT-23A 300 -40°Cto+85°C
TC110303ECT 3.0 5-Pin SOT-23A 300 -40°Cto+85°C
TC110
123
54
VDD
EXT GND
5-Pin SOT-23A
NOTE: 5-Pin SOT-23A is equivalent to the EIAJ SC-74A
VOUT SHDN/SS
54
TC110
13
2
3V to 5V Supply
SHDN/SS
VDD
EXT GND
IN5817
D1
47µF
Tantalum
Si9410DY
47µH
10µF
Battery
3V
VOUT
VOUT
R
*RC Optional
C
ON
OFF
+
+
+
–
PFM/PWM Step-Up DC/DC Controller
TC110
DS21355B-page 2
2002 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Voltage on VDD,V
OUT, SHDN Pins ........-0.3V to +12V
EXT Output Current ...................................±100mA pk
Voltage on EXT Pin........................-0.3V to VDD +0.3V
Power Dissipation.............................................150mW
Operating Temperature Range.............-40°C to +85°C
Storage Temperature Range..............-40°C to +125°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC110 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Note 1, VIN =0.6xV
R,V
DD =V
OUT,T
A=25°C, unless otherwise noted.
Symbol Parameter Min Typ Max Units Test Conditions
VDD Operating Supply Voltage 2.0 — 10.0 V Note 2
VSTART Start-Up Supply Voltage — — 0.9 V IOUT =1mA
VHOLD-UP Oscillator Hold-Up Voltage — — 0.7 V IOUT =1mA
IDD Boost Mode Supply Current —
—
—
—
—
—
120
130
180
50
50
70
190
200
280
90
100
120
µAV
OUT = SHDN = (0.95 x VR);fOSC =300kHz;V
R=3.0V
VR=3.3V
VR=5.0V
fOSC = 100kHz; VR=3.0V
VR=3.3V
VR=5.0V
ISTBY Standby Supply Current —
—
—
—
—
—
20
20
22
11
11
11
34
35
38
20
20
22
µAV
OUT = SHDN =(V
R+0.5V);f
OSC =300kHz;V
R=3.0V
VR=3.3V
VR=5.0V
fOSC = 100kHz; VR=3.0V
VR=3.3V
VR=5.0V
ISHDN Shutdown Supply Current — 0.05 0.5 µA SHDN =GND,V
O=(V
Rx0.95)
fOSC Oscillator Frequency 255
85 300
100 345
115 kHz VOUT = SHDN = (0.95 x VR);fOSC =300kHz
fOSC = 100kHz
VOUT Output Voltage VR
x0.975 VRVR
x1.025 VNote3
DTYMAX Maximum Duty Cycle
(PWM Mode) ——92%V
OUT = SHDN =0.95xV
R
DTYPFM Duty Cycle (PFM Mode) 15 25 35 % IOUT =0mA
VIH SHDN Input Logic High 0.65 — — V VOUT =(V
Rx0.95)
VIL SHDN Input Logic Low — — 0.20 V VOUT =(V
Rx0.95)
REXTH EXT ON Resistance to VDD —
—
—
32
29
20
47
43
29
ΩVOUT = SHDN =(V
Rx0.95);V
R=3.0V
VR=3.3V
VEXT =(V
OUT –0.4V) V
R=5.0V
REXTL EXT ON Resistance to GND —
—
—
20
19
13
30
27
19
ΩVOUT = SHDN =(V
Rx0.95);V
R=3.0V
VR=3.3V
VEXT =0.4V V
R=5.0V
ηEfficiency — 84 — %
Note 1: VR=3.0V,I
OUT =120mA
VR=3.3V,I
OUT =130mA
VR=5.0V,I
OUT =200mA
2: See Application Notes “Operating Mode” description for clarification.
3: VRis the factory output voltage setting.
2002 Microchip Technology Inc. DS21355B-page 3
TC110
2.0 PIN DESCRIPTIONS
ThedescriptionsofthepinsarelistedinTable2-1.
TABLE 2-1: PIN FUNCTION TABLE
Pin No.
(5-Pin SOT-23A) Symbol Description
1V
OUT Internal device power and voltage sense input. This dual function input provides both feedback
voltage sensing and internal chip power. It should be connected to the regulator output. (See
Section 4.0, Applications).
2V
DD Power supply voltage input.
3 SHDN/SS Shutdown input. A logic low on this input suspends device operation and supply current is
reducedtolessthan0.5µA. The device resumes normal operation when SHDNis again brought
high. An RC circuit connected to this input also determines the soft-start time.
