BC327, BC328 Small Signal Transistors (PNP) TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit-able for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC337 and BC338 are recommended. max. .022 (0.55) On special request, these transistors are also .098 (2.5) manufactured in the pin configuration TO-18. E C MECHANICAL DATA B Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Value Unit Collector-Emitter Voltage BC327 BC328 -VCES -VCES 50 30 V V Collector-Emitter Voltage BC327 BC328 -VCEO -VCEO 45 25 V V Emitter-Base Voltage -VEBO 5 V Collector Current -IC 800 mA Peak Collector Current -ICM 1 A Base Current -IB 100 mA Power Dissipation at Tamb = 25 C Ptot 6251) mW Junction Temperature Tj 150 C Storage Temperature Range TS -65 to +150 C 1) 4/98 Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. BC327, BC328 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Min. Typ. Max. Unit hFE hFE hFE 100 160 250 160 250 400 250 400 630 - - - hFE hFE hFE 60 100 170 130 200 320 - - - - - - Thermal Resistance Junction to Ambient Air RthJA - - 2001) K/W Collector-Emitter Cutoff Current at -VCE = 45 V at -VCE = 25 V at -VCE = 45 V, Tamb = 125 C at -VCE = 25 V, Tamb = 125 C BC327 BC328 BC327 BC328 -ICES -ICES -ICES -ICES - - - - 2 2 - - 100 100 10 10 nA nA A A BC327 BC328 - V(BR)CEO - V(BR)CEO 45 25 - - - - V V BC327 BC328 - V(BR)CES - V(BR)CES 50 30 - - - - V V Emitter-Base Breakdown Voltage at -IE = 0.1 mA - V(BR)EBO 5 - - V Collector Saturation Voltage at -IC = 500 mA, -IB = 50 mA -VCEsat - - 0.7 V Base-Emitter Voltage at -VCE = 1 V, -IC = 300 mA -VBE - - 1.2 V Gain-Bandwidth Product at -VCE = 5 V, -IC = 10 mA, f = 50 MHz fT - 100 - MHz Collector-Base Capacitance at -VCB = 10 V, f = 1 MHz CCBO - 12 - pF DC Current Gain at -VCE = 1 V, -IC = 100 mA Current Gain Group-16 -25 -40 at -VCE = 1 V, -IC = 300 mA Current Gain Group-16 -25 -40 Collector-Emitter Breakdown Voltage at -IC = 10 mA Collector-Emitter Breakdown Voltage at -IC = 0.1 mA 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. RATINGS AND CHARACTERISTIC CURVES BC327, BC328 RATINGS AND CHARACTERISTIC CURVES BC327, BC328 RATINGS AND CHARACTERISTIC CURVES BC327, BC328