INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 25 September 2015. MIL-PRF-19500/251T 25 June 2015 SUPERSEDING MIL-PRF-19500/251R 12 May 2010 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N2218, AND 2N2219, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MILPRF-19500. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. * 1.2 Package outlines. The device packages for the encapsulated device types are as follows: TO-39 and TO-5 in accordance with figure 1 1.3 Maximum ratings unless otherwise specified TA = +25C. Types 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL PT TA = +25C (1) W PT TC = +25C (1) W VCBO VCEO VEBO IC TSTG and TJ RJC max (2) RJA max (2) V dc V dc V dc mA dc For all C/W C/W 0.8 0.8 0.8 3.0 3.0 3.0 60 75 75 30 50 50 5 6 6 800 800 800 -65 to +200C 50 50 50 195 195 195 (1) See derating curve, figures 2 and 3. (2) For thermal impedance curves, see figures 4 and 5. * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https://assist.dla.mil . AMSC N/A FSC 5961 MIL-PRF-19500/251T 1.4 Primary electrical characteristics. Types hFE at VCE = 10 V dc hFE1 IC = 100 A dc Min Max 2N2218 2N2219 2N2218A 2N2219A 2N2218AL 2N2219AL Types hFE2 IC = 1.0 mA dc Min Max 20 35 30 50 30 50 25 50 35 75 35 75 150 325 150 325 150 325 hFE3 IC = 10 mA dc Min Max hFE4 (1) IC = 150 mA dc Min Max 35 75 40 100 40 100 40 100 40 100 40 100 Cobo IC = 20 mA dc VCE = 20 V dc f = 100 MHz IE = 0, VCE = 10 V dc 100 kHz f 1 MHz 2N2218 2N2219 2N2218A 2N2219A 2N2218AL 2N2219AL Types 2.5 2.5 2.5 2.5 2.5 2.5 12.0 12.0 12.0 12.0 12.0 12.0 Min toff ns Max Min 8 8 8 8 8 8 VCE(sat)1 (1) IC = 150 mA dc IB = 15 mA dc V dc min max VCE(sat)2 (1) IC = 500 mA dc IB = 50 mA dc V dc min max 0.4 0.4 0.3 0.3 0.3 0.3 1.6 1.6 1.0 1.0 1.0 1.0 2N2218 2N2219 2N2218A 2N2219A 2N2218AL 2N2219AL 20 30 20 30 20 30 ton pF Max 120 300 120 300 120 300 Switching | hfe | Min hFE5 (1) IC = 500 mA dc Min Max (1) Pulsed (see 4.5.1). 2 ns Max 40 40 35 35 35 35 VBE(sat)1 (1) IC = 150 mA dc IB = 15 mA dc V dc min max 0.6 0.6 0.6 0.6 0.6 0.6 1.3 1.3 1.2 1.2 1.2 1.2 Min Max 250 250 300 300 300 300 VBE(sat)2 (1) IC = 500 mA dc IB = 50 mA dc V dc min max 2.6 2.6 2.0 2.0 2.0 2.0 MIL-PRF-19500/251T Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r Dimensions Inches Millimeters Min Max Min Max .305 .335 7.75 8.51 .240 .260 6.10 6.60 .335 .370 8.51 9.40 .200 TP 5.08 TP .016 .019 0.41 0.48 See note 14 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .030 0.76 .029 .045 0.74 1.14 .028 .034 0.71 0.86 .010 0.25 45 TP 45 TP Note 7 8,9 8,9 8,9 8,9 7 5 3,4 3 10 7 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 9. All three leads. 10. The collector shall be internally connected to the case. 11. Dimension r (radius) applies to both inside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. For L suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For non-L suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max. FIGURE 1. Physical dimensions (similar to TO-39, TO-5). 3 MIL-PRF-19500/251T * 1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-19500, and as specified herein. See 6.4 for PIN construction example, 6.5 for a list of available PINs. * 1.5.1 JAN certification mark and quality level. * 1.5.1.1 Quality level designators for encapsulated devices. The quality level designators for encapsulated devices that are applicable for this specification sheet from the lowest to the highest level are as follows: The base quality level "JAN", "JANTX" "JANTXV", and "JANS". * 1.5.2 Radiation hardness assurance (RHA) designator. The RHA levels that are applicable for this specification sheet from lowest to highest for JANS quality levels are as follows: "M", "D", "P", "L", "R", "F', "G", and "H". The RHA levels that are applicable for this specification sheet from lowest to highest for JANTXV quality levels are as follows: "R", and "F". * 1.5.3 Device type. The designation system for the device types covered by this specification sheet are as follows. * 1.5.3.1 First number and first letter symbols. The transistors of this specification sheet use the first number and letter symbols "2N". * 1.5.3.2 Second number symbols. The second number symbols for the transistors covered by this specification sheet are as follows: "2218" and "2219". * 1.5.4 Suffix symbols. The following suffix letters are incorporated in the PIN in the order listed in the table as applicable: A blank first suffix indicates a TO-39 package, dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max. (see figure 1). A Indicates alternate electrical characteristics. L Indicates a TO-5 package, dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. (see figure 1). * 1.5.5 Lead finish. The lead finishes applicable to this specification sheet are listed on QML-19500. 