4 GND Ground terminal.
5 EXT External switch transistor drive complimentary output. This pin drives the external switching
transistor. It may be connected to the base of the external bipolar transistor or gate of the external
N-channel MOSFET. (See Section 4.0, Applications).
TC110
DS21355B-page 4
2002 Microchip Technology Inc.
3.0 DETAILED DESCRIPTION
The TC110 is a PFM/PWM step-up DC/DC controller
for use in systems operating from two or more cells, or
in low voltage, line-powered applications. It uses PWM
as the primary modulation scheme, but automatically
converts to PFM at output duty cycles less than
approximately 25%. The conversion to PFM provides
reduced supply current, and therefore higher operating
efficiency at low loads. The TC110 uses an external
switching transistor, allowing construction of switching
regulators with maximum output currents of 300mA.
The TC110 consumes only 70µA, typical, of supply
current and can be placed in a 0.5µA shutdown mode
by bringing the shutdown input (SHDN) low. The
regulator remains disabled while in shutdown mode,
and normal operation resumes when SHDN is brought
high. Other features include start-up at VIN = 0.9V and
an externally programmable soft start time.
3.1 Operating Mode
The TC110 is powered by the voltage present on the
VDD input. The applications circuits of Figure 3-1 and
Figure 3-2 show operation in the bootstrapped and
non-bootstrapped modes. In bootstrapped mode, the
TC110 is powered from the output (start-up voltage is
supplied by VIN through the inductor and Schottky
diode while Q1 is off). In bootstrapped mode, the
switching transistor is turned on harder because its
gate voltage is higher (due to the boost action of the
regulator), resulting in higher output current capacity.
The TC110 is powered from the input supply in the non-
bootstrapped mode. In this mode, the supply current to
the TC110 is minimized. However, the drive applied to
the gate of the switching transistor swings from the
input supply level to ground, so the transistor’s ON
resistance increases at low input voltages. Overall
efficiency is increased since supply current is reduced,
and less energy is consumed charging and discharging
the gate of the MOSFET. While the TC110 is guaran-
teed to start up at 0.9V the device performs to
specifications at 2.0V and higher.
3.2 Low Power Shutdown Mode
The TC110 enters a low power shutdown mode when
SHDN is brought low. While in shutdown, the oscillator
is disabled and the output switch (internal or external)
is shut off. Normal regulator operation resumes when
SHDN is brought high. SHDN maybetiedtotheinput
supply if not used.
Note: Because the TC110 uses an external diode,
a leakage path between the input voltage
and the output node (through the inductor
and diode) exists while the regulator is in
shutdown. Care must be taken in system
design to assure the input supply is isolated
from the load during shutdown.
3.3 Soft Start
Soft start allows the output voltage to gradually ramp
from 0V to rated output value during start-up. This
action minimizes (or eliminates) overshoot, and in
general, reduces stress on circuit components.
Figure 3-3 shows the circuit required to implement soft
start (values of 470K and 0.1µFforR
SS and CSS,
respectively, are adequate for most applications).
3.4 Input Bypass Capacitors
Using an input bypass capacitor reduces peak current
transients drawn from the input supply and reduces the
switching noise generated by the regulator. The source
impedance of the input supply determines the size of
the capacitor that should be used.
2002 Microchip Technology Inc. DS21355B-page 5
TC110
FIGURE 3-1: BOOTSTRAPPED OPERATION
FIGURE 3-2: NON-BOOTSTRAPPED OPERATION
FIGURE 3-3: SOFT START/SHUTDOWN CIRCUIT
54
TC110XX
13
2
VOUT
EXT GND
D1
IN5817
C2
47µF
L1
100µH
VOUT
OFF ON
n
MTP3055EL
C1
33µF
VIN
SHDN
VDD
+
–
54
TC110XX
13
2
VOUT
EXT GND
D1
IN5817
C2
47µF
L1
100µH
VOUT
OFF ON
n
MTP3055EL
C1
33µF
VIN
SHDN
VDD
+
–
TC110XX
3
SHDN/SS
CSS
0.1µF
SHDN
RSS
470K
VIN
TC110XX
3
SHDN/SS
CSS
0.1µF
RSS
470K
Shutdown Used
Shutdown Not Used
TC110
DS21355B-page 6
2002 Microchip Technology Inc.
3.5 Output Capacitor
The effective series resistance of the output capacitor
directly affects the amplitude of the output voltage
ripple. (The product of the peak inductor current and
the ESR determines output ripple amplitude.) There-
fore, a capacitor with the lowest possible ESR should
be selected. Smaller capacitors are acceptable for light
loads or in applications where ripple is not a concern.
