1N4001GP thru 1N4007GP Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifier DO-204AL (DO-41) 1.0 (25.4) MIN. Reverse Voltage 50 to 1000V Forward Current 1.0A * d e t n Features e t a P * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * High temperature metallurgically bonded construction * Cavity-free glass passivated junction * Capable of meeting environmental standards of MIL-S-19500 * 1.0 Ampere operation at TA = 75C with no thermal runaway * Typical IR less than 0.1A * High temperature soldering guaranteed: 350C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) (R) 1.0 (25.4) MIN. Mechanical Data 0.034 (0.86) 0.028 (0.71) DIA. NOTE: Lead diameter is 0.026 (0.66) 0.023 (0.58) Case: JEDEC DO-204AL, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 oz., 0.3 g for suffix "E" part numbers Dimensions in inches and (millimeters) *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter 1N 1N 1N 1N 1N 1N 1N Symbol 4001GP 4002GP 4003GP 4004GP 4005GP 4006GP 4007GP Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V * Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V * Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V * Maximum average forward rectified current 0.375" (9.5mm) lead length at TA = 75C IF(AV) 1.0 A * Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 30 A * Maximum full load reverse current, full cycle average 0.375" (9.5mm) lead length TA = 75C IR(AV) 30 A Typical thermal resistance RJA RJL 55 25 C/W TJ, TSTG -65 to +175 C (Note 1) * Operating junction and storage temperature range Electrical Characteristics Unit Ratings at 25C ambient temperature unless otherwise specified. Maximum instantaneous forward voltage at 1.0A VF 1.1 V IR 5.0 50 A Typical reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A trr 2.0 s Typical junction capacitance at 4.0V, 1MHz CJ 8.0 pF * Maximum DC reverse current at rated DC blocking voltage TA = 25C TA = 125C Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted Document Number 88504 08-Jul-03 *JEDEC registered values www.vishay.com 1 1N4001GP thru 1N4007GP Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 1 - Forward Current Derating Curve 30 60HZ Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.0 0.8 0.6 0.4 0.2 0.375" (9.5mm) Lead Length 0 TJ = TJmax 8.3ms Single Half Sine-Wave (JEDEC Method) 25 20 15 10 5.0 0 25 50 75 100 125 150 1 175 10 Ambient Temperature (C) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics 10 10 Instantaneous Reverse Current (A) Instantaneous Forward Current (A) 20 TJ = 25C Pulse Width = 300s 1% Duty Cycle 1 0.1 0.01 0.6 TJ = 100C 1 0.1 TJ = 25C 0.01 0.8 1.0 1.2 1.4 1.6 0 60 80 100 100 20 Transient Thermal Impedance (C/W) TJ = 25C f = 1.0MHZ Vsig = 50mVp-p 10 1 10 Reverse Voltage (V) www.vishay.com 2 40 Fig. 6 - Typical Transient Thermal Impedance Fig. 5 - Typical Junction Capacitance 1 0.1 20 Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage (V) Junction Capacitance (pF) 100 Number of Cycles at 60HZ 100 10 1 0.1 0.01 0.1 1 10 100 t -- Pulse Duration (sec) Document Number 88504 08-Jul-03