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3 and 4 of this specification, whether or not they are listed. 4 MIL-PRF-19500/251T 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http://quicksearch.dla.mil). 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. PCB ............... Printed circuit board RJA ................ Thermal resistance junction to ambient. RJC ................ Thermal resistance junction to case. * 3.4 Interface requirements and physical dimensions. Interface requirements and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 5 MIL-PRF-19500/251T 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device "2N" identifier (depending upon degree of abbreviation required). * 3.9 Workmanship. Switching transistor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 6 MIL-PRF-19500/251T * 4.3 Screening (JAN, JANTXV, JANTX, and JANS levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen Measurement JANS level (1) 3c JANTX and JANTXV levels Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) 9 ICBO2, hFE4 Not applicable 10 48 hours minimum 48 hours minimum 11 ICBO2; hFE4; ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater. hFE4 = 15 percent ICBO2, hFE4 12 13 See 4.3.1 Subgroups 2 and 3 of table I herein; ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; hFE4 = 15 percent See 4.3.1 Subgroup 2 of table I herein; ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; hFE4 = 15 percent (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements for JANTX and JANTXV level devices. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be applied to achieve TJ = +135C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3. TA = 25C 10C. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing site's burn-in data and performance history will be essential criteria for burn-in modification approval. Use method 3100 of MIL-STD-750 to measure TJ. 4.3.2 Thermal impedance. The thermal impedance shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, (and VC where appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of table I, group A1 and A2 inspection only (table E-VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2 herein). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 7 MIL-PRF-19500/251T * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. 4.4.2.1 Group B inspection (JANS), table E-VIa of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB = 10 V dc, adjust device current, or power, to achieve a minimum TJ of +100C. B5 1027 VCB = 10 V dc; PD 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure occurs, resubmission shall be at the test conditions of the original sample.) Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500, table E-VIa, adjust TA or PD to achieve TJ = +275C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve a TJ = +225C minimum. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during CI, (conformance inspection), shall be analyzed to the extent possible to identify root cause and corrective action. Whenever a failure is identified as wafer lot or wafer processing related, the entire wafer lot and related devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failures mode has been implemented and the devices from the wafer lot are screened to eliminate the failure mode. Step Method Condition 1 1026 Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to achieve TJ = +150C minimum using a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 2 1048 Blocking life, TA = +150C, VCB = 80 percent of rated voltage, 48 hours minimum. n = 45 devices, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV, samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 8 MIL-PRF-19500/251T * 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the test and conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. 4.4.3.1 Group C inspection (JANS), table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E. C5 3131 RJA and RJC only, as applicable (see 1.3) and in accordance with thermal impedance curves. C6 1026 1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ = +150C minimum and a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. n = 45, c = 0. The sample size may be increased and the test time decreased as long as the devices are stressed for a total of 45,000 device hours minimum, and the actual time of test is at least 340 hours. 