MRF6V14300HSR5 Information
Product Summary Page
General Information
Package Information
Environmental and Compliance Information
Manufacturing Information
Ordering Information
Product/Process Change Notice (PCN)
Operating Characteristics
Reliability Data Lookup
General Information
Parameter Value
Part Number MRF6V14300HSR5
Description Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V
Product Line 614300HS
PTI RGMA
Material Type Tested Packaged Device
Life Cycle Description (code) PRODUCT MATURITY/SATURATION
Status Active
Application/Qualification Tier 10-YEARS APPLICATION LIFE
Package Information
Parameter Value
Package Type and Termination Count Air Cavity 3
Package Description and Mechanical Drawing NI-780S
Device Weight(g) 3.27290
Package Length (nominal)(mm) 20.570
Package Width (nominal)(mm) 9.780
Package Thickness (nominal)(mm) 3.760
Tape & Reel Yes
Environmental and Compliance Information
Parameter Value
Pb-Free
RoHS Compliant
Halogen Free Yes
Material Composition Declaration (MCD) Download MCD Report Download MCD Report
RoHS Certificate of Analysis (CoA) Contact Us
2nd Level Interconnect e4
Peak Package Body Temperature (PPT)(°C) 260
Maximum Time at Peak Temperature (s) 40
Number of Reflow Cycles 3
REACH SVHC Freescale REACH Statement
Manufacturing Information
Parameter Value
Micron Size(?m) 6
Ordering Information
Parameter Value
Minimum Package Quantity (MPQ) 50
MPQ Container REEL
Exempt from Minimum Delivery Value Yes
Preferred Order Quantity (POQ) 50
POQ Container BOX
Leadtime (weeks) 18
Export Control Classification Number (US) EAR99
Harmonized Tariff (US) Disclaimer 8541.29.0075
CCATS Document -
ENC Status -
Other Trade Compliance Documents -
Budgetary Price excluding tax(US$)
Change Currency -
Order
Product/Process Change Notice (PCN)
Number Type Title Issue Date Effectivity Date
13811 Product Change Notice Reduction in Gold Plating Thickness for RF Power Transistor Products 15 Dec 2009 01 Apr 2010
13952 Product Change Notice RF Power Transistor Internal Matching Capacitor Wafer Fab Transfer 15 Dec 2009 15 Mar 2010
13618 Product Change Notice RF High Power LDMOS - Additional Assembly and Test Site 28 May 2009 26 Aug 2009
13328 Product Change Notice Planned LDMOS Fab Transfer 12 Nov 2008 10 Feb 2009
Operating Characteristics
Parameter Value
Class AB
Die Technology LDMOS
Efficiency (Typ) (%) 60.5
Freq (Max) (MHz) 1400
Freq (Min) (MHz) 1200
Frequency (Max) (MHz) 1400
Frequency Band (Min-Max) (MHz) 1200 to 1400
Matching I/O
Output Power (Typ) (W) @ Intermodulation Level at Test Signal 330 @ Peak
P1dB (Typ) (W) 330
Power Gain (Typ) (dB) @ f (MHz) 18 @ 1400
Sample Exception Availability N
Supply Voltage (Typ) (V) 50
Test Signal Pulse
Thermal Resistance (Spec) (°C/W) 0.13
Reliability Data Lookup
