This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Publicati on# 22140 Rev: DAmendment/+1
Issue Date: November 13, 2000
Am29LV010B
1 Megabit (128 K x 8-Bit)
CMOS 3.0 Volt-only Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated v oltage range: 3.0 to 3.6 v olt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
■Manufactured on 0.32 µm process technology
■High performan c e
— Full voltage range: access times as fast as 55 ns
— Regulated v oltage range: access times as f ast as
45 ns
■Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
■Flexible sector architecture
— Eight 16 Kbyte
— Supports full chip erase
— Sector Protection features:
Hardware method of locking a sector to pre vent
any program or erase operations within that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotec t featur e allows code
changes in prev iously locked sectors
■Unlock Bypass Mode Program Command
— Reduces ov erall prog ramming time when issuing
multiple program command sequences
■Embedded Algorithms
— Embedded Erase algorithm automatically
preprogr ams and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■Minimum 1,000,000 write cycle guarantee per
sector
■20 Year data retention at 125°C
— Reliable operation for the life of the system
■Package option
— 32-pin TSOP
— 32-pin PLCC
■Compatibility with JEDEC standards
— Pinout and software compatible with single-
pow er supply Flash
— Superior inadvertent write protection
■Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
■Erase Suspend/Erase Resume
— Supports reading data from or programming data
to a sector that is not being erased
2 Am29LV010B
GENERAL DESCRIPTION
The Am29LV010B is a 1 Mbit, 3.0 Volt-only Flash
memory device organized as 131,072 bytes. The
Am29LV010B has a uniform sector architecture.
The device is offered in 32-pin PLCC and 32-pin TSOP
packages. T he b yt e- wi de (x 8) da ta ap pear s o n DQ7 -DQ0.
All read, erase, and program operations are accomplished
using only a single power supply. The device can also be
prog ram med in stan dard EPRO M pro gr ammer s .
The standard Am29LV010B offers access times of 45,
55, 70, and 90 ns (100 ns part is also available),
allowing high speed microprocessors to operate
without wait states. To eliminate bus contention, the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The device requires only a single power supply
(2.7V-3.6V) f or both re ad and write f unctions. I nternally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase
command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that automati-
cally preprograms the array (if it is not already
programmed) before executing the erase operation.
During erase, the device automatically ti mes t he erase
pulse widths and verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle) status bits. After a progr am
or erase cycle has been completed, the de vice is ready
to read array data or accept another command.
The sector erase arc hitecture al lo ws memory se ctors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of
memory. This can be achieved in-system or via pro-
gramming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure . True backgro und eras e can thus be achie ved.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also plac e the de v ice into the standby
mode. Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality , reliability and cost effectiveness.
The device electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The
data is programmed using hot electron injection.
Am29LV010B 3
TABLE OF CONTENTS
Product Selecto r Guide . . . . . . . . . . . . . . . . . . . . .4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . .5
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . .6
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Ordering Information . . . . . . . . . . . . . . . . . . . . . . .7
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . .8
Table 1. Am29LV010B Device Bus Operations................................ 8
Requirements for Reading Array Data .............. ............ ....... ....8
Writing Commands/Command Sequence s ..... .. .. ............ ....... ..8
Program and Erase Operation Status ......................................9
Standby Mode .................... ..... .............. ..... .............. ..... ...........9
Automatic Sleep Mode ..... .. ........ .. .. ............... .. .. .. ............. .. ......9
Output Disable Mode ................................................................9
Table 2. Am29LV010B Uniform S ector Address Table..................... 9
Autoselect Mode ............. .................. ........ .. ......... ........ ...........10
Table 3. Am29LV010B Autoselect Codes... ................ ................ .... 10
Sector Protection/Unprotection ...............................................10
Hardware Data Protection ......................................................10
Low V
CC
Write Inhibit ..............................................................10
