BYW51-100, BYW51-150, BYW51-200 S E M I C O N D U C T O R 8A, 100V - 200V Ultrafast Dual Diodes August 1995 Features Package * Ultra Fast Recovery Time (<35ns) JEDEC TO-220AB ANODE 1 CATHODE ANODE 2 * Low Forward Voltage * Low Thermal Resistance CATHODE (FLANGE) * Planar Design * Wire-Bonded Construction Applications * General Purpose Symbol * Power Switching Circuits to 100kHz K * Full-Wave Rectification Description The BYW51 series devices are low forward voltage drop, ultra-fast-recovery rectifiers (tRR < 35ns). They use a planar ion-implanted epitaxial construction. A1 These devices are intended for use as output rectifiers and fly-wheel diodes in a variety of high-frequency pulse-widthmodulated and switching regulators. Their low stored charge and attendant fast reverse-recovery behavior minimize electrical noise generation and in many circuits markedly reduce the turn-on dissipation of the associated power switching transistors. A2 PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND BYW51-100 TO-220AB BYW51100 BYW51-150 TO-220AB BYW51150 BYW51-200 TO-220AB BYW51200 NOTE: When ordering, use the entire part number. Absolute Maximum Ratings Per Junction BYW51-100 BYW51-150 BYW51-200 UNITS Maximum Peak Repetitive Reverse Voltage . . . . . . . . . . . VRRM 100 150 200 V Maximum Peak Surge Voltage . . . . . . . . . . . . . . . . . . . . . . VRSM Repetitive Peak Surge Current. . . . . . . . . . . . . . . lFRM, tP < 10s 110 165 220 V 100 100 100 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . lF(RMS), Total 20 20 20 A Average Rectified forward Current . . . . . . . . . . . . . . .lF(AV), Total TC = +125oC, a = 0.5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 8 A Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . lFSM tP = 10ms, Sinusoidal 100 100 100 A Maximum Power Dissipation . . . . . . . . . . . . . . PD, TC = +125oC 20 20 20 W Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . TJ -40 + 150 -40 + 150 -40 + 150 oC TL (Lead Temperature During Soldering) . . . . . . . . . . . . . . . . . . . At Distance > 1/8 in. (3.17mm) From Case For 10s max. 260 260 260 oC Copyright (c) Harris Corporation 1995 File Number 6-5 1412.2 Specifications BYW51-100, BYW51-150, BYW51-200 Electrical Specifications Per Junction TEST CONDITIONS LIMITS TJ o C VOLTAGE VR V CURRENT iF A MIN MAX MIN MAX MIN MAX UNITS 25 100 - - 5 - - - - A 150 - - - - 5 - - A 200 - - - - - - 5 A 100 - - 1 - - - - mA 150 - - - - 1 - - mA 200 - - - - - - 1 mA 25 - 8 - 0.95 - 0.95 - 0.95 V 100 - 8 - 0.89 - 0.89 - 0.89 V 25 - 1 (Note 1) - 35 - 35 - 35 ns RJC, Per Leg - - - 2.5 - 2.5 - 2.5 oC/W RJC, Total - - - 1.3 - 1.3 - 1.3 oC/W RJA - - - 60 - 60 - 60 oC/W 10 0 SYMBOL IR 100 VF tRR CJ 25 BYW51-100 BYW51-150 All types (typ.) 40 NOTE: 1. dIF/dt > 50A/s, IRM(rec) <1A, IRR = 0.25A. 6-6 BYW51-200 pF BYW51-100, BYW51-150, BYW51-200 Typical Performance Curves 4.0 REAPPLIED VR(PK) = VRM 3.5 140 RJC , THERMAL IMPEDANCE (oC/W) IFSM , PEAK SURGE (NON-REPETITIVE) FORWARD CURRENT (A) 160 120 100 80 TJ = 100oC 60 40 20 3.0 2.5 2.0 1.5 1.0 0.5 0 1 10 0 100 1 N, NUMBER OF HALF-CYCLES IN SURGE DURATION AT 50Hz 10 FIGURE 1. PEAK SURGE FORWARD CURRENT vs SURGE DURATION FIGURE 2. THERMAL IMPEDANCE vs PULSE WIDTH (PER JUNCTION) 100 10,000 TJ = -55oC TJ = +150oC TJ = +25oC 10 IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 1000 100 tP , PULSE WIDTH (ms) TJ = +100oC TJ = +125oC 1 TJ = +150oC 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1000 100 TJ = +100oC 10 1 TJ = +25oC 0.1 0.01 0.01 1.6 TJ = +125oC 0.1 1 10 100 1000 VRM , VOLTAGE IN % RATED VRRM (V) VF , FORWARD VOLTAGE DROP (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE 6-7