2SB1424 Transistor, PNP Features Dimensions (Units : mm) " SSERCRNETPTSOTS sou + +0.2 * package marking: 2SB1424; AEx, GSE aOL 102 2 where * is hee code | i mt at * low collector saturation voltage, 24] 3 it 20 typically \GE(sat) =-0.5V (max) for =| a J) ay [} 401 ibs Ic/lp = =-2A/-0.1 0.4201 3204 0.4201 as QICT * excellent current-to-gain =i s0T pte 0 rst characteristics (1) Base at (2) Collector Applications (3) Emitter * low frequency power amplifier Surface Mount Transistors ROM 153 2SB1424 Transistor, PNP, 2SB series Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Collector-to-base voltage | Vcgo -20 Vv Collector-to-emitter voltage VcEO -20 v Emitter-to-base voltage VeEBO ~6 V -3 DC Collector current lc A - -5 Single pulse, Py = 10 ms 0.5 Collector dissipation Po Ww : 2.0 Mounted on 40 x 40 x 0.7 mm ceramic PCB Junction temperature Tj 150 C Storage temperature Tstg -55 ~ +150 C Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol| Min |Typical| Max Unit Conditions Collector-to-base _ breakdown voltage BVceo | 20 V {lc =-50 pA Collector-to-emitter _ breakdown voltage BVceo | -20 V[lc=-ImA Emitter-to-base _ breakdown voltage BVeBo | ~-6 Vile =-50 HA Collector cutoff current Icgo -0.1 BA |Vog=-20V Emitter cutoff current leBo -0.1 HA |Vegp=-SV DC current gain hee 82 390 Voge =-2 V, Io =-0.1 A, single pulse Collector-to-emitter _ : saturation voltage VcE(sat) 0.5 Vv Io/lp =-2 A/-0.1 A, single pulse Transition frequency fy 240 MHz |Vceg =-2 V, le =0.5 A, f = 100 MHz Output capacitance Cob 35 PF |Vcp=-10V, Ip =0A, f= 1 MHz hee rankings Item P Q R Nee 82 ~ 180 120 ~ 270 180 ~ 390 154 ROM Surface Mount Transistors Transistor, PNP, 2SB series 2SB1424 Electrical characteristic curves 125 x 100 a e a 75 N Zz 9 \ E & NX RB NXT 5 Cc e IN 5 25 wd al al 3 L 0 0 28 80.75 100 125 180 AMBIENT TEMPERATURE : Ta (C) Figure 1 DC CURRENT GAIN: bre 0.001 0.01 0.1 4 +10 COLLECTOR CURRENT : ic{A) Figure 3 Ordering information Package Tape Code T100 Basic order quantity 1000 2SB1424 * * = Standard, xv = Semi-standard, * = Special order COLLECTOR CURRENT : in(A) os 0.001 0 0.2 0.4 0.6 0.8 1.0 V2 td BASE TO EMITTER VOLTAGE : Vae() Figure 2 2 COLLECTOR SATURATION VOLTAGE : Vor(satvV) 0.001 0.001 0.01 40.1 -l Ww COLLECTOR CURRENT : ic(A) Figure 4 Surface Mount Transistors ROHM 155