© 2008 IXYS CORPORATION, All rights reserved DS99876A (04/08)
VDSS = 1000V
ID25 = 11A
RDS(on) ≤≤
≤≤
≤ 640mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
G = Gate D = Drain
S = Source
IXFR20N100P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 1000 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ± 30V, VDS = 0V ± 200 nA
IDSS VDS = VDSS 25 μA
VGS = 0V TJ = 125°C 1.5 mA
RDS(on) VGS = 10V, ID = 10A, Note 1 470 640 mΩ
PolarTM Power MOSFET
HiPerFETTM
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C11A
IDM TC= 25°C, pulse width limited by TJM 50 A
IAR TC= 25°C10A
EAS TC= 25°C 500 mJ
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 15 V/ns
PDTC= 25°C 230 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
TSOLD Plastic body for 10s 260 °C
VISOL 50/60 Hz, RMS, 1 minute 2500 V~
FCMounting force 20..120/4.5..27 N/lb.
Weight 5g
Isolated Tab
ISOPLUS247 (IXFR)
E153432
Features
•Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
•Low drain to tab capacitance(<30pF)
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Fast intrinsic Rectifier
Applications
•Switched-mode and resonant-mode
power supplies
•DC-DC converters
•Laser Drivers
•AC and DC motor controls
•Robotics and servo controls
Advantages
•Easy assembly
•Space savings
•High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR20N100P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 20V, ID = 10A, Note 1 8 14 S
Ciss 7300 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 456 pF
Crss 55 pF
RGi Gate input resistance 1.20 Ω
td(on) 40 ns
trResistive Switching Times 37 ns
td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 10A 56 ns
tfRG= 2Ω (External) 45 ns
Qg(on) 126 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 10A 50 nC
Qgd 55 nC
RthJC 0.54 °C/W
RthCS (TO-247) 0.15 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 20 A
ISM Repetitive, pulse width limited by TJM 80 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 0.9 μC
IRM 9.0 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IF = 10A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
ISOPLUS247 (IXFR) Outline
© 2008 IXYS CORPORATION, All rights reserved
IXFR20N100P
Fi g. 1. Ou tpu t C h ar ac ter i sti c s
@ 25ºC
0
2
4
6
8
10
12
14
16
18
20
01234567891011
V
DS
- V olts
I
D
- Am peres
V
GS
= 10V
8V
7V
6V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- A mpe res
V
GS
= 10V
7V
8V
9V
Fig. 3. Output Characteristics
@ 125ºC
0
2
4
6
8
10
12
14
16
18
20
0 2 4 6 8 1012141618202224
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
9V
8V
6V
7V
Fig. 4. RDS(on) Normalized to ID = 10A Valu e
vs. Ju ncti o n Temper atu re
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Ce ntigrade
R
DS(on)
- N ormaliz ed
V
GS
= 10V
I
D
= 20A
I
D
= 10A
Fig. 5. RDS(on) Normalized to ID = 10A Value
vs. Dr ai n C ur r en t
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0 5 10 15 20 25 30 35 40
I
D
- Ampe res
R
DS(on)
- N ormaliz ed
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fi g . 6 . Maximum D r ai n C ur r en t vs.
Cas e Temper atu r e
0
1
2
3
4
5
6
7
8
9
10
11
12
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- A mp e res
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR20N100P
IXYS REF: F_20N100P (85) 04-01-08-B
Fi g . 12. Maximum Tr an si en t Thermal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Input Ad mittance
0
5
10
15
20
25
30
35
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GS
- Vo lts
I
D
- A mpe res
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Tr ansconductance
0
4
8
12
16
20
24
28
32
0 5 10 15 20 25 30 35
I
D
- Ampe res
g f s
- S ie me ns
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Vo lts
I
S
- A mperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180
Q
G
- NanoCoulombs
V
GS
- V o lts
V
DS
= 500V
I
D
= 10A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1MHz
Ciss
Crss
Coss
