© 2018 IXYS CORPORATION, All Rights Reserved DS100853B(4/18)
IXFP72N30X3
IXFQ72N30X3
IXFH72N30X3
VDSS = 300V
ID25 = 72A
RDS(on)
19m
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 300 V
VGS(th) VDS = VGS, ID = 1.5mA 2.5 4.5 V
IGSS VGS = 20V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 5 A
TJ = 125C 750 A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 15 19 m
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 300 V
VDGR TJ= 25C to 150C, RGS = 1M300 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C72A
IDM TC= 25C, Pulse Width Limited by TJM 150 A
IATC= 25C36A
EAS TC= 25C1J
dv/dt IS IDM, VDD VDSS, TJ 150°C 20 V/ns
PDTC= 25C 390 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque 1.13 / 10 Nm/lb.in
Weight TO-220 3.0 g
TO-3P 5.5 g
TO-247 6.0 g
N-Channel Enhancement Mode
Avalance Rated
X3-Class HiPerFETTM
Power MOSFET
Preliminary Technical Information
GDS
TO-220AB (IXFP)
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
SD (Tab)
D
G
DS
D (Tab)
D (Tab)
TO-3P (IXFQ)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP72N30X3 IXFQ72N30X3
IXFH72N30X3
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 72 A
ISM Repetitive, pulse Width Limited by TJM 288 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 100 ns
QRM 750 nC
IRM 15 A
IF = 36A, -di/dt = 100A/μs
VR = 100V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 36 60 S
RGi Gate Input Resistance 1.7
Ciss 5400 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 800 pF
Crss 2 pF
Co(er) 310 pF
Co(tr) 1200 pF
td(on) 22 ns
tr 25 ns
td(off) 86 ns
tf 11 ns
Qg(on) 82 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 25 nC
Qgd 25 nC
RthJC 0.32 C/W
RthCS TO-220 0.50 C/W
TO-247 & TO-3P 0.25 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5 (External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2018 IXYS CORPORATION, All Rights Reserved
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
10
20
30
40
50
60
70
80
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
7V
5V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
10
20
30
40
50
60
70
80
00.511.522.53
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
6V
5V
4V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 36A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 36A
I
D
= 72A
Fig. 5. R
DS(on)
Normalized to I
D
= 36A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 50 100 150 200 250
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
300
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
8V
9V
5V
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
- Degrees Centigrade
BV
DSS
/ V
GS(th)
- Normalized
BV
DSS
V
GS(th)
IXFP72N30X3 IXFQ72N30X3
IXFH72N30X3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP72N30X3 IXFQ72N30X3
IXFH72N30X3
Fig. 8. Input Admittance
0
20
40
60
80
100
120
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
V
DS
= 10V
Fig. 7. Maximum Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 9. Transconductance
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
25
o
C
125
o
C
V
DS
= 10V
Fig. 10. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 11. Gate Charge
0
2
4
6
8
10
0 102030405060708090
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 150V
I
D
= 36A
I
G
= 10mA
Fig. 12. Capacitance
1
10
100
1,000
10,000
100,000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
© 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_72N30X3(25-S301) 7-18-17
Fig. 15. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 14. Forward-Bias Safe Operating Area
0.01
0.1
1
10
100
1000
1 10 100 1,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Sin
g
le Pulse
25μs
100μs
R
DS(
on
)
Limit
1ms
10ms
DC
Fig. 13. Output Capacitance Stored Energy
0
2
4
6
8
10
12
14
0 50 100 150 200 250 300
V
DS
- Volts
E
OSS
- MicroJoules
IXFP72N30X3 IXFQ72N30X3
IXFH72N30X3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP72N30X3 IXFQ72N30X3
IXFH72N30X3
TO-3P Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
E
D1
E1
D2
A1
L1
P1
B
A
b
b2
b4
R
D
L
e
S
A
D
C
Q
1 2 3
4
A2