MJF122-D - ON Semiconductor

Complementary Power

Darlingtons

For Isolated Package Applications

Designed for general–purpose amplifiers and switching

applications, where the mounting surface of the device is required to

be electrically isolated from the heatsink or chassis.

•Electrically Similar to the Popular TIP122 and TIP127

•100 VCEO(sus)

•5 A Rated Collector Current

•No Isolating Washers Required

•Reduced System Cost

•High DC Current Gain — 2000 (Min) @ IC = 3 Adc

•UL Recognized, File #E69369, to 3500 VRMS Isolation

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎÎ

Value

ÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎÎ

100

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎ

VCB

ÎÎÎÎÎ

100

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎ

5

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

RMS Isolation Voltage (1) Test No. 1 Per Fig. 14

(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 15

TA = 25C) Test No. 3 Per Fig. 16

ÎÎÎ

Î

ÎÎÎ

VISOL

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

4500

3500

1500

ÎÎ

VRM

S

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎ

Î

ÎÎÎ

IC

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

5

8

ÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎ

IB

ÎÎÎÎÎ

0.12

ÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation* @ TC = 25C

Derate above 25C

ÎÎÎ

Î

ÎÎÎ

PD

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

30

0.24

ÎÎ

Watt

s

W/

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25C

Derate above 25C

ÎÎÎ

Î

ÎÎÎ

PD

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

2

0.016

ÎÎ

Watt

s

W/

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎ

Î

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

–65 to

+150

ÎÎ

IC

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case*

ÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

4.1

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Lead Temperature for Soldering Purpose

ÎÎÎÎ

TL

ÎÎÎÎÎÎ

260

ÎÎÎ

C

*Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted

on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.

(1) Proper strike and creepage distance must be provided.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2002

April, 2002 – Rev. 3 1Publication Order Number:

MJF122/D

MJF122

MJF127

COMPLEMENTARY

SILICON

POWER DARLINGTONS

5 AMPERES

100 VOLTS

30 WATTS

NPN

PNP

CASE 221D–02

TO–220 TYPE

1

2

3STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

Î

ÎÎÎ

100

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

ÎÎÎÎÎ

ICEO

ÎÎÎ

—

ÎÎÎÎ

10

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICBO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

10

ÎÎÎ

Î

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎ

—

ÎÎÎÎ

2

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc)

DC Current Gain (IC = 3 Adc, VCE = 3 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎ

Î

ÎÎÎ

1000

2000

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (IC = 3 Adc, IB = 12 mAdc)

Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 20 mAdc)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

—

ÎÎÎÎ

2

3.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (IC = 3 Adc, VCE = 3 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)

ÎÎÎÎÎ

hfe

ÎÎÎ

4

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance MJF127

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJF122

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

Cob

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

300

200

ÎÎÎ

Î

ÎÎÎ

pF

(1) Pulse Test: Pulse Width  300 µs, Duty Cycle  2%.

Figure 1. Switching Times Test Circuit

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

0.1 0.7 100.5

0.3 25

5

IC, COLLECTOR CURRENT (AMP)

td @ VBE(off) = 0 V

t, TIME (s)µ

2

1

0.5

0.2

0.1

0.05

Figure 2. Typical Switching Times

ts

tf

0.3

3

0.2 1

0.07

0.7

37

PNP

NPN

≈120≈8 k

V2

APPROX.

+8 V

V1

APPROX.

-12 V 25 µs

RB

51 D1

+4 V

VCC

-30 V

RCSCOPE

TUT

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

FOR td AND tr, D1 IS DISCONNECTED

AND V2 = 0

FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPES, e.g.,

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

tr

0

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PD, POWER DISSIPATION (WATTS)

0

80

60

40

20

4

3

2

1

TATC

0

Figure 3. Maximum Power Derating

T, TEMPERATURE (°C)

40 60 100 120 16080 140

TC

20

t, TIME (ms)

0.01

0.1 0.5 10 20 50 100 200 500 5K 10

K

152

1

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

SINGLE PULSE

RθJC(t) = r(t) RθJC

TJ(pk) - TC = P(pk) RθJC(t)

RESISTANCE (NORMALIZED)

Figure 4. Thermal Response

0.5

0.3

0.03

0.02

0.2 1K 2K30 3003

0.3 3K

TA

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Maximum Forward Bias

Safe Operating Area

1

10

1

30

CURRENT LIMIT

SECONDARY BREAKDOWN

LIMIT

THERMAL LIMIT @

TC = 25°C (SINGLE PULSE)

IC, COLLECTOR CURRENT (AMPS)

0.1 23 50

3

0.3

10

0.2

d

c

TJ = 150°C1ms

5 ms

100 µs

2

5

0.5

5 10020

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on T J(pk) = 150C; TC is

variable depending on conditions. Secondary breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by secondary breakdown.

