FQI12N60CTU - Fairchild - Datasheet.Wiki

FQB12N60C / FQI12N60C Rev. A

FQB12N60C / FQI12N60C 600V N-Channel MOSFET

September 2007

QFET®

FQB12N60C / FQI12N60C

600V N-Channel MOSFET

Features

• 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V

• Low gate charge ( typical 48 nC)

• Low Crss ( typical 21pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

Absolute Maximum Ratings

Thermal Characteristics

D2-PAK

FQB Series

I2-PAK

FQI Series

GSD

Symbol Parameter FQB12N60C/FQI12N60C Units

VDSS Drain-Source Voltage 600 V

IDDrain Current - Continuous (TC = 25°C) 12 A

- Continuous (TC = 100°C) 7.4 A

IDM Drain Current - Pulsed (Note 1) 48 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 870 mJ

IAR Avalanche Current (Note 1) 12 A

EAR Repetitive Avalanche Energy (Note 1) 22.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PDPower Dissipation (TA = 25°C) 3.13 W

Power Dissipation (TC = 25°C) 225 W

- Derate above 25°C 1.78 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 0.56 °C/W

RθJA Thermal Resistance, Junction-to-Ambient* -- 40 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

2www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

FQB12N60C / FQI12N60C 600V N-Channel MOSFET

Package Marking and Ordering Information

Electrical Characteristics TC = 25°C unless otherwise noted

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 11mH, IAS =12A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 12A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Device Marking Device Package Reel Size Tape Width Quantity

FQB12N60C FQB12N60CTM D2-PAK 330mm 24mm 800

FQI12N60C FQI12N60CTU I2-PAK - - 50

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V

∆BVDSS/

∆TJ

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.5 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA

VDS = 480 V, TC = 125°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V

RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 6 A -- 0.53 0.65 Ω

gFS Forward Transconductance VDS = 50 V, ID = 6 A (Note 4) -- 13 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 1760 2290 pF

Coss Output Capacitance -- 182 235 pF

Crss Reverse Transfer Capacitance -- 21 28 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 300 V, ID = 12A,

RG = 25 Ω

(Note 4, 5)

-- 30 70 ns

trTurn-On Rise Time -- 85 180 ns

td(off) Turn-Off Delay Time -- 140 280 ns

tfTurn-Off Fall Time -- 90 190 ns

QgTotal Gate Charge VDS = 480 V, ID = 12A,

VGS = 10 V

(Note 4, 5)

-- 48 63 nC

Qgs Gate-Source Charge -- 8.5 -- nC

Qgd Gate-Drain Charge -- 21 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 12 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 48 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 12 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 12 A,

dIF / dt = 100 A/µs (Note 4)

-- 420 -- ns

Qrr Reverse Recovery Charge -- 4.9 -- µC

3www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

FQB12N60C / FQI12N60C 600V N-Channel MOSFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

100101

100

101

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

Notes :※

1. 250µ s Pulse Test

2. TC

= 25℃

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

246810

10-1

100

101

150oC

25oC

-55oC

Not es :※

1. VDS = 40V

2. 250µ s Pulse Test

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10-1

100

101

150℃

Notes :※

1. VGS = 0V

2. 250µ s Pulse Test

25℃

IDR, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

0 5 10 15 20 25 30 35

0.5

1.0

1.5

VGS = 20V

VGS = 10V

Note : T※J = 25℃

RDS(ON) [Ω],

Drain-Source On-Resistance

, Drain Current [A]

0 1020304050

VDS = 300V

VDS = 120V

VDS = 480V

Note : I※D

= 12A

VGS, Gate-Source Voltage [V]

, Total Gate Charge [nC]

10-1 100101

500

1000

1500

2000

2500

3000

3500

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

Not es ;※

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

iss

Capacitance [pF]

DS, Drain-Source Voltage [V]

4www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

FQB12N60C / FQI12N60C 600V N-Channel MOSFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Volt age Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

Notes :※

1. VGS = 0 V

2. ID

= 250 µ A

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

, Junction Temperature [o

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :※

1. VGS = 10 V

2. ID

= 6.0 A

RDS(ON), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

25 50 75 100 125 150

ID, Drain Current [A]

, Case Temperature [ ]℃

100101102103

10-2

10-1

100

101

102

100 ms

10 µs

10 ms

1 ms

100 µs

Operation in This Area

is Limited by R DS(o n)

Notes :※

1. TC

= 25 o

2. TJ = 150 o

3. Single Pulse

ID, Drain Current [A]

DS, Drain-Source Voltage [V]

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

Notes :※

1. ZθJC(t) = 0.56 /W Max.℃

2. D uty Factor, D = t1/t2

3. TJM - TC = PDM * ZθJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), Thermal Response

t1, Square W ave Pulse Duration [sec]

PDM

5www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

FQB12N60C / FQI12N60C 600V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

6www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

FQB12N60C / FQI12N60C 600V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

7www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

FQB12N60C / FQI12N60C 600V N-Channel MOSFET

Package Dimensions

10.00 ±0.20

(8.00)

(4.40)

.27 ±0.10 0.80 ±0.10

0.80 ±0.10

(2XR0.45)

9.90 ±0.20 4.50 ±0.20

0.10 ±0.15

2.40 ±0.20

2.54 ±0.30

15.30 ±0.30

9.20 ±0.20

4.90 ±0.20

1.40 ±0.20

2.00 ±0.10

(0.75)

(1.75)

(7.20)

0°~3°

1.20 ±0.20

9.20 ±0.20

15.30 ±0.30

4.90 ±0.20

(0.40)

2.54 TYP 2.54 TYP

1.30 +0.10

–0.05

0.50 +0.10

–0.05

D2-PAK

Dimensions in Millimeters

8www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

FQB12N60C / FQI12N60C 600V N-Channel MOSFET

Package Dimensions (Continued)

9.90 ±0.20

2.40 ±0.20

4.50 ±0.20

1.27 ±0.10 1.47 ±0.10

(45°)

0.80 ±0.10

10.00 ±0.20

2.54 TYP2.54 TYP

13.08 ±0.20

9.20 ±0.20

1.20 ±0.20

10.08 ±0.20 MAX13.40

MAX 3.00

(0.40)

(1.46)

(0.94)

1.30 +0.1

–0.0

0.50 +0.10

–0.05

I2-PAK

Dimensions in Millimeters

9www.fairchildsemi.com

FQB12N60C / FQI12N60C Rev. A

FQB12N60C / FQI12N60C 600V N-Channel MOSFET

TRADEMARKS

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE

APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER

ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S

WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body or (b)

support or sustain life, and (c) whose failure to perform when

properly used in accordance with instructions for use provided

in the labeling, can be reasonably expected to result in a

significant injury to the user.

2. A critical component in any component of a life support,

device, or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or

system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx®

Build it Now™

CorePLUS™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FPS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

GTO™

i-Lo™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MillerDrive™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP-SPM™

Power220®

Power247®

POWEREDGE®

Power-SPM™

PowerTrench®

Programmable Active Droop™

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

The Power Franchise®

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

µSerDes™

UHC®

UniFET™

VCX™

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary First Production

This datasheet contains preliminary data; supplementary data will be pub-

lished at a later date. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve design.

Obsolete Not In Production

This datasheet contains specifications on a product that has been discontin-

ued by Fairchild Semiconductor. The datasheet is printed for reference infor-

mation only.

Rev. I31