Write Pulse “Glitch” Protection ...............................................10
Logical Inhibit ..........................................................................10
Power-Up Write Inhibit ............................................................11
Command Definitions . . . . . . . . . . . . . . . . . . . . . 11
Reading Array Data ......... .......................................................11
Reset Command .................. .............. ..................... .............. ..11
Autoselect Command Sequence ........... ..... .............. ..... .........11
Byte Program Command Sequence ....... ....... ..................... ....11
Unlock Bypass Command Sequence ..................... .............. ..12
Fig ur e 1. Pro g ra m Ope ra tion ..........................................................12
Chip Erase Command Sequence ...........................................12
Sector Erase Command Sequence ........................................13
Erase Suspend/Erase Resume Commands .... .. .....................13
Figure 2. Erase Operation ...............................................................1 4
Command Definitions .............................................................15
Table 4. Am29LV010B Command Def initions ................................ 15
Write Operation Status . . . . . . . . . . . . . . . . . . . . .16
DQ 7 : Da t a# P o ll i n g ..... .. ... ....... ....... ....... ... ....... ....... ....... ....... .. .1 6
Figure 3. Data# Polling Algorithm ...................................................16
DQ6: Toggle Bit I ............................. ........................ ...............17
DQ2: Toggle Bit II .............................................................. .....17
Reading Toggle Bits DQ6/DQ2 ............... ...............................17
Figure 4. Toggle Bit Algorithm .........................................................18
DQ5: Exceeded Timing Lim its ................................................18
DQ3: Sector Erase Timer .......................................................18
Table 5. Write Operation Status..................................................... 19
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 20
Figure 5. Maximum Negative Overshoot Waveform ........... ....... .. .. 20
Figure 6. Maxi mu m Po si tive Overshoot Waveform ........................ 20
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 20
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 7. I
CC1
Current vs. Time (Showing Active and Automatic
Sleep Currents) .............................................................................. 22
Figure 8. I
CC1
vs. Frequency .......................................................... 2 2
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 9. Test Setup ....................................................................... 2 3
Table 6. Test Specifications........................................................... 23
Key to Switching Waveforms. . . . . . . . . . . . . . . . 23
Figure 10. Input Waveforms and Measurement Levels ................. 2 3
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 24
Read Opera tions ................. .............. .............. .............. .........24
Figure 11. Read Operations Timings ............................................. 24
Erase/Program Operations .....................................................25
Figure 12. Program Operation Timings .......................................... 26
Figure 13. Chip/Sector Erase Operation Timings .......................... 27
Figure 14. Data# Polling Timings (During Embedded Algorithms) . 28
Figure 15. Toggle Bit Timings (During Embedded Algorithms) ...... 28
Figure 16. DQ2 vs. DQ6 ................................................................. 29
Figure 17. Alternate CE# Controlled Write Operation Tim ing s ...... 3 0
Erase and Programming Performance . . . . . . . . 30
Latchup C haracteristics. . . . . . . . . . . . . . . . . . . . 31
TSOP Pin Package Capacitance . . . . . . . . . . . . . 31
PLCC Pin Capacitance . . . . . . . . . . . . . . . . . . . . . 31
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 32
PL 032—32-Pin Plast ic Leaded Chip Carr ier ................ ..... ....32
TS 032—32-Pin Standard Thin Small Outline Pa cka ge .........33
TSR032—32-Pin Reverse Thin Small Outline Package .........34
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 35
Revision A (April 1998) .................................................... .......35
Revision B (September 1998) ................... .. ....... .....................35
Revision C (January 1999) ....... ....... .............. ....... .............. ....35
Revision C+1 (March 22, 1999) ..............................................35
Revision C+2 (October 5, 1999) ................. ..... .............. ..... ....35
Revision D (December 2, 1999) ..... ........................ ............ ....35
Revision D+1 (November 13, 2000) ............. ..........................35
4 Am29LV010B
PRODUCT SELECTOR GUIDE
