ON Semiconductor NPN Complementary Power Darlingtons MJF122 PNP MJF127 For Isolated Package Applications Designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. * * * * * * * COMPLEMENTARY SILICON POWER DARLINGTONS 5 AMPERES 100 VOLTS 30 WATTS Electrically Similar to the Popular TIP122 and TIP127 100 VCEO(sus) 5 A Rated Collector Current No Isolating Washers Required Reduced System Cost High DC Current Gain -- 2000 (Min) @ IC = 3 Adc UL Recognized, File #E69369, to 3500 VRMS Isolation IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII III IIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII III IIIII II IIIIIIIIIIIIIIII III IIIII II IIIIIIIIIIIIIIII III IIIII II IIIIIIIIIIIIIIII III IIIII II IIIIIIIIIIIIIIII III IIIII II II IIIIIIIIIIIIIIII III IIIII IIIIIIIIIIIIIIII III IIIII II II IIIIIIIIIIIIIIII III IIIII IIIIIIIIIIIIIIII III IIIII II IIIIIIIIIIIIIIII III IIIII II IIIIIIIIIIIIIIII III IIIII II II IIIIIIIIIIIIIIII III IIIII IIIIIIIIIIIIIIII III IIIII II IIIIIIIIIIIIIIII III IIIII II II IIIIIIIIIIIIIIII III IIIII IIIIIIIIIIIIIIII III IIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII III IIIII II IIIIIIIIIIIIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIIIII III MAXIMUM RATINGS Rating Symbol Value Unit VCEO 100 Vdc Collector-Base Voltage VCB 100 Vdc Emitter-Base Voltage VEB 5 Vdc VISOL 4500 3500 1500 VRM S Collector Current -- Continuous Peak IC 5 8 Adc Base Current IB 0.12 Adc Total Power Dissipation* @ TC = 25C Derate above 25C PD 30 0.24 Watt s W/ C Total Power Dissipation @ TA = 25C Derate above 25C PD 2 0.016 Watt s W/ C TJ, Tstg -65 to +150 IC Collector-Emitter Voltage RMS Isolation Voltage (1) (for 1 sec, R.H. < 30%, TA = 25C) Test No. 1 Per Fig. 14 Test No. 2 Per Fig. 15 Test No. 3 Per Fig. 16 Operating and Storage Junction Temperature Range 1 2 3 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 221D-02 TO-220 TYPE THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 62.5 C/W Thermal Resistance, Junction to Case* RJC 4.1 C/W Lead Temperature for Soldering Purpose TL 260 C *Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. (1) Proper strike and creepage distance must be provided. Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 3 1 Publication Order Number: MJF122/D MJF122 MJF127 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 -- Vdc Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO -- 10 Adc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO -- 10 Adc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO -- 2 mAdc hFE 1000 2000 -- -- -- Collector-Emitter Saturation Voltage (IC = 3 Adc, IB = 12 mAdc) Collector-Emitter Saturation Voltage (IC = 5 Adc, IB = 20 mAdc) VCE(sat) -- -- 2 3.5 Vdc Base-Emitter On Voltage (IC = 3 Adc, VCE = 3 Vdc) VBE(on) -- 2.5 Vdc hfe 4 -- -- Cob -- -- 300 200 pF OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) ON CHARACTERISTICS (1) DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc) DC Current Gain (IC = 3 Adc, VCE = 3 Vdc) DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJF127 MJF122 (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g., 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA SCOPE RB 51 0 V1 APPROX. -12 V 25 s tr, tf 10 ns DUTY CYCLE = 1% D1 8 k 2 t, TIME (s) V2 APPROX. +8 V RC TUT 120 ts 3 VCC -30 V 0.3 0.2 +4 V 0.1 0.07 0.05 0.1 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. tf 1 0.7 0.5 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 tr td @ VBE(off) = 0 V PNP NPN 3 0.5 0.7 1 2 0.3 IC, COLLECTOR CURRENT (AMP) 5 Figure 2. Typical Switching Times Figure 1. Switching Times Test Circuit http://onsemi.com 2 7 10 MJF122 MJF127 PD, POWER DISSIPATION (WATTS) TA TC 4 80 3 60 TC 2 40 TA 1 20 0 0 40 20 60 80 100 120 140 160 T, TEMPERATURE (C) Figure 3. Maximum Power Derating r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.3 0.2 0.1 SINGLE PULSE RJC(t) = r(t) RJC TJ(pk) - TC = P(pk) RJC(t) 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 