CY62148ESL MoBL
®
4-Mbit (512K x 8) Static RAM
Cypress Semiconductor Corporation • 198 Champion Court • San Jose
,
CA 95134-1709 • 408-943-2600
Document #: 001-50045 Rev. ** Revised January 21, 2009
Features
■
Very high speed: 55 ns
■
Wide voltage range: 2.2V to 3.6V
and 4.5V to 5.5V
■
Ultra low standby power
❐
Typical standby current: 1 μA
❐
Maximum standby current: 7 μA
■
Ultra low active power
❐
Typical active current: 2 mA at f = 1 MHz
■
Easy memory expansion with CE and OE features
■
Automatic power down when deselected
■
CMOS for optimum speed and power
■
Available in Pb-free 32-pin STSOP package
Functional Description
The CY62148ESL is a high performance CMOS static RAM
organized as 512K words by 8 bits. This device features
advanced circuit d esign to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL
®
) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that sig nificantly reduces power
consumption. Placing the device into standby mode reduces
power consumption by mo re than 99 percent when deselected
(CE HIGH). The eight input and output pins (IO
0
through IO
7
) are
placed in a high impedance state when the device is deselected
(CE HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW and WE LOW).
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. Data on the eight IO pins (IO
0
through IO
7
) is
then written into the location specified on the address pins (A
0
through A
18
).
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under
these conditions, the contents of the memory location spe cified
by the address pins appear on the IO pins.
For best practice recommendations, refer to the Cypress
application note AN1064, SRAM System Guidel ines.
A0IO0
IO7
IO1
IO2
IO3
IO4
IO5
IO6
A1
A2
A3
A4
A5
A6
A7
A8
A9
SENSE AMPS
POWER
DOWN
CE
WE
OE
A13
A14
A15
A16
A17
ROW DECODER
COLUMN DECODER
512K x 8
ARRAY
INPUT BUFFER
A10
A11
A12
A18
Logic Block Diagram
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CY62148ESL MoBL
®
Document #: 001-50045 Rev. ** Page 2 of 10
Pin Configuration
Figure 1. 32-Pin STSOP (Top View)
Product Portfolio
Product Range V
CC
Range (V)
[1]
Speed
(ns)
Power Dissipation
Operating I
CC
, (mA) Standby, I
SB2
(μA)
f = 1 MHz f = f
max
Typ
[2]
Max Typ
[2]
Max Typ
[2]
Max
CY62148ESL Industrial 2.2V to 3.6V and 4.5V to 5.5V 55 2 2.5 15 20 1 7
25
26
27
28
29
30
31
32
1
2
3
4
5
6
7
8
A
11
A
9
A
8
A
13
A
17
A
15
A
18
A
16
A
14
A
12
A
7
A
6
A
5
A
4
WE
V
CC
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
9
A0
A1
A2
A3
A10
OE
CE1
IO0
IO1
IO2
IO3
IO4
IO5
IO6
IO7
GND
STSOP
Top View
(not to scale)
Notes
1. Data sheet specifications are not guaranteed for V
CC
in the range of 3.6V to 4.5V.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25°C.
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®
Document #: 001-50045 Rev. ** Page 3 of 10
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature.................................. –65°C to +150°C
Ambient Temperature with
Power Applied .............................................. 55°C to +125°C
Supply Voltage to Ground
Potential ...................................... ... .............. ... .–0.5V to 6.0V
DC Voltage Applied to Outputs
in High-Z State
[3, 4]
..........................................–0.5V to 6.0V
DC Input Voltage
[3, 4]
.......................................–0.5V to 6.0V
Output Current into Outputs (LOW)............. ................20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch Up Current....................................................> 200 mA
Operating Range
Device Range Ambient
Temperature V
CC[5]
CY62148ESL Industrial –40°C to +85°C 2.2V to 3.6V,
and
4.5V to 5.5V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
55 ns
UnitMin Typ
[2]
Max
V
OH
Output HIGH Voltage 2.2 < V
CC
< 2.7 I
OH
= –0.1 mA 2.0 V
2.7 < V
CC
< 3.6 I
OH
= –1.0 mA 2.4
4.5 < V
CC
< 5.5 I
OH
= –1.0 mA 2.4
V
OL
Output LOW Voltage 2.2 < V
CC
< 2.7 I
OL
= 0.1 mA 0.4 V
2.7 < V
CC
< 3.6 I
OL
= 2.1 mA 0.4
4.5 < V
CC
< 5.5 I
OL
= 2.1 mA 0.4
V
IH
Input HIGH Voltage 2.2 < V
CC
< 2.7 1.8 V
CC
+ 0.3 V
2.7 < V
CC
< 3.6 2.2 V
CC
+ 0.3
4.5 < V
CC
< 5.5 2.2 V
CC
+ 0.5
V
IL [6]
Input LOW Voltage 2.2 < V
CC
< 2.7 –0.3 0.4 V
2.7 < V
CC
< 3.6 –0.3 0.6
4.5 < V
CC
< 5.5 –0.5 0.6
I
IX
Input Leakage Current GND < V
I
< V
CC
–1 +1 μA
I
OZ
Output Leakage Current GND < V
O
< V
CC
, Output Disabled –1 +1 μA
I
CC
V
CC
Operating Supply
Current f = f
max
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA, CMOS levels 15 20 mA
f = 1 MHz 2 2.5
I
SB1
Automatic CE Power
Down Current — CMOS
Inputs
CE > V
CC
− 0.2V, V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = f
max
(Address and Data Only), f = 0 (OE and WE),
V
CC
= V
CC(max)
17μA
I
SB2
Automatic CE Power
Down Current — CMOS
Inputs
CE > V
CC
– 0.2V, V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= V
CC(max)
17μA
Notes
3. V
IL
(min) = –2.0V for pulse durations less than 20 ns.
