QFET (R) FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Features Description * 10.5 A, 400V, RDS(on) = 0.5 : @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. * Low gate charge ( typical 28 nC) * Low Crss ( typical 85pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. * Fast switching * 100% avalanche tested * Improved dv/dt capability D { G D G{ S TO-220 TO-220F GD S FQP Series FQPF Series { S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current FQP11N40C FQPF11N40C 400 Units V - Continuous (TC = 25C) 10.5 10.5 * A - Continuous (TC = 100C) 6.6 6.6 * A 42 * A IDM Drain Current VGSS Gate-Source Voltage - Pulsed 42 (Note 1) r 30 V 360 mJ EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy (Note 1) 13.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8I from case for 5 seconds 4.5 135 - Derate above 25C 1.07 V/ns 44 W 0.35 W/C -55 to +150 C 300 C * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RTJC Thermal Resistance, Junction-to-Case RTCS Thermal Resistance, Case-to-Sink Typ. RTJA Thermal Resistance, Junction-to-Ambient (c)2010 Fairchild Semiconductor Corporation FQP11N40C FQPF11N40C Units 0.93 2.86 C/W 0.5 -- C/W 62.5 62.5 C/W 1 FQP11N40C/FQPF11N40C Rev. C1 http://store.iiic.cc/ www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET August 2010 Device Marking Device Package Reel Size Tape Width Quantity FQP11N40C FQP11N40C TO-220 -- -- 50 FQPF11N40C FQPF11N40C TO-220F -- -- 50 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 PA 400 -- -- V 'BVDSS/ 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, Referenced to 25C -- 0.54 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- 1 PA VDS = 320 V, TC = 125C -- -- 10 PA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 PA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.25 A -- 0.43 0.53 : gFS Forward Transconductance VDS = 40 V, ID = 5.25 A -- 7.1 -- S -- 840 1090 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 250 325 pF -- 85 110 pF -- 14 40 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 200 V, ID = 10.5 A, RG = 25 : (Note 4, 5) VDS = 320 V, ID = 10.5 A, VGS = 10 V (Note 4, 5) -- 89 190 ns -- 81 170 ns -- 81 170 ns -- 28 35 nC -- 4 -- nC -- 15 -- nC 10.5 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 42 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10.5 A -- -- 1.4 V trr Reverse Recovery Time -- 290 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 10.5 A, dIF / dt = 100 A/Ps -- 2.4 -- PC (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 5.7 mH, IAS = 10.5A, VDD = 50V, RG = 25 :Starting TJ = 25C 3. ISD d 10.5A, di/dt d 200A/Ps, VDD d BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width d 300Ps, Duty cycle d 2% 5. Essentially independent of operating temperature FQP11N40C/FQPF11N40C Rev. C1 2 http://store.iiic.cc/ www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : ID, Drain Current [A] 1 10 150qC ID, Drain Current [A] 1 10 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 -55qC 25qC 0 10 Notes : 1. 250Ps Pulse Test 2. TC = 25qC Notes : 1. VDS = 40V 2. 250Ps Pulse Test -1 -1 10 10 0 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [:], Drain-Source On-Resistance 2.0 VGS = 10V 1.5 1.0 VGS = 20V 0.5 Note : TJ = 25qC 1 10 0 10 150qC Notes : 1. VGS = 0V 25qC 2. 250Ps Pulse Test -1 0 5 10 15 20 25 30 35 10 40 0.2 0.4 ID, Drain Current [A] 1.2 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1400 Ciss 1200 Coss 1000 800 600 VDS = 100V 10 VGS, Gate-Source Voltage [V] 1600 Capacitance [pF] 1.0 Figure 6. Gate Charge Characteristics 2000 Notes ; 1. VGS = 0 V Crss 2. f = 1 MHz 400 200 0 -1 10 0.8 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 1800 0.6 VDS = 250V 8 VDS = 400V 6 4 2 Note : ID = 10.5A 0 0 10 0 1 10 10 15 20 25 30 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FQP11N40C/FQPF11N40C Rev. C1 5 3 http://store.iiic.cc/ www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 0.9 2. ID = 250PA 0.8 -100 -50 0 50 100 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 5.25 A 150 0.0 -100 200 Figure 9-1. Maximum Safe Operating Area of FQP4N50C 0 50 100 10 Ps ID, Drain Current [A] ID, Drain Current [A] 10 Ps 100 Ps 1 ms 1 200 Operation in This Area is Limited by R DS(on) 2 10 10 150 Figure 9-2. Maximum Safe Operating Area of FQPF4N50C Operation in This Area is Limited by R DS(on) 2 10 -50 TJ, Junction Temperature [qC] TJ, Junction Temperature [qC] 10 ms 100 ms DC 0 10 Notes : 1. TC = 25qC 100 Ps 1 1 ms 10 10 ms 100 ms DC 0 10 Notes : 1. TC = 25qC 2. TJ = 150qC 2. TJ = 15qC 3. Single Pulse 3. Single Pulse -1 -1 10 0 1 10 2 10 10 3 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current 12 ID, Drain Current [A] 10 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [qC] FQP11N40C/FQPF11N40C Rev. C1 4 http://store.iiic.cc/ www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Typical Performance Characteristics (Continued) FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. ransient Thermal Response Curve of FQP3N50C 10 0 0 .2 10 N o te s : 1 . Z T J C ( t) = 0 . 9 3 q C / W M a x . 0 .1 -1 2 . D u ty F a c to r , D = t1/t2 0 .0 5 3 . T JM - T C = P D M * Z TJC (t) 0 .0 2 0 .0 1 TJC (t), Thermal Response D = 0 .5 PDM Z s in g le p u ls e 10 t1 -2 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. ransient Thermal Response Curve of FQPF3N50C Z JC(t), Thermal Response D = 0 .5 10 0 0 .2 N o te s : 1 . Z J C( t ) = 2 . 8 6 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t ) 0 .1 0 .0 5 10 -1 0 .0 2 0 .0 1 PDM t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] FQP11N40C/FQPF11N40C Rev. C1 5 http://store.iiic.cc/ www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp FQP11N40C/FQPF11N40C Rev. C1 VDS (t) VDD DUT 10V ID (t) tp 6 http://store.iiic.cc/ Time www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FQP11N40C/FQPF11N40C Rev. C1 7 http://store.iiic.cc/ www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters FQP11N40C/FQPF11N40C Rev. C1 8 http://store.iiic.cc/ www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F Dimensions in Millimeters FQP11N40C/FQPF11N40C Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FQP11N40C/FQPF11N40C Rev. C1 10 http://store.iiic.cc/ www.fairchildsemi.com FQP11N40C/FQPF11N40C 400V N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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