Note:See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
Family Part Number Am29LV010B
Speed Options Regulated Voltage Range: VCC =3.0–3 .6 V -45R
Full Voltage Range: VCC = 2.7–3.6 V -55 -70 -90
Max access time, ns (tACC)45557090
Max CE# access time, ns (tCE)45557090
Max OE# access time, ns (tOE)25303035
Input/Output
Buffers
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Erase Voltage
Generator
PGM Voltage
Generator
Timer
VCC Detector
State
Control
Command
Register
VCC
VSS
WE#
CE#
OE#
STB
STB
DQ0
–
DQ7
Sector Swi tche s
Data
Latch
Y-Gating
Cell Matrix
Address Latch
A0–A16
Am29LV010B 5
CONNECTION DIAGRAMS
1
16
2
3
4
5
6
7
8
9
10
11
12
13
14
15
A11
A4
A9
A8
A13
A14
NC
WE#
VCC
NC
A16
A15
A12
A7
A6
A5
32
17
31
30
29
28
27
26
25
24
23
22
21
20
19
18
OE#
A3
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
32-Pin Reverse TSOP
1
16
2
3
4
5
6
7
8
9
10
11
12
13
14
15
32
17
31
30
29
28
27
26
25
24
23
22
21
20
19
18
A11
A9
A8
A13
A14
NC
WE#
VCC
NC
A16
A15
A12
A7
A6
A5
A4
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
32-Pin Standard TSOP
DQ6
NC
DQ5
DQ4
DQ3
13130234
5
6
7
8
9
10
11
12
13 17 18 19 2016
15
14
29
28
27
26
25
24
23
22
21
32
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
A12
A15
A16
VCC
WE#
NC
DQ1
DQ2
VSS
PLCC
6 Am29LV010B
PIN CONFIGURATION
A0–A16 = 17 addresses
DQ0–DQ7 = 8 data inputs/outputs
CE# = Chip enable
OE# = Output enable
WE# = Write enable
VCC = 3.0 volt-only single power supply
(see Product Selector Guide for speed
options and vo ltage s upply toler anc es)
VSS = De vice ground
NC = Pin not connected internally
LOGIC SYMBOL
17 8
DQ0–DQ7
A0–A16
CE#
OE#
WE#
Am29LV010B 7
ORDERING INFORMATION
Standard Product s
AMD standard products are available in several packages and operating ranges. The order number (Valid Combi-
nation) is formed by a combination of the elements below.
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in v olume for this device. Consult the local AMD sales
office to confirm av ailability of specific valid combinations and
to check on newly released combinations.
Am29LV010B -45R E C
TEMPERATURE RANGE
C=Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
PACKAGE TYPE
E = 32-Pin Thin Sm all Outline Package (TSOP)
Standard Pinout (TS 032)
F = 32-Pin Thin Small Outline Package (TSOP)
Reverse Pinout (TSR032)
J = 32-Pin Rectangular Plastic Leaded Chip
Carrier (PL 032)
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29LV010B
1 Megabit (128 K x 8-Bit) CMOS Flash Memory
3.0 Volt-only Read, Program and Erase
Valid Combinations
AM29LV 01 0B -45 R EC, FC, JC
AM29LV010B-55 EC, EI, EE,
FC, FI, FE,
JC, JI, J E
AM29LV010B-70
AM29LV010B-90
8 Am29LV010B
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The regi st er is composed of latches that store the
commands, along with the address and data informa-
tion needed to execute the command. The contents of
the register serve as inputs to the internal state
machine. The state machine outputs dictate the func-
tion of the device. Table 1 lists the device bus
operations, the inputs and control levels they require,
and the resulting output. The following subsections
describe each of these operations in further detail.
Table 1. Am29LV010B Device Bus Operations
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0
±
0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A16–A0.
2. Sector protection/unprotection can be implemented by using programming equipment. See the “Sector Protection/Unprotec-
tion” section.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output
control and gates array data to the output pins. WE#
should remain at VIH.
The internal state machine is set for reading array data
upon device power-up. This ensures that no spurious
alteration of the memory content occurs during the
power transition. No command is necessary in this
mode to obtain array data. Standard microprocessor
read cycles that assert valid addresses on the device
address inputs produce valid data on the device data
outputs. The device remains enabled for read access
until the command register contents are altered.
See “Reading Array Data” for more infor mation. Refer
to the AC Read Operations table for timing specifica-
tions and to Figure 11 f or the timing diagram. ICC1 in the
DC Characteristics table represents the active current
specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and O E # to V IH.
The device features an Unlock Bypass mode to fa cili-
tate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are
required to program a byte, instead of four. The “Byte
Program Command Sequence” section has details on
programming data to the device using both standard
and Unlock Bypass command sequences.
An erase oper at ion can er ase one sect or, multiple s ec-
tors, or the en tire device. Tab le 2 indic ates the addres s
space that each sector occupies. A “sector address”
consists of th e address bits required to uniquely select
a sector. The “Command Definitions” section has
details on erasing a sector or the entire chip, or sus-
pending/resuming the erase operation.
