PolarTM Power MOSFET HiPerFETTM IXFR20N100P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 11 A IDM TC = 25C, pulse width limited by TJM 50 A IAR TC = 25C 10 A EAS TC = 25C 500 mJ dV/dt IS IDM, VDD VDSS, TJ 150C 15 V/ns PD TC = 25C 230 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ TL Maximum lead temperature for soldering 300 C TSOLD Plastic body for 10s 260 C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ FC Mounting force 20..120/4.5..27 N/lb. 5 g Weight = 1000V = 11A 640m 300ns ISOPLUS247 (IXFR) E153432 Isolated Tab G = Gate S = Source D = Drain Features * Silicon chip on Direct-Copper-Bond * * * * substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 10A, Note 1 V V 200 nA 25 A 1.5 mA TJ = 125C (c) 2008 IXYS CORPORATION, All rights reserved 6.5 470 640 m * * * * * Switched-mode and resonant-mode power supplies DC-DC converters Laser Drivers AC and DC motor controls Robotics and servo controls Advantages * * * Easy assembly Space savings High power density DS99876A (04/08) IXFR20N100P Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 10A, Note 1 8 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate input resistance td(on) ISOPLUS247 (IXFR) Outline 14 S 7300 pF 456 pF 55 pF 1.20 40 ns tr Resistive Switching Times 37 ns td(off) VGS = 10V, VDS = 0.5 * VDSS, ID = 10A 56 ns tf RG = 2 (External) 45 ns 126 nC Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 10A Qgd 50 nC 55 nC 0.54 C/W RthJC RthCS C/W (TO-247) 0.15 Source-Drain Diode TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 20 A ISM Repetitive, pulse width limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 10A, -di/dt = 100A/s 300 ns QRM VR = 100V, VGS = 0V IRM 0.9 C 9.0 A Note 1: Pulse test, t 300s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR20N100P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 20 40 VGS = 10V 8V 18 VGS = 10V 35 16 ID - Amperes ID - Amperes 9V 30 14 7V 12 10 8 25 20 8V 15 6 10 6V 4 7V 5 2 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 20 3.0 VGS = 10V 9V 18 2.8 VGS = 10V 2.6 8V 14 ID - Amperes RDS(on) - Normalized 16 12 10 8 7V 6 2.4 2.2 2.0 I D = 20A 1.8 1.6 I D = 10A 1.4 1.2 1.0 4 0.8 6V 2 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 12 VGS = 10V 2.4 11 TJ = 125C 10 9 2 ID - Amperes RDS(on) - Normalized 2.2 1.8 1.6 1.4 8 7 6 5 4 3 1.2 2 TJ = 25C 1 1 0.8 0 0 5 10 15 20 25 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 30 35 40 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFR20N100P Fig. 7. Input Admittance Fig. 8. Transconductance 35 32 30 28 TJ = - 40C 24 g f s - Siemens ID - Amperes 25 20 TJ = 125C 25C - 40C 15 10 25C 20 16 125C 12 8 5 4 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 15 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 30 35 Fig. 10. Gate Charge 16 60 VDS = 500V 14 I D = 10A 50 I G = 10mA 12 VGS - Volts 40 IS - Amperes 20 ID - Amperes 30 10 8 6 20 TJ = 25C 4 TJ = 125C 10 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 VSD - Volts 60 80 100 120 140 160 180 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.00 Ciss 10,000 1,000 Z(th)JC - C / W Capacitance - PicoFarads f = 1MHz Coss 0.10 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_20N100P (85) 04-01-08-B