MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MBT3904DWlT1/D DATA -- Dual General Purpose Transistors The MBT3904DW1TI, MBT3906DW1T1, and MBT3946DW1T1 devices are spin-offs of our popular SOT-23/SOT-323 three-leaded devices. They are designed for general purpose amplifier a~~lications and are housed in the SOT-363 six-leaded su~ace mount package. By putting two discrete devices in one package, these devices are ideal for low-power surface mount applications where board space is at a premium. MBT3904DWI T1 MBT3906DWI TI MBT3946DWI T1 hFE, 100-300 LOW vcE(sat), S 0,4 V Simplifies Circuit Design Reduces Board Space Y'!,>$* i~,f,,,, .,'.y$~,{, $.:,,,.: ~1.! .:, "t,+ ,.~, ,~jt>, .$,- i.., Reduces Component Count Available in 8 mm, 7-inch/3,000 Unit Tape and Reel CASE 419B41 , STVLE 1 ~~,,:t. .:.,>.~,~.:,..., , .,. .,,, MBT3904DW1 T1 (3) (2) h+ (1) Q1 (4) (5) Q2 (6) MBT3906DW1T1 (3) (2) (1) Q1 h+ (4) ~. ?. %,~"*acteristic Total Pac~@&b~pation(l TA = ~5G&,~~ ~.>! ,...,r"~'h::. The@al~@istance *,. . :l~hc#&~and ... :.J~t},* ... .*:,$::,, i\:T$ ... ~,*, `:~~':bevice `" Junction to Amtient Storage Temperature mounted on FR4 glass epo~ recommended M= Unit PD 150 mW RgJA 833 `cm TJI Tstg -55 to +150 `c Symbol ) printed circuit board using the minimum footprint. Q2 (5) (6) MBT3946DW1T1* (3) (2) (1) Q1 h+ (4) Q2 (5) (6) DEVICE MARKING MBT3904DW1TI MBT3906DWITI = MA = A2 MBT3946DW1T1 =46 *Q1 same as MBT3906DW1TI Q2 same as MBT3904DWI TI Thermal Clad is a trademark of the Bergquist Company. -- MOTOROLA @ Motorola, Inc. 1996 @ ,,. :, ,' `MBT3904DWITI ELECTRICAL MBT3906DW1T1 CHARACTERISTICS MBT3946DWIT1 (TA = 25C unless otherwise noted) Symbol Characteristic Min Ma Unit -- : OFF CHARACTERISTICS ,, Collector-Emitter Breakdown Voltage(2) (1c = 1.0 mAdc, IB = O) (lc = -1.0 mAdc, IB = O) MBT3904DW1TI (NPN) MBT3906DW1T1 (PNP) Collector-Base Breakdown Voltage (1C= 10 @de, [E = O) (IC = -10 ~Adc, iE = O) MBT3904DW1TI (NPN) MBT3906DW1T1 (PNP) V(BR)CEO Base Cutoff Current (VCE,= 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = -3.0 Vdc) MBT3904DW1T1 (NPN) MBT3906DWIT1 (PNP) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = -30 Vdc, VEB = +.0 Vdc) MBT3904DW1TI (NPN) MBT3906DWIT1 (PNP) DC Current Gain 60 -- -- ~. `.:lii ,,.$ ,,$*::-- .$'~~ ~:.. . ,...4 -50 -- 40 70 100 60 30 -- -- 300 -- -- 60 60 100 60 30 -- -- 300 -- -- VCE(sat) MBT3906DW1T1 (PNP) ,,,.,( -- 4.25 4.4 Vdc 0.65 -- 0.85 0.95 4.65 -- 4.85 +.95 300 250 -- -- ,., MBT3906DW1T1 (PNP) characteristics MHz fT MBT3904DWIT1 (NPN) MBT3906DW1T1 (PNP) Qti& Capacitance `~~~CB = 5.0 Vdc, IE = O,f = 1.0 MHz) " (VCB = -5.0 Vdc, IE = O,f = 1,0 MHz) Input Capacitance (VEB = 0.5 Vdc, Ic = O,f = 1.0 MHz) (VEB = -.5 Vdc, IC = O, f = 1.0 MHz) 2, Pulse Test Pulse Width< 300p; 2 .,:. -- ..' (1c = -10 mAdc, lB~Ml .O'wdc) (Ic = -50 mAdc, ~$$y~9Q mAdc) .' SMALL-SIG*% 0.2 0.3 VBE(sat) (NPN) (IC = 50 mAdc, IB = 5.0 rn,@~:JX# !.1' `,.