GRP-DATA-JANS2N2219A - Semicoa Semiconductors

MIL-PRF-19500/251T

25 June 2015

SUPERSEDING

MIL-PRF-19500/251R

12 May 2010

PERFORMANCE SPECIFICATION SHEET

* TRANSISTOR, NPN, SILICON, SWITCHING,

TYPES 2N2218, AND 2N2219, JAN, JANTX, JANTXV, AND JANS

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors. Four

levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-

PRF-19500. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to

identify devices, which have passed RHA requirements.

* 1.2 Package out l ine s. The device packages for the encapsulated device types are as follows: TO-39 and TO-5 in

accordance with figure 1

1.3 Maximum ratings unless otherwise specified TA = +25°C.

Types

PT

TA = +25°C

(1)

PT

TC = +25°C

(1)

VCBO

VCEO

VEBO

IC

TSTG

and TJ

RθJC

max

(2)

RθJA

max

(2)

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

W

0.8

W

3.0

V dc

60

75

V dc

30

50

V dc

5

6

mA dc

800

For all

-65° to

+200°C

°C/W

50

°C/W

195

(1) See derating curve, figures 2 and 3.

(2) For thermal impedance curves, see figur e s 4 and 5.

AMSC N/A FSC 5961

INCH-POUND

* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,

ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil . Since

contact information can change, you may want to verify the currency of this address information using the

ASSIST Online database at https://assist.dla.mil .

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 25 September 2015.

MIL-PRF-19500/251T

2

1.4 Primary electrical chara ct erist ic s.

Types

hFE at VCE = 10 V dc

hFE1

IC = 100 µA dc

hFE2

IC = 1.0 mA dc

hFE3

IC = 10 mA dc

hFE4 (1)

IC = 150 mA dc

hFE5 (1)

IC = 500 mA dc

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

2N2218

20

25

150

35

40

120

20

2N2219

35

50

325

75

100

300

30

2N2218A

30

35

150

40

120

20

2N2219A

50

75

325

100

300

30

2N2218AL

30

35

150

40

120

20

2N2219AL

50

75

325

100

300

30

| h

fe

|

C

obo

Switching

Types

IC = 20 mA dc

VCE = 20 V dc

f = 100 MHz

IE = 0, VCE = 10 V dc

100 kHz ≤ f ≤ 1 MHz ton

toff

pF

ns

Min

Max

Min

Max

Min

Max

Min

Max

2N2218

2N2219

2.5

12.0

8

40

250

2N2218A

2N2219A

2.5

12.0

8

35

300

2N2218AL

2N2219AL

2.5

12.0

8

35

300

Types

VCE(sat)1 (1)

IC = 150 mA dc

IB = 15 mA dc

VCE(sat)2 (1)

IC = 500 mA dc

IB = 50 mA dc

VBE(sat)1 (1)

IC = 150 mA dc

IB = 15 mA dc

VBE(sat)2 (1)

IC = 500 mA dc

IB = 50 mA dc

V dc

min

max

min

max

min

max

min

max

2N2218

2N2219

0.4

1.6

0.6

1.3

2.6

2N2218A

2N2219A

0.3

1.0

0.6

1.2

2.0

2N2218AL

2N2219AL

0.3

1.0

0.6

1.2

2.0

(1) Pulsed (see 4.5.1).

MIL-PRF-19500/251T

3

Dimensions

Symbol

Inches

Millimeters

Note

Min

Max

Min

Max

CD

.305

.335

7.75

8.51

CH

.240

.260

6.10

6.60

HD

.335

.370

8.51

9.40

LC

.200 TP

5.08 TP

7

LD

.016

.019

0.41

0.48

8,9

LL

See note 14

LU

.016

.019

0.41

0.48

8,9

L1

.050

1.27

8,9

L2

.250

6.35

8,9

P

.100

2.54

7

Q

.030

0.76

5

TL

.029

.045

0.74

1.14

3,4

TW

.028

.034

0.71

0.86

3

r

.010

0.25

10

α

45° TP

7

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.

7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shal l

be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to

tab at MMC.

8. Dimension LU applies between L1 and L2. Dimension LD appl ies betw een L 2 and LL minimum. Diameter

is uncontrolled in L1 and beyond LL minimum.

9. All three leads.

10. The collector shall be internally connected to the case.

11. Dimension r (radius) applies to both inside corners of tab.

12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

14. For L suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max.

For non-L suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max.

FIGURE 1. Physical dimensio ns (sim ilar t o TO -39, TO-5).

MIL-PRF-19500/251T

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* 1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-19500, and as specified herein.

See 6.4 for PIN construction example, 6.5 for a list of available PINs.

* 1.5.1 JAN certification mark and quality level.