The Sprague 595D series of tantalum capacitors are
among the smallest of all low ESR surface mount
capacitors available. Table 4-1 lists suggested
components and suppliers.
3.6 Inductor Selection
Selecting the proper inductor value is a trade-off
between physical size and power conversion require-
ments. Lower value inductors cost less, but result in
higher ripple current and core losses. They are also
more prone to saturate since the coil current ramps
faster and could overshootthe desired peak value. This
not only reduces efficiency, but could also cause the
current rating of the external components to be
exceeded. Larger inductor values reduce both ripple
current and core losses, but are larger in physical size
and tend to increase the start-up time slightly.
A22µH inductor is recommended for the 300kHz
versions and a 47µH inductor is recommended for the
100kHz versions. Inductors with a ferrite core (or
equivalent) are also recommended. For highest
efficiency, use inductors with a low DC resistance (less
than 20 mΩ).
The inductor value directly affects the output ripple
voltage. Equation 3-3 is derived as shown below, and
can be used to calculate an inductor value, given the
required output ripple voltage and output capacitor
series resistance:
EQUATION 3-1:
where ESR is the equivalent series resistance of the
output filter capacitor, and VRIPPLE is in volts.
Expressing di in terms of switch ON resistance and
time:
EQUATION 3-2:
Solving for L:
EQUATION 3-3:
Care must be taken to ensure the inductor can handle
peak switching currents, which can be several times
load currents. Exceeding rated peak current will result
in core saturation and loss of inductance. The inductor
should be selected to withstand currents greater than
IPK (Equation 3-10) without saturating.
Calculating thepeak inductor current is straightforward.
Inductor current consists of an AC (sawtooth) current
centered on an average DC current (i.e., inputcurrent).
Equation 3-6 calculates the average DC current. Note
that minimum input voltage and maximum load current
values should be used:
EQUATION 3-4:
Re-writing in terms of input and output currents and
voltages:
EQUATION 3-5:
Solving for input curent:
EQUATION 3-6:
The sawtooth current is centered on the DC current
level; swinging equally above and below the DC current
calculated in Equation 3-6.The peak inductor current is
the sum of the DC current plus half the AC current.
Note that minimum input voltage should be used when
calculating the AC inductor current (Equation 3-9).
EQUATION 3-7:
EQUATION 3-8:
EQUATION 3-9:
where: VSW =V
CESAT oftheswitch(noteifaCMOS
switch is used substitute VCESAT for rDSON xI
IN)
Combining the DC current calculated in Equation 3-6,
with half the peak AC current calculated in Equation 3-
9, the peak inductor current is given by:
EQUATION 3-10:
VRIPPLE ≈ESR(di)
VRIPPLE ≈ESR [(VIN –V
SW)tON]
L
≈ESR [(VIN –V
SW)tON]
VRIPPLE
L
=
Output Power
Efficiency
Input Power
(VOUTMAX)(I
OUTMAX)
Efficiency
(VINMIN)(I
INMAX)=
(VOUTMAX)(IOUTMAX)
(Efficiency)(VINMAX)
IINMAX =
=L(di)
dt
V
=V(dt)
dt
di
[(VINMIN –V
SW)tON]
L
di =
I
PK
=I
IN
MAX
+0.5(di)
2002 Microchip Technology Inc. DS21355B-page 7
TC110
3.7 Output Diode
For best results, use a Schottky diode such as the
MA735, 1N5817, MBR0520L or equivalent. Connect
the diode between the FB (or SENSE) inputas close to
the IC as possible. Do not use ordinary rectifier diodes
since the higher threshold voltages reduce efficiency.
3.8 External Switching Transistor
Selection
The EXT output is designed to directly drive an
N-channel MOSFET or NPN bipolar transistor. N-
channel MOSFETs afford the highest efficiency
because they do not draw continuous gate drive
current, but are typically more expensive than bipolar
transistors. If using an N-channel MOSFET, the gate
should be connected directly to the EXT output as
shown in Figure 3-1 and Figure 3-1. EXT is a compli-
mentary outputwith a maximum ON resistances of 43Ω
to VDD when high and 27Ωto ground when low. Peak
currents should be kept below 10mA.