4.4.3.2 Group C inspection (JAN, JANTX, and JANTXV), table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E. C5 3131 RJA and RJC only, as applicable (see 1.3) and in accordance with thermal impedance curves. C6 Not applicable. 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes table I tests herein for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include the group D tests specified in table II herein. These tests shall be performed as required in accordance with MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other subgroups. Group D inspection may also be performed ahead of the screening lot using die selected in accordance with MIL-PRF-19500 and related documents. Alternate package options may also be substituted for the testing provided there is no adverse effect to the fluence profile. * 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 9 MIL-PRF-19500/251T TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Limit Unit Symbol Method Conditions Min Max Subgroup 1 2/ * Visual and mechanical examination 3/ 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Salt atmosphere (corrosion) 1041 n = 6 devices, c = 0, (For laser marked devices only) Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Hermetic seal 4/ 6/ Fine leak Gross leak 1071 n = 22 devices, c = 0 Electrical measurements 4/ Bond strength 3/ 4/ Table I, subgroup 2 2037 Precondition TA = +250C at t = 24 hours or TA = +300C at t = 2 hours n = 11 wires, c = 0 2075 n = 4 devices, c = 0 Thermal impedance 3131 See 4.3.2 ZJX Collector to base cutoff current 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3036 Condition D VCB = 60 V dc VCB = 75 V dc VCB = 75 V dc ICBO1 Emitter to base cutoff current 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3061 Condition D VEB = 5 V dc VEB = 6 V dc VEB = 6 V dc IEBO1 Breakdown voltage, collector to emitter 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3011 Bias condition D; IE = 10 mA dc; pulsed (see 4.5.1). V(BR)CEO Decap internal visual (design verification) 4/ Subgroup 2 See footnotes at end of table. 10 C/W 30 50 50 10 10 10 A dc A dc A dc 10 10 10 A dc A dc A dc V dc V dc V dc MIL-PRF-19500/251T TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Limit Unit Symbol Method Conditions Min Max Subgroup 2 - Continued Collector to emitter cutoff current 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3041 Bias condition C Emitter to base cutoff current 3061 Bias condition D; VEB = 4 V dc IEBO2 Collector to base cutoff current 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3036 Bias condition D ICBO2 Forward-current transfer ratio 3076 ICES VCE = 30 V dc VCE = 50 V dc VCE = 50 V dc VCB = 50 V dc VCB = 60 V dc VCB = 60 V dc VCE = 10 V dc; IC = 0.1 mA dc; pulsed (see 4.5.1) 3076 VCE = 10 V dc; IC = 1.0 mA dc; pulsed (see 4.5.1) 25 50 35 75 3076 VCE = 10 V dc; IC = 10 mA dc; pulsed (see 4.5.1) 10 10 10 nA dc nA dc nA dc 150 325 150 325 hFE3 35 75 40 100 3076 VCE = 10 V dc; IC = 150 mA dc; pulsed (see 4.5.1) hFE4 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL Forward-current transfer ratio 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL See footnotes at end of table. nA dc hFE2 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL Forward-current transfer ratio 10 20 35 30 50 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL Forward-current transfer ratio nA dc nA dc nA dc hFE1 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL Forward-current transfer ratio 10 10 10 40 100 40 100 3076 VCE = 10 V dc; IC = 500 mA dc; pulsed (see 4.5.1) hFE5 20 30 20 30 11 120 300 120 300 MIL-PRF-19500/251T TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Limit Unit Symbol Method Conditions Min Max Subgroup 2 - Continued Collector-emitter saturation voltage 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3071 Collector-emitter saturation voltage 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3071 Base-emitter saturation voltage 3066 IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) Test condition A; IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) VCE(sat)1 Test condition A; IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) 1.6 1.0 1.0 V dc V dc V dc 1.3 1.2 1.2 V dc V dc V dc 2.6 2.0 2.0 V dc V dc V dc 10 A dc VBE(sat)1 0.6 0.6 0.6 3066 V dc V dc V dc VCE(sat)2 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL Base-emitter saturation voltage 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 0.4 0.3 0.3 VBE(sat)2 Subgroup 3 High temperature operation Collector to base cutoff current 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL TA = +150C 3036 ICBO3 VCB = 50 V dc VCB = 60 V dc VCB = 60 V dc Low temperature operation Forward-current transfer ratio 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL Bias condition D TA = -55C 3076 VCE = 10 V dc; IC = 10 mA dc hFE6 15 35 35 See footnotes at end of table. 