FIELD-EFFECT TRANSISTOR, SILICON. N CHANNEL TRANSISTOR A EFFET DE CHAMP, SILICIUM. CANAL N *2N 4091,A *2N 4092 A *2N 4093, A K Preferred device Dispositif recommand Fast switching Commutation rapide 30mA min. 2N4091,A Chopper lpss 15mA min. 2N 4092, A Dcoupeur . 8mA min. 2N 4093, A 30 2 max. 2N 4091,A 'pson { . 502 max. 2N 4092, A 80 2 max. 2N 4093, A Maximum power dissipation Case TO-18 See outline drawing CB-6 on last pages Dissipation de puissance maximale Boitier Voir dessin cot CB-6 dernires pages Prot (w} 1,8 N | rat J es rt oN 0,6 | N | ~ 0 0 Weight : 0,32 g. Gate is connected to case 50 100 160 200 Tease (C) Masse La grille est retie au boitier ABSOLUTE RATINGS ( LIMITING VALUES ) T =4250C ( unless otherwise stated ) VALEURS LIMITES ABSOLUES D'UTILISATION amb { sauf indication contraire ) 2N 4091,2N 4092 2N 4091 A,2N 4092A 2N 4093 2N 4093 A Drain source voltage Tension drain source Vos 40 50 Vv Gate source voltage 40 50 y Tension grille source VGs - - Gate drain voltage Tension grille drain VeD 40 50 Vv Gate current Courant de grille IG 10 10 mA Power dissipation Dissipation de puissance Tease 25 C Prot 18 1,8 Ww Junction temperature , Temprature de jonction max Tj +175 +175 Cc Storage temperature min t 55 ~ 55 Temprature de stockage max stg +200 +200 C 78-47 1/7 A rovsnece DMSION SEICONDUCTEURS Seswoseem 7882N 4091, A - 2N 4092, A - 2N 4093, A STATIC CHARACTERIST! CARACTERISTIQUES STATIQUES cs Tamb = + 25C (unless otherwise stated } ( sauf indication contraire } Test conditions . Conditions de mesure min vp max 2N 4091 Ves =-20V 2N 4092 , 0,2 | nA Vps = 2N 4093 2N 4091 A Ves =20V 2N 4092 A 0,025) na Vos = 2N 4093 A Total leakage gate current less Courant de fuite total de grille Ves =~ 20V 2N 4097 Vps = 2N 4092 0,4 | BA Tamb = 150 C 2N 4093 Ve6s =-20V 2N 4091 A Vps =0 2N 4092 A - 0,05! uA Tamb = 150 C 2N 4093 A 2N 4091 2N 4092 40 Vv 2N 4093 Gate source breakdown voltage Vos = OV V(BR)GSS Tension de claquage grille source] lq =1yHA 2N 4091 A 2N 4092 A 650 v 2N 4093 A Vps =20V 2N 4091 0,2 | nA Vgs =12V 2N 4091 A 0,025 | nA Vps =20V 2N 4092 0,2 | na Veg =8V 2N 4092 A 0,025 | n& Vos =20V 2N 4093 0,2 nA Vv, =e 2N 4093 A 0,025 | nA Drain cut-off current Gs ad Ipsx Courant rsiduel de drain vos : 0 Vv 2N 4091 04 | uA Toe, = 180C 2N 4091 A 0,05 | pA Vv = 20V vee = BV 2N 4092 0,4 | pA hen = 160C 2N 4092 A 0,05 | pA = 20V yOs = OV 2N 4093 04 | uA ne = 160C 2N 4093 A 0,05 | uA lamb = 2n 4001,A | 30 mA Drain current _ Vos = 20V Ipss" 2N 4092,A | 15 mA Courant de drain Ves = 0 2N 4093,A| 8 mA =2 2N 4091,A] -5 -10] Vv Gate source cut-off voltage Vos = 20V Vv 2N 4092,A| _2 -7/Vv Tension grille source de blocage | \D = 1nA GSoff 2N 4093,A] 1 -5 |v * Pulsetyion tp < 300us 8 < 2% 217 7862N 4091, A - 2N 4092, A- 2N 4093, A STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES Tamb = 25C (Unless otherwise stated) {Sauf indications contraires) Test conditions Conditions de mesure Min. Typ. Max. Vec=0 , . = 66 mA Vos sat | 2N 