* 1.5.1.1 Quality level designators for encapsulated devices. The quality level designators for encapsulated devices

that are applicable for this specification sheet from the lowest to the highest level are as follows: The base quality

level "JAN", "JANTX" “JANTXV”, and "JANS".

* 1.5.2 Radi ation hardness as s urance (RHA) designator. The RHA levels that are applicable for this specification

sheet from lowest to highest for JANS quality levels are as follows: "M", "D", "P", "L", “R”, “F’, “G”, and “H”. The RHA

levels that are applicable for this specification sheet from lowest to highest for JANTXV quality levels are as follows:

"R”, and “F”.

* 1.5.3 Dev ice ty pe. The designation system for the device types covered by this specification sheet are as follows.

* 1.5.3.1 First number and first letter symbols. The transistors of this specification sheet use the first number and

letter symbols "2N".

* 1.5.3.2 Second number symbols. The second number symbols for the transistors covered by this specification

sheet are as follows: "2218” and “2219".

* 1.5.4 Suffix symbols. The following suffix letters are incorporated in the PIN in the order listed in the table as

applicable:

A blank first suffix indicates a TO-39 package, dimension LL = .5 inch (12.70 mm) min. and .750 inch

(19.05 mm) max . (see fi gure 1).

A Indicates alter n ate ele ctr i cal char ac teri sti cs.

L Indicates a TO-5 package, dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max.

(see figure 1).

* 1.5.5 Lead finish. The lead finishes applicable to this specification sheet are listed on QML-19500.

2. APPLICABLE DOCUMENTS

* 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3 and 4 of this

specification, whether or not they are listed.

MIL-PRF-19500/251T

5

2.2 Govern ment document s.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 - Test Methods for Semiconductor Devices.

* (Copies of these documents are available online at http://quicksearch.dla.mil).

2.3 Order of prece den ce. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before

contract aw ard (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbrevia tio ns, sy mbol s, and defi niti ons used herein shall be as

specified in MIL-PRF-19500 and as follows.

PCB ............... Printed circuit board

RθJA ................ Thermal resistan ce jun cti on to ambi ent.

RθJC ................ Thermal resi stan ce jun cti on to cas e.

* 3.4 Interface requirements and physical dimensions. Interface requirements and physical dime ns ion s shal l be as

specified in MIL-PRF-19500, and on figure 1.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

MIL-PRF-19500/251T

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3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test

levels shall be as defined in MIL-PRF-19500.

3.6 Electr ica l perf or man ce ch aract er istics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I.

3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.

3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L,

R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of

abbreviation required).

* 3.9 Workmanship. Sw itchi ng tr ans ist or devices shall be processed in such a manner as to be uniform in quality

and shall be free from other defects that will affect life, serviceability, or appe aran ce.

4. VERIFICATION

4.1 Clas sifi cat ion of insp ect io ns. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and table I and II).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Gro up E qualifi cat ion. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tes ts, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot of this revision to maintain qualification.

MIL-PRF-19500/251T

7

* 4.3 Screening (JAN, JANTXV, JANTX, and JANS levels). Screening shall be in accordance with table E-IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I her e in sha ll not be accep tab le.

Screen

Measurement

JANS level

JANTX and JANTXV levels

(1) 3c

Thermal impedance (see 4.3.2)

9

ICBO2, hFE4

Not applicable

10

48 hours minimum

11

ICBO2; hFE4;

∆ICBO2 = 100 percent of initial value or 5 nA

dc, whichever is greater.

∆hFE4 = ±15 percent

ICBO2, hFE4

12

See 4.3.1

13

Subgroups 2 and 3 of table I herein;

∆ICBO2 = 100 percent of initial value or 5 nA

dc, whichever is greater;

∆hFE4 = ±15 percent

Subgroup 2 of table I herein;

∆ICBO2 = 100 percent

of initial value or 5 nA dc, whichever is

greater; ∆hFE4 = ±15 percent

(1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in

screening requirements for JANTX and JANTXV level devices.

4.3.1 Power burn-in conditions. Power burn-in conditi ons are as follows: VCB = 10 - 30 V dc. Power shall be

applied to achieve TJ = +135°C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.

TA = 25°C ±10°C. With approval of the qualifying activity and preparing activity, alterna te bur n-in criteria (hours, bias

conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels . A justification

demonstrating equivalence is required. In addition, the man u facturing site’ s burn-in data and performance history will

be essential criteria for burn-in modification approval. Use method 3100 of MIL-STD-750 to measure TJ.

4.3.2 Thermal impedance. The thermal impedance shall be perfor med in acc orda nce wit h meth od 3131 of

MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, (and VC where appropriate).

