BFS17N
Document Number DS32160 Rev. 3 - 2 1 of 7
www.diodes.com October 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
BFS17N
NEW PRODUCT
NPN RF TRANSISTOR IN SOT23
Features
• 3.2GHz unity gain for RF switching applications
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP capable (Note 4)
Applications
• RF switch
Mechanical Data
• Case: SOT23
• Case material: molded plastic. “Green” molding compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
BFS17NTA AEC-Q101 E1N 7 8 3,000
BFS17NQTA Automotive E1N 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorpor ated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com.
Marking Information
E1N = Product type Marking Code
Device symbol Top View
Pin Out
E1N
e3
C
E
B
SOT23
Top View
C
E
B
BFS17N
Document Number DS32160 Rev. 3 - 2 2 of 7
www.diodes.com October 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
BFS17N
NEW PRODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VCEO 11 V
Emitter-Base Voltage VEBO 3 V
Continuous Collector Current IC 50 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD 310 mW
(Note 7) 350
Thermal Resistance, Junction to Ambient (Note 6) RθJA 403 °C/W
(Note 7) 357
Thermal Resistance, Junction to Leads (Note 8) RθJL 350 °C/W
Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C
ESD Ratings (Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 2,000 V 2
Electrostatic Discharge - Machine Model ESD MM 100 V A
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition ;
7. Same as Note 6, ex pect the device is mounted on 15mm X 15mm X 1.6m m FR 4 PCB
8. Thermal resistance from junction to solder-point (at the end of the lead s).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BFS17N
Document Number DS32160 Rev. 3 - 2 3 of 7
www.diodes.com October 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
BFS17N
NEW PRODUCT
Thermal Characteristics and Derating information
0 255075100125150
0.0
0.1
0.2
0.3
0.4
D e ra ting Curve
Temperature (°C)
Max Power Di ssi pa tion (W )
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Imped an ce
D=0.5
D=0.2 D=0.1 Single Pulse
D=0.05
Thermal Resistance (° C/W)
Pul se Width (s )
10m 100m 1 10 100 1k
0.1
1
10 Single Pulse. Tamb=25°C
Pulse Power Dissipation
Pulse Width (s )
Max Power Dissipati on (W)
BFS17N
Document Number DS32160 Rev. 3 - 2 4 of 7
www.diodes.com October 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
BFS17N
NEW PRODUCT
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 20 − − V IC = 10µA
Collector-Emitter Breakdown Voltage (Note 10) BVCEO 11 − − V IC = 1mA
Emitter-Base Breakdown Voltage BVEBO 3 − − V IE = 10µA
Collector Cutoff Current ICBO − − 0.5 µA
VCB = 10V
Emitter Cutoff Current IEBO − − 0.5 µA
VEB = 2V
Static Forward Current Transfer Ratio (Note 10) hFE 56 − 180 − IC = 5mA, VCE = 10V
Collector-Emitter Saturation Voltage (Note 10) VCE
(
sat
)
− − 0.5 V
IC = 25mA, IB = 5mA
Transition Frequency (Note 10) fT 1.4 3.2 − GHz IE = 25mA, VCE = 5V,
f = 500MHz
Collector Output Capacitance (Note 10) Cob − 0.8 1.5 pF
VCB = 10V, f = 1MHz
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
BFS17N
Document Number DS32160 Rev. 3 - 2 5 of 7
www.diodes.com October 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
BFS17N
NEW PRODUCT
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0.1 1 10 100
400
500
600
700
800
900
1000
1100
0.0 5.0 10.0 15.0 20.0 25.0 30.0
0
1
2
3
4
0 5 10 15 20
0.6
0.8
1.0
1.2
1.4
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
012345678910
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.1 1 10 100
0
50
100
150
200
T=-55°C
T=25°C
T=85°C
T=150°C VCE=5V
VBE(ON) (V)
IC Collector Current (mA)
VCE=10V
VCE=5V
VCE=2V
Tamb=25°C
f=500MHz
fT (GHz)
IC Collector Current (mA)
VCE=1V
Ta=25°C
f=1MHz
CCB Capacitance (pF )
VCB Collector-Base Voltage (V)
Ta=25°C
f=1MHz
CEB Capacitance (pF)
VEB Emi tter- Ba se Voltage (V)
Ten base steps
100μA per step
IC Coll ect or Current (A )
VCE (V)
T=-55°C
T=25°C
T=85°C
T=150°C
VCE=5V
hFE Gain
I C Co l l ecto r Current (mA)
BFS17N
Document Number DS32160 Rev. 3 - 2 6 of 7
www.diodes.com October 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
BFS17N
NEW PRODUCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
BFS17N
Document Number DS32160 Rev. 3 - 2 7 of 7
www.diodes.com October 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
BFS17N
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Cus tomer or user of this document or prod ucts described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
