INSTR fOPTO} be DE jate1 724 003b4e4 3 f 8961726 TEXAS INSTR (OPTO) ~~ . 62C 36824 D ! Soe TIP47, TIP48, TIP49, TIP5O N-P-N SILICON POWER TRANSISTORS REVISED OCTOBER 1984 40 W at 25C Case Temperature . [ 7 3 3 ~// 1 A Continuous Collector Current . Te 2 A Peak Collector Current Minimum 10 MHz f; at 10 V,0.2A 20 mJ Reverse-Energy Rating - 250 V to 400 V Minimum V(BR)CEO Designed for Industrial and Consumer Applications Designed for High Voltage, High Forward, and Reverse Energy Applications device schematic T0-220AB PACKAGE CT omy EMITTER COLLECTOR BASE L-... jd THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted} TIP47 TIP48 TIP49 TIPSO current current current areas at case temperature at case temperature (see at temperature energy storage temperature range mm case 2 > a a a - NOTES: 1. This value applies for ty < 1 ms, duty cycle < 10 %. 2. For operation above 25C case temperature, refer to Dissipation Derating Curve, Figure 8. 3. For operation above 25C free-air temperature, refer to Dissipation Derating Curve, Figura 9. 4. This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2, L = 20 mH, Rapa = 1008, Vege = OV.Rs = 0.12, Vcc = 20V. Energy = ie 2L/2. wy TEXAS 5-83 INSTRUMENTS POST OFFICE 80X 225012 @ DALLAS, TEXAS 75265 ' ,TEXAS INSTR {OPTO? be DE Jaru1726 oo3b8e25 5 a 8961726 TEXAS INSTR COPTO) oo 62c 36825 D | TIP47, TIP48, TIP49, TIP50 T-33-// N-P-N SILICON POWER TRANSISTORS I ' electrical characteristics at 25C case temperature o 6 + ~ | PARAMETER TEST CONDITIONS mPa? TiP4s P49 TIPEO UNIT MIN TYP MAX | MIN TYP MAX | MIN TYP MAX | MIN TYP MAX Ic = 30m, Ig = 0, - VIBRICEO See Note 5 260 300 360 400 v Vce=150V, ig =0 1 Vce= 200V, Ig=0 5 | mA : CEO Vee = 280V. Ip = 0 7 - Voce =300V, Ip =O 1 Voce = 350V, Vee =0 1 Vce =400V, Var =0 1 i CES Voce = 480V, Vpp = 0 7 mA Vce= S00V, Vgr=0 . 1 leBo Veg = OV, ic = 0 1 1 1 1 mA Vce = 10V, ic = 0.34, See Notes 5 and6 30 150 | 30 150 | 30 150 | 30 160 : hFE | Voe=10V, Ic= 1A, | ao 10 10 10 See Notes 5 and 6 | Vce=10V, Ic =1A, | VBE See Notes 5 and 6 1.5 1.6 1.6 16 v . : Ig =0.2A, Ic=TA, v . 15 | V CEtsat) See Notes 6 and 8 15 1.8 1.6 hfe Voce = 10V, ig =O.2A,] 96 25 25 5 f= 1kHz Ihfgl Vce=10V, Ic O24) 5 5 5 5 \ f = 2MHz i NOTES: 5. These parameters must be measured using pulse techniques, ty = 300 ys, duty cycle < 2%. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within 3,2 mm (0. 126 inch) from the device body. resistive-load switching characteristic at 25C case temperature PARAMETER TEST CONDITIONST MIN TYP MAX | UNIT ton fc = 1A, Ip1 = 100mA, ipo = 100mA, 0.2 > toff Vec(ofty = 5V. Ri = 2002, See Figure 1 3 # | t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. vu oO @ < ae oO @ a 1 ~ TEXAS ae 1180 5-84 INSTRUMENTS | POST OFFICE 80X 225012 DALLAS, TEXAS 75265TEXAS INSTR LOPTO} 8861726 TEXAS INSTR COPTO) weet fe we 0 Baa Te be DE Jecuu7a. OO3baek ? i 62C 36826 D ____TIP47, TIP48, TIP49, TIP50 N-P-N SILICON POWER TRANSISTORS Ti33"I/ PARAMETER MEASUREMENT INFORMATION INPUT MONITOR OUTPUT \ t . MONITOR 1NO14 Age 3262 1 - AMA 14141 2N6127 | 56 2 1N514 1N914 = 1N914 | JK 270 pF Rage =66 2 RL = 2002 Vi . . > LY) veen 3022 Vep25V = . . = Vee = 200 V Vapi = 9V _ ce ADJUST FOR i Von = 8V AT I INPUT MONITOR moo ( ! 1 t t ! . >| <r toff ! ! 