1. Product profile
1.1 General description
Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless
ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to protect
one signal line from the dama ge caused by ESD and other tr ansi ents. Th e combination o f
extremely low capacitance, high ESD maximum rating and ultra small package makes the
device ideal for high-speed data line protection and antenna protection applications.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
Rev. 3 — 24 October 2011 Product data sheet
Bidirectional ESD protection of one line ESD protection up to 10 kV
Femtofarad capacitance: Cd= 400 fF IEC 61000-4-2; level 4 (ESD)
Low ESD clamping voltage: 30 V
at 30 ns and 8kV
AEC-Q101 qualified
Very low leakage current: IRM <1nA
10/100/1000 Mbit/s Ethernet Portable electronics
FireWire Communication systems
High-speed data lines Computers and pe rip h er als
Subscriber Identity Module (SIM) card
protection
Audio and video equipment
Cellular handsets and accessories Antenna protection
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per device
VRWM reverse standoff voltage - - 5.5 V
Cddiode capacitance f = 1 MHz; VR=0V - 0.4 0.55 pF
PESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 2 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode (diode 1)
2 cathode (diode 2)
21
Transparent
top view
sym045
21
Tabl e 3. Ordering i nfo rmation
Type number Package
Name Description Version
PESD5V0F1BL - leadless ultra small plastic package; 2 terminals;
body 1.0 0.6 0.5 mm SOD882
Table 4. Marking codes
Type number Marking code
PESD5V0F1BL ZZ
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
IPP peak pulse current tp=8/20s[1] -2.5A
Tjjunction temperature - 125 C
Tamb ambient temperature 40 +125 C
Tstg storage temperature 55 +125 C
PESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 3 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
[1] Device stressed with ten non-repetitive ESD pulses.
Table 6. ESD maximum ratings
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per device
VESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge) [1] -10kV
MIL-STD-883
(human body model) -10kV
Table 7. ESD standards compliance
Standard Conditions
Per device
IEC 61000-4-2; level 4 (ESD) > 8 k V (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
Fig 1. 8/20 s pulse waveform according to
IEC 61000-4-5 Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t (μs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
et
100 % IPP; 8 μs
50 % IPP; 20 μs
001aaa631
I
PP
100 %
90 %
t
30 ns 60 ns
10 %
t
r
= 0.7 ns to 1 ns
PESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 4 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
6. Characteristics
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per device
VRWM reverse standoff
voltage --5.5V
IRM reverse leakage current VRWM = 5 V - 1 100 nA
VBR breakdown voltage IR=1mA 6 8 10 V
Cddiode capacitance f = 1 MHz; VR=0V - 0.4 0.55 pF
VCL clamping voltage [1]
IPP =1A - - 11 V
IPP =2.5A - - 15 V
rdif differential resistance IR=20mA - - 30
f=1MHz; T
amb =25C
Fig 3. Diode capacitance as a function of reverse
voltage; typical values Fig 4. V-I characteristics for a bidirec tional
ESD protection diode
VR (V)
6.0 6.02.02.0
006aab598
0.3
0.4
0.5
Cd
(pF)
0.2
006aaa676
V
CL
V
BR
V
RWM
V
CL
V
BR
V
RWM
I
RM
I
RM
I
R
I
R
I
PP
I
PP
+
PESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 5 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
Fig 5. ESD clamping test setu p and waveforms
006aab599
50 Ω
RZ
CZ
DUT
(DEVICE
UNDER
TEST)
GND
GND
450 Ω
RG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
unclamped 8 kV ESD pulse waveform
(IEC 61000-4-2 network) clamped 8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
vertical scale = 50 V/div
horizontal scale = 15 ns/div
vertical scale = 50 V/div
horizontal scale = 15 ns/div
PESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 6 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
7. Application information
PESD5V0F1BL is designed for the protection of one bidirectional data or signal line from
the damage caused by ESD and surge pulses. The device may be used on lines where
the signal polarities are both, positive and negative with respect to ground.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as clos e to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualifica tion for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 6. Application di ag ram
006aab600
PESD5V0F1BL
GND
GPS
ANTENNA
PESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 7 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
This is a generic drawing for SOD882 package. This product has no cathode marking.
Fig 7. Package outline PESD5V0F1BL (SOD882)
03-04-17Dimensions in mm
0.55
0.47
0.65
0.62
0.55 0.50
0.46
cathode marking on top side
1.02
0.95
0.30
0.22
0.30
0.22
2
1
Table 9. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
10000
PESD5V0F1BL SOD882 2 mm pitch, 8 mm tape and reel -315
PESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 8 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
11. Soldering
Reflow soldering is the only recommended soldering method.
Fig 8. Reflow soldering footprint PESD5V0F1BL (SOD882)
PESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 9 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESD5V0F1BL v.3 20111024 Product data sheet - PESD5V0F1BL v.2
Modifications: Figure 7 “Package outline PESD5V0F1BL (SOD882): updated.
Section 13 “Legal information: updated.
PESD5V0F1BL v.2 20110323 Product data sheet - PESD5V0F1BL v.1
PESD5V0F1BL v.1 20091001 Product data sheet - -
PESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 10 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product sta tus of device (s) descri bed in this d ocument m ay have cha nged since thi s docume nt was publish ed and ma y diffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
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Applications — Applications that are described herein for any of these
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
PESD5V0F1BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 24 October 2011 11 of 12
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PESD5V0F1BL
Femtofarad bidirectional ESD protection diode
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 October 2011
Document identifier: PESD 5 V0F1 BL
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information . . . . . . . . . . . . . . . . . . . . . 7
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12