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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 6. Typical Small–Signal Current Gain

f, FREQUENCY (kHz)

70

300

hfe, SMALL-SIGNAL CURRENT GAIN

30

200

100

50

TC = 25°C

VCE = 4 Vdc

IC = 3 Adc

Figure 7. Typical Capacitance

10,000

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

Cib

Cob

0.1

200

100

1000

500

300

10

30

100510.5

2000

3000

5000

10 500.2 2 20

TJ = 25°C

IC, COLLECTOR CURRENT (AMP)

NPN

MJF122 PNP

MJF127

Figure 8. Typical DC Current Gain

0.1

IC, COLLECTOR CURRENT (AMP)

200 0.2 0.5

3000

1000

10,000

hFE, DC CURRENT GAIN

VCE = 4 V

TJ = 150°C

5000

0.3 1

25°C

-55°C

2000

0.7 3

20,000

300

500

510

hFE, DC CURRENT GAIN

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.3 0.5 0.7 1025

IC = 2 A 4 A

1

6 A

TJ = 25°C

3

120 30

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

3

1

Figure 9. Typical Collector Saturation Region

PNP

NPN

PNP

NPN

1 100050105 100 5002 20 200

20

50

200

3000

1000

10,000

5000

2000

20,000

300

500

2 7 0.1 0.2 0.50.3 10.7 3 5 10

27

VCE = 4 V

TJ = 150°C

25°C

-55°C

IC = 2 A 4 A 6 A

700

7000

3 7 0.3 0.5 0.7 10251203037

TJ = 25°C

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V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

0.1

NPN

MJF122 PNP

MJF127

10-1

0+0.4 -0.2 -0.4 -0.6+0.6 +0.2 -0.8 -1 -1.2 -1.4

IC, COLLECTOR CURRENT (AMP)

0

*IC/IB ≤ hFE 3

- 5

104

VBE, BASE-EMITTER VOLTAGE (VOLTS)

10-1

0- 0.4

, COLLECTOR CURRENT (A)

µ

IC

103

102

101

100

+0.2 +0.4 +0.6

TJ = 150°C

100°C

REVERSE FORWARD

25°C

VCE = 30 V

105

-0.6 -0.2 +0.8 +1 +1.2 +1.4

104

VBE, BASE-EMITTER VOLTAGE (VOLTS)

, COLLECTOR CURRENT (A)µIC

103

102

101

100

TJ = 150°C

100°C

REVERSE FORWARD

25°C

VCE = 30 V

105

- 4

- 3

- 2

- 1

θVB FOR VBE

25°C to 150°C

*θVC FOR VCE(sat)

IC, COLLECTOR CURRENT (AMP)

Figure 10. Typical “On” Voltages

Figure 11. Typical Temperature Coefficients

0.1

IC, COLLECTOR CURRENT (AMP)

2

1.5

V, VOLTAGE (VOLTS)

3

2.5

1

0.5

0.2 0.5 50.3 10.7 3 10

IC, COLLECTOR CURRENT (AMP)

2

1.5

V, VOLTAGE (VOLTS)

3

2.5

1

0.5

TJ = 25°C

VBE(sat) @ IC/IB = 250

VBE @ VCE = 4 V

TJ = 25°C

VBE(sat) @ IC/IB = 250

VBE @ VCE = 4 V

VCE(sat) @ IC/IB = 250

V, TEMPERATURE COEFFICIENT (mV C)°θ

72 0.1 0.2 0.5 50.3 10.7 3 1072

0.2 0.5 50.3 10.7 3 1072 0.1 0.2 0.5 50.3 1 3 1072

+ 1

+ 2

+ 3

+ 4

+ 5

0

- 5

- 4

- 3

- 2

- 1

+ 1

+ 2

+ 3

+ 4

+ 5

- 55°C to 25°C

*IC/IB ≤ hFE 3

θVB FOR VBE

*θVC FOR VCE(sat)

Figure 12. Typical Collector Cut–Off Region

VCE(sat) @ IC/IB = 250

25°C to 150°C

- 55°C to 25°C

25°C to 150°C

- 55°C to 25°C

25°C to 150°C

- 55°C to 25°C

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BASE

EMITTER

COLLECTOR

≈8 k ≈120

BASE

EMITTER

COLLECTOR

≈8 k ≈120

NPN

MJF122 PNP

MJF127

Figure 13. Darlington Schematic

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MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.110" MIN

Figure 14. Clip Mounting Position

for Isolation Test Number 1

*Measurement made between leads and heatsink with all leads shorted together

CLIP CLIP 0.107" MIN

LEADS

HEATSINK

0.107" MIN

Figure 15. Clip Mounting Position

for Isolation Test Number 2 Figure 16. Screw Mounting Position

for Isolation Test Number 3

MOUNTED

FULLY ISOLATED

PACKAGE

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

TEST CONDITIONS FOR ISOLATION TESTS*

4-40 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw

torque o f 6 t o 8 i n .lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a con-

stant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in .lbs will

cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in .lbs without adversely affecting the pack-

age. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend

exceeding 10 in .lbs of mounting torque under any mounting conditions.

Figure 17. Typical Mounting Techniques*

MOUNTING INFORMATION

**For more information about mounting power semiconductors see Application Note AN1040.

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PACKAGE DIMENSIONS

CASE 221D–02

TO–220 TYPE

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

DIM

A

MIN MAX MIN MAX

MILLIMETERS

0.621 0.629 15.78 15.97

INCHES

B0.394 0.402 10.01 10.21

C0.181 0.189 4.60 4.80

D0.026 0.034 0.67 0.86

F0.121 0.129 3.08 3.27

G0.100 BSC 2.54 BSC

H0.123 0.129 3.13 3.27

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.14 1.52

N0.200 BSC 5.08 BSC

Q0.126 0.134 3.21 3.40

R0.107 0.111 2.72 2.81

S0.096 0.104 2.44 2.64

U0.259 0.267 6.58 6.78

–B–

–Y–

G

N

DL

KH

A

F

Q

3 PL

123

M

B

M

0.25 (0.010) Y

SEATING

PLANE

–T–

U

CS

JR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make

changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death

may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

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For additional information, please contact your local

Sales Representative.

MJF122/D

Literature Fulfillment:

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