<:,.i -- -- -- MBT3904DWIT1 -- Vdc : ~\\\\:,.', ... \.~~. `:~!,$lL.,,,,,\ *. *::; .,..&, (Ic ='-10 mAdc, [B = -1.0 rnAdc) .$+~ >.~ (lc = -50 mAdc, IB = -5.0 mAdc) .,,$+$,,,,~ ` . .:., Base-Emitter Saturation Voltagee,, ~:+,, ~ ~ (Ic = 10 mAdc, IB = 1.0 mAdc~''*~~ "''" Vdc *,\ *'X,l, $J,$<,. ,,. ,'~ ,'$:. `!,.,~1+ts., w ~"-':;*& _ "?/i*;$ike..ii. .@,.+i:1~ -5.0 ~ey$>$. ,,,,..~u ,* ~~ ! ,1.* $",.,, ~Jr ,,t.,. IBL `,~i +.,, nAdc . :i,,,;pk$" -- **>' -::'. -- ~:, ~..+`Y -50 *.$, .,: *F. ~~i{, .$:~.i:>}a.,. ..i} nAdc !CEX ,:'":ti ~ ,1`~'~"?t$<' * ~ 50 ,,Jt.-g\ ~*:$$N `f&$QgE MBT3904DWI T1 (NPN) ~f'~':< J,>$~s$ ,,+\',`:;*>, \ (1c = 0.1 mAdc, VCE = 1.0 Vdc) (1c = 1.0 mAdc, VCE = 1.0 Vdc) -- 40 V(BR)EBO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) -- 40 V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 pAdc, [c = O) (lE=-lo@dC,lC=o) Vdc lo Cobo + pF MBT3904DW1TI (NPN) -- MBT3906DW1T1 -- (PNP) I 4.0 4.5 ~bo pF MBT3904DW1T1 (NPN) -- MBT3906DW1T1 -- (PNP) 8.0 10.0 Duty Cycle< 2.070. Motorola Small-Signal Transistors, FETs and Diodes Device Data MBT3904DWITI MBT3906DW1TI MBT3946DWIT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless othewise noted) (Continued) Characteristic -- -- Symbol Input Impedance (VCE = 10 Vdc, Ic = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, Ic = -1.0 mAdc, f = 1,0 kHz) MBT3904DW1 TI (NPN) MBT3906DW1 T1 (PNP) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, Ic = -1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 MBT3906DWIT1 (NPN) (PNP) Small-Signal Current Gain (VCE = 10 Vdc, Ic = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, Ic = -1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 MBT3906DW1T1 (NPN) (PNP) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = -10 Vdc, Ic = -1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 MBT3906DW1T1 (NPN) (PNP) MBT3904DWITI MBT3906DW1T1 (NPN) (PNP) Rise Time (1c = 10 mAdc, IB1 = 1.0 mAdc) (1c = -10 mAdc, IB1 = -1.0 mAdc) Storage Tme (Vcc (Vcc Fall Tme (IB1 = IB2 = 1.0 mAdc) = 3.0 Vdc, VBE = -0.5 Vdc) = -3.0 Vdc, VBE = 0.5 Vdc) 10 12 0.5 8.0 10 kQ x 1o-4 0.1 hfe ~:;:., ~?.$ ~iy !..~$ *.',.<<.t.t,! :, -- /,$r"J',,.> 100 100 hoe >/,s$" ,,,:&j%:;; ..... ., ,\$,.s?,,>...:/., ,,: .:.~.. 1.w$:~$ ,,$.">'40 " 60 ,;~k$'"! \.+\~,+.<\,.?..' ~~ ~?.. ` 5.0 4.0 ` pmhos dB ,,~\\Tt:!,*. .,,.:.$ `.~v. ",,.}+ SWITCHING CHARACTERISTICS (Vcc (Vcc 1,0 2,0 Unit hre NF Delay Time Max hie Noise Figure (VCE = 5.0 Vdc, IC = 100 @de, RS = 1.0 k Q, f = 1.0 kHz) (VCE = -5,0 Vdc, ic = -100 pAdc, Rs = 1.0 k ~, f = 1.0 kHz) Min MBT3904DW1T1 MBT3906DWIT1 (NPN] (P~$$, s\*..,.,`i!..