MJF122 - Micro Commercial Components

Motorola Bipolar Power Transistor Device Data

 



For Isolated Package Applications

Designed for general–purpose amplifiers and switching applications, where the

mounting surface of the device is required to be electrically isolated from the heatsink

or chassis.

•Electrically Similar to the Popular TIP122 and TIP127

•100 VCEO(sus)

•5 A Rated Collector Current

•No Isolating Washers Required

•Reduced System Cost

•High DC Current Gain — 2000 (Min) @ IC = 3 Adc

•UL Recognized, File #E69369, to 3500 VRMS Isolation

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

RMS Isolation Voltage (1) Test No. 1 Per Fig. 14

(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 15

TA = 25

C) Test No. 3 Per Fig. 16

ÎÎÎÎÎ

VISOL

ÎÎÎÎÎÎ

4500

3500

1500

ÎÎÎ

VRMS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎ

0.12

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation* @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎ

0.24

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎ

0.016

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case*

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

4.1

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Lead Temperature for Soldering Purpose

ÎÎÎÎÎ

ÎÎÎÎÎÎ

260

ÎÎÎ

*Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on

a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.

(1) Proper strike and creepage distance must be provided.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MF122/D

 Motorola, Inc. 1995





COMPLEMENTARY

SILICON

POWER DARLINGTONS

5 AMPERES

100 VOLTS

30 WATTS





CASE 221D–02

TO–220 TYPE

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc)

DC Current Gain (IC = 3 Adc, VCE = 3 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

1000

2000

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (IC = 3 Adc, IB = 12 mAdc)

Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 20 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

3.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (IC = 3 Adc, VCE = 3 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance MJF127

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJF122

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

300

200

ÎÎÎ

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

Figure 1. Switching Times Test Circuit

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25

0.1 0.7 100.5

0.3 2 5

IC, COLLECTOR CURRENT (AMP)

td @ VBE(off) = 0 V

t, TIME ( s)

0.5

0.2

0.1

0.05

Figure 2. Typical Switching Times

0.3

0.2 1

0.07

0.7

3 7

PNP

NPN

≈

120

≈

8 k

APPROX.

+8 V

APPROX.

–12 V 25

51 D1

+4 V

VCC

–30 V

RCSCOPE

TUT

tr, tf

≤

10 ns

DUTY CYCLE = 1% FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPES, e.g.,

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

 

Motorola Bipolar Power Transistor Device Data

PD, POWER DISSIPATION (WATTS)

TATC

Figure 3. Maximum Power Derating

T, TEMPERATURE (

40 60 100 120 16080 140

t, TIME (ms)

0.010.1 0.5 10 20 50 100 200 500 5K 10K1 52

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

SINGLE PULSE

JC(t) = r(t) R

TJ(pk) – TC = P(pk) R

JC(t)

RESISTANCE (NORMALIZED)

Figure 4. Thermal Response

0.5

0.3

0.03

0.02

0.2 1K 2K30 3003

0.3 3K

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Maximum Forward Bias

Safe Operating Area

CURRENT LIMIT

SECONDARY BREAKDOWN

LIMIT

THERMAL LIMIT @

TC = 25

C (SINGLE PULSE)

IC, COLLECTOR CURRENT (AMPS)

0.1 2 3 50

0.3

0.2

TJ = 150

C1 ms

5 ms

100

0.5

5 10020

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Secondary breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150

C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by secondary breakdown.

 

4 Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 6. Typical Small–Signal Current Gain

f, FREQUENCY (kHz)

300

hfe, SMALL–SIGNAL CURRENT GAIN

200

100

TC = 25

VCE = 4 Vdc

IC = 3 Adc

Figure 7. Typical Capacitance

10,000

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

Cib

Cob

0.1

200

100

1000

500

300

100510.5

2000

3000

5000

10 500.2 2 20

TJ = 25

IC, COLLECTOR CURRENT (AMP)

NPN

MJF122 PNP

MJF127

Figure 8. Typical DC Current Gain

0.1 IC, COLLECTOR CURRENT (AMP)

200 0.2 0.5

3000

1000

10,000

hFE, DC CURRENT GAIN

VCE = 4 V

TJ = 150

5000

0.3 1

–55

2000

0.7 3

20,000

300

500

5 10

hFE, DC CURRENT GAIN

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.3 0.5 0.7 102 5

IC = 2 A 4 A

6 A

TJ = 25

120 30

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

Figure 9. Typical Collector Saturation Region

PNP

NPN PNP

NPN

1 100050105 100 5002 20 200

200

3000

1000

10,000

5000

2000

20,000

300

500

2 7 0.1 0.2 0.50.3 10.7 3 5 102 7

VCE = 4 V

TJ = 150

–55

IC = 2 A 4 A 6 A

700

7000

3 7 0.3 0.5 0.7 102 51 20 303 7

TJ = 25

 