12 MIL-PRF-19500/251T TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Limit Unit Symbol Method Conditions Min Max 2.5 12 Subgroup 4 Magnitude of common emitter small-signal short- circuit forward current transfer ratio 3306 VCE = 20 V dc; IC = 20 mA dc; f = 100 MHz hfe Small-signal short-circuit forward current transfer ratio 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL 3206 VCE = 10 V dc; IC = 1 mA dc; f = 1 kHz hfe Open circuit output capacitance 3236 VCB = 10 V dc; IE = 0; 100 kHz f 1 MHz Cobo 8 pF Open circuit output capacitance 3240 VEB = 0.5 V dc; IC = 0; 100 kHz f 1 MHz Cibo 25 pF Saturated turn-on time 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL (See figure 6) ton 40 35 35 ns ns ns Saturated turn-off time 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL (See figure 7) 250 300 300 ns ns ns 25 50 35 75 toff Subgroups 5 and 6 Not applicable 1/ For sampling plan see MIL-PRF-19500. 2/ For resubmission of failed test in subgroup 1 of table I, double the sample size of the failed test or sequence of tests. A failure in table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for JANS devices. 5/ Not required for laser marked devices. 6/ This hermetic seal test is an end-point to temp-cycling in addition to electrical measurements. 13 MIL-PRF-19500/251T TABLE II. Group D inspection. Inspection 1/ 2/ 3/ Method MIL-STD-750 Conditions Limit Symbol Min Unit Max Subgroup 1 4/ Neutron irradiation 1017 Neutron exposure VCES = 0 V Collector to base cutoff current 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3036 Condition D VCB = 60 V dc VCB = 75 V dc VCB = 75 V dc ICBO1 Emitter to base cutoff current 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3061 Condition D VEB = 5 V dc VEB = 6 V dc VEB = 6 V dc IEBO1 Breakdown voltage, collector to emitter 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3011 Bias condition D; IE = 10 mA dc; pulsed (see 4.5.1). V(BR)CEO Collector to emitter cutoff current 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3041 Bias condition C ICES Emitter to base cutoff current 3061 Bias condition D; VEB = 4 V dc IEBO2 Collector to base cutoff current 3036 Bias condition D ICBO2 Forward-current transfer ratio VCB = 50 V dc VCB = 60 V dc VCB = 60 V dc 3076 VCE = 10 V dc; IC = 0.1 mA dc; pulsed (see 4.5.1) 20 20 20 A dc A dc A dc V dc V dc V dc 20 20 20 nA dc nA dc nA dc 20 nA dc 20 20 20 nA dc nA dc nA dc [hFE1] 5/ 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL Forward-current transfer ratio A dc A dc A dc 30 50 50 VCE = 30 V dc VCE = 50 V dc VCE = 50 V dc 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 20 20 20 [10] [17.5] [15] [25] 3076 VCE = 10 V dc; IC = 1.0 mA dc; pulsed (see 4.5.1) 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL [hFE2] 5/ [12.5] [25] [17.5] [37.5] See footnotes at end of table. 14 150 325 150 325 MIL-PRF-19500/251T TABLE II. Group D inspection - Continued. Inspection 1/ 2/ 3/ Method MIL-STD-750 Conditions Limit Symbol Min Unit Max Subgroup 1 - Continued. Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 10 mA dc; pulsed (see 4.5.1) [hFE3] 5/ 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL Forward-current transfer ratio [17.5] [37.5] [20] [50] 3076 VCE = 10 V dc; IC = 150 mA dc; pulsed (see 4.5.1) [hFE4] 5/ 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL Forward-current transfer ratio [20] [50] [20] [50] 3076 VCE = 10 V dc; IC = 500 mA dc; pulsed (see 4.5.1) [hFE5] 5/ 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL [10] [15] [10] [15] Collector-emitter saturation voltage 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3071 Collector-emitter saturation voltage 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3071 Base-emitter saturation voltage 3066 IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) Test condition A; IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) VCE(sat)1 Test condition A; IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL See footnotes at end of table. 