When selecting an N-channel MOSFET, there are three
important parameters to consider: total gate charge
(Qg); ON resistance (rDSON) and reverse transfer
capacitance (CRSS). Qg is a measure of the total gate
capacitance that will ultimately load the EXT output.
Too high a Qg can reduce the slew rate of the EXT
output sufficiently to grossly lower operating efficiency.
Transistors with typical Qg data sheet values of 50nC
or less can be used. For example, the Si9410DY has a
Qg (typ) of 17nC @ VGS = 5V. This equates to a gate
current of:
IGATEMAX =f
MAX x Qg = 115kHz x 17nC = 2mA
The two most significant losses in the N-channel
MOSFET are switching loss and I2R loss. To minimize
these, a transistor with low rDSON and low CRSS should
be used.
Bipolar NPN transistors can be used, but care must be
taken when determining base current drive. Too little
current will not fully turn the transistor on, and result in
unstable regulator operation and low efficiency. Too
high a base drive causes excessive power dissipation
in the transistor and increase switching time due to
over-saturation. For peak efficiency, make RBas large
as possible, but still guaranteeing theswitching transis-
tor is completely saturated when the minimum value of
hFE is used.
3.9 Board Layout Guidelines
As with all inductive switching regulators, the TC110
generates fast switching waveforms which radiate
noise. Interconnecting lead lengths should be mini-
mized to keep stray capacitance, trace resistance and
radiated noise as low as possible. In addition, the GND
pin, input bypass capacitor and output filter capacitor
ground leads should be connected to a single point.
The inputcapacitor should be placedas close to power
and ground pins of the TC110 as possible.
TC110
DS21355B-page 8
2002 Microchip Technology Inc.
4.0 APPLICATIONS
4.1 Circuit Examples
Figure 4-1 shows a TC110 operating as a 100kHz
bootstrapped regulator with soft start. This circuit uses
an NPN switching transistor (Zetex FZT690B) that has
an hFE of 400 and VCESAT of 100 mV at IC= 1A. Other
high beta transistors can be used, but the values of RB
and CBmay need adjustment if hFE is significantly
different from that of the FZT690B.
Figure 4-2 and Figure 4-3 both utilize an N-channel
switching transistor (Silconix Si9410DY). This transistor
is a member of the LittlefootTM family of small outline
MOSFETs. The circuit of Figure 4-2 operates in
bootstrapped mode, while the circuit of Figure 4-3
operates in non-bootstrapped mode.
TABLE 4-1: SUGGESTED COMPONENTS AND SUPPLIERS
Type Inductors Capacitors Diodes Transistors
Surface Mount Sumida
CD54 Series (300kHz)
CD75 (100kHz)
Coiltronics
CTX Series
Matsuo
267 Series
Sprague
595D Series
Nichicon
F93 Series
Nihon
EC10 Series
Matsushita
MA735 Series
N-channel
Silconix
Si9410DY
ON Semiconductor
MTP3055EL
MTD20N03
Through-Hole Sumida
RCH855 Series
RCH110 Series
Renco
RL1284-12
Sanyo
OS-CON Series
Nichicon
PL Series
ON Semiconductor
1N5817 - 1N5822 NPN
Zetex
ZTX694B
2002 Microchip Technology Inc. DS21355B-page 9
TC110
FIGURE 4-1: 100kHz BOOTSTRAPPED REGULATOR WITH SOFT START USING
A BIPOLAR TRANSISTOR
FIGURE 4-2: 300kHz BOOTSTRAPPED, N-CHANNEL TRANSISTOR
FIGURE 4-3: 300kHz NON-BOOTSTRAPPED, N-CHANNEL TRANSISTOR
TC110301
CIN
10µF/16V
VIN
EXT
VOUT
VOUT
D1
Matsushita
MA737
123
4
5
Q1
FZT690BCT
RB
1K
CB
10nF
Ceramic
L1
47µH
Sumida CD75
COUT
47µF, 10V
Tant.
SHUTDOWN
(Optional)
RSS
470K
CSS
0.1µF
Ceramic
TC110301
GND
VDD
SHDN/SS
12 3
4
5
CIN
10µF/16V
VIN
EXT
VOUT
VOUT
D1
ON Semiconductor
MBR0520L
Q1
Silconix
Si9410DY
L1
22µH
Sumida CD54
COUT
47µF, 16V
Tant.