Measurement delay time (tMD) = 70 µs max. See table III, group E, subgroup 4 herein.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened

devices shall be submitted to and pass the requirements of table I, group A1 and A2 inspection only (table E-VIb,

group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with

4.4.2 herein).

4.4.1 Gro up A inspe ctio n. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

herein.

MIL-PRF-19500/251T

8

* 4.4.2 Gro up B inspe ctio n. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup test ing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. See 4.4.2.2 for JAN, JANTX, and JANTXV

group B testing.

4.4.2.1 Group B inspection (JANS), table E-VIa of MIL-PRF-19500.

Subgroup Method Condition

B4 1037 VCB = 10 V dc, adjust device current, or power, to achieve a minimum ∆TJ of +100°C.

B5 1027 VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure occurs,

resubmission shall be at the test conditions of the original sample.)

Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500, table E-VIa,

adjust TA or PD to achieve TJ = +275°C minimum.

Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve a

TJ = +225°C minimum.

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the

event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addit ion, all catastrophic

failures duri ng CI, (conformance inspection), shall be analyzed to the extent possible to identify root cause and

corrective action. Whenever a failure is identified as wafer lot or wafer processing related, the entire wafer lot and

related devices assembled from the wafer lot s hall be rejected unless an appropriate determined corrective action to

eliminate the failures mode has been implemented and the devices from the wafer lot are screened to eliminate the

failure mode.

Step Method Condition

1 1026 Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be appl ied to achi ev e

TJ = +150°C minim um using a minimum of PD = 75 percent of maximum rated PT as def ined

in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time

decreased as long as the devices are stress ed for a total of 45,000 device hours minimum,

and the actual time of test is at least 340 hours.

2 1048 Blocking life, TA = +150°C, VCB = 80 percent of rated voltage, 48 hours minimum.

n = 45 devices , c = 0.

3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements:

a. For JAN, JANTX, and JANTXV, samples s hall be selected randomly from a minimum of three wafers (or

from each wafer in the lot) from each wafer lot. For JANS, sam ples shall be selected from each inspection lot.

See MIL-PRF-19500.

b. Shall be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2,

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX,

and JANTXV) may be pulled prior to the application of final lead finish.

MIL-PRF-19500/251T

9

* 4.4.3 Gro up C inspec tion , Group C inspection shall be conducted in accordance with the test and conditions

specified for subgroup testi ng in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and

JANTXV) herein for group C testing.

4.4.3.1 Group C inspection (JANS), table E-VII of MIL-PRF-19500.

Subgroup Method Condition

C2 2036 Test condition E.

C5 3131 RθJA and RθJC only, as applicable (see 1.3) and in accordance with thermal impedance

curves.

C6 1026 1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ = +150°C minimum and

a minimum of PD = 75 percent of maximum rated PT as def in ed in 1.3. n = 45, c = 0. The

sample size may be increased and the test time decreased as long as the devices are

stressed for a total of 45,000 device hours minimum, and the actual time of test is at least

340 hours.

4.4.3.2 Group C inspection (JAN, JANTX, and J ANTXV), table E-VII of MIL-PRF-19500.

Subgroup Method Condition

C2 2036 Test condition E.

C5 3131 RθJA and RθJC only, as applicable (see 1.3) and in acc ordan c e w ith thermal imp eda nce

curves.

C6 Not applicable.

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any

inspection lot containing the intended package type and lead finish procured to the same specification which is

submitted to and passes table I tests herein for conformance inspection. When the final lead finish is solder or any

plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of

final lead finish. Tes ting of a subgroup using a single device type enclosed in the intended package type shall be

considered as complying with the requirements for that subgroup.

4.4.4 Gro up D inspec tion . Conformance inspection for hardness assured JANS and JANTXV types shall include

the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ioniz ing do se or method 101 7 of MIL-STD-750 for

neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other

subgroups. Group D inspection may also be performed ahead of the screening lot using die selected in accordance

with MIL-PRF-19500 and related documents. Alternate package options may also be substituted for the testing

provided there is no adverse effect to the fluence profile.

* 4.4.5 Gro up E inspe ctio n. Group E inspection shall be conduc ted in accordance with the conditions specified for

subgroup test ing in table E-IX of MIL-PRF-19500 and as specified in ta ble III herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

MIL-PRF-19500/251T

10

TABLE I. Group A inspection.