15 V dc V dc V dc 1.84 1.15 1.15 V dc V dc V dc 1.50 1.38 1.38 V dc V dc V dc 3.0 2.3 2.3 V dc V dc V dc VBE(sat)1 0.6 0.6 0.6 3066 0.46 0.35 0.35 VCE(sat)2 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL Base-emitter saturation voltage 120 300 120 300 VBE(sat)2 MIL-PRF-19500/251T TABLE II. Group D inspection - Continued. Inspection 1/ 2/ 3/ Method MIL-STD-750 Conditions Limit Symbol Min Unit Max Subgroup 2 Total dose irradiation 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 1019 Gamma exposure VCES = 24 V VCES = 40 V VCES = 40 V Collector to base cutoff current 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3036 Condition D VCB = 60 V dc VCB = 75 V dc VCB = 75 V dc ICBO1 Emitter to base cutoff current 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3061 Condition D VEB = 5 V dc VEB = 6 V dc VEB = 6 V dc IEBO1 Breakdown voltage, collector to emitter 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3011 Bias condition D; IE = 10 mA dc; pulsed (see 4.5.1). V(BR)CEO Collector to emitter cutoff current 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3041 Bias condition C ICES Emitter to base cutoff current 3061 Bias condition D; VEB = 4 V dc IEBO2 Collector to base cutoff current 2N2218, 2N2219 3036 Bias condition D ICBO2 Forward-current transfer ratio VCB = 50 V dc VCB = 60 V dc VCB = 60 V dc 3076 VCE = 10 V dc; IC = 0.1 mA dc; pulsed (see 4.5.1) 20 20 20 A dc A dc A dc V dc V dc V dc 20 20 20 nA dc nA dc nA dc 20 nA dc 20 20 20 nA dc nA dc nA dc [hFE1] 5/ 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL Forward-current transfer ratio A dc A dc A dc 30 50 50 VCE = 30 V dc VCE = 50 V dc VCE = 50 V dc 2N2218A, 2N2219A 2N2218AL, 2N2219AL 20 20 20 [10] [17.5] [15] [25] 3076 VCE = 10 V dc; IC = 1.0 mA dc; pulsed (see 4.5.1) 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL [hFE2] 5/ [12.5] [25] [17.5] [37.5] See footnotes at end of table. 16 150 325 150 325 MIL-PRF-19500/251T TABLE II. Group D inspection - Continued. Inspection 1/ 2/ 3/ Method MIL-STD-750 Conditions Limit Symbol Min Unit Max Subgroup 2 - Continued. Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 10 mA dc; pulsed (see 4.5.1) [hFE3] 5/ 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL Forward-current transfer ratio [17.5] [37.5] [20] [50] 3076 VCE = 10 V dc; IC = 150 mA dc; pulsed (see 4.5.1) [hFE4] 5/ 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL Forward-current transfer ratio [20] [50] [20] [50] 3076 VCE = 10 V dc; IC = 500 mA dc; pulsed (see 4.5.1) [hFE5] 5/ 2N2218 2N2219 2N2218A, 2N2218AL 2N2219A, 2N2219AL [10] [15] [10] [15] Collector-emitter saturation voltage 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3071 Collector-emitter saturation voltage 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL 3071 Base-emitter saturation voltage 3066 IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) Test condition A; IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) VCE(sat)1 Test condition A; IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL See footnotes at end of table. 17 V dc V dc V dc 1.84 1.15 1.15 V dc V dc V dc 1.50 1.38 1.38 V dc V dc V dc 3.0 2.3 2.3 V dc V dc V dc VBE(sat)1 0.6 0.6 0.6 3066 0.46 0.35 0.35 VCE(sat)2 2N2218, 2N2219 2N2218A, 2N2219A 2N2218AL, 2N2219AL Base-emitter saturation voltage 120 300 120 300 VBE(sat)2 MIL-PRF-19500/251T TABLE II. Group D inspection - Continued. 1/ 2/ 3/ 4/ 5/ Tests to be performed on all devices receiving radiation exposure. For sampling plan, see MIL-PRF-19500. Electrical characteristics apply to device types unless otherwise noted. See 6.2.e herein. See method 1019 of MIL-STD-750 for how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and post-radiation hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never exceed the pre-radiation minimum hFE that it is based upon. 18 MIL-PRF-19500/251T TABLE III. Group E inspection (all quality levels) - for qualification or re-qualification only. MIL-STD-750 Inspection Method Qualification Conditions Subgroup 1 45 devices c=0 Temperature cycling (air to air) 1051 Hermetic seal 1071 Test condition C, 500 cycles Fine leak Gross leak See table I, subgroup 2 herein. Electrical measurements Subgroup 2 Intermittent life 45 devices c=0 1037 Electrical measurements VCB = 10 V dc, 6,000 cycles, forced air cooling allowed on cooling cycle only. Adjust device current, or power, to achieve a minimum TJ of +100C. Table I, subgroup 2 herein. Subgroup 4 Thermal impedance curves See MIL-PRF-19500, table E-IX, group E, subgroup 4. Subgroup 5 Not applicable * Subgroup 6 Electrostatic discharge (ESD) 11 devices 1020 Subgroup 8 Reverse stability 45 devices c=0 1033 Condition B. 19 MIL-PRF-19500/251T NOTES: 1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. Derate design curve constrained by the maximum junction temperature (TJ 200C) and power rating specified. (See 1.3 herein.) 