PD - 94976 IRF730APbF SMPS MOSFET HEXFET(R) Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN1001) VDSS Rds(on) max ID 400V 1.0 5.5A TO-220AB G DS Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw 5.5 3.5 22 74 0.6 30 4.6 -55 to + 150 Units A W W/C V V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Typical SMPS Topologies: l l Single Transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset (Both US Line input only). www.irf.com 1 02/03/04 IRF730APbF Static @ TJ = 25C (unless otherwise specified) Parameter Min. Drain-to-Source Breakdown Voltage 400 V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- RDS(on) Static Drain-to-Source On-Resistance --- VGS(th) Gate Threshold Voltage 2.0 --- IDSS Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- IGSS Gate-to-Source Reverse Leakage --- V(BR)DSS Typ. --- 0.5 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 1.0 VGS = 10V, ID = 3.3A 4.5 V VDS = VGS, ID = 250A 25 VDS = 400V, VGS = 0V A 250 VDS = 320V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 3.1 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 10 22 20 16 600 103 4.0 890 30 45 Max. Units Conditions --- S VDS = 50V, ID = 3.3A 22 ID = 3.5A 5.8 nC VDS = 320V 9.3 VGS = 10V, See Fig. 6 and 13 --- VDD = 200V --- I D = 3.5A ns --- RG = 12 --- R D = 57,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 320V, = 1.0MHz --- VGS = 0V, VDS = 0V to 320V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 290 5.5 7.4 mJ A mJ Typ. Max. Units --- 0.50 --- 1.70 --- 62 C/W 62 Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Diode Characteristics IS I SM VSD t rr Q rr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 5.5 showing the A G integral reverse --- --- 22 S p-n junction diode. --- --- 1.6 V TJ = 25C, IS = 5.5A, VGS = 0V --- 370 550 ns TJ = 25C, IF = 3.5A --- 1.6 2.4 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF730APbF 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 1 0.1 4.5V 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 10 1 4.5V 0.1 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 C TJ = 25 C V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 0.1 4.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20s PULSE WIDTH TJ = 150 C 0.01 0.1 100 VDS , Drain-to-Source Voltage (V) 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 5.9A ID = 5.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF730APbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd C, Capacitance(pF) 10000 Coss = Cds + Cgd 1000 Ciss Coss 100 10 Crss 20 VGS , Gate-to-Source Voltage (V) 100000 ID =5.5 5.9A 16 VDS = 320V VDS = 200V VDS = 80V 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 1 1 10 100 1000 0 VDS, Drain-to-Source Voltage (V) 5 10 15 20 25 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 10 TJ = 150 C TJ = 25 C 1 0.1 0.4 I D , Drain Current (A) ISD , Reverse Drain Current (A) 0 V GS = 0 V 0.6 0.8 1.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 100us 1ms 1 10ms 0.1 1.2 TC = 25 C TJ = 150 C Single Pulse 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF730APbF 6.0 V GS 5.0 ID , Drain Current (A) RD V DS D.U.T. RG + -V DD 4.0 10V 3.0 Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 0.02 0.01 0.01 0.00001 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF730APbF 700 DRIVER L VDS D.U.T RG + V - DD IAS 20V EAS , Single Pulse Avalanche Energy (mJ) 15V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp TOP 600 BOTTOM ID 2.5A 3.5A 5.5A 500 400 300 200 100 0 25 I AS 50 75 100 125 Starting TJ , Junction Temperature ( C) 150 Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 610 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS V DSav , Avalanche Voltage ( V ) 10 V 600 590 580 570 560 550 VGS 540 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 0.0 1.0 2.0 3.0 4.0 5.0 6.0 Fig 12d.IAV Typical Drain-to-Source , Avalanche Current ( A) Voltage Vs. Avalanche Current www.irf.com IRF730APbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - V DD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRF730APbF TO-220AB Package Outline 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) - B - 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) L E A D A S S IG N M E N T S 1.15 (.045) MIN 1 2 3 4- C O LLE C TO R 4 - D R A IN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 3X LEAD ASSIGNMENTS IG B T s , C o P A C K 1 - GATE 1- GATE 1 - G A T2E- DRAIN - SOURCE 2 - C O L L E C T O R 2 - D R A3I N 3 - E M IT T E R 3 - S O U4R- CDRAIN E HEXFET 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAM P L E : T H L O AS IN IS I S A N IR F 1 0 1 0 T CO D E 1789 S E M B L E D O N W W 19, 1997 T H E A S S E M B L Y L IN E "C " N o t e : " P " i n a s s e m b l y li n e p o s i t i o n in d ic a t e s " L e a d - F r e e " IN T E R N A T I O N A L R E C T I F IE R L O G O AS S E M B L Y L O T C O D E P AR T N U M B E R D AT E C O D E YE AR 7 = 1997 W E E K 19 L IN E C Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. Starting TJ = 25C, L = 19mH Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. ( See fig. 11 ) RG = 25, IAS = 5.5A. (See Figure 12) as Coss while VDS is rising from 0 to 80% VDSS ISD 5.5A, di/dt 90A/s, VDD V(BR)DSS, TJ 150C Data and specifications subject to change without notice. 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