Inspecti on 1/

MIL-STD-750

Limit

Unit

Method

Conditions

Symbol

Min

Max

Subgroup 1 2/

Visual and mechanical

examination 3/

2071

n = 45 devices, c = 0

Solderability 3/ 4/

Resistanc e to solvents

3/ 4/ 5/

2026

1022

n = 15 leads, c = 0

n = 15 devices, c = 0

Salt atmosphere (c orrosion)

1041

n = 6 devices, c = 0, (For laser

marked devices only)

Temp cycling 3/ 4/

1051

Test condition C, 25 cycles.

n = 22 devices, c = 0

Hermetic seal 4/ 6/

1071

n = 22 devices, c = 0

Fi ne l eak

Gr oss l eak

Electrical measurements 4/

Table I, subgroup 2

Bond strength 3/ 4/

2037

Precondition

TA = +250°C at t = 24 hours or

TA = +300°C at t = 2 hours

n = 11 wires, c = 0

Decap internal visual (des ign

verification) 4/

2075

n = 4 devices, c = 0

Subgroup 2

Thermal impedance

3131

See 4.3.2

ZθJX

°C/W

Collector to base cutoff current

2N2218, 2N2219

3036

Condition D

VCB = 60 V dc

ICBO1

10

µA dc

2N2218A, 2N2219A

VCB = 75 V dc

10

µA dc

2N2218AL, 2N2219AL

VCB = 75 V dc

10

µA dc

Emitter to base cutoff current

2N2218, 2N2219

3061

Condition D

VEB = 5 V dc

IEBO1

10

µ

A dc

2N2218A, 2N2219A

VEB = 6 V dc

10

µA dc

2N2218AL, 2N2219AL

VEB = 6 V dc

10

µA dc

Breakdown voltage, collector to

emitter

2N2218, 2N2219

3011

Bias condition D; IE = 10 mA dc;

pulsed (see 4.5.1).

V(BR)CEO

30

V dc

2N2218A, 2N2219A

50

V dc

2N2218AL, 2N2219AL

50

V dc

See footnotes at end of table.

*

MIL-PRF-19500/251T

11

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Limit

Unit

Method

Conditions

Symbol

Min

Max

Subgroup 2 - Continued

Collector to emitter cutoff

current

2N2218, 2N2219

3041

Bias condition C

VCE = 30 V dc

ICES

10

nA dc

2N2218A, 2N2219A

VCE = 50 V dc

10

nA dc

2N2218AL, 2N2219AL

VCE = 50 V dc

10

nA dc

Emitter to base cutoff current

3061

Bias condition D; VEB = 4 V dc

IEBO2

10

nA dc

Collector to base cutoff

current

2N2218, 2N2219

3036

Bias condition D

VCB = 50 V dc

ICBO2

10

nA dc

2N2218A, 2N2219A

VCB = 60 V dc

10

nA dc

2N2218AL, 2N2219AL

VCB = 60 V dc

10

nA dc

Forward-current transf er rat i o

3076

VCE = 10 V dc; IC = 0.1 mA dc;

pulsed (see 4.5.1)

hFE1

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

20

35

30

50

Forward-current transf er rat i o

3076

VCE = 10 V dc; IC = 1.0 mA dc;

pulsed (see 4.5.1)

hFE2

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

25

50

35

75

150

325

150

325

Forward-current transf er rat i o

3076

VCE = 10 V dc; IC = 10 mA dc;

pulsed (see 4.5.1)

hFE3

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

35

75

40

100

Forward-current transf er rat i o

3076

VCE = 10 V dc; IC = 150 mA dc;

pulsed (see 4.5.1)

hFE4

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

40

100

40

100

120

300

120

300

Forward-current transf er

ratio

3076

VCE = 10 V dc; IC = 500 mA dc;

pulsed (see 4.5.1)

hFE5

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

20

30

20

30

See footnotes at end of table.

MIL-PRF-19500/251T

12

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Limit

Unit

Method

Conditions

Symbol

Min

Max

Subgroup 2 - Continued

Collector-e mitter saturation

voltage

3071

IC = 1 50 mA dc; IB = 15 mA dc;

pulsed (see 4.5.1)

VCE(sat)1

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

0.4

0.3

V dc

Collector-emitter saturation

voltage

3071

IC = 5 00 mA dc; IB = 50 mA dc;

pulsed (see 4.5.1)

VCE(sat)2

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

1.6

1.0

V dc

Base-emitt er saturati on

voltage

3066

Test condition A; IC = 150 mA dc;

IB = 15 mA dc; pulsed (see 4.5.1)

VBE(sat)1

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

0.6

1.3

1.2

V dc

Base-emitt er saturati on

voltage

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

3066

Test condition A; IC = 500 mA dc;

IB = 50 mA dc; pulsed (see 4.5.1)

VBE(sat)2

2.6

2.0

V dc

Subgroup 3

High temperature operation

TA = +150°C

Collector to base cutoff

current

3036

Bias condition D

ICBO3

10

µA dc

2N2218, 2N2219

VCB = 50 V dc

2N2218A, 2N2219A

VCB = 60 V dc

2N2218AL, 2N2219AL

VCB = 60 V dc

Low temperature operat i on

TA = -55°C

Forward-current transf er rat i o

3076

VCE = 10 V dc; IC = 10 mA dc

hFE6

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

15

35

See footnotes at end of table.

