2008-02-11Rev. 2.4 Page 1
SPW11N60S5
Cool MOS™ Power Transistor VDS 600 V
RDS(on) 0.38 Ω
ID11 A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dtrated
• Ultra low effective capacitances
• Improved transconductance
PG-TO247
Type Package Ordering Code
SPW11N60S5 PG-TO247 Q67040-S4239
Marking
11N60S5
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
11
7
A
Pulsed drain current, t
p
limited by T
j
ma
x
ID
p
uls 22
Avalanche energy, single pulse
ID = 5.5 A, VDD = 50 V
EAS 340 mJ
Avalanche energy, repetitive tAR limited by Tjmax1
)
ID = 11 A, VDD = 50 V
EAR 0.6
Avalanche current, repetitive t
AR
limited by T
j
ma
x
I
AR
11 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 125 W
Operating and storage temperature T
j
,Tst
g
-55... +150 °C
Please note the new package dimensions arccording to PCN 2009-134-A
http://store.iiic.cc/
2008-02-11Rev. 2.4 Page 2
SPW11N60S5
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
dv/dt20 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1 K/W
Thermal resistance, junction - ambient, leaded RthJA --62
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s
Tsold - - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=11A - 700 -
Gate threshold voltage VGS(th) ID=500µΑ,VGS=VDS 3.5 4.5 5.5
Zero gate voltage drain current IDSS VDS=600V, VGS=0V,
Tj=25°C,
Tj=150°C
-
-
-
-
25
250
µA
Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=7A,
Tj=25°C
Tj=150°C
-
-
0.34
0.92
0.38
-
Ω
Gate input resistance RGf=1MHz, open Drain - 29 -
Please note the new package dimensions arccording to PCN 2009-134-A
http://store.iiic.cc/
2008-02-11Rev. 2.4 Page 3
SPW11N60S5
Electrical Characteristics , at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=7A
- 6 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 1460 - pF
Output capacitance Coss - 610 -
Reverse transfer capacitance Crss - 21 -
Effective output capacitance,2)
energy related
Co(er) VGS=0V,
VDS=0V to 480V
- 45 - pF
Effective output capacitance,3)
time related
Co(tr) - 85 -
Turn-on delay time td(on) VDD=350V, VGS=0/10V,
ID=11A, RG=6.8Ω
- 130 - ns
Rise time tr- 35 -
Turn-off delay time td(off) - 150 225
Fall time tf- 20 30
Gate Charge Characteristics
Gate to source charge Qgs VDD=350V, ID=11A - 10.5 - nC
Gate to drain charge Qgd - 24 -
Gate charge total QgVDD=350V, ID=11A,
VGS=0 to 10V
- 41.5 54
Gate plateau voltage V(plateau) VDD=350V, ID=11A - 8 - V
1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Please note the new package dimensions arccording to PCN 2009-134-A
http://store.iiic.cc/
2008-02-11Rev. 2.4 Page 4
SPW11N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous
forward current
ISTC=25°C - - 11 A
Inverse diode direct current,
pulsed
ISM - - 22
Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V
Reverse recovery time trr VR=350V, IF=IS ,
diF/dt=100A/µs
- 650 1105 ns
Reverse recovery charge Qrr - 7.9 - µC
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
Rth1 0.015 K/W
Rth2 0.03
Rth3 0.056
Rth4 0.197
Rth5 0.216
Rth6 0.083
Thermal capacitance
Cth1 0.0001878 Ws/K
Cth2 0.0007106
Cth3 0.000988
Cth4 0.002791
Cth5 0.007285
Cth6 0.063
External Heatsink
TjTcase
Tamb
Cth1 Cth2
Rth1 Rth,n
Cth,n
Ptot (t)
Please note the new package dimensions arccording to PCN 2009-134-A
http://store.iiic.cc/
2008-02-11Rev. 2.4 Page 5
SPW11N60S5
1 Power dissipation
Ptot = f(TC)
0 20 40 60 80 100 120 °C 160
TC
0
10
20
30
40
50
60
70
80
90
100