t, TIME (ms) 100 200 300 500 1K 2K 3K 5K 10K Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMPS) 10 100 s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 5 3 1ms TJ = 150C 2 d c 5 ms 1 CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) 0.5 0.3 0.2 0.1 1 2 3 5 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Maximum Forward Bias Safe Operating Area http://onsemi.com 3 MJF122 MJF127 200 C, CAPACITANCE (pF) 300 5000 3000 2000 hfe , SMALL-SIGNAL CURRENT GAIN 10,000 1000 500 300 200 TC = 25C VCE = 4 Vdc IC = 3 Adc 100 50 30 20 10 2 5 Cob 100 Cib 70 50 PNP NPN 1 TJ = 25C 10 20 50 100 f, FREQUENCY (kHz) 200 30 0.1 500 1000 PNP NPN 0.2 2 10 20 0.5 1 5 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Small-Signal Current Gain PNP MJF127 20,000 TJ = 150C 3000 2000 25C -55C 500 300 200 0.1 0.2 0.5 0.7 0.3 1 3 2 5 VCE = 4 V 10,000 hFE , DC CURRENT GAIN 10,000 hFE , DC CURRENT GAIN 20,000 VCE = 4 V 1000 100 Figure 7. Typical Capacitance NPN MJF122 5000 50 7 7000 5000 2000 1000 700 500 300 200 0.1 10 TJ = 150C 3000 25C -55C 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 3 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Typical DC Current Gain TJ = 25C 2.6 IC = 2 A 4A 6A 2.2 1.8 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 3 TJ = 25C 2.6 IC = 2 A 6A 4A 2.2 1.8 1.4 1 0.3 IB, BASE CURRENT (mA) 0.5 0.7 1 2 3 5 IB, BASE CURRENT (mA) Figure 9. Typical Collector Saturation Region http://onsemi.com 4 7 10 20 30 MJF122 MJF127 NPN MJF122 PNP MJF127 3 3 TJ = 25C TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 2 1.5 1 0.5 0.1 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4 V 0.5 0.7 1.5 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 1 VCE(sat) @ IC/IB = 250 0.2 0.3 2 2 1 3 5 7 0.5 10 VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 0.7 1 2 3 5 7 10 7 10 IC, COLLECTOR CURRENT (AMP) Figure 10. Typical "On" Voltages +5 +4 V, TEMPERATURE COEFFICIENTS (mV/C) V, TEMPERATURE COEFFICIENT (mVC) +5 *IC/IB hFE 3 +3 25C to 150C +2 - 55C to 25C +1 0 -1 -2 *VC FOR VCE(sat) 25C to 150C -3 -4 -5 0.1 VB FOR VBE 0.2 0.3 0.5 - 55C to 25C 0.7 1 2 3 5 7 10 +4 *IC/IB hFE 3 +3 25C to 150C +2 +1 0 -1 *VC FOR VCE(sat) -2 - 55C to 25C -3 VB FOR VBE -4 -5 0.1 IC, COLLECTOR CURRENT (AMP) - 55C to 25C 25C to 150C 0.2 0.3 0.5 1 2 3 IC, COLLECTOR CURRENT (AMP) 5 Figure 11. Typical Temperature Coefficients 104 105 VCE = 30 V 103 102 FORWARD REVERSE IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 105 TJ = 150C 101 100 100C 25C 10-1 -0.6 - 0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1 FORWARD VCE = 30 V 103 102 TJ = 150C 101 100C 100 10-1 +1.2 +1.4 REVERSE 104 25C +0.6 +0.4 +0.2 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0 -0.2 -0.4 -0.6 -0.8 -1 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 12. Typical Collector Cut-Off Region http://onsemi.com 5 -1.2 -1.4 MJF122 MJF127 NPN MJF122 PNP MJF127 COLLECTOR COLLECTOR BASE BASE 8k 120 8k EMITTER 120 EMITTER Figure 13. Darlington Schematic http://onsemi.com 6 MJF122 MJF127 TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE CLIP MOUNTED FULLY ISOLATED PACKAGE 0.107" MIN LEADS LEADS HEATSINK 0.107" MIN LEADS HEATSINK HEATSINK 0.110" MIN Figure 14. Clip Mounting Position for Isolation Test Number 1 Figure 15. Clip Mounting Position for Isolation Test Number 2 Figure 16. Screw Mounting Position for Isolation Test Number 3 *Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION 4-40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 17. Typical Mounting Techniques* Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 7 MJF122 MJF127 PACKAGE DIMENSIONS CASE 221D-02 TO-220 TYPE ISSUE D -T- -B- F SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S Q U DIM A B C D F G H J K L N Q R S U A 1 2 3 H -Y- K G N L D J R 3 PL 0.25 (0.010) M B M Y INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. 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