-~'~' `$~,;:fi' ,,*:, -- -- 35 35 tr - -- 35 35 ns = 3,0 Vdc, [c = 10 mAdc) = -3.0 Vdc, Ic = -10 mAdc) (IB1 = 162= -1,0 mAdc) -- MBT3904DWlT~jw+ MBT3906DwJ,T~~A@) MBT390$~W+$~ MBT3%,WIT1 ,* (NPN) (PNP) ts -- -- 200 225 M~~39~DWlTl (NPN) tf - 50 -- 75 ,,,,h;pDWITl `<'L `"" ns (PNP) -- Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 `~MBT3904DWlTl MBT3946DWITI MBT3906DW111 MBT3904DW1T1 (NPN) ,, t3 v t3 v DUW'CYCLE ,, = 2% lo<tj k" 300 ns+ m- "09 v ! 275 <500@+ tl l~+109v DUTY CYCLE =2% -- I -- 275 n .,'s. . .. . ~t>:\ Ts:r5000 \,.;',,. 3000 - fin"" L 70 ,,. ---- 0.1 4 50 0.2 0.3 Q.~:~&l.O 2.0 3.0 5.071010 203040 I I I I I I I I I I I I I I I I I 1 I I II 1 1$ 1.0 2.0 3.0 Motorola Small-Signal 5.07.0 Transistors, II 10 I I ~t "cc =40 v l~!B = 10 I I I { I II MBT3904DW1T1 I 1 t k I ! 1 I >1 xl i LI I 20 30 I I I (NPN) ~ 11 1111 50 70 100 i I J 200 FETs and Diodes Device Data MBT3904DW1TI MBT3904DWIT1 MBT3906DW1T1 MBT3946DW1TI (NPN) 500 5001<< I 1 I I 111111 I I I I J 300 200 100 70 70 50 En I I I I I !~ 30 20 10 !, 7~ I I ! I I ! I "d"voi=o~ -1.0 2,0 :3.0 5.07.010 20 30 50 70100 200 Ic, COLLECTOR CURRENT (mA) Figure 5. Turn-On 500 I Time I 1 [11 I 300 [~1B=20& 200 1 I 1 11 1 r~ = t~- l/8 tf - IB1 = 1B2 l~lB=lo\ I I I I I I t I ! 1!! I I I I -- IT i~lB=10' -. 10 -- 10 I I 7 5 I 1.0 I 2,0 I 3,0 I I I 1111 1 1 7 E `1.0 I 5.07.010 20 30 ,f#b.?&iOo 200 sn 20 9n 5n7nin Qn Fn 7n 9nn inn 14 12 10 8 L- 2 lc=100~A o 0.1 0.2 0,4 1.0 2,0 4.0 , MBT3904DW1TI (NPN) Ill I I I I 1111 10 20 40 100 I 1 1 I I 1 1 11 1 m n -0.1 0.2 0,4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Figure 10. Noise Figure Motorola Small-Signal Transistors, FETs and Diodes Device Data 40 100 5 `, MBT3904DW1T1 ,, M"BT3906DW1T1 MBT3946DW1T1 MBT3904DWIT1 (NPN) h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA ='25C) -- -- Ic, COLLECTOR CURRENT (mA) Figure 11. Current Gain I ! I 1 1 1 1 1 I I t ,, I MBT3904DW1TI I I I (NPN) I 1111 -- . I I I I I I I I Ill I -- I lc, COLLECTOR C@#E,@fi~) Ic, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio -- -- ,, 6' Motorola Small-Signal Transistors, FETs and Diodes Device Data MBT3904DWIT1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1 T1 (NPN) TVPICAL STATIC CHARACTERISTICS 2!0 -- 1.0 0.7 0.5 0.3 0.2 0.1 0 .:1, .,h$.*.,~j,>.,,. ~$,!.,~, .Y,$"" lc, COLLECTORCURRENT(mA) ":p"v::. `~(::k~' Figure 15. DC Current Gain -- -- , , ,.., ., ,, .,., ....>., .-,,,. 1.0 I I I 1 MBT3904DW1T1(NPN) I 0.5 I +25C TO t125C -- I -55C TO t25C I I - 55C TO t25C I t25C TO t125C -- -1.5 -9 -." n Y 0 20 40 60 80 100 120 140 160 180 200 Ic, COLLECTORCURRENT(mA) Ic, COLLECTORCURRENT(mA) Figure 18. Temperature Figure 17. "ON" Voltages Coefficients -- Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 :. ,. MBT3904DW1T1 MBT3906DW1T1 MBT3946DWIT1 MBT3906DW1T1 (PNP) -- -- ,$,,,::8, \.~'::,:k,.<> Figure 20. Storage ~ ~'~fime Equivalent T@t C*~uit Figure 19. Delay and Rise Time Equivalent Test Circuit VT CHARACTERISTIS ,1 5 ~nl `1,01 0.1 I I I 1 I I ! ! I!ll I I I 1! 