110
120
W
140
SPW11N60S5
Ptot
2 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TC=25°C
10 010 110 210 3
V
VDS
-2
10
-1
10
0
10
1
10
2
10
A
ID
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Transient thermal impedance
ZthJC = f(tp)
parameter: D=tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -1
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
ZthJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
4 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp= 10 µs, VGS
0 5 10 15 VDS 25
V
0
5
10
15
20
25
A
35
ID
6V
7V
8V
9V
20V
12V
10V
Please note the new package dimensions arccording to PCN 2009-134-A
http://store.iiic.cc/
2008-02-11Rev. 2.4 Page 6
SPW11N60S5
5 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp= 10 µs, VGS
0 5 10 15 V 25
VDS
0
2
4
6
8
10
12
14
A
18
ID
6V
7V
8V
9V
20V
12V
10V
6 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
0 2 4 6 8 10 12 14 A18
ID
0
0.5
1
mΩ
2
RDS(on)
20V
12V
10V
9V
8V
7V
6V
7 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = 7 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Ω
2.1 SPW11N60S5
RDS(on)
typ
98%
8 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0 4 8 12 V 20
VGS
0
4
8
12
16
20
24
A
32
ID
25 °C
150 °C
Please note the new package dimensions arccording to PCN 2009-134-A
http://store.iiic.cc/
2008-02-11Rev. 2.4 Page 7
SPW11N60S5
9 Typ. gate charge
VGS =f (QGate)
parameter: ID = 11 A pulsed
0 10 20 30 40 50 nC 65
QGate
0
2
4
6
8
10
12
V
16 SPW11N60S5
VGS
0.2 VDS max
0.8 VDS max
10 Forward characteristics of body diode
IF = f (VSD)
parameter: T
, tp= 10 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-1
10
0
10
1
10
2
10
A
SPW11N60S5
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
11 Avalanche SOA
IAR = f (tAR)
par.: Tj≤ 150 °C
10 -3 10 -2 10 -1 10 010 110 210 4
µs
tAR
0
1
2
3
4
5
6
7
8
9
A
11
IAR
Tj(START)=125°C
Tj(START)=25°C
12 Avalanche energy
EAS = f(Tj)
par.: ID = 5.5 A, VDD = 50 V
20 40 60 80 100 120 °C 160
Tj
0
50
100
150
200
250
mJ
350
EAS
Please note the new package dimensions arccording to PCN 2009-134-A
http://store.iiic.cc/
2008-02-11Rev. 2.4 Page 8
SPW11N60S5
13 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
540
560
580
600
620
640
660
680
V
720
SPW11N60S5
V(BR)DSS
14 Avalanche power losses
PAR = f (f )
parameter: EAR=0.6mJ
10 410 510 6
Hz
f
0
50
100
150
200
W
300
PAR
15 Typ. capacitances
C = f(VDS)
parameter: VGS=0V, f=1 MHz
0 100 200 300 400 V 600
VDS
0
10
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
16 Typ. Coss stored energy
Eoss=f(VDS)
0 100 200 300 400 V 600
VDS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
µJ
7.5
Eoss
Please note the new package dimensions arccording to PCN 2009-134-A
http://store.iiic.cc/
2008-02-11Rev. 2.4 Page 9
SPW11N60S5
Definition of diodes switching characteristics
Please note the new package dimensions arccording to PCN 2009-134-A
http://store.iiic.cc/
8211
Rev. 2.4 PDJH
63:116S5
3G72
Please note the new package dimensions arccording to PCN 2009-134-A
http://store.iiic.cc/
2008-02-11Rev. 2.4 Page 11
63:116S5
Please note the new package dimensions arccording to PCN 2009-134-A
http://store.iiic.cc/
Data sheet erratum
PCN 2009-134-A
New package outlines TO-247
Final Data Sheet Erratum Rev. 2.0, 2010-02-01
1New package outlines TO-247
Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)
Figure 1 Outlines TO-247, dimensions in mm/inches
http://store.iiic.cc/