After the system writes the autoselect command
sequence, the device ent ers t he autoselect mode. The
Operation CE# OE# WE# Addresses (Note 1) DQ0–DQ7
Read L L H AIN DOUT
Write L H L AIN DIN
Standby VCC ± 0.3 V X X X High-Z
Output Dis able L H H X High-Z
Reset X X X X High-Z
Sector Protect (Note 2) L H L Sector Address, A6 = L, A1 = H,
A0 = L DIN, DOUT
Sector Unp rot ect (No te 2) L H L Sector Address, A6 = H, A1 =
H, A0 = L DIN, DOUT
Temporary Sector Unprotect X X X AIN DIN
Am29LV010B 9
system can then read autoselect codes from the
internal register (which is separate from the memory
arra y) on DQ7–DQ0. Standard read cycle timings apply
in this mode. Ref er to the A utoselect Mode and A utose-
lect Command Sequence sections for more
information.
ICC2 in the DC Characteristics table represents the
active current specification f or the write mode. The “A C
Characteristics” section contains timing specification
tables and timing diagrams for wr ite operations.
Program and Erase Operation Status
During an erase or prog ram oper ation, th e system ma y
check the status of the operation by reading the status
bits on DQ7–DQ0. St andard read cycle timings and I CC
read specifications apply. Refer to “Write Operation
Status” for more information, and to “AC Characteris-
tics” for timing diagrams.
Standby Mode
When the system is not reading or writing to t he device ,
it can place the device in the standby mode. In this
mode, current co nsumption is g reat ly reduced, and the
outputs are placed in the high impedance state, inde-
pendent of the OE# input.
The device enters the CMOS standby mode when the
CE# pin is held at VCC ± 0.3 V. (Note that this is a more
restricted v oltage range than V IH.) If CE# is held at VIH,
but not within VCC ± 0.3 V, the device will be in the
standby mode, but the standby current will be greater.
The device requires standard access time (tCE) for read
access when the device is in either of these standby
modes, before it is ready to read data.
If the device is deselected during erasure or program -
ming, the device draws active current until the
operation is completed.
ICC3 in the DC Characteristics table represents the
standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device
energy consumption. The dev ice automatically enables
this mode when addresses remain stable for t ACC + 30
ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. St andard address
access timings provide new data when addresses are
changed. While in sleep mode, output data is latched
and always available to the system. ICC4 in the DC
Characteristics table represents the automatic sleep
mode current specification.
Output Disable Mode
When the OE# input is at VIH, output from the de vice is
disabled. The output pins are plac ed in the h igh imped-
ance state.
Table 2. Am29LV010B Uniform Sector Addr ess Table
Sector A16 A15 A14 Address Range
SA0 0 0 0 00000h-03FFFh
SA1 0 0 1 04000h-07FFFh
SA2 0 1 0 08000h-0BFFFh
SA3 0 1 1 0C000h-0FFFFh
SA4 1 0 0 10000h-13FFFh
SA5 1 0 1 14000h-17FFFh
SA6 1 1 0 18000h-1BFFFh
SA7 1 1 1 1C000h-1FFFFh
10 Am29LV010B
Autoselect Mode
The autoselect mode provides manufacturer and
device identification, and sector protection verific ation,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended f or programming equipment
to automatically match a de vice to be programmed with
its corresponding programming algorithm. However,
the autoselect codes can also be accessed in-system
through the command register.
When using programming equipment, the autoselect
mode requires VID (11.5 V to 12.5 V) on address pin
A9. Address pins A6, A1, and A0 must be as shown in
Table 3. In addition, when verifying sector protection,
the sector address must appear on the appropriate
highest order address bits (see Tabl e 2). When all nec-
essary bits have been set as required, the
programming equipment may then read the corre-
sponding identifier code on DQ7-DQ0.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 4. This method
does not require VID. See “Command Definitions” for
details on using the autoselect mode.
Table 3. Am29LV010B Autoselect Codes
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Sector Protection/Unprotection
The hardware sector protection feature disables both
progr am and er ase opera tions in an y sect or. The hard-
ware sector unprotection feature re-enables both
program and erase operations in previously protected
secto rs.