GND
VDD
SHDN/SS
TC110303
12 3
4
5
C
IN
10µF/16V
V
IN
EXT
V
OUT
V
OUT
D1
ON Semiconductor
MBR0520L
Q1
Silconix
Si9410DY
L1
22µH
Sumida CD54
C
OUT
47µF, 16V
Tant.
GND
V
DD
SHDN/SS
TC110303
TC110
DS21355B-page 10
2002 Microchip Technology Inc.
5.0 TYPICAL CHARACTERISTICS
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
OU
TP
U
T
CU
RRENT
I
OUT
(
mA
)
3
.
0
0
.
1
1
1
0
1
00
1
3
.
1
3
.
2
3
.
3
3
.
4
3
.
5
OUTPUT VOLTAGE (V
OUT
) (V)
L
=
22
µ
H
,
CL = 9
4
µ
F
(
Tantalum
)
V
IN
=
0
.
9V
1.2V
1.
8V
1.5V 2.0V
2.7V
Output Voltage vs. Output Current
TC110
(
300kHz, 3.3V
)
OU
TP
U
T
CU
RRENT
I
OUT
(
mA
)
L
=
22
µ
H
,
CL = 9
4
µ
F
(
Tantalum
)
Efficiency vs. Output Current
TC110
(
300kHz, 3.3V
)
0
0
.
1
1
1
0
1
00
1
2
0
4
0
60
80
1
00
E
FFICIENCY
(
%
)
V
IN
=
0
.
9V
1.2V
1.
8V
1
.
5V
2.
0V
2.7V
2002 Microchip Technology Inc. DS21355B-page 11
TC110
6.0 PACKAGING INFORMATION
6.1 Package Marking Information
Symbol
(100kHz) Symbol
(300kHz) Voltage
B11.
C22.
D33.
E44.
F55.
H66.
Symbol
(100kHz) Symbol
(300kHz) Voltage
0A.0
1B.1
2C.2
3D.3
4E.4
5F.5
6H.6
7K.7
8L.8
9M.9
1represents product classification; TC110 = M
2represents first integer of voltage and frequency
3represents first decimal of voltage and frequency
4represents production lot ID code
TC110
DS21355B-page 12
2002 Microchip Technology Inc.
6.2 Taping Form
6.3 Package Dimensions
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices
Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size
5-Pin SOT-23A 8 mm 4 mm 3000 7 in
Carrier Tape, Number of Components Per Reel and Reel Size
User Direction of Feed
Device
Marking
PIN 1
Standard Reel Component Orientation
TR Suffix Device
(Mark Right Side Up)
W
P
.071 (1.80)
.059 (1.50)
.122 (3.10)
.098 (2.50)
.075 (1.90)
REF.
.020 (0.50)
.012 (0.30)
PIN 1
.037 (0.95)
REF.
.122 (3.10)
.106 (2.70)
.057 (1.45)
.035 (0.90)
.006 (0.15)
.000 (0.00)
.024 (0.60)
.004 (0.10)
10° MAX. .010 (0.25)
.004 (0.09)
SOT-23A-5
Dimensions: inches (mm)
2002 Microchip Technology Inc. DS21355B-page13
TC110
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
TC110
DS21355B-page14 2002 Microchip Technology Inc.
NOTES:
2002 Microchip Technology Inc. DS21355B-page 15
TC110
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com-
ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con-
veyed, implicitly or otherwise, under any intellectual property
rights.
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KEELOQ,microID,MPLAB,PIC,PICmicro,PICMASTER,
PICSTART, PRO MATE, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip Tech-
nologyIncorporated in the U.S.A. and other countries.
dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro®8-bit MCUs, KEELOQ®code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
DS21355B-page 16
2002 Microchip Technology Inc.
AMERICAS
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Rocky Mountain
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-7456
Atlanta
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770-640-0034 Fax: 770-640-0307
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Chicago
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071 Fax: 630-285-0075
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423 Fax: 972-818-2924
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Kokomo
2767 S. Albright Road
Kokomo, Indiana 46902
Tel: 765-864-8360 Fax: 765-864-8387
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
New York
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
ASIA/PACIFIC
Australia
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
China - Beijing
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
China - Chengdu
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-86766200 Fax: 86-28-86766599
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-2350361 Fax: 86-755-2366086
China - Hong Kong SAR
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
India
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Japan
Microchip Technology Japan K.K.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology Taiwan
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
05/01/02
WORLDWIDE SALES AND SERVICE