©2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2
HGTG30N60B3D
60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HG TG30N60B3D is a MOS gated high voltage switching
device co mbini ng the be st featur es of MOSFETs and bipo lar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transist or. Th e much lower on-stat e voltage dr op varies only
moderat ely b etwee n 25oC a nd 15 0oC. The IGBT u sed i s the
development type TA49170. The diode used in anti-parallel
with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49172.
Features
• 60A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150oC
• Short Circ uit R ating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging JEDEC STYLE TO-247
Symbol
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG30N60B3D TO-247 G30N60B3D
NOTE: When ordering, use the entire part number.
G
C
E
C
E
G
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet April 2004
©2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG30N60B3D UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I C25 60 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 30 A
Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC(AVG) 25 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 220 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD208 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC
Operating and St orage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs
CAUTION : Stresses above thos e listed in “Abs olute Max imum Ratings” may cause perm anent dam age to the devi ce. This is a stress on ly rating an d operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 3Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA
TC = 150oC--3mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110,
VGE = 15V TC = 25oC - 1.45 1.9 V
TC = 150oC-1.72.1V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = VGE 4.2 5 6 V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 3Ω,
VGE = 15V, L = 100µH VCE ( PK) = 480V 200 - - A
VCE (PK) = 600V 60 - - A
Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES -7.2- V
On-State Gate Charge QG(ON) IC = IC110,
VCE = 0.5 BVCES VGE = 15V - 170 190 nC
VGE = 20V - 230 250 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC,
ICE = IC110,
VCE = 0.8 BVCES,
VGE = 15V,
RG = 3Ω,
L = 1mH,
Test Circuit (Figure 19)
-36- ns
Current Rise Time trI -25- ns
Current Turn-Off Delay Time td(OFF)I - 137 - ns
Current Fall Time tfI -58- ns
Turn-On Energy EON - 550 800 µJ
Turn-Off Energy (Note 3) EOFF - 680 900 µJ
HGTG30N60B3D
©2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150oC,
ICE = IC110,
VCE = 0.8 BVCES,
VGE = 15V,
RG = 3Ω,
L = 1mH,
Test Circuit (Figure 19)
-32- ns
Current Rise Time trI -24- ns
Current Turn-Off Delay Time td(OFF)I - 275 320 ns
Current Fall Time tfI - 90 150 ns
Turn-On Energy EON - 1300 1550 µJ
Turn-Off Energy (Note 3) EOFF - 1600 1900 µJ
Diode Forward Voltage VEC IEC = 30A - 1.95 2 .5 V
Diode Reverse Recovery Time trr IEC = 1A, dIEC/dt = 200A/µs - 32 40 ns
IEC = 30A, dIEC/dt = 200A/µs - 45 55 ns
Thermal Resistance Junction To Case RθJC IGBT - - 0.6 oC/W
Diode - - 1.3 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is def ined as the integral of the instantaneous powe r loss starting at the trailing edge of the input pul se and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Ty pical Performance Curves Unless Otherwise Specified
FIGU RE 1. DC COLLE CTOR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
10
0
40
20
30
50
60 VGE = 15V
25 75 100 125 150
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
125
700
75
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
50
300 400200100 500 600
100
0
150
175
200
225 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH
HGTG30N60B3D
©2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2
FIGURE 3. OPERA TING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR TO EMIT TE R ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMIT TE R ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR T O
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR T O
EMITTER CURRENT
Ty pical Performance Curves Unless Otherwise Specified (Continued)
fMAX, OPERATING FREQUENCY (kHz)
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
1
0.1
10
6020 40
100
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RθJC = 0.6oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON + EOFF)
TCVGE
110oC10V
15V
15V
75oC
110oC
75oC 10V
10
TJ = 150oC, RG = 3Ω, L = 1mH,
VCE = 480V
VGE, GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12 13 14 15
6
8
10
12
16
20
14
150
200
250
300
350
400
500
tSC
ISC
18 450
VCE = 360V, RG = 3Ω, TJ = 125oC
024
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
25
50
75
6810
150
125
100
175 TC = -55oCTC = 150oC
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
225
200
TC = 25oC