The method in tended only f or programming equipment
requires VID on address pin A9, and OE#. This method
is compatible with programmer routines written for
earlier 3.0 volt-only AMD flash devices. Publication
number 22134 contains further details; contact an
AMD representative to request a copy.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possib le to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 4 for
command definitions). In addition, the following hard-
ware data protection measures prevent accidental
erasure or programming, which might otherwise be
caused by spurious system level signals during VCC
power-up and power-down transitions, or from system
noise.
Low V CC Write Inhibit
When VCC is less than VLKO, the device does not
accept any write cycles. This protec ts data during VCC
power-up and power-do wn. The command register and
all internal program/er ase circuits are disabled, and the
dev ice resets . Subsequent writes are ignored until VCC
is greater than VLKO. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical In hibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or W E# = VIH. To initiate a writ e cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Description CE# OE# WE#
A16
to
A14
A13
to
A10 A9
A8
to
A7 A6
A5
to
A2 A1 A0
DQ7
to
DQ0
Manufacturer ID: AMD L L H X X VID XLXLL 01h
Device ID: Am29LV010B L L H X X VID XLXLH 6Eh
Sector Protection Verification L L H SA X VID XLXHL
01h
(protected)
00h
(unprotected)
Am29LV010B 11
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during pow er up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
COMMAND DEFINITIONS
Writing specific address and data commands or
sequences into the command register initiates device
operati ons. Tab le 4 defines the v ali d register command
sequences. Writing incorrect address and data
values or writing them in the improper sequence
resets the device to reading array data.
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Charac teristics” section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or
Embedded Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The
system can read array data using the standard read
timings, except that if it reads at an address within
erase-suspended sectors, the device outputs status
data. After c ompleting a programming operation in the
Erase Suspend mode, the system may once again
read array data with the same exception. See “Erase
Suspend/Erase Resume Commands” for more infor-
mation on this mode.
The system
must
issue the reset command to re-
enable the device for reading array data if DQ5 goes
high, or while in the autoselect mode. See the “Reset
Command” section, next.
See also “Requirements for Reading Arra y Dat a” in the
“Device Bus Operations” section for more infor mation.
The Read Operations table provides the read parame-
ters, and Figure 11 shows the timing diagram.
Reset Command
Writing the reset command to the device resets the
device to reading array data. Address bits are don’t
care for this command.
The reset command may be written between the
sequence cycles in an erase command sequence
before erasing begins. This resets the de vice to reading
array data. Once erasure begins, however, the device
ignores reset commands until the operation is
complete.
The reset command may be written between the
sequence cycles in a program command sequence
before programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the
sequence cycles in an autoselect c ommand sequence.
Once in the aut oselect mode , the re set command
must
be written to return to reading array data (also applies
to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to
reading array data (also applies during Erase
Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the man uf acturer and devices codes ,
and determine whether or not a sector is protected.
Table 4 shows the address and data requirements. This
method is an alternativ e to that shown in Tabl e 3, which
is intended for PROM programmers and requires VID
on address bit A9.
The autoselect command sequence is initiated by
writing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect
mode, and the system may read at any address any
number of times, without initiating another command
sequence. A r ead cycle at addres s XX00h retriev es the
manufacturer code. A read cycle at address XX01h
returns the device code. A read cycle containing a
sector address (SA) and the address 02h returns 01h if
that sector is protected, or 00h if it is unprotecte d. Refer
to Table 2 for the valid sector addresses.
The system must write the reset command to exit the
autoselect mode and return to reading arra y data.
Byte Program Command Sequence
The device programs one byte of data for each program
operation. The command sequence requires four bus
cycles, and is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
syst em is
not
required to p rovide further controls or tim-
ings. The device automatically provides internally
12 Am29LV010B
generated program puls es and verify the programmed
cell margin. Table 4 shows the address and data
requirements for the byte program command
sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and
addresses are no longer latched. The system can
determine the status of the program operati on by using
DQ7 or DQ6. See “Write Oper ation Status” for informa-
tion on these status bits.
