1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2109
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
1.5 ± 0.1
0.41
+0.03
–0.05
0.8 MIN.
0.42
±0.06 1.53.0
0.47
±0.06
0.42
±0.06
2.5 ± 0.1
4.0 ± 0.25
4.5 ± 0.1
1.6 ± 0.2
SDG
EQUIVALENT CIRCUIT
Source (S)
Internal diode
Gate protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NS
The 2SK2109 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuator, such as motors
and DC/DC converters.
FEATURES
• Low ON resistance
RDS(on) = 1.0 Ω MAX. @VGS = 4.0 V, ID = 0.3 A
• High switching speed
ton + toff < 100 ns
• Low parasitic capacitance
Document No. D11229EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 60 V
Gate to Source Voltage VGSS VDS = 0 ±20 V
Drain Current (DC) ID(DC) ±0.5 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms, ±1.0 A
Duty cycle ≤ 50 %
Total Power Dissipation PT16 cm2 × 0.7 mm, ceramic substrate used 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
2SK2109
2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = 60 V, VGS = 0 1.0
µ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 ±10
µ
A
Gate Cut-Off Voltage VGS(off) VDS = 10 V, ID = 1 mA 0.8 1.5 2.0 V
Forward Transfer Admittance |yfs|VDS = 10 V, ID = 0.3 A 0.4 S
Drain to Source On-State Resistance
RDS(on)1 VGS = 4.0 V, ID =0.3 A 0.55 1.0 Ω
Drain to Source On-State Resistance
RDS(on)2 VGS = 10 V, ID = 0.3 A 0.41 0.8 Ω
Input Capacitance Ciss VDS = 10 V, VGS = 0, 111 pF
Output Capacitance Coss f = 1.0 MHz 55 pF
Reverse Transfer Capacitance Crss 19 pF
Turn-On Delay Time td(on) VDD = 25 V, ID = 0.3 A 2.2 ns
Rise Time trVGS(on) = 10 V, RG = 10 Ω1.5 ns
Turn-Off Delay Time td(off) RL = 83 Ω35 ns
Fall Time tf19 ns
2SK2109
3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
T
- Derating Factor - %
30
100
T
A
- Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drain Current - A
0
10
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
- Drain Current - A
0
1.0
V
DS
- Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
I
D
- Drain Current - A
0.5
1
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|
y
fs
| - Forward Transfer Admittance - S
0.001
10
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
DS(ON)
- Drain to Source On-State Resistance - Ω
0.01
1
I
D
- Drain Current - A
80
60
40
20
060 90 120 150
5
2
1
0.5
0.2
0.1 2 5 10 20 50 100
Single pulse
1 ms
DC
PW = 100 ms
10 ms
0.8
0.6
0.4
0.2
0.4 0.8 1.2 1.6 2.0
10 V
10 V 3.0 V
4.5 V
4.0 V
3.5 V 2.5 V
V
GS
= 2.0 V
0.1
0.01
0.001
0.0001 1 1.5 2 2.5 3
V
DS
= 10 V
1
0.1
0.01 0.01 0.1 1
0.5
00.1 1 10
V
GS
= 4 V
T
A
= 75 ˚C
25 ˚C
–25 ˚C
25 ˚C
75 ˚C
T
A
= –25 ˚C
V
DS
= 10 V
T
A
= 75 ˚C
25 ˚C
–25 ˚C
2SK2109
4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
DS(on)
- Drain to Source On-State Resistance - Ω
1
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
DS(on)
- Drain to Source On-State Resistance - Ω
1.5
V
GS
- Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
0.1
500
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
0.5
50
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
SD
- Diode Forward Current - A
0.2
1
V
SD
- Source to Drain Voltage - V
0.5
05
200
100
50
20
0.2 2 5 20 100
20
10
5
10.1 0.2 1 5
0.1
0.001
0.0001 0.4 0.7
0.01
0.3 0.5 0.6 0.8 0.9 1
V
GS
= 0
f = 1 MHz
C
rss
10
50.5 1 10 50
C
oss
C
iss
0.01 0.1 1 10
T
A
= 75 ˚C
25 ˚C
–25 ˚C
1
0.5
0101520
V
GS
= 10 V I
D
= 0.3 A
2
0.5 2
t
d(off)
t
f
t
r
t
d(on)
V
DD
= 25 V
V
GS(on)
= 10 V
2SK2109
5
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E
2SK2109
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“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
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device before using it in a particular application.
Standard:Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
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The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
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Anti-radioactive design is not implemented in this product.
M4 94.11
[MEMO]