4091, 0,2 v Drain source saturation voltage Vane = 0 S Tension de saturation drain source In =4mA Vps sat 2N 4092, A 0,2 Vv Vaec=0 a = 25mA Vos sat 2N 4093, A 0,2 Vv On state drain source resistance Ves =0 r 2N 4091, A 0 . Rsistance drain source a Itat Ip = 1mA DS on 2N 4092, A passant 2N 4093,A 80 2 DYNAMIC CHARACTERISTICS (for small signals) CARACTERISTIQUES DYNAMIQUES (pour petits signaux) Vv = On state drain source resistance \ GS r 2N 4091, A 0 . Rsistance drain source a I6tat ie _ 1kH ds on 2N 4092, A passant = z 2N 4093, A 80 2 Ves = 2N 4091, A f = 1MHz Cats 2N 4092, A 28 pF . Vos =0 2N 4093, A Input capacitance Capacit dentre Ves =9 2N 4091, A f =1MHz Cuts 2N 4092, A (16*) pF (Vpg = 20 V*) 2N 4093, A : Voce = 0 2N 4091, A Reverse transfer capacitance DS ' Capacit de transfert inverse Veg =-20V C1256 2N 4092, A 5 pF f = 1MHz 2N 4093, A * Indicates JEDEC registred data Valeurs dorigine JEDEC pour information 3/7 7872N 4091, A- 2N 4092, A - 2N 4093, A SWITCHING CHARACTERISTICS T =25C (Unless otherwise stated) CARACTERISTIQUES DE COMMUTATION amb (Sauf indications contraires} Test conditions i Conditions de mesure Min. Typ. Max. Turn-on delay time Retard 4 la croissance talon) 2N 4091, A 15 ns Rise time Vas on 0 Temps de croissance Vesx =-12V t 2N 4091, A 10 ns Ip on *6,6mA Turn-off time t Temps total de dcroissance off 2N 4091, A 40 ms Turn-on delay time 2N 4092, A 1 Retard a la croissance *dion) , 8 " Rise time Ves on 9 t 2N 4002, A 20 ns Temps de croissance Vesx =-8V r Ipbon @4mA Turn-off time tots 2N 4092, A 60 ns Temps total de dcroissance Turn-on delay time t 2N 4093, A 20 ns Retard & la croissance d(on) Von =3V Rise time Vas on 9 t, 2N 4093, A 40 ns Temps de croissance Vesx =-6V Inon 2,5mA Turn off time tort 2N 4083, A 80 ns Temps total de dcroissance 47 7882N 4091, A- 2N 4092, A- 2N 4093, A SWITCHING TIMES TESTS CIRCUITS SCHEMAS DE MESURES DES TEMPS DE COMMUTATION Re 1 pF Generator v2 | Gnrateur * u Oscilloscope 29 = 500 vl v4 VS Oscilloscope & Stns LS * 2, #600 te <1ns 1 t t, Tus 59% ko 08 JU t S04 ns & = 10% C, <1,7 pF 50 + | a Vop T we i) vid OV 90 % 12V (2N 4091,A) VGSx -8V (2N 4092, A) 50% -~6V (2N 4093, A} } gy 10 % vit = -GSX 41 t % v2 ott ton Ta (oft) % tdion) te =Vop 10% = 66mA (2N 4091,A) IDon w4mA (2N 4092, A) & 2,6 mA (2N 4093, A} 90 % 1 x 28.2 V Don a 6/7 7892N 4091, A- 2N 4092, A - 2N 4093, A STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES (mA) 75 50 25 0 0 5 10 15 Vp tv) I 0 T (mA) [2N 4093, A Vag =0V t, 300 us 15 Pe2% 7 -0,5V 10 5 -1V5 -15V Q 5 0 10 15 Vog{vI {mA) 60 40 20 2N 4082, 4 ty $300 us 5 <2% Ves =9 / -1V VA | ov 3V -4V 0 5 10 15 Vps'V) 0 1 23 4 5 6 7 B ~Vgslvi 6/7 7902N 4091, A - 2N 4092, A - 2N 4093, A DYNAMIC CHARACTERISTICS CARACTERISTIQUES DYNAMIQUES 4093, a] | 2N 4091, A 2N 4092,A 01 2 3 4 5 6 7 8 Vgsiv) C126 t i ss F {pF Vgg=-12V pe Vpg=15V 8 f =1MHz-~ f =1 Tamb = 25C Tamb = 28C 6 a 1 3. 10 QPS Max 2 J a. Min. 1,5 10 10 Qo 5 10 15 20 Vps!) 0 5 10 15 ~Veglv) WT 791