BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25C) SOT-23 Characteristic Symbol Rating Unit Collector-Base Voltage Veso -32 Vv Collector-Emitter Voltage VcEo -32 Vv Emitter-Base Voltage VeBo -5.0 Vv Collector Current Ic -100 mA Collector Dissipation Po 350 mw Storage Temperature Tste -55 ~ 150 C Refer to KS5086 for graphs ELECTRICAL CHARACTERISTICS (T,=25C) 1. Base 2. Emitter 3. Collector ee FAIRCHILD fd SEMICONDUCTOR m 1999 Fairchild Semiconductor Corporation Characteristic Symbol Test Conditions Min Max Unit Collector-Emitter Breakdown Voltage BV ceo Ic= -2mA, Ip=O -32 Vv Emitter-Base Breakdown Voltage BVeEBo le= -1p/A, Ic=0 -5 Vv Collector Cut-off Current lees Vop= -32V, Vee=0 -20 nA DC Current Gain Hee : BCW61B Voe= -5V, lo= -10HA 20 : BCW61C 40 : BCW61D 100 : BCW61A Vce= -5V, le= -2mA 120 220 : BCW61B 140 310 : BCW61C 250 460 : BCW61D 380 630 : BCW61A Voce= -5V, Ic= -50mA 60 : BCW61B 80 : BCW61C 100 : BCW61D 100 Collector-Emitter Saturation Voltage Vce (sat) Io= -5OMA, Ip= -1.25mMA -0.55 Vv Ic= -10mA, Ip= -0.25mA -0.25 Vv Base-Emitter Saturation Voltage Vee (sat) Ic= -50MA, Ip= -1.25mA 0.68 1.05 Vv Ic= -10mA, Ip= -0.25mA 0.6 0.85 Vv Base-Emitter On Voltage Vee (on) Vee= -SV, Io= -2mA 0.6 0.75 v Output Capacitance Cos Vep= -10V, Ip=0 6 pF f=1MHz Noise Figure NF Io= -0.2mA, Vce= -5V 6 dB Rg=20KQ, f=1KHz Turn On Time ton Ic= -10MA, Ip1=-1mA 150 ns Turn Off Time torr Vep= -3.6V, Ip2= -1mA 800 ns R1=R2=50KQ, R.=9902 Marking gq BA 4 Rev. BBCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR MARKING CODE TYPE BCW6s1A | BCW61iB | BCW6eiC | BCW6ID MARK. BA BB BC BD ee FAIRCHILD fd SEMICONDUCTOR m