BC857BF - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 2000 Oct 23 2000 Dec 04

DISCRETE SEMICONDUCTORS

BC857F series

PNP general purpose transistors

M3D425

2000 Dec 04 2

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857F series

FEATURES

•Low current (max. 100 mA)

•Low voltage (max. 65 V).

APPLICATIONS

•General purpose switching and amplification especially

in portable equipment.

DESCRIPTION

PNP transistor in a SC-89 (SOT490) plastic package.

NPN complement: BC847F series.

MARKING

PINNING

TYPE NUMBER MARKING CODE

BC857AF 3E

BC857BF 3F

BC857CF 3G

PIN DESCRIPTION

1 base

2 emitter

3 collector

handbook, halfpage

MAM411

Top view

Fig.1 Simplified outline (SC-89; SOT490) and

symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on a FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −−50 V

VCEO collector-emitter voltage open base −−45 V

VEBO emitter-base voltage open collector −−5V

Ccollector current (DC) −−100 mA

ICM peak collector current −−200 mA

IBM peak base current −−100 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

2000 Dec 04 3

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857F series

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on a FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulsed test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air; note 1 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector-base cut-off current VCB =−30 V; IE=0 −−15 nA

VCB =−30 V; IE= 0; Tj= 150 °C−−5µA

EBO emitter cut-off current VEB =−5 V; IC=0 −−100 nA

hFE DC current gain IC=−2 mA; VCE =−5V

BC857AF 125 250

BC857BF 220 475

BC857CF 420 800

VBE base-emitter voltage IC=−2 mA; VCE =−5V −600 −750 mV

IC=−10 mA; VCE =−5V −−820 mV

VCEsat collector-emitter saturation

voltage IC=−10 mA; IB=−0.5 mA −−200 mV

IC=−100 mA; IB=−5 mA; note 1 −−400 mV

Cccollector capacitance VCB =−10 V; IE=I

e= 0; f = 1 MHz −2.5 pF

fTtransition frequency VCE =−5 V; IC=−10 mA; f = 100 MHz 100 −MHz

F noise ﬁgure IC=−200 µA; VCE =−5 V; Rs=2kΩ;

f = 1 kHz; B = 200 Hz −10 dB

2000 Dec 04 4

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857F series

GRAPHICAL INFORMATION BC857AF

handbook, halfpage

200

300

400

500

hFE

100

MGT711

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.2 DC current gain; typical values.

VCE =−5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT712

−10−2−10−1−1−10 −102−103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

VCE =−5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MGT713

−10−1−1−10 −102−103

IC (mA)

VCEsat

(mV)

(1)

(2)(3)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MGT714

−10−1−1−10 −102−103

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB20.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2000 Dec 04 5

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857F series

GRAPHICAL INFORMATION BC857BF

handbook, halfpage

400

600

800

1000

hFE

200

MGT715

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.6 DC current gain; typical values.

VCE =−5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT716

−10−2−10−1−1−10 −102−103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

VCE =−5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MGT717

−10−1−1−10 −102−103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MGT718

−10−1−1−10 −102−103

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.9 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB20.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2000 Dec 04 6

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857F series

GRAPHICAL INFORMATION BC857CF

handbook, halfpage

400

600

800

1000

hFE

200

MGT719

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.10 DC current gain; typical values.

VCE =−5V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT720

−10−1−1−10 −102−103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.11 Base-emitter voltage as a function of

collector current; typical values.

VCE =−5V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

−104

−103

−102

−10

MGT721

−10−1−1−10 −102−103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.12 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 20.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

MGT722

−10−1−1−10 −102−103

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.13 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB20.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2000 Dec 04 7

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857F series

PACKAGE OUTLINE

UNIT bpcDE e1HELpwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

98-10-23

IEC JEDEC EIAJ

mm 0.33

0.23 0.2

0.1 1.7

1.5 0.95

0.75 0.5

1.0 1.7

1.5 0.1

0.1

DIMENSIONS (mm are the original dimensions)

0.5

0.3

SOT490 SC-89

detail X

vMA

0 1 2 mm

scale

0.8

0.6

Plastic surface mounted package; 3 leads SOT490

2000 Dec 04 8

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857F series

DATA SHEET STATUS

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DATA SHEET STATUS PRODUCT

STATUS DEFINITIONS (1)

Objective speciﬁcation Development This data sheet contains the design target or goal speciﬁcations for

product development. Speciﬁcation may change in any manner without

notice.

Preliminary speciﬁcation Qualiﬁcation This data sheet contains preliminary data, and supplementary data will be

published at a later date. Philips Semiconductors reserves the right to

make changes at any time without notice in order to improve design and

supply the best possible product.

Product speciﬁcation Production This data sheet contains ﬁnal speciﬁcations. Philips Semiconductors

reserves the right to make changes at any time without notice in order to

improve design and supply the best possible product.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuse of anyoftheseproducts,conveysnolicence or title

under any patent, copyright, or mask work right to these

products,andmakesnorepresentations or warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2000 Dec 04 9

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857F series

NOTES

2000 Dec 04 10

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857F series

NOTES

2000 Dec 04 11

Philips Semiconductors Product speciﬁcation

PNP general purpose transistors BC857F series

NOTES

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Internet: http://www.semiconductors.philips.com

2000 70

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Printed in The Netherlands 613514/04/pp12 Date of release: 2000 Dec 04 Document order number: 9397 750 07661