1111 0.2 0,3 0.50,71.0 I I IN II II I I .... 500 I I I I I I 1 1 I I I I ,, I I 1111 -- I 41A 1 70 I , . ,,`. I I ..4,,,lull .2.0 3.fJ\ 5.$7:010 ..$;? .,. u 5 `"*' 1 1 I I 1 I 1 1 11 I I II I I I 50 20 3040 1.0 2.0 3.0 5.07,0 10 20 30 50 70'100 REVERSE Bf~''~t~') Ic, COLLECTOR CURRENT (mA) Figure ~J~p~cltance ,.O Figure 22. Charge Data ?,;b!:..`]?S>r. ,-*. . 500 I I Ill I I MBT3906DWIT1 300 200 I I I I I Ill 100 200 I I 11111 I (PNP) _ _vcc=40v _ IB1 = 1B2 1 1 I 1 1/ t 1 20 30 I I I I I II I 70 50 30 20 1 I -1,0 1 1 I I 2.0 3!0 I I I I 1 1 )11 I 1111 5.07.010 ~@v~20 "'J 30 10 z 50 70100 200 7 5 1.0 2.0 3,0 5.07.0 10 50 70100 Ic, COLLECTOR CURRENT (mA) Ic, COLLECTOR CURRENT (mA) Figure 23. Turn-On Time Figure 24. Fall Time 200 ,, ,8 ,, Motorola Small-Signal Transistors, FETs and Diodes Device Data -- MBT3904DW1TI MBT3906DW1TI MBT3906DWIT1 MBT3946DW1T1 (PNP) TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = -5.0 Vdc, TA = 25"C, Bandwidth = 1.0 Hz) -- 12 I I I I I - f=l.OkHz I 10 I - I I 1111111/ Ic=l.om I I [ I I A I 111111 I t I I I 1111111 Ic I 8 6 4 2 -0.1 0.2 1.0 0.4 2.0 4.0 10 20 100 40 f, FREQUENCY (kHz) Figure 26. Figure 25. 100 70 -- 50 -- 30 20 10 7 K "0.1 ,,J lc~*~ECTOR I I I I I I 0.2 0.3 I I II I I 0.5 0.7 1.0 I I I I 1111 I 2,0 3.0 5.0 7.0 10 Ic,COLLECTOR CURRENT (mA) CURRENT (mA) Figure 28. Output Admittance 1 % 1 I 1 I I I I I I II I 1 1 1 1 1 I I 1> ~ 1.0 z n? -- I I I I 1 1 I I 1 1 1 I 1 I ml , , I , I , I , I , r WI I I $ U.t I I II 1 I 1 1 , , I IN ~~ 0.5 0.3 0.2 . .-- 0.1 Motorola 0.2 0.3 0.5 0.7 1.0 2,0 3.0 5.0 7.0 10 c= `""0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Ic, COLLECTOR CURRENT (mA) Ic, COLLECTOR CURRENT (mA) Figure 29. Input Impedance Figure 30. Voltage Feedback Ratio Small-Signal Transistors, FETs and Diodes Device Data 9 MBT3904DWIT1 MBT3906DW1T1 MBT3946DW1T1 MBT3906DW1T1 TYPICAL (PNP) STATIC CHARACTERISTICS -- -- -- -- -55C TO t25C .- MBT3906DWIT1 (PNP) I \ .I , -55C TO t25C -- -8VBFORVBE(~at) I I I 5 1.0 10 2.0 5,0 10 20 50 100 m 200 -2,0 / o 20 40 60 80 100 120 140 160 Ic,COLLECTORCURRENT (mA) Ic,COLLECTOR CURRENT (mA) Hgure 33. "ON" Voltages Hgure 34. Temperature Coefficients Motorola Small-Signal Transistors, FETs and Diodes Device 180 200 Data MBT3904DW1TI INFORMATION FOR USING THE SOT-363 MINIMUM RECOMMENDED FOOTPRINT Sutiace mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection -- The pad size. -- PD can be calculated as follows: <i,"k~~ ~ \.t,~\:\ `*?::.% ,,>;? J MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. Always preheat the device. "'.]> The values for ~he'$~.@tion are found in the maximum ratings table on ~,data sheet. Substituting these values into the equationJo~~#tibient temperature TA of 25C, one can ,,,>i~$ calculate,~~~:,,~~er dissipation of the device which in this case isit~+~~i watts. *,:,?