Semiconductor Group 1 Dec-20-1996
BAT 68W
Preliminary data
Silicon Schottky Diodes
• For mixer applications in the VHF/UHF range
• For high speed switching
BAT 68-04W BAT68-05W BAT68-06W
Type Marking Ordering Code Pin Configuration Package
BAT 68-04W 84s Q62702- 1 = A1 2 = K2 3 = K1/A2 SOT-323
BAT 68-05W 85s Q62702- 1 = A1 2 = A2 3 = K1/K2 SOT-323
BAT 68-06W 86s Q62702- 1 = K1 2 = K2 3 = A1/A2 SOT-323
BAT 68W 83s Q62702- 1 = A n.c. 3 = K SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
V
R 8 V
Forward current
I
F 130 mA
Total power dissipation, BAT68W
T
S=97°C
P
tot 150 mW
Total power dissipation, BAW68-04...06W
T
S=92°C
P
tot 150
Junction temperature
T
j 150 °C
Operating temperature range
T
op - 65 ... + 150
Storage temperature
T
stg - 65 ... + 150
Thermal Resistance
Junction - ambient, BAT68W
R
thJA ≤ 435 K/W
Junction - ambient, BAT68-04W...06W
R
thJA ≤ 550
Junctui - soldering point, BAT68W RthJS ≤ 355
Junction - soldering point, BAT68-04W...06W
R
thJS 390
Semiconductor Group 2 Dec-20-1996
BAT 68W
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
(BR) = 100 µA
V
(BR) 8 - - V
Reverse current
V
R = 1 V,
T
A = 25 °C
V
R = 1 V,
T
A = 60 °C
I
R
-
--
- 1.2
0.1 µA
Forward voltage
I
F = 1 mA
I
F = 10 mA
V
F
340
- 390
318 500
340 mV
Diode capacitance
V
R = 1 V,
f
= 1 MHz
C
T- - 1 pF
Differential forward resistance
I
F = 5 mA
R
F- - 10 Ω
Forward current
I
F =
f
(
T
A*;
T
S)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
BAT 68W
020 40 60 80 100 120 °C 150
T
A
,T
S
0
20
40
60
80
100
120
140
160
mA
200
I
F
T
S
T
A
Forward current
I
F =
f
(
T
A*;
T
S)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
BAT 68-04W, -05W, -06W
020 40 60 80 100 120 °C 150
T
A
,T
S
0
20
40
60
80
100
120
140
160
mA
200
I
F
T
S
T
A
Semiconductor Group 3 Dec-20-1996
BAT 68W
Permissible Pulse Load
R
THJS =
f
(
t
p)
BAT 68W
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
I
Fmax/
I
FDC =
f
(
t
p)
BAT 68W
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
-
I
Fmax/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
R
THJS =
f
(
t
p)
BAT 68-04W, -05W, -06W
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
I
Fmax/
I
FDC =
f
(
t
p)
BAT 68-04W, -05W, -06W
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
-
I
Fmax/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 4 Dec-20-1996
BAT 68W
Diode capacitance
C
T =
f
(
V
R)
f
= 1MHz Differential forward resistance
r
f =
f
(
I
F)
f
= 10kHz
Forward Current
I
F =
f
(
V
F)Reverse current
I
R =
f
(
T
A)
V
R = 28V