Motorola Bipolar Power Transistor Device Data

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

0.1

NPN

MJF122 PNP

MJF127

10–1 0+0.4 –0.2 –0.4 –0.6+0.6 +0.2 –0.8 –1 –1.2 –1.4

IC, COLLECTOR CURRENT (AMP)

*IC/IB

≤

hFE 3

– 5

104

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10–1 0– 0.4

, COLLECTOR CURRENT ( A)

103

102

101

100

+0.2 +0.4 +0.6

TJ = 150

100

REVERSE FORWARD

VCE = 30 V

105

–0.6 –0.2 +0.8 +1 +1.2 +1.4

104

VBE, BASE–EMITTER VOLTAGE (VOLTS)

, COLLECTOR CURRENT ( A)

103

102

101

100

TJ = 150

100

REVERSE FORWARD

VCE = 30 V

105

– 4

– 3

– 2

– 1

VB FOR VBE

C to 150

VC FOR VCE(sat)

IC, COLLECTOR CURRENT (AMP)

Figure 10. Typical “On” Voltages

Figure 11. Typical Temperature Coefficients

0.1 IC, COLLECTOR CURRENT (AMP)

1.5

V, VOLTAGE (VOLTS)

2.5

0.5 0.2 0.5 50.3 10.7 3 10 IC, COLLECTOR CURRENT (AMP)

1.5

V, VOLTAGE (VOLTS)

2.5

0.5

TJ = 25

VBE(sat) @ IC/IB = 250

VBE @ VCE = 4 V

TJ = 25

VBE(sat) @ IC/IB = 250

VBE @ VCE = 4 V

VCE(sat) @ IC/IB = 250

V, TEMPERATURE COEFFICIENT (mV C)

°θ

72 0.1 0.2 0.5 50.3 10.7 3 1072

0.2 0.5 50.3 10.7 3 1072 0.1 0.2 0.5 50.3 1 3 1072

+ 1

+ 2

+ 3

+ 4

+ 5

– 5

– 4

– 3

– 2

– 1

+ 1

+ 2

+ 3

+ 4

+ 5

– 55

C to 25

*IC/IB

≤

hFE 3

VB FOR VBE

VC FOR VCE(sat)

Figure 12. Typical Collector Cut–Off Region

VCE(sat) @ IC/IB = 250

C to 150

C– 55

C to 25

C to 150

– 55

C to 25

C to 150

– 55

C to 25

 

6 Motorola Bipolar Power Transistor Device Data

BASE

EMITTER

COLLECTOR

≈

8 k

≈

120

BASE

EMITTER

COLLECTOR

≈

8 k

≈

120

NPN

MJF122 PNP

MJF127

Figure 13. Darlington Schematic

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.110” MIN

Figure 14. Clip Mounting Position

for Isolation Test Number 1

*Measurement made between leads and heatsink with all leads shorted together

CLIP CLIP 0.107” MIN LEADS

HEATSINK

0.107” MIN

Figure 15. Clip Mounting Position

for Isolation Test Number 2 Figure 16. Screw Mounting Position

for Isolation Test Number 3

MOUNTED

FULLY ISOLATED

PACKAGE

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

TEST CONDITIONS FOR ISOLATION TESTS*

4–40 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw

torque of 6 to 8 in .lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a con-

stant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in .lbs will

cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in .lbs without adversely affecting the pack-

age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10

in .lbs of mounting torque under any mounting conditions.

Figure 17. Typical Mounting Techniques*

MOUNTING INFORMATION

**For more information about mounting power semiconductors see Application Note AN1040.

 

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221D–02

TO–220 TYPE

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

DIM

AMIN MAX MIN MAX

MILLIMETERS

0.621 0.629 15.78 15.97

INCHES

B0.394 0.402 10.01 10.21

C0.181 0.189 4.60 4.80

D0.026 0.034 0.67 0.86

F0.121 0.129 3.08 3.27

G0.100 BSC 2.54 BSC

H0.123 0.129 3.13 3.27

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.14 1.52

N0.200 BSC 5.08 BSC

Q0.126 0.134 3.21 3.40

R0.107 0.111 2.72 2.81

S0.096 0.104 2.44 2.64

U0.259 0.267 6.58 6.78

–B–

–Y–

3 PL

1 2 3

0.25 (0.010) Y

SEATING

PLANE

–T–

 

8 Motorola Bipolar Power Transistor Device Data

How to reach us:

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and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

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MJF122/D

*MJF122/D*

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