MIL-PRF-19500/251T

13

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Limit

Unit

Method

Conditions

Symbol

Min

Max

Subgroup 4

Magnitude of common emitter

small-signal short- circuit

forward current trans f er ratio

3306

VCE = 20 V dc; IC = 20 mA dc;

f = 100 MHz hfe

2.5

12

Small-signal short-circuit

forward current trans f er ratio

3206

VCE = 10 V dc; IC = 1 mA dc;

f = 1 kHz

hfe

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

25

50

35

75

Open circuit output

capacitance

3236

VCB = 10 V dc; IE = 0;

100 kHz ≤ f ≤ 1 MHz Cobo

8

pF

Open circuit output

capacitance

3240

VEB = 0.5 V dc; IC = 0;

100 kHz ≤ f ≤ 1 MHz Cibo

25

pF

Saturated turn-on time

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

(See figure 6)

ton

40

35

ns

Saturated turn-off time

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

(See figure 7)

toff

250

300

ns

Subgroups 5 and 6

Not applicable

1/ For sampling pla n see MIL-PRF-19500.

2/ For resubmission of failed test in subgroup 1 of table I, double the sample size of the fail ed te st or sequen ce

of tests. A failure in table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test

shall be rerun upon submission.

3/ Separate samples may be used .

4/ Not required for JANS devices.

5/ Not required for laser marked devices.

6/ This hermetic seal test is an end-point to temp-cyc ling in addition to elec tr ic al mea sure ment s.

MIL-PRF-19500/251T

14

TABLE II. Group D inspection.

Inspecti on 1/ 2/ 3/

MIL-STD-750

Limit

Unit

Method

Conditions

Symbol

Min

Max

Subgroup 1 4/

Neutron irradiati on

1017

Neutron exposure VCES = 0 V

Collector to base cutoff current

2N2218, 2N2219

3036

Condition D

VCB = 60 V dc

ICBO1

20

µ

A dc

2N2218A, 2N2219A

VCB = 75 V dc

20

µA dc

2N2218AL, 2N2219AL

VCB = 75 V dc

20

µA dc

Emitter to base cutoff current

2N2218, 2N2219

3061

Condition D

VEB = 5 V dc

IEBO1

20

µ

A dc

2N2218A, 2N2219A

VEB = 6 V dc

20

µA dc

2N2218AL, 2N2219AL

VEB = 6 V dc

20

µA dc

Breakdown voltage, collector to

emitter

2N2218, 2N2219

3011

Bias condition D; IE = 10 mA dc;

pulsed (see 4.5.1).

V(BR)CEO

30

V dc

2N2218A, 2N2219A

50

V dc

2N2218AL, 2N2219AL

50

V dc

Collector to emitter cutoff

current

2N2218, 2N2219

3041

Bias condition C

VCE = 30 V dc

ICES

20

nA dc

2N2218A, 2N2219A

VCE = 50 V dc

20

nA dc

2N2218AL, 2N2219AL

VCE = 50 V dc

20

nA dc

Emitter to base cutoff current

3061

Bias condition D; VEB = 4 V dc

IEBO2

20

nA dc

Collector to base cutoff current

2N2218, 2N2219

3036

Bias condition D

VCB = 50 V dc

ICBO2

20

nA dc

2N2218A, 2N2219A

VCB = 60 V dc

20

nA dc

2N2218AL, 2N2219AL

VCB = 60 V dc

20

nA dc

Forward-current transf er rat i o

3076

VCE = 10 V dc; IC = 0.1 mA dc;

pulsed (see 4.5.1)

[hFE1]

5/

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

[10]

[17.5]

[15]

[25]

Forward-current transf er rat i o

3076

VCE = 10 V dc; IC = 1.0 mA dc;

pulsed (see 4.5.1)

[hFE2]

5/

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

[12.5]

[25]

[17.5]

[37.5]

150

325

150

325

See footnotes at end of table.

MIL-PRF-19500/251T

15

TABLE II. Group D inspection - Continued.

Inspecti on 1/ 2/ 3/

MIL-STD-750

Limit

Unit

Method

Conditions

Symbol

Min

Max

Subgroup 1 - Continued.