3. Derate design curve chosen at TJ 150C, where the maximum temperature of electrical test is performed. 4. Derate design curve chosen at TJ 125C, and 110C to show power rating where most users want to limit TJ in their application. FIGURE 2. Derating for 2N2218, 2N2218A, 2N2218AL, 2N2219, 2N2219A, and 2N2219AL (RJC) (TO-39 and TO-5). 20 MIL-PRF-19500/251T NOTES: 1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. Derate design curve constrained by the maximum junction temperature (TJ 200C) and power rating specified. (See 1.3 herein.) 3. Derate design curve chosen at TJ 150C, where the maximum temperature of electrical test is performed. 4. Derate design curve chosen at TJ 125C, and 110C to show power rating where most users want to limit TJ in their application. FIGURE 3. Derating for 2N2218, 2N2218A, 2N2218AL, 2N2219, 2N2219A, and 2N2219AL (RJA) (TO-39 and TO-5). 21 MIL-PRF-19500/251T TA = +25C, 800 mW, Thermal resistance RJA = 195C/W FIGURE 4. Thermal impedance graph (RJA) for 2N2218, 2N2218A, 2N2218AL, 2N2219, 2N2219A, and 2N2219AL (TO-39 and TO-5). 22 MIL-PRF-19500/251T Maximum Thermal Impedance Theta (C/W) 100 10 1 0.000001 0.00001 0.0001 0.001 0.01 Time (s) 0.1 1 10 TC = +25C, 3.0 W; Thermal resistance RJC = 50C/W FIGURE 5. Thermal impedance graph (RJC) for 2N2218, 2N2218A, 2N2218AL, 2N2219, 2N2219A, and 2N2219AL (TO-39 and TO-5). 23 100 MIL-PRF-19500/251T NOTES: 1. The rise time (tr) of the applied pulse shall be 2.0 ns, duty cycle 2 percent and the generator source impedance shall be 50 ohms. 2. Sampling oscilloscope: Zin 100 K ohms, Cin 12 pF, rise time .2 ns. FIGURE 6. Saturated turn-on switching time test circuit. NOTES: 1. The rise time (tr) of the applied pulse shall be 2.0 ns, duty cycle 2 percent and the generator source impedance shall be 50 ohms. 2. Sampling oscilloscope: Zin 100 K ohms, Cin 12 pF, rise time .2 ns. FIGURE 7. Saturated turn-off switching time test circuit. 24 MIL-PRF-19500/251T 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or within the Military Service's system commands. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. The notes specified in MIL-PRF-19500 are applicable to this specification.) 6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. * 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of this specification. b. Packaging requirements (see 5.1). c. Lead finish (see 3.4.1). * d. The complete PIN, see 1.5 and 6.4. e. For acquisition of RHA designed devices, table II, subgroup 1 testing of group D is optional. If subgroup 1 testing is desired, it must be specified in the contract. * 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from DLA Land and Maritime, ATTN: /VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil . An online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at https://assist.dla.mil. * 6.4 PIN construction example. The PINs for encapsulated devices are construction using the following form. JANTXV R JAN brand and quality level (see 1.5.1) RHA designator, if applicable (see 1.5.2) Component designation (see 1.5.3.1) Identification number (see 1.5.3.2) Suffix (see 1.5.4) 25 2N 2218 A MIL-PRF-19500/251T * 6.5 List of PINs. The following is a list of possible PINs available on this specification sheet. PINs for types 2N2218, and 2N2219 JAN2N2218 JANTXV2N2218 JANTXVR2N2218 JANS#2N2218 (1) JAN2N2218A JANTXV2N2218A JANTXVR2N2218A JANS#2N2218A (1) JAN2N2218AL JANTXV2N2218AL JANTXVR2N2218AL JANS#2N2218AL (1) JAN2N2219 JANTXV2N2219 JANTXVR2N2219 JANS#2N2219 (1) JAN2N2219A JANTXV2N2219A JANTXVR2N2219A JANS#2N2219A (1) JAN2N2219AL JANTXV2N2219AL JANTXVR2N2219AL JANS#2N2219AL (1) JANTX2N2218 JANS2N2218 JANTXVF2N2218 JANTX2N2218A JANS2N2218A JANTXVF2N2218A JANTX2N2218AL JANS2N2218AL JANTXVF2N2218AL JANTX2N2219 JANS2N2219 JANTXVF2N2219 JANTX2N2219A JANS2N2219A JANTXVF2N2219A JANTX2N2219AL JANS2N2219AL JANTXVF2N2219AL (1) The # represents one of eight RHA designators available (M, D, P, L, R, F, G, or H). * 6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the previous issue. Custodians: Army - CR Navy - EC Air Force - 85 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-2015-018) Review activities: Army - AR, MI, SM Navy - AS, MC, SH Air Force - 19, 71, 99 * NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSIST Online database at https://assist.dla.mil . 26