2SA1020 Preferred Device One Watt High Current PNP Transistor Features * Pb-Free Packages are Available* http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCE 50 Vdc Collector -Base Voltage VCB 50 Vdc Emitter -Base Voltage VEB 5.0 Vdc Collector Current - Continuous IC 2.0 Adc Total Power Dissipation @ TA = 25C Derate above 25C PD 900 5.0 mW mW/C Total Power Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 125 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Operating and Storage Junction Temperature Range VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS COLLECTOR 2 3 BASE PNP 1 EMITTER THERMAL CHARACTERISTICS Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO-92 (TO-226) CASE 29-10 STYLE 14 1 2 3 MARKING DIAGRAM 2SA 1020 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 May, 2006 - Rev. 3 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: 2SA1020/D 2SA1020 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 50 - - 1.0 - 1.0 70 40 240 - - 0.5 Unit OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) V(BR)CEO Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5.0 V, IC = 0) IEBO Vdc mAdc mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 500 mA, VCE = 2.0 V) (IC = 1.5 A, VCE = 2.0 V) hFE - Collector -Emitter Saturation Voltage (IC = 1.0 A, IB = 50 mA) VCE(sat) Vdc Base -Emitter Saturation Voltage (IC = 1.0 A, IB = 50 mA) VBE(sat) - 1.2 Vdc fT 100 - MHz SMALL- SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (Note 3) (IC = 500 mAdc, VCE = 2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. 3. fT is defined as the frequency at which |hfe| extrapolates to unity. ORDERING INFORMATION Device 2SA1020 2SA1020G 2SA1020RLRA 2SA1020RLRAG Package Shipping TO-92 TO-92 (Pb-Free) 5000 Units / Box TO-92 TO-92 (Pb-Free) 2000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 2SA1020 250 VCE = -2.0 V 200 175 25C 150 125 100 -1.8 V, VOLTAGE (VOLTS) hFE, DC CURRENT GAIN -2.0 TJ = 125C 225 -55C 75 -1.6 -1.4 -1.2 -0.8 VBE(on) @ VCE = 2.0 V -0.6 50 -0.4 25 -0.2 0 -10 -20 VBE(sat) @ IC/IB = 10 -1.0 VCE(sat) @ IC/IB = 10 0 -50 -100 -200 -500 -1.0 A -2.0 A -4.0 A IC, COLLECTOR CURRENT (mA) -50 Figure 2. On Voltages -1.0 -10 -0.9 -0.8 TJ = 25C -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 IC = -500 mA IC = -2.0 A IC = -10 mA IC = -100 mA IC, COLLECTOR CURRENT (A) VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Typical DC Current Gain -100 -200 -500 -1.0 A -2.0 A -4.0 A IC, COLLECTOR CURRENT (mA) -4.0 100 ms -2.0 1.0 ms -1.0 -0.5 -0.2 -0.1 -0.05 -0.02 TA = 25C TC = 25C WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -0.01 0 -1.0 -2.0 -5.0 -10 -20 -50 -100 -0.05-0.1-0.2 -0.5-1.0-2.0 -5.0-10 -20 -50 -100-200 -500 IB, BASE CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Safe Operating Area Figure 3. Collector Saturation Region http://onsemi.com 3 2SA1020 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-10 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. A B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R D G H J R 1 2 3 N C SECTION X-X N INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 3.43 --- STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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