10% OUTPUT i * MONITOR 30% ' : VOLTAGE WAVEFORMS NOTES: A. Vgenis a 30-V pulse into a 50 Q termination. B. The Vgen waveform is supplied by a generator with tha follawing characteristics: tS 15ns, te< 15 ns, Zoyt = GOR, tw = 20s, duty cycle < 2%, Waveforms are monitored on an oscilloscope with the following characteristics: tr < 18 ns, Rin = 10 MQ, Cin < 11.5 pF. . Resistors must be noninductive types. - - The d-c power supplies may require additional bypassing in order to minimize ringing. TEST CIRCUIT OP evan 90% - INPUT OV gee ~ SS T0% MONITOR 5V : 2 > o a a. = FIGURE 1. RESISTIVE-LOAD SWITCHING 1283 wy EXAS 5-85 INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265TEXAS INSTR LOPTOF be DE Peei7e. OO3bee? 4 IT . 8967726 TEXAS INSTR COPTO) - : ; 62C 36827 D f TIP47, TIP48, TIP49, TIPO 7T-33-// N-P-N SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION Vce MONITOR 2N6127 INPUT AAR 160 0 502 3 Reg2 = 1002 Ig MONITOR Vep1=10V T - oP TEST CIRCUIT ~*~ ae (eee Note A) input 2m . | VOLTAGE 5V j it | so | 100 o| 1 if 1 WAL wd i COLLECTOR I CURRENT i i i = r | 7 to i it ! 1 9 ViBRIcER L_-_u 4 1. S. COLLECTOR \ i @ VOLTAGE t t a | 1 20V VeElsat) ewer ee me bm VOLTAGE AND CURRENT WAVEFORMS : | NOTE A: Input pulse duration is increased until Icpq = 1.44. ' FIGURE 2. INDUCTIVE-LOAD SWITCHING 5-86 TEXAS 4 1283 | . INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS. TEXAS 75265 > aTEXAS INSTR {LOPTO} | go61726 TEXAS INSTR (OPTO) oo. e2c 36828 | 1283 hfeStatic Forward Current Transfer Ratio be DE anbi72. 003b4248 Qo i anna I rt = | a, TIP47, TIP48, TIP49, TIP5O N-P-N SILICON POWER TRANSISTORS T-3B3-/). TYPICAL CHARACTERISTICS STATIC FORWARD CURRENT TRANSFER RATIO BASE-EMITTER VOLTAGE , vs vs COLLECTOR CURRENT COLLECTOR CURRENT cet IOV 1.0 Te=25C _ VcE= 10V See Notes 5 and 6 > os Tce =25 C 80 4 See Notes 5 and 6 s 60 > 06 . ao & 40 @ 0.4 . so ' 7 i w ! 20 2 0.2 : t 0 0 0.01 0.04 0.1 0.4 1 0.01 0.04 0.1 0.4 1 ICollector Current-A IcCollector CurrentA FIGURE 3 FIGURE 4 COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT > 8 fic. S IB 5 Tc = 25C E See Notes 5 =a B a S o 5 Gi _o a 2 o. $ = & ut o > 0.01 004 O01 . 04 1 iCollector CurrentA FIGURE 5 NOTES: 5. These parameters must be measured using pulse techniques, ty = 300 us, duty cycle < 2%. 6. These parameters are measured with voltage-sensing contacts p: from the current-carrying c and t. d within 3,2 mm (0.1285 inch) from the device body. T Xp . | EXAS 5-87 NSTRUMENTS POST OFFICE SOX 225012 DALLAS, TEXAS 75265Caen renner eee eee eee eee ee TEXAS INSTR COPTO} be DE Bstb172, cosnaes 2 I SS61726 TEXAS INSTR COPTO) 62 36829. Dd | TIP47, T1P48, TIP49, TIP5O 7-33-1) N-P-N SILICON POWER TRANSISTORS - mola a ole > 7 : MAXIMUM SAFE OPERATING AREA MAXIMUM COLLECTOR CURRENT / MAXIMUM COLLECTOR CURRENT vs vs COLLECTOR-EMITTER VOLTAGE UNCLAMPED INDUCTIVE LOAD Vec=20V Agp2 = 100 To = 28C See Figure 2 Ie-Maximum Collector Current--A i~-Maximum Collector CurrentA 1 4 10 40 100 400 1000 4 10 40 100 VeceECollector-Emitter VoltageV LUnclamped Inductive LoadmH FIGURE 6 FIGURE 7 NOTES: 7. This combination of maximum voltage and current may be achieved only when switching from saturation to cutoff with a clamped inductive load. : | 8, Above this point the safe operating area has not been defined. THERMAL INFORMATION CASE TEMPERATURE FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE DISSIPATION DERATING CURVE 3 Bi NS o = u Oo > So K Resa < 62.5 CW VA S3DIAO L N | J S a o Py+Maximum Continuous Device DissipationW Py7Maximum Continuous Device DissipationW > o 25 60 75 100 126 150 0 25 60 75 #100 125 = 150 TcCase TemperaturaC TaFree-Air Temperature"C FIGURE 8 FIGURE 9 ' TEXAS + . 1283 INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265 o 5-88 oo