Forward-current transf er rat i o

3076

VCE = 10 V dc; IC = 10 mA dc;

pulsed (see 4.5.1)

[hFE3] 5/

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

[17.5]

[37.5]

[20]

[50]

Forward-current transf er rat i o

3076

VCE = 10 V dc; IC = 150 mA dc;

pulsed (see 4.5.1)

[hFE4]

5/

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

[20]

[50]

[20]

[50]

120

300

120

300

Forward-current transf er ratio

3076

VCE = 10 V dc; IC = 500 mA dc;

pulsed (see 4.5.1)

[hFE5]

5/

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

[10]

[15]

[10]

[15]

Collector-e mitter saturation

voltage

3071

IC = 1 50 mA dc; IB = 15 mA dc;

pulsed (see 4.5.1)

VCE(sat)1

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

0.46

0.35

V dc

Collector-emitter saturation

voltage

3071

IC = 5 00 mA dc; IB = 50 mA dc;

pulsed (see 4.5.1)

VCE(sat)2

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

1.84

1.15

V dc

Base-emitt er saturati on voltage

3066

Test condition A; IC = 150 mA dc;

IB = 15 mA dc; pulsed (see 4.5.1)

VBE(sat)1

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

0.6

1.50

1.38

V dc

Base-emitt er saturati on voltage

3066

Test condition A; IC = 500 mA dc;

IB = 50 mA dc; pulsed (see 4.5.1)

VBE(sat)2

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

3.0

2.3

V dc

See footnotes at end of table.

MIL-PRF-19500/251T

16

TABLE II. Group D inspection - Continued.

Inspecti on 1/ 2/ 3/

MIL-STD-750

Limit

Unit

Method

Conditions

Symbol

Min

Max

Subgroup 2

Total dose irradiation

1019

Gamma exposure

2N2218, 2N2219

VCES = 24 V

2N2218A, 2N2219A

VCES = 40 V

2N2218AL, 2N2219AL

VCES = 40 V

Collector to base cutoff current

2N2218, 2N2219

3036

Condition D

VCB = 60 V dc

ICBO1

20

µA dc

2N2218A, 2N2219A

VCB = 75 V dc

20

µA dc

2N2218AL, 2N2219AL

VCB = 75 V dc

20

µA dc

Emitter to base cutoff current

2N2218, 2N2219

3061

Condition D

VEB = 5 V dc

IEBO1

20

µ

A dc

2N2218A, 2N2219A

VEB = 6 V dc

20

µA dc

2N2218AL, 2N2219AL

VEB = 6 V dc

20

µA dc

Breakdown voltage, collector to

emitter

2N2218, 2N2219

3011

Bias condition D; IE = 10 mA dc;

pulsed (see 4.5.1).

V(BR)CEO

30

V dc

2N2218A, 2N2219A

50

V dc

2N2218AL, 2N2219AL

50

V dc

Collector to emitter cutoff

current

2N2218, 2N2219

3041

Bias condition C

VCE = 30 V dc

ICES

20

nA dc

2N2218A, 2N2219A

VCE = 50 V dc

20

nA dc

2N2218AL, 2N2219AL

VCE = 50 V dc

20

nA dc

Emitter to base cutoff current

3061

Bias condition D; VEB = 4 V dc

IEBO2

20

nA dc

Collector to base cutoff current

2N2218, 2N2219

3036

Bias condition D

VCB = 50 V dc

ICBO2

20

nA dc

2N2218A, 2N2219A

VCB = 60 V dc

20

nA dc

2N2218AL, 2N2219AL

VCB = 60 V dc

20

nA dc

Forward-current transf er rat i o

3076

VCE = 10 V dc; IC = 0.1 mA dc;

pulsed (see 4.5.1)

[hFE1]

5/

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

[10]

[17.5]

[15]

[25]

Forward-current transf er rat i o

3076

VCE = 10 V dc; IC = 1.0 mA dc;

pulsed (see 4.5.1)

[hFE2]

5/

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

[12.5]

[25]

[17.5]

[37.5]

150

325

150

325

See footnotes at end of table.

MIL-PRF-19500/251T

17

TABLE II. Group D inspection - Continued.

Inspecti on 1/ 2/ 3/

MIL-STD-750

Limit

Unit

Method

Conditions

Symbol

Min

Max

Subgroup 2 - Continued.

