4/10/03
DUAL CHANNEL PHOTOTRANSISTOR
SMALL OUTLINE SURFACE MOUNT
OPTOCOUPLERS
Page 1 of 8
© 2002 Fairchild Semiconductor Corporation
MOCD213-M
EMITTER 1
COLLECTOR 1
ANODE 1
CATHODE 1
1
2
3
45
6
7
8
EMITTER 2
COLLECTOR 2
ANODE 2
CATHODE 2
DESCRIPTION
The MOCD213-M device consists of two gallium arsenide infrared emitting diodes optically coupled to
two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It
is ideally suited for high density applications and eliminates the need for through-the-board mounting.
FEATURES
•U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD213V-M)
• Dual Channel Coupler
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Minimum Current Transfer Ratio 100% with Input Current of 10 mA
• Minimum BV
CEO
of 70 Volts Guaranteed
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering
• High Input-Output Isolation of 2500 V
AC(rms)
Guaranteed
APPLICATIONS
•Feedback control circuits
• Interfacing and coupling systems of different potentials and impedances
• General purpose switching circuits
• Monitor and detection circuits
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C Unless otherwise specified)
Rating Symbol Value Unit
EMITTER
Forward Current - Continuous I
F
60 mA
Forward Current - Peak (PW = 100 µs, 120 pps) I
F
(pk) 1.0 A
Reverse Voltage V
R
6.0 V
LED Power Dissipation @ T
A
= 25°C P
D
90 mW
Derate above 25°C 0.8 mW/°C
DETECTOR
Collector-Emitter Voltage V
CEO
70 V
Emitter-Collector Voltage V
ECO
7.0 V
Collector Current-Continuous I
C
150 mA
Detector Power Dissipation @ T
A
= 25°C P
D
150 mW
Derate above 25°C 1.76 mW/°C
TOTAL DEVICE
Input-Output Isolation Voltage
(1,2,3)
(f = 60 Hz, 1 min. Duration) V
ISO
2500 Vac(rms)
Total Device Power Dissipation @ T
A
= 25°C P
D
250 mW
Derate above 25°C 2.94 mW/°C
Ambient Operating Temperature Range T
A
-40 to +100 °C
Storage Temperature Range T
stg
-40 to +125 °C