SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – MARCH 1996 ✪
PARTMARKIN G DETAI L – SS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 50 V
Continuous Drain Current at Tamb=25°C ID200 mA
Pulsed Drain Current IDM 800 mA
Gate-Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 360 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage BVDSS 50 V ID=0.25mA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) 0.5 1.5 V ID=1mA, VDS= VGS
Gate-Body Leakage IGSS 100 nA VGS=± 20V, VDS=0V
Zero Gate Voltage
Drain Current IDSS 0.5
5
100
µA
µA
nA
VDS=50V, VGS=0
VDS=50V, VGS=0V, T=125°C(2)
VDS=20V, VGS=0
Static Drain-Source
On-State Resistance (1) RDS(on) 3.5 ΩVGS=5V,ID=200mA
Forward
Transconductance(1)(2) gfs 120 mS VDS=25V,ID=200mA
Input Capacitance (2) Ciss 50 pF
VDS=25V, VGS=0V, f=1MHz
Common Source
Output Capacitance (2) Coss 25 pF
Reverse Transfer
Capacitance (2) Crss 8pF
Turn-On Delay Time (2)(3) td(on) 10 ns
VDD ≈30V, ID=280mA
Rise Time (2)(3) tr10 ns
Turn-Off Delay Time (2)(3) td(off) 15 ns
Fall Time (2)(3) tf25 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
BSS138
D
G
S
SOT23
3 - 72
0
0.8
1.2
1.6
T-Temp er atur e ( °C)
Normalised RDS(on) And VGS(th)
0
RDS(on) AT
VGS(th) AT
1.0
1.0
10
0.1
ID-Drain Current (Amperes)
RDS(on) - Drain Source
On Resistance (Ohms)
0.01
100
ID-Drain Current (Amperes)
0
100
200
300
400
500
gfs -Forward Transconductance (mS)
0 0.2 0.4 0.6 0.8 1.0 0 2 4
0
100
200
300
400
500
gfs -Forwa rd Transcondu ctance (mS)
VGS -Gate Source Voltage (Volts)
1 10 1000.1
100
VDS -Drain Source Voltage (Volts)
C-Capacitance (pF)
NOTE:-VGS =0V
Ciss
Coss
Crss
Typical On Resistance vs.
Drain Current
6810
012345
0
0.2
0.4
0.6
0.8
1.0
VDS -Drain Source Voltage (Volts)
IDS -Drain Source Current (A)
Saturation Characteristics
Ty pical Transconductance vs.
Drain Current Ty pical Transconductance vs.
Gate - Source Volt age
Typical Capacitance vs.
Drain - Source Voltage Norm alise d RDS(on) And VGS(th)
vs. Temperature
VGS =10V 5V 4.5V
4V
3.5V
3V
2.5V
2V
3V 3.5V
5V
4V
7V
10V
VGS =2.5V
VDS =25V
80µs Pulsed Test
VDS =25V
80µs Pulsed Test
Ciss
Coss
Crss
VGS =5V
0.6
1.0
1.4
1.8
-40 40 80 120 160
1
10
80µs Pulsed Test
F=1MHz ID=200mA
ID=1mA
VDS=VGS
TYPICAL CHARACTERISTICS
0
0
2
4
6
8
10
12
14
Q-Charge (nC)
VGS -Gate-Source Voltage (Volts)
V
DD
=20V
012345
0
0.2
0.4
0.6
0.8
1.0
100µA1mA 10mA 100mA 1A
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IDS - Drain Source Current
VSD - Source Drain Vo ltage (V)
VGS - Gate Source Vol tage (V)
IDS - Drain Source Current (A)
Typical Diode Forward Voltage
Ty pical Transfer CharacteristicsTypical Gate Charge vs.
Gate-Source Voltage
30V
50V
ID=200mA
80µs Pulsed Test
VDS =10V
80µs Pulsed Test
VGS =0
0.2 0.4 0.6 0.8 1.0 1.2
TYPICAL CHARACTERISTICS
BSS138 BSS138
3 - 73 3 - 74
0
0.8
1.2
1.6
T-Temp er atur e ( °C)
Normalised RDS(on) And VGS(th)
0
RDS(on) AT
VGS(th) AT
1.0
1.0
10
0.1
ID-Drain Current (Amperes)
RDS(on) - Drain Source
On Resistance (Ohms)
0.01
100
ID-Drain Current (Amperes)
0
100
200
300
400
500
gfs -Forward Transconductance (mS)
0 0.2 0.4 0.6 0.8 1.0 0 2 4
0
100
200
300
400
500
gfs -Forwa rd Transcondu ctance (mS)
VGS -Gate Source Voltage (Volts)
1 10 1000.1
100
VDS -Drain Source Voltage (Volts)
C-Capacitance (pF)
NOTE:-VGS =0V
Ciss
Coss
Crss
Typical On Resistance vs.
Drain Current
6810
012345
0
0.2
0.4
0.6
0.8
1.0
VDS -Drain Source Voltage (Volts)
IDS -Drain Source Current (A)
Saturation Characteristics
Ty pical Transconductance vs.
Drain Current Ty pical Transconductance vs.
Gate - Source Volt age
Typical Capacitance vs.
Drain - Source Voltage Norm alise d RDS(on) And VGS(th)
vs. Temperature
VGS =10V 5V 4.5V
4V
3.5V
3V
2.5V
2V
3V 3.5V
5V
4V
7V
10V
VGS =2.5V
VDS =25V
80µs Pulsed Test
VDS =25V
80µs Pulsed Test
Ciss
Coss
Crss
VGS =5V
0.6
1.0
1.4
1.8
-40 40 80 120 160
1
10
80µs Pulsed Test
F=1MHz ID=200mA
ID=1mA
VDS=VGS
TYPICAL CHARACTERISTICS
0
0
2
4
6
8
10
12
14
Q-Charge (nC)
VGS -Gate-Source Voltage (Volts)
V
DD
=20V
012345
0
0.2
0.4
0.6
0.8
1.0
100µA1mA 10mA 100mA 1A
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IDS - Drain Source Current
VSD - Source Drain Vo ltage (V)
VGS - Gate Source Vol tage (V)
IDS - Drain Source Current (A)
Typical Diode Forward Voltage
Ty pical Transfer CharacteristicsTypical Gate Charge vs.
Gate-Source Voltage
30V
50V
ID=200mA
80µs Pulsed Test
VDS =10V
80µs Pulsed Test
VGS =0
0.2 0.4 0.6 0.8 1.0 1.2
TYPICAL CHARACTERISTICS
BSS138 BSS138
3 - 73 3 - 74