Forward-current transf er rat i o

3076

VCE = 10 V dc; IC = 10 mA dc;

pulsed (see 4.5.1)

[hFE3] 5/

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

[17.5]

[37.5]

[20]

[50]

Forward-current transf er rat i o

3076

VCE = 10 V dc; IC = 150 mA dc;

pulsed (see 4.5.1)

[hFE4]

5/

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

[20]

[50]

[20]

[50]

120

300

120

300

Forward-current transf er ratio

3076

VCE = 10 V dc; IC = 500 mA dc;

pulsed (see 4.5.1)

[hFE5]

5/

2N2218

2N2219

2N2218A, 2N2218AL

2N2219A, 2N2219AL

[10]

[15]

[10]

[15]

Collector-e mitter saturation

voltage

3071

IC = 1 50 mA dc; IB = 15 mA dc;

pulsed (see 4.5.1)

VCE(sat)1

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

0.46

0.35

V dc

Collector-emitter saturation

voltage

3071

IC = 5 00 mA dc; IB = 50 mA dc;

pulsed (see 4.5.1)

VCE(sat)2

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

1.84

1.15

V dc

Base-emitt er saturati on voltage

3066

Test condition A; IC = 150 mA dc;

IB = 15 mA dc; pulsed (see 4.5.1)

VBE(sat)1

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

0.6

1.50

1.38

V dc

Base-emitt er saturati on voltage

3066

Test condition A; IC = 500 mA dc;

IB = 50 mA dc; pulsed (see 4.5.1)

VBE(sat)2

2N2218, 2N2219

2N2218A, 2N2219A

2N2218AL, 2N2219AL

3.0

2.3

V dc

See footnotes at end of table.

MIL-PRF-19500/251T

18

TABLE II. Group D inspection - Continued.

1/ Tests to be performed on all devices receiving radiation exposure.

2/ For sampling plan, see MIL-PRF-19500.

3/ Electrical characteristics apply to device types unless otherwise noted.

4/ See 6.2.e herein.

5/ See method 1019 of MIL-STD-750 for how to determine [hFE] by first calc ulat ing the delta (1/hFE) from the

pre- and post-ra diat ion hFE. Notice the [hFE] is not the same as hFE and cannot be measured directly. The [hFE]

value can never exceed the pre-radiation minimum hFE that it is based upon.

MIL-PRF-19500/251T

19

TABLE III. Group E ins pe ctio n (all quality level s) - for qualification or re-qualifi cat ion only .

Inspection

MIL-STD-750

Qualification

Method

Conditions

Subgroup 1

Temperature c ycling

(air to air)

Hermetic seal

Fine leak

Gross leak

Electrical measurements

1051

1071

Test condition C, 500 cycles

See table I, subgroup 2 herein.

45 devices

c = 0

Subgroup 2

45 devices

c = 0

Interm ittent life

1037

VCB = 10 V dc, 6,000 cycles, forced air cooling allowed on

cooling cycle only. Adjust devic e current, or power, to

achieve a minimum ∆TJ of +100°C.

Electrical measurements

Table I, subgroup 2 herein.

Subgroup 4

Thermal impedance curves

See MIL-PRF-19500, table E-IX, group E, subgroup 4.

Subgroup 5

Not applicable

Subgroup 6

Electrostat ic discharge (ESD)

1020

11 devices

Subgroup 8

45 devices

c = 0

Reverse stability

1033

Condition B.

*

MIL-PRF-19500/251T

20

NOTES:

1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at ≤ TJ

specified on this c urve. Any parallel line to this curve wi ll intersect the appropriate power for the desired

maximum TJ allowed.

2. Derate design curve constrained by the maxim um junction temperature (TJ ≤ 200°C) and power rating

specified. (See 1.3 herein.)

3. Derate design curve chosen at TJ ≤ 150°C, where the maximum temperature of electrical test is performed.

4. Derate design curve chosen at TJ ≤ 125°C, and 110°C to show power rating where most users want to limit TJ

in their applicatio n.

FIGURE 2. Derating for 2N2218, 2N2218A, 2N2218AL, 2N2219, 2N2219A,

and 2N2219AL (RθJC) (TO-39 and TO-5).

MIL-PRF-19500/251T

21

NOTES:

1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at ≤ TJ

specified on this c urve. Any parallel line to this curve wi ll intersect the appropriate power for the desired

maximum TJ allowed.

2. Derate design curve constrained by the maxim um junction temperature (TJ ≤ 200°C) and power rating

specified. (See 1.3 herein.)

3. Derate design curve chosen at TJ ≤ 150°C, where the maximum temperature of electrical test is performed.

4. Derate design curve chosen at TJ ≤ 125°C, and 110°C to show power rating where most users want to limit TJ

in their applicatio n.

FIGURE 3. Derating for 2N2218, 2N2218A, 2N2218AL, 2N2219, 2N2219A,

and 2N2219AL (RθJA) (TO-39 and TO-5).

MIL-PRF-19500/251T

22

TA = +25°C, 800 mW, Thermal resistance RθJA = 195°C/W

FIGURE 4. Thermal impedance graph (RθJA) for 2N2218, 2N2218A, 2N2218AL,

2N2219, 2N2219A, and 2N2219AL (TO-39 and TO-5).

