MRF6V14300HSR5 Information Product Summary Page General Information Package Information Environmental and Compliance Information Manufacturing Information Ordering Information Product/Process Change Notice (PCN) Operating Characteristics Reliability Data Lookup General Information Parameter Value Part Number MRF6V14300HSR5 Description Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V Product Line 614300HS PTI RGMA Material Type Tested Packaged Device Life Cycle Description (code) PRODUCT MATURITY/SATURATION Status Active Application/Qualification Tier 10-YEARS APPLICATION LIFE Package Information Parameter Value Package Type and Termination Count Air Cavity 3 Package Description and Mechanical Drawing NI-780S Device Weight(g) 3.27290 Package Length (nominal)(mm) 20.570 Package Width (nominal)(mm) 9.780 Package Thickness (nominal)(mm) 3.760 Tape & Reel Yes Environmental and Compliance Information Parameter Value Pb-Free RoHS Compliant Halogen Free Yes Material Composition Declaration (MCD) Download MCD Report RoHS Certificate of Analysis (CoA) Contact Us 2nd Level Interconnect e4 Peak Package Body Temperature (PPT)(C) 260 Maximum Time at Peak Temperature (s) 40 Number of Reflow Cycles 3 REACH SVHC Freescale REACH Statement Download MCD Report Manufacturing Information Parameter Micron Size(?m) Value 6 Ordering Information Parameter Value Minimum Package Quantity (MPQ) 50 MPQ Container REEL Exempt from Minimum Delivery Value Yes Preferred Order Quantity (POQ) 50 POQ Container BOX Leadtime (weeks) 18 Export Control Classification Number (US) EAR99 Harmonized Tariff (US) Disclaimer 8541.29.0075 CCATS Document - ENC Status - Other Trade Compliance Documents - Budgetary Price excluding tax(US$) Change Currency - Order Product/Process Change Notice (PCN) Number Type Title Issue Date Effectivity Date 13811 Product Change Notice Reduction in Gold Plating Thickness for RF Power Transistor Products 15 Dec 2009 01 Apr 2010 13952 Product Change Notice RF Power Transistor Internal Matching Capacitor Wafer Fab Transfer 15 Dec 2009 15 Mar 2010 13618 Product Change Notice RF High Power LDMOS - Additional Assembly and Test Site 28 May 2009 26 Aug 2009 13328 Product Change Notice Planned LDMOS Fab Transfer 12 Nov 2008 10 Feb 2009 Operating Characteristics Parameter Value Class AB Die Technology LDMOS Efficiency (Typ) (%) 60.5 Freq (Max) (MHz) 1400 Freq (Min) (MHz) 1200 Frequency (Max) (MHz) 1400 Frequency Band (Min-Max) (MHz) 1200 to 1400 Matching I/O Output Power (Typ) (W) @ Intermodulation Level at Test Signal 330 @ Peak P1dB (Typ) (W) 330 Power Gain (Typ) (dB) @ f (MHz) 18 @ 1400 Sample Exception Availability N Supply Voltage (Typ) (V) 50 Test Signal Pulse Thermal Resistance (Spec) (C/W) 0.13 Reliability Data Lookup