*U. ?i~,,, ,,*.. `"*S.., ,1. :~< ..:.y,~i.. ~j~ik,,h. -- SURFACE MOUNT PACKAGE FOR SURFACE ,1.:: { MBT3946DW1T1 This can vary from the minimum pad size f&#$::,'"s' soldering to a pad size given for maximum power di~ipatin. Power dissipation for a surface mount device is,$~~{rnined by TJ(max), the maximum rated junction tem~(~~reof the die, R8JA, the thermal resistance from the,@,~~.junction to `\~\<" ambient, and the operating tempera&$~$-j~#. Using the values provided on the data sheet for@~@7-363 package, -- MBT3906DW1TI The833CM for the SOT-363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad'". Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. Motorola Small-Signal Transistors, FETs and Diodes Device Data The delta temperature between the preheat and soldering should be 10OC or less.* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. The soldering temperature and time shall not exceed 260C for more than 10 seconds. When shiting from preheating to soldering, the maximum temperature gradient shall be 5C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling. Soldering a device without preheating can cause excessive thermal sh;ck and stress which can result in damage to the device. 11 .:.' .! ,' MBT3g04DtilTl MBT3906DWIT1 MBT3946DWIT1 PAC~GE DIMENSIONS -- -- ,- ,-". 1. DIMENSIONING Y14.5M, 1962, 2, CO~ROLLING ANO ~LERANCING OIMENSION PER ANSI INCH. s I m -- appticati~s. ~1 Operatingparameters, includng Typicals" must be vatidated for each customer application by customer's technical experts. Motorola does not _dy;@ Iicenae under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in sy_:*nded for surgical implant into the body, or other apphcations intended to support or sustain life, or for any other application in which the failure of :~,lwrola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such $~~dedor unauthorized appticafion, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and diatributora hamless ~nat all claims, costs, damages, and,expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of parsonal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part, Motorola and @ are registered trademarks of Motorola, Inc. Motorola, Inc. ie an Equal Oppotiunity/Affirmative Action Employer. @ How to reach us USA/EUROPE MotorolaLiteratureDistrfbtio~ P.O.Box 20913 Phoenix,Arizona 65~. 14WI-247 JAPAN:Mppon MotorolaLtd; TafsumWPNLDC, ToshkatsuOkuh, 6FSeibAutsu@entar,%142 TatsumiKottiu, To@oIW, Japan. 0~21+15 MF~: RMFAXO@email.sps.mot.com -TOUCHTONE (602) 2INTERNEE http//Design-N~.com' HONG KONG. MotorolaSemicond@om H.K. Ltd; 6B Tsi Ping lndutid 51 Tng Kok Road, Tti Po, N.T, Hong King. 652-26629298 MOTOROLA Pak, -- ~ ,, ,,', llllllllllllllllllllillllllllllllllllllllllllllllllllllltifiitiii