MMBT3904
Document number: DS30036 Rev. 19 - 2 1 of 6
www.diodes.com June 2012
© Diodes Incorporated
MMBT3904
40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT3906)
Ideal for Medium Power Amplification and Switching
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound,
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe). Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Ordering Information (Notes 4 & 5)
Product Grade Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBT3904-7-F Commercial K1N / C1N 7 8 3,000
MMBT3904Q-7-F Automotive K1N 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
5. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
SOT23
Device Symbol Top View
Pin-Out
C
B
E
Product Type Marking Code:
xxx = K1N or C1N
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
xxx
YM
MMBT3904
Document number: DS30036 Rev. 19 - 2 2 of 6
www.diodes.com June 2012
© Diodes Incorporated
MMBT3904
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 7) IC 200 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector Power Dissipation (Note 6) PD 310 mW
(Note 7) 350
Thermal Resistance, Junction to Ambient (Note 6) RθJA 403 °C/W
(Note 7) 357
Thermal Resistance, Junction to Leads (Note 8) RθJL 350 °C/W
Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C
Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
7. For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
8.Thermal resistance from junctio n to solder-point (at the end of the collector lead).
0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperatu re (°C)
Ma x Powe r Di ssipati on (W )
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Imped an ce
D=0.5
D=0.2 D=0.1 Single Pulse
D=0.05
The rmal R e si stan ce C/ W )
Puls e Width (s)
10m 100m 1 10 100 1k
0.1
1
10 Single Pulse. Tamb=25°C
Pulse Power Dissipation
Puls e Width (s)
Max P owe r Dissip at i on (W)
MMBT3904
Document number: DS30036 Rev. 19 - 2 3 of 6
www.diodes.com June 2012
© Diodes Incorporated
MMBT3904
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO 60 V IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 9) BVCEO 40 V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6.0 V IE = 10μA, IC = 0
Collector Cutoff Current ICEX 50 nA
VCE = 30V, VEB
(
OFF
)
= 3.0V
Base Cutoff Current IBL 50 nA
VCE = 30V, VEB
(
OFF
)
= 3.0V
ON CHARACTERISTICS (Note 9)
DC Current Gain hFE
40
70
100
60
30
300
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(sat) 0.20
0.30 V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE(sat) 0.65
0.85
0.95 V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo 4.0 pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo 8.0 pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 10 kΩ VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.5 8.0 x 10-4
Small Signal Current Gain hfe 100 400
Output Admittance hoe 1.0 40 μS
Current Gain-Bandwidth Product fT 300 MHz VCE = 20V, IC = 10mA,
f = 100MHz
Noise Figure NF 5.0 dB
VCE = 5.0V, IC = 100μA,
RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time td 35 ns
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA Rise Time t
r
35 ns
Storage Time ts 200 ns
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA Fall Time tf 50 ns
Notes: 9. Short duration pulse test used to minimize self-heating effect.
MMBT3904
Document number: DS30036 Rev. 19 - 2 4 of 6
www.diodes.com June 2012
© Diodes Incorporated
MMBT3904
1
10
1,000
100
0.1 110 1,000
100
h, D
C
C
U
R
R
EN
T
G
AIN
FE
I , COLLECTOR CURRENT (mA)
Fig. 1 T ypical DC Current Gain vs. Collector Current
C
0.01
0.1
1
0.1 1 10 100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
(V)
CE(SAT)
SATURATION VOLTAGE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical Collector-Emitter Saturation Voltage
vs. Co l l ect or Cu rre nt
C
0.1
1
10
0.1 110 100 1,000
V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N V
O
L
T
A
G
E (V)
BE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 3 T y pical Base-Emitter Saturation Vo ltage
vs. Col lecto r Cu r rent
C
0
5
1
5
10
0.1 110 100
C
A
P
A
C
I
T
AN
C
E (p
F
)
V , REVERSE VOL TAGE (V)
Fig . 4 Typical Cap aci t ance Character istics
R
0.001
0.01
0.1
1
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A)
C
Fig. 5 Typical Collector Current
vs. Collector-Emitter Volt age
DC
Pw = 100ms
Pw = 10ms
T = 25°C
A
Single Non-repetitive Pulse
DUT mounted onto 1xMRP
FR-4 board
MMBT3904
Document number: DS30036 Rev. 19 - 2 5 of 6
www.diodes.com June 2012
© Diodes Incorporated
MMBT3904
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
MMBT3904
Document number: DS30036 Rev. 19 - 2 6 of 6
www.diodes.com June 2012
© Diodes Incorporated
MMBT3904
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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changes without further notice to this doc ument and an y product described herein. Diodes Incorporat ed does not assu me any liability arising
out of the application or use of this document or any product descr ibed herein; neither does Diodes Incorporated convey any license under
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
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express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
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the failure of the life support device or to affect its safety or effectiveness.
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