Any commands written to the device during the
Embedded Program Algorithm are ignored. The Byte
Program command sequence should be reinitiated
once the device has reset to reading array data, to
ensure data integrity.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempt ing to do so ma y halt
the operation and set DQ5 to “1,” or cause the Data#
Polling algorithm to indicate the operation was suc-
cessful. Howe ver , a succeeding read will show that the
data is still “0”. Only erase operations can con vert a “0”
to a “1”.
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to
progr am bytes to the device faster than using the stan-
dard progr am command sequence . The unlock bypass
command sequence is initiated by first writing two
unlock cycles. This is followed by a third write cycle
containing the unlock bypass command, 20h. The
device then enters the unlock bypass mode. A two-
cycle unlock bypass progr am command sequen ce is all
that is req uired to program in this mode. The first cycle
in this sequence contains the unlock bypass program
command, A0h; the sec ond cycle con tains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total program-
ming time. Table 4 shows the requirements for the
command sequence.
During the unlock bypass mode, only the Unlock
Bypass Progr am and Unlock Bypass Reset commands
are valid. To exit the unlock bypass m ode, the system
must issue the two-cycle unlock bypass reset
command sequence. The first cycle must contain the
data 90h; the second cycle the data 00h. Addresses
are don’t cares f or both cycles . The dev ice then returns
to reading array data.
Figure 1 illustrates the algorithm for the program oper-
ation. See the Eras e/Program Operations table in “AC
Characteristics” for parameters, and to Figure 12 for
timing diagrams.
Note:See Table 4 for program command sequence.
Figure 1. Program Operation
Chip Erase Command Sequence
Chip erase is a six b us cycle ope ra tion. The chip er ase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does
not
require the system to
preprogr am prior to eras e. The Embedded Erase algo-
rithm automatically preprogr ams and verifies the entire
memor y for an all zero data pattern prior to electrical
erase. The system is not required to provide any con-
trols or timings during these operations. Table 4 shows
the address and data requirements for the chip erase
command sequence.
Any commands written to the chip during the
Embedded Erase algorithm are ignored. The Chip
Erase command sequence should be reinitiated once
the device has returned to reading array data, to
ensure data integrity.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data? No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Am29LV010B 13
The system can determine the status of the erase oper-
ation by using DQ7, DQ6, or DQ2. See “Write
Operation Status” for information on these status bits.
When the Embedded Erase algorithm is complete, the
dev ice returns to reading arra y data and addresses are
no longer latched.
Figure 2 illustrates the algorithm for the erase opera-
tion. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to Figure 13 for
timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command. Table 4 shows the address and data
requirements f or the sector eras e command sequence.
The device does
not
require the system to preprogr am
the memory prior to e rase. The Embedded Erase algo-
rithm automatically progr ams and verifies the sector f or
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or
timings during these operations.
After the command sequence is written, a sector er ase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase com-
mands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of
sectors ma y be from one sector t o all sectors. The t ime
between these additional cycles must be less than 50
µs, ot herwise the last address and command might not
be accepted, and erasure may begin. It is recom-
mended that processor interrupts be disabled during
this time to ensure all commands are accepted. The
interrupts can be re-enab led after the las t Sector Erase
command is written. If the time between additional
sector erase commands can be assumed to be less
than 50 µs, the system need not monitor DQ3. Any
command other than Sector Erase or Erase
Suspend during the time-out period resets the
device to reading array data. The system must
rewrite the command sequence and any additional
sector addresses and commands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase
Timer” section.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
Once the sector erase operation has begun, only the
Erase Suspend command is v alid. All oth er commands
are ignored. The Sector Erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the
dev ice returns to reading arr a y dat a and addr esses are
no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6, or
DQ2. (Refe r to “Write Oper ation Statu s” f or inf ormation
on these status bits.)
Figure 2 illustrates the algorithm for the erase opera-
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section f or par amet ers , and to
Figure 13 for timing diagrams.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to
interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 µs time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algo-
rithm. Writing the Erase Suspe nd command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation.
Addresses are “don’t-cares” when writing the Erase
Suspend command.
When the Erase Suspend command is written during a
sector erase oper ation, the devi ce requires a maximum
of 20 µs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately ter-
minates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not select ed for er asure . (The devic e “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended
sectors produces status data on DQ7–DQ0. The
system can use DQ7, or DQ6 and DQ2 together, to
determine if a sector is activ ely erasing or is eras e-sus-
pended. See “Write Operation Status” for information
on these status bits.