4. V
IH
(max) = V
CC
+ 0.75V for pulse durations less than 20 ns.
5. Full device AC operation assumes a minimum of 100 μs ramp time from 0 to V
CC
(min) and 200 μs wait tim e after V
CC
stabilization.
6. Under DC conditions the device meets a V
IL
of 0.8V (for V
CC
range of 2.7V to 3.6V and 4.5V to 5.5V) and 0. 6V (for V
CC
range of 2.2V to 2.7V). However, in dynamic
conditions Input LOW voltage applied to the device must not be higher than 0.6V and 0.4V for the above ranges. Refer to AN13470 for details.
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CY62148ESL MoBL
®
Document #: 001-50045 Rev. ** Page 4 of 10
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions Max Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
10 pF
C
OUT
Output Capacitance 10 pF
Thermal Resistan ce
Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions STSOP Unit
Θ
JA
Thermal Resistance
(Junction to Ambient) Still Air, soldered on a 3 x 4.5 inch, two layer printed
circuit board 49.02 °C/W
Θ
JC
Thermal Resistance
(Junction to Case) 14.07 °C/W
Figure 2. AC Test Loads and Waveforms
Parameters 2.50V 3.0V 5.0V Unit
R1 16667 1103 1800 Ω
R2 15385 1554 990 Ω
R
TH
8000 645 639 Ω
V
TH
1.20 1.75 1.77 V
V
CC
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND 90%
10% 90%
10%
Rise Time = 1 V/ns Fall Time = 1 V/ns
OUTPUT V
Equivalentto:
THEVENIN
EQUIVALENT
ALL INPUT PULSES
R
TH
R1
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®
Document #: 001-50045 Rev. ** Page 5 of 10
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions Min Typ
[2]
Max Unit
V
DR
V
CC
for Data Retention 1.5 V
I
CCDR
Data Retention Current CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V V
CC
= 1.5V 1 7 μA
t
CDR [7]
Chip Deselect to Data
Retention Time 0ns
t
R [8]
Operation Recovery Time t
RC
ns
Data Retention Waveform
V
CC(min)
V
CC(min)
t
CDR
V
DR
>1.5V
DATA RETENTION MODE
t
R
V
CC
CE
Notes
7. Tested initially and after an y design or process changes that may affect these parameters.
8. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100 μs or stable at V
CC(min)
> 100 μs.
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CY62148ESL MoBL
®
Document #: 001-50045 Rev. ** Page 6 of 10
Switching Characteristics
Over the Operating Range
[9]
Parameter Description 55 ns Unit
Min Max
Read Cycle
t
RC
Read Cycle Time 55 ns
t
AA
Address to Data Valid 55 ns
t
OHA
Data Hold from Address Change 10 ns
t
ACE
CE LOW to Data Valid 55 ns
t
DOE
OE LOW to Data Valid 25 ns
t
LZOE
OE LOW to Low Z
[10]
5ns
t
HZOE
OE HIGH to High Z
[10, 11]
20 ns
t
LZCE
CE LOW to Low Z
[10]
10 ns
t
HZCE
CE HIGH to High Z
[10, 11]
20 ns
t
PU
CE LOW to Power Up 0 ns
t
PD
CE HIGH to Power Up 55 ns
Write Cycle
[12]
t
WC
Write Cycle Time 55 ns
t
SCE
CE LOW to Write End 40 ns
t
AW
Address Setup to Write End 40 ns
t
HA
Address Hold from Write End 0 ns
t
SA
Address Setup to Write Start 0 ns
t
PWE
WE Pulse Width 40 ns
t
SD
Data Setup to Write End 25 ns
t
HD
Data Hold from Write End 0 ns
t
HZWE
WE LOW to High Z
[10, 11]
20 ns
t
LZWE
WE HIGH to Low Z
[10]
10 ns
Notes
9. Test conditions for all para meters other than tri-st ate pa rameters assume signal transition t ime of 3 ns or less (1 V/ns), ti ming reference levels of V
CC(typ)
/2, input pulse
levels of 0 to V
CC(typ)
, and output loading of the specif ied I
OL
/I
OH
as shown in AC Test Loads and Waveforms on page 4.
10.At any given temperature and voltage condition, t
HZCE
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
LZWE
for any given device.
11. t
HZOE
, t
HZCE
, and t
HZWE
transitions are measured when the output enter a high impedance state.