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
200
250
300
350
012
0
150
345
100
50
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
TC = -55oC
TC = 150oC
TC = 25oC
67
EON, TURN-ON ENERGY LOSS (mJ)
5
3
ICE, COLLECTOR TO EMITTER CURRENT (A)
4
2
1
4020 60503010
6
0
TJ = 25oC, TJ = 150oC, VGE = 10V
RG = 3Ω, L = 1mH, VCE = 480V
TJ = 25oC, TJ = 150oC, VGE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (mJ)
0
0.5
503020 40 6010
1.0
2.5
RG = 3Ω, L = 1mH, VCE = 480V
TJ = 150oC, VGE = 10V OR 15V
TJ = 25oC, VGE = 10V OR 15V
2.0
1.5
3.0
3.5
4.0
4.5
HGTG30N60B3D
©2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 1 1. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
Ty pical Performance Curves Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
tdI, TURN-ON DELAY TIME (ns)
2010 30 50
25
30
35
40
45
50
40
55
60
TJ = 25oC, TJ = 150oC, VGE = 10V
TJ = 25oC, TJ = 150oC, VGE = 15V
RG = 3Ω, L = 1mH, VCE = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI,RISE TIME(ns)
20
0
50
250
200
100
6010
150
504030
RG = 3Ω, L = 1mH, VCE = 480V
TJ = 25oC, TJ = 150oC, VGE = 10V
TJ = 25oC, TJ = 150oC, VGE = 15V
20 30 6010
250
300
5040
100
200
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
TJ = 25oC, VGE = 10V, VGE = 15V
TJ = 150oC, VGE = 10V, VGE = 15V
RG = 3Ω, L = 1mH,
VCE = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
20 30 6010
40
100
120
5040
60
80
TJ = 150oC, VGE = 10V AND 15V
TJ = 25oC, VGE = 10V AND 15V
RG = 3Ω, L = 1mH, VCE = 480V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
50
100
150
5789106
VGE, GATE TO EMITTER VOLTAGE (V) 11
200
250
300
4
TC = 150oC
TC = 25oC
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VCE = 10V
TC = -55oC
QG, GATE CHARGE (nC)
0
8
10
6
4
2
050
VGE, GATE TO EMITTER VOLTAGE (V)
VCE = 400V
VCE = 600V
150 200100
12
14
16
VCE = 200V
Ig (REF) = 1mA, RL = 10Ω, TC = 25oC
HGTG30N60B3D
©2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 17. DIODE FORW ARD CURRENT vs FORW ARD
VOLTAGE DROP FIGURE 18. RECOVERY TIME vs FORWARD CURRENT
Ty pical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
C, CAPACI TANCE (nF)
2
4
6
8
10
CRES
FREQUENCY = 1MHz
COES
CIES
ZθJC, NORMALIZED THERMAL RESPONSE
t1, RECTANGULAR PULSE DURATION (s)
10-5 10-3 100101
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-1
10-2
SINGLE PULSE
100
10-1
10-2
PD
t1
t2
0.50
0.05
0.01
0.02
0.10
0.20
IEC, FORWARD CURRENT (A)
VEC, FORWARD VOLT AGE (V)
3.02.0 2.51.51.00.50
0
25
50
75
100
125
3.5 4.0
150
175
200
100oC
25oC
-55oC
30
40
20
0
t, RECOVERY TIMES (ns)
IEC, FORWARD CURRENT (A)
2301
10
10 20
50
5
trr
ta
tb
TC = 25oC, dIEC/dt = 200A/µs
HGTG30N60B3D
©2004 Fairchild Semiconductor Corporation HGTG30N60B3D Rev. B2
Handling Precautions for IGBTs
Insulated Gate Bip olar Transistors are su sceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling thes e devic es,
care should be exercised to assure that the static cha rge built
in the handler’s body capacitance is no t discharged through
the device. With proper ha ndling and ap plication procedures,
however, IGBTs are currently being exte nsivel y used in
production by numerous e quipmen t manufacturers in milita ry,
industrial and consumer applica tions, with virtually no damage
problems due to electrost atic discharge. IGBTs can be
handled safely if the follow ing bas ic precauti ons are t aken :
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting springs
or by the insertion into conductive material such as
“ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers, the
hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage rating
of VGEM. Exceeding the rated VGE can result in permanent
damage to the oxide layer in the gate region.
6. Gat e T er minat ion - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to voltage
buildup on the input capacitor due to leakage currents or
pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) i s presented a s a guide for es timating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the info rmation s hown fo r a typical unit in F igures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whi chever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Dead time (the de nominator ) has been arbitrarily held to 10 %
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 20.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripp le under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approximated by PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 20. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
Test Circuit and Waveforms
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. SWITCHING TEST WAVEFORMS
RG = 3Ω
L = 1mH
VDD = 480V
+
-
HGTG30N60B3D
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON
HGTG30N60B3D
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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