FQP11N40C - Fairchild - Datasheet.Wiki

FQP11N40C/FQPF11N40C Rev. C1

FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

August 2010

QFET

FQP11N40C/FQPF11N40C

400V N-Channel MOSFET

Features

• 10.5 A, 400V, RDS(on) = 0.5 : @VGS = 10 V

• Low gate charge ( typical 28 nC)

• Low Crss ( typical 85pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

ciency switched mode power supplies, active power factor cor-

rection, electronic lamp ballasts based on half bridge topology.

GDS

TO-220

FQP Series

TO-220F

FQPF Series

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Absolute Maximum Ratings

Symbol Parameter FQP11N40C FQPF11N40C Units

VDSS Drain-Source Voltage 400 V

IDDrain Current - Continuous (TC = 25°C) 10.5 10.5 * A

- Continuous (TC = 100°C) 6.6 6.6 * A

IDM Drain Current - Pulsed (Note 1) 42 42 * A

VGSS Gate-Source Voltage r 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 360 mJ

IAR Avalanche Current (Note 1) 11 A

EAR Repetitive Avalanche Energy (Note 1) 13.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PDPower Dissipation (TC = 25°C) 135 44 W

- Derate above 25°C 1.07 0.35 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8I from case for 5 seconds

300 °C

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol Parameter FQP11N40C FQPF11N40C Units

RTJC Thermal Resistance, Junction-to-Case 0.93 2.86 °C/W

RTCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W

RTJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

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FQP11N40C/FQPF11N40C Rev. C1

FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FQP11N40C FQP11N40C TO-220 -- -- 50

FQPF11N40C FQPF11N40C TO-220F -- -- 50

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units



Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 PA 400 -- -- V

'BVDSS/

'TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 PA, Referenced to 25°C -- 0.54 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- 1 PA

VDS = 320 V, TC = 125°C -- -- 10 PA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA



On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 PA 2.0 -- 4.0 V

RDS(on) Static Drain-Source

On-Resistance

VGS = 10 V, ID = 5.25 A -- 0.43 0.53 :

gFS Forward Transconductance VDS = 40 V, ID = 5.25 A (Note 4) -- 7.1 -- S



Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 840 1090 pF

Coss Output Capacitance -- 250 325 pF

Crss Reverse Transfer Capacitance -- 85 110 pF



Switching Characteristics

td(on) Turn-On Delay Time VDD = 200 V, ID = 10.5 A,

RG = 25 :

(Note 4, 5)

-- 14 40 ns

trTurn-On Rise Time -- 89 190 ns

td(off) Turn-Off Delay Time -- 81 170 ns

tfTurn-Off Fall Time -- 81 170 ns

QgTotal Gate Charge VDS = 320 V, ID = 10.5 A,

VGS = 10 V

(Note 4, 5)

-- 28 35 nC

Qgs Gate-Source Charge -- 4 -- nC

Qgd Gate-Drain Charge -- 15 -- nC



Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 10.5 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 42 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10.5 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 10.5 A,

dIF / dt = 100 A/Ps (Note 4)

-- 290 -- ns

Qrr Reverse Recovery Charge -- 2.4 -- PC

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 5.7 mH, IAS = 10.5A, VDD = 50V, RG = 25 :Starting TJ = 25°C

3. ISD d 10.5A, di/dt d 200A/Ps, VDD d BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width d 300Ps, Duty cycle d 2%

5. Essentially independent of operating temperature

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FQP11N40C/FQPF11N40C Rev. C1

FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

100101

10-1

100

101

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

Notes :

1. 250Ps Pulse Test

2. TC = 25qC

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

246810

10-1

100

101

150qC

25qC

-55qC

Notes :

1. VDS = 40V

2. 250Ps Pulse Test

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0 5 10 15 20 25 30 35 40

0.5

1.0

1.5

2.0

VGS = 20V

VGS = 10V

Note : TJ = 25qC

RDS(ON) [:],

Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10-1

100

101

150qC

Notes :

1. VGS = 0V

2. 250Ps Pulse Test

25qC

IDR, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 100101

200

400

600

800

1000

1200

1400

1600

1800

2000

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

Notes ;

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0 5 10 15 20 25 30

VDS = 250V

VDS = 100V

VDS = 400V

Note : ID = 10.5A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

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FQP11N40C/FQPF11N40C Rev. C1

FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

Notes :

1. VGS = 0 V

2. ID

= 250PA

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [qC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :

1. VGS = 10 V

2. ID = 5.25 A

RDS(ON), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [qC]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area

of FQP4N50C of FQPF4N50C

100101102103

10-1

100

101

102

100 ms

10 Ps

10 ms

1 ms

100 Ps

Operation in This Area

is Limited by R DS(on)

Notes :

1. TC = 25qC

2. TJ = 150qC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

100101102103

10-1

100

101

102

100 ms

10 Ps

10 ms

1 ms

100 Ps

Operation in This Area

is Limited by R DS(o n)

Notes :

1. TC = 25qC

2. TJ = 15qC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Figure 10. Maximum Drain Current

25 50 75 100 125 150

ID, Drain Current [A]

TC, Case Temperature [qC]

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FQP11N40C/FQPF11N40C Rev. C1

FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Typical Performance Characteristics (Continued)

Figure 11-1. ransient Thermal Response Curve of FQP3N50C

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

Notes :

1. Z TJC(t) = 0.93qC/W Max.

2. D u ty F ac to r, D =t1/t2

3. T JM - T C = PDM * ZTJC (t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZTJC(t), Thermal Response

t1, S q u are W ave P u ls e D ura tio n [se c]

PDM

Figure 11-2. ransient Thermal Response Curve of FQPF3N50C

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

Notes :ĝ

1. Z ɰJC

(t) = 2.86  /W M ax.

2. D u ty F acto r, D = t1/t2

3. T JM - TC = PDM * ZɰJC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZɰJC

(t), Thermal Response

t1, Square W ave Pulse Duration [sec]

PDM

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

Charge

VGS

10V

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50Kൎ

200nF

12V

Same Type

as DUT

Charge

VGS

10V

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50Kൎ

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

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FQP11N40C/FQPF11N40C Rev. C1

FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

D = Gate Pulse Width

Gate Pulse Period

--------------------------

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FQP11N40C/FQPF11N40C Rev. C1

FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

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FQP11N40C/FQPF11N40C Rev. C1

FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Mechanical Dimensions

TO-220

Dimensions in Millimeters

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FQP11N40C/FQPF11N40C Rev. C1

FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

Mechanical Dimensions (Continued)

TO-220F

Dimensions in Millimeters

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FQP11N40C/FQPF11N40C Rev. C1

FQP11N40C/FQPF11N40C 400V N-Channel MOSFET

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Definition of Terms

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Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

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Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

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make changes at any time without notice to improve the design.

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Rev. I48

™

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