12.The internal write time of the memory is defi ned by th e overlap of WE , CE = V
IL
. All signals must be ACTIVE to initiate a writ e and any of th ese signals can te rminat e
a write by going INACTIVE. The data input setup and hold timing must be referenced to the edge of the signal that terminates the write.
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CY62148ESL MoBL
®
Document #: 001-50045 Rev. ** Page 7 of 10
Switching Waveforms
Figure 3. Read Cycle No. 1 (Address Transition Controlled)
[13, 14]
Figure 4. Read Cycle No. 2 (OE Controlled)
[14, 15]
Figure 5. Write Cycle No. 1 (WE Controlled, OE HIGH During Write)
[16, 17]
PREVIOUS DATA VALID DATA VALID
RC
t
AA
t
OHA
t
RC
ADDRESS
DATA OUT
50%
50%
DATA VALID
t
RC
t
ACE
t
DOE
t
LZOE
t
LZCE
t
PU
HIGH IMPEDANCE
t
HZOE
t
HZCE
t
PD
IMPEDANCE
I
CC
I
SB
HIGH
ADDRESS
CE
DATA OUT
V
CC
SUPPLY
CURRENT
OE
DATA VALID
t
HD
t
SD
t
PWE
t
SA
t
HA
t
AW
t
SCE
t
WC
t
HZOE
ADDRESS
CE
WE
DATA IO
OE
NOTE
18
Notes
13.Device is continuously selected. OE, CE = V
IL
.
14.WE is HIGH for read cycles.
15.Address valid before or similar to CE transition LOW.
16.Data IO is high impedance if OE = V
IH
.
17.If CE goes HIGH simultaneously with WE HIGH, the output remains in high impedance state.
18.During this period, the IOs are in output state. Do not apply input signals.
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CY62148ESL MoBL
®
Document #: 001-50045 Rev. ** Page 8 of 10
Figure 6. Write Cycle No. 2 (CE Controlled)
[16, 17]
Figure 7. Write Cycle No. 3 (WE Controlled, OE LOW)
[17]
Truth Table
CE WE OE Inputs/Outputs Mode Power
H X X High Z Deselect/Power Down Standby (I
SB
)
L H L Data Out Read Active (I
CC
)
L H H High Z Output Disabled Active (I
CC
)
L L X Dat a in Write Active (I
CC
)
Switching Waveforms
(continued)
t
WC
DATA VALID
t
AW
t
SA
t
PWE
t
HA
t
HD
t
SD
t
SCE
ADDRESS
CE
DATA IO
WE
DATA VALID
t
HD
t
SD
t
LZWE
t
PWE
t
SA
t
HA
t
AW
t
SCE
t
WC
t
HZWE
ADDRESS
CE
WE
DATA IO
NOTE
18
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CY62148ESL MoBL
®
Document #: 001-50045 Rev. ** Page 9 of 10
Ordering Information
Speed
(ns) Ordering Code Package
Diagram Package Type Operating
Range
55 CY62148ESL-55ZAXI 51-85094 32-Pin STSOP (Pb-Free) Industrial
Package Diagram
Figure 8. 32-Pin Shrunk Thin Small Outline Package (8 x 13.4 mm), 51-85094
51-85094-*D
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Document #: 001-50045 Rev. ** Revised January 21, 2009 Page 10 of 10
MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor. All product and company names mentioned in this document are the
trademarks of their respective holders.
CY62148ESL MoBL
®
© Cypress Semiconductor Corporation, 2009. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any
circuitry other than circuitry embod ied in a Cypress produc t. Nor does it convey or im ply any license under patent or other r ights. Cypress prod ucts are not warr anted nor intende d to be used for medica l,
life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical
components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (s oftware and/ or firm war e) is own ed by Cypre ss Se micond ucto r Corp oratio n (C ypress ) an d is pr otec ted by and s ubj ect to worldwide patent protection (United States and foreign),
United States copyright la ws and inte rnati ona l tre aty pro visi ons. Cypr ess her eby gr ant s to li censee a per sonal , non-ex clu sive, non-transferable license to copy , use, modify , create derivative works of,
and compile the Cypress Source Co de and derivative works for the sole p urpose of creating custo m software and or firmware in support o f licensee product to be used only in conjun ction with a Cypre ss
integrated ci rcuit as speci fied in the app licable agreem ent. Any repr oduction, modifi cation, trans lation, compi lation, or repr esentation o f this Source Code except as specified above is prohi bited without
the express written perm i ssion of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress re serves the right to make cha nges without further notice to the materials described herein. Cypress does not
assume any liabil ity ar isin g out o f the ap plic ation or use o f an y product o r c ircuit describe d her ein. Cypress d oes not aut hori ze it s product s fo r use as critica l component s in life-sup port systems whe re
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document History Page
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Document Title: CY62148ESL MoBL
®
4-Mbit (512K x 8) Static RAM
Document Number: 001-50045
Rev. ECN No. Orig. of
Change Submission
Date Description of Change
** 2612938 VKN/PYRS 01/21/09 New data sheet
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