FEATURES
MECHAN IC AL DATA
Case: TO -92 Plasti c Package
Weight: approx. 0.18 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Small Signal Transistors (PNP)
B
E
C
.181 (4.6)
min. .492 (12.5) .181 (4.6)
.142 (3.6)
Dimensions in inches and (millimeters)
TO-92
Ratings at 25 °C ambient temperature unless otherwise specified
.098 (2.5)
max. .022 (0.55)
4/98
Symbol Value Unit
Collector-Emitter Voltage BC327
BC328 –VCES
–VCES 50
30 V
V
Collector-Emitter Voltage BC327
BC328 –VCEO
–VCEO 45
25 V
V
Emitter-Base Voltage –VEBO 5V
Collector Current –IC800 mA
Peak Collector Current –ICM 1A
Base Cur rent –IB100 mA
Pow e r Dissipation at Tamb = 25 °C Ptot 6251) mW
Junction Temperature Tj150 °C
Storage Temperature Range TS–65 to +150 °C
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
PNP Silic on Epita xi al Plan ar Transist ors for
switching and amplifier applications. Espe-
cially su it-able for AF-driver stag es and
lo w-pow er out put stages.
These types are also available subdivided
into three groups -16, -25, and -40, acco rdi ng
to their DC current gain. As complementary
types, the NPN transistors BC337 and BC338 are
recommended.
On special request , these tr ansistors are also
manufactured i n the pin configurati on TO-18.
BC32 7, BC3 28
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Min. Typ. Max. Unit
DC Current Gain
at –VCE = 1 V, –IC = 100 mA
Cu rren t Gain Grou p-1 6
-25
-40
at –VCE = 1 V, –IC = 300 mA
Cu rren t Gain Grou p-1 6
-25
-40
hFE
hFE
hFE
hFE
hFE
hFE
100
160
250
60
100
170
160
250
400
130
200
320
250
400
630
Thermal Resi stance J unction to Ambient Air RthJA 2001) K/W
Collector-Emitter Cutoff Current
at –VCE = 45 V BC327
at –VCE = 25 V BC328
at –VCE = 45 V, Tamb = 125 °C BC327
at –VCE = 25 V, Tamb = 125 °C BC328
–ICES
–ICES
–ICES
–ICES
2
2
100
100
10
10
nA
nA
µA
µA
Collect or-Emitter Bre akdown Volt age
at –IC = 10 mA BC327
BC328
V(BR)CEO
V(BR)CEO
45
25
V
V
Collect or-Emitter Bre akdown Volt age
at –IC = 0.1 mA BC327
BC328
V(BR)CES
V(BR)CES
50
30
V
V
Emitter-Base Breakdown Voltage
at –IE = 0.1 mA
V(BR)EBO 5––V
Collect or Saturation Voltage
at –IC = 500 mA, –IB = 50 mA –VCEsat ––0.7V
Base-Emitter Voltage
at –VCE = 1 V, –IC = 300 mA –VBE ––1.2V
Gain-Bandwidth Product
at –VCE = 5 V, –IC = 10 mA, f = 50 MHz fT 100 MHz
Collector-Base Capacitance
at –VCB = 10 V, f = 1 MHz CCBO –12–pF
1) Valid pro vided that leads are kep t at ambient temperature at a distance of 2 mm from case.
BC32 7, BC3 28
RATINGS AND CHARACTERISTIC CURVES BC327, BC328
RATINGS AND CHARACTERISTIC CURVES BC327, BC328
RATINGS AND CHARACTERISTIC CURVES BC327, BC328