MIL-PRF-19500/251T

23

TC = +25°C, 3.0 W; Thermal resistance RθJC = 50°C/W

FIGURE 5. Thermal impedance graph (RθJC) for 2N2218, 2 N 2218A, 2N221 8A L,

2N2219, 2N2219A , and 2N 22 19AL (T O -39 and TO-5).

Maximum Thermal Impedance

1

10

100

0.000001

0.00001

0.0001

0.001

0.01

0.1

1

10

100

Time (s)

Theta (C/W)

MIL-PRF-19500/251T

24

NOTES:

1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent and the ge nerator source

impedance shall be 50 ohms.

2. Sampling oscilloscope: Zin ≥ 100 K ohms, Cin ≤ 12 pF, rise time ≤ .2 ns.

FIGURE 6. Saturated turn-on sw itchin g time t est ci r cu i t .

NOTES:

1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns , duty cycle ≤ 2 perc ent and t he ge nerator

source impedance shall be 50 ohms.

2. Sampl ing os cillos cop e: Z in ≥ 100 K ohms , Cin ≤ 12 pF, rise time ≤ .2 ns.

FIGURE 7. Saturated turn-off switching time test circui t.

MIL-PRF-19500/251T

25

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as s pecified in the contract or order

(see 6.2). When packaging of materiel is to be performed by DoD or in-house contrac tor personnel, these personnel

need to contact the responsible packaging activi ty to ascertain packaging requirements. Packaging requirements are

maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or

within the Military Service’s system commands. Packaging data retrieval is available from the managing Military

Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible

packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.

The notes specified in MIL-PRF-19500 are applicable to this specification.)

6.1 Inten ded use. Semiconductors conforming to this specification are intended for original equipment design

applications and logistic support of existing equipment.

* 6.2 Acqui sit ion requ ir e ment s. Acquisition documents should specify the following:

a. Title, number, and date of this specif ica tio n.

b. Packaging requirements (see 5.1).

c. Lead finish (see 3.4.1).

* d. The complete PIN, see 1.5 and 6.4.

e. For acquisition of RHA designed devices, table II, subgroup 1 testing of group D is optional. If subgroup 1

testing is desired, it must be speci fied in the cont rac t.

* 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,

at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not

such products have actually been so lis ted by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this spec ification. Information pertaining to qualification of products may be obtained from DLA

Land and Maritime, ATTN: /VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil . An

online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at

https://assist.dla.mil.

* 6.4 PIN constr u ctio n ex ample . The PINs for encapsulated devic es are construction using the following form.

JANTXV R 2N 2218 A

JAN brand and quality level (see 1.5.1)

RHA designator, if applicable (see 1.5.2)

Component des ign atio n (see 1.5.3.1)

Identification number (see 1.5.3.2)

Suffix (see 1.5.4)

MIL-PRF-19500/251T

26

* 6.5 List of PINs. The following is a list of poss ible PINs available on this specification s heet.

PINs for types 2N2218, and 2N2219

JAN2N2218 JANTXV2N2218 JANTXVR2N2218 JANS#2N2218 (1)

JAN2N2218A JANTXV2N2218A JANTXVR2N2218A JANS#2N2218A (1)

JAN2N2218AL JANTXV2N2218AL JANTXVR2N2218AL JANS#2N2218AL (1)

JAN2N2219 JANTXV2N2219 JANTXVR2N2219 JANS#2N2219 (1)

JAN2N2219A JANTXV2N2219A JANTXVR2N2219A JANS#2N2219A (1)

JAN2N2219AL JANTXV2N2219AL JANTXVR2N2219AL JANS#2N2219AL (1)

JANTX2N2218 JANS2N2218 JANTXVF2N2218

JANTX2N2218A JANS2N2218A JANTXVF2N2218A

JANTX2N2218AL JANS2N2218AL JANTXVF2N2218AL

JANTX2N2219 JANS2N2219 JANTXVF2N2219

JANTX2N2219A JANS2N2219A JANTXVF2N2219A

JANTX2N2219AL JANS2N2219AL JANTXVF2N2219AL

(1) The # repres ents one of eight RHA designators available (M, D, P, L, R, F, G, or H).

* 6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a c onvenience only and the Government assumes

no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irres pective of the marginal notations and relationship to

the previous issue.

Custodians: Preparing activity:

Army - CR DLA - CC

Navy - EC

Air Force - 85 (Project 5961-2015-018)

NASA - NA

DLA - CC

Review activities:

Army - AR, MI, SM

Navy - AS, MC, SH

Air Force - 19, 71, 99

* NOTE: The activities listed above were interested in this document as of the date of this document. Since

organizations and res ponsibilities can change, you should verify the currency of the information above using the

ASSIST Online database at https://assist.dla.mil .