After an erase-suspended program operation is com-
plete, the system c an once again r ead arra y d ata within
non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program oper-
ation. See “Write Operation Status” for more
information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
14 Am29LV010B
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase oper ation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the
device has resumed erasing.
Notes:
1. See Table 4 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 2. Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Am29LV010B 15
Command Definitions
Table 4. Am29LV010B Command Definitions
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses are latched on the falling edge of the WE# or CE#
pulse.
PD = Data to be programmed at location PA. Data is latched
on the rising edge of WE# or CE# pulse.
SA = Address of the sector to be erased or v erified. Address
bits A16–A14 uniquely select any sector.
Notes:
1. See Table 1 for descriptions of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus
cycles are write operations.
4. Address bits A16–A11 are don’t care for unlock and
command cycles, unless SA or PA required.
5. No unlock or command cycles required when device is in
read mode.
6. The Reset command is required to return to the read
mode when the device is in the autoselect mode or if DQ5
goes high.
7. The fourth cycle of the autoselect command sequence is
a read cycle.
8. The data is 00h for an unprotected sector and 01h for a
protected sector . The complete bus address in the fourth
cycle is composed of the sector address (A16–A14), A1 =
1, and A0 = 0.
9. The Unlock Bypass command is required prior to the
Unlock Bypass Program command.
10. The Unlock Bypass Reset command is required to return
to reading array data when the device is in the Unlock
Bypass mode.
11. The system may read and program functions in non-
erasing sectors, or enter the autoselect mode, when in the
Erase Suspend mode. The Erase Suspend command is
valid only during a sector erase operation.
12. The Erase Resume command is valid only during the
Erase Suspend mode.
Command Sequence
(Note 1)
Cycles
Bus Cycles (Notes 2–4)
First Second Third Fourth Fifth Sixth
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read (Note 5) 1 RA RD
Reset (Note 6) 1 XXX F0
Autosel ect (No te 7)
Manufacturer ID 4 555 AA 2A A 55 555 90 X00 01
Device ID,
Am29LV010B 4 555 AA 2AA 55 555 90 X01 6E
Sector Protect
Verify (Note 8) 4 555 AA 2AA 55 555 90 SA
X02 00
01
Byte Program 4 555 AA 2AA 55 555 A0 PA PD
Unlock Bypass 3 555 AA 2AA 55 555 20
Unlock Bypass Program
(Note 9) 2 XXX A0 PA PD
Unlock Bypass Reset
(Note 10) 2 XXX 90 XXX 00
Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10
Sector Erase 6 5 55 AA 2AA 55 555 80 555 A A 2AA 55 SA 3 0
Erase Suspend (Note 11) 1 XXX B0
Erase Resume (Note 12) 1 XXX 30
16 Am29LV010B
WRITE OPERATION STATUS
The device provides several bits to determine the
status of a write operation: DQ2, DQ3, DQ5, DQ6, and
DQ7. Table 5 and the following subsections describe
the functions of these bits. DQ7, and DQ6 each off er a
method for determining whether a program or erase
operation is complete or in progress. These three bits
are discussed first.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host
system whether an Embedded A lgorithm is in prog ress
or completed, or whether the device is in Erase Sus-
pend. Data# Polling is valid after the rising edge of the
final WE# pulse in the program or erase command
sequence.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum pro-
grammed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for
approx imately 1 µs, then the device returns to reading
array data.
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete , or if the de v ice enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous t o the complement/true datum output
described for the Embedded Program algorithm: the
erase function changes all the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or
“0.” The system must provide an address within any of
the sectors selected for erasure to read valid status
information on DQ7.
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data#
Polling on DQ7 is act iv e for appro ximately 100 µs , then
the device returns to reading array data. If not all
selected sectors are protected, the Embedded Erase
algorithm erases the unprotected sectors, and ignores
the selected sectors that are protec ted.
When the system detects DQ7 has changed from the
complement to true data, it can read valid dat a at DQ7–
DQ0 on the
following
read cycles . This is because DQ7
may change asynchronously with DQ0–DQ6 while
Output Enable (OE#) is asserted lo w. Figure 14, Data#
Polling Timings (Dur ing Embedded Algorithms), in the
“AC Characteristics” section illustrates this.
