5Electrical characteristics
CIN= 10 µF, COUT= 10 µF, L=2.2 µH, VIN=3.6 V, VEN= VIN, VOUT=1.8 V, TA=25 °C unless otherwise specified.
Table 6. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
General section
IQ Quiescent current EN=VIN, IOUT=0 µA, VOUT=1.8 V, device does not
switch, VIN=2.5 V to 5.5 V 500 1000 nA
ISD Shutdown current EN=GND, shutdown current into VIN 10 200 nA
VUVLO Undervoltage lockout threshold
VIN rising 1.63 1.72 V
VIN falling 1.51 1.57 V
Hysteresis 65 mV
Vth100%+ 100% mode leave threshold VIN rising, 100% mode is disabled with VIN =
VOUTnom + Vth100%+
300
mV
Vth100%- 100% mode enter threshold VIN falling, 100% mode is entered with VIN = VOUTnom
+ Vth100%-
200
Output voltage
VOUT
Output voltage range Output voltages are selected with pins D0, D1 1.8 3.3 V
Output voltage accuracy VIN = 3.6 V, whole VOUT range, IOUT=100 mA -1.5 1.5 %
tONmin Minimum on-time VIN = 3.6 V, VOUT= 2 V, IOUT= 0 mA 200 ns
tOFFmin Minimum off-time VIN=2.3V 50 ns
tstartupd Start-up delay time VEN from low to high, VIN = 3.6 V, VOUT = 1.8 V 0.5 4 ms
ROUTDIS Output discharge MOSFET on-
resistance VEN= GND 30 Ω
Logic inputs (EN, D0, D1)
VIL Low level input voltage threshold
VIN=1.8 V to 5.5 V
0.3
V
VIH High level input voltage threshold 1
Power switch
RDS(on)
High-side MOSFET on-resistance VIN = 3.6 V, Isw = 400 mA 0.38 0.45
Ω
Low-side MOSFET on-resistance 0.14 0.2
ILIM1
High-side MOSFET switch
current limit 1.8 V ≤ VIN ≤ 5.5 V
580 700 820
mA
Low-side MOSFET switch current
limit 500
ILIMSS High-side MOSFET switch
current limit during soft-start
Reduced switch current limit during soft-start period
(typ. 400 µs) 200 280 360
Power Good output (PGOOD)
Vthpg-
Power Good threshold voltage
Rising output voltage on VOUT pin, referred to VOUT
selected (D0, D1) 95 97.5
%
VthpgH Hysteresis. To see plot for temperature variation -6 -4.25 -2.5
VOL Low level output voltage 1.8 V ≤ VIN ≤ 5.5 V, EN = GND, current into PGOOD
pin, IPGOOD = 4 mA 0.23 V
ST1PS01
Electrical characteristics
DS12799 - Rev 2 page 6/20