Table 5 shows the outputs for Data# Polling on DQ7.
Figure 3 shows the Data# Polling algorithm.
DQ7 = Data? Yes
No
No
DQ5 = 1?
No
Yes
Yes
FAIL PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
START
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Figure 3. Data# Polling Algorithm
Am29LV010B 17
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Er ase algorithm is in prog ress or complete ,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the
command sequence (prior to the program or erase
operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm
operation, successive read cycles to any address
cause DQ6 to toggle (The system may use either OE#
or CE# to control the read cycles). When the operation
is complete, DQ6 stops toggling.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles
for approximately 100 µs, then returns to reading array
data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to deter-
mine whether a sector is actively erasing or is erase-
suspended. When the de vice is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend
mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then retu r ns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded
Program algorithm is complete.
Table 5 shows the outputs for Toggle Bit I on DQ6.
Figure 4 shows the toggle bit algorithm in flowchart
form, and the section “Reading Toggle Bits DQ6/DQ2”
ex plains t he alg orithm. Figure 15 in the “AC Character-
istics” section shows the toggle bit timing diagrams.
Figure 16 shows the differences between DQ2 and
DQ6 in graphical form. See also the subsection on
DQ2: Toggle Bit II.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indi-
cates whether a particular sector is actively erasing
(that is , the Embedded Er as e alg orithm is in pr og ress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge o f the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for era-
sure. (The system may use either OE# or CE# to
control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-sus-
pended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for era-
sure. Thus, both status bits are required for sector and
mode info rmation. Ref er t o Tab le 5 to c ompare output s
for DQ2 and DQ6.
Figure 4 shows the toggle bit algorithm in flowchart
form, and the section “Reading Toggle Bits DQ6/DQ2”
explains the algorithm. See also the DQ6: Toggle Bit I
subsection. Figure 15 shows the toggle bit timing dia-
gram. Figure 16 shows the differences between DQ2
and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 4 for the following discussion. When-
ever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at leas t twice in a ro w to
determine whether a toggle bit is toggling. Typically, the
system would note and store th e v alue of the t oggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. I f the toggle bit is not t oggling, the de vice has com-
pleted the prog ram or er ase operation. The system can
read array data on DQ7–DQ0 on the following read
cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is
high (see the section on DQ5). If it is, the system
should then determine again whether the toggle bit is
toggling, since the toggle bit may have stopped tog-
gling just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the
device did not completed the operation successfully,
and the system must write the res et command to return
to reading array data.
The remaining scenario is that the system initially
determines that the toggle bit is toggling and DQ5 has
not gone high. The system ma y contin ue to monitor the
toggle bit and DQ5 through successive read cycles,
determining the status as described in the previous
paragraph. Alternatively, it may choose to perform
other system t ask s. In this case, the system must start
at the beginning of the algorithm when it returns to
determine the status of the operation (top of Figure 4).
Table 5 shows the outputs for Toggle Bit I on DQ6.
Figure 4 shows the toggle bit algorithm. Figure 15 in the
“AC Char acteristics” section sho ws the t oggle bit timing
diagrams. Figure 16 shows the differences between
DQ2 and DQ6 in graphical for m. See also the subsec-
tion on DQ2: Toggle Bit II.
18 Am29LV010B
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the pro gram or er ase cycle w as
not successfully completed.
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is pre viously pro-
grammed to “0.” Only an erase operation can change
a “0” back to a “1.” Under this condition, the device
halts the operation, and when the operation has
exceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the
reset command to return the device to reading array
data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If addi-
tional sectors are selected for erasure, the entire time-
out also applies after each additional sector erase com-
mand. When the time-out is complete, DQ3 switches
from “0” to “1.” If the time between additional sector
erase commands from the system can be assumed to
be less than 50 µs, the system need not monitor DQ3.
See also the “Sector Erase Command Sequence”
section.
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data#
Polling) or DQ6 (Toggle Bit I) to ensure the device has
accepted the c ommand sequence, and then read DQ3.
If DQ3 is “1”, the internally controlled erase cycle has
begun; all further commands (other than Erase Sus-
pend) are ignored until the erase operation is complete.
If DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command has been
accepted, the s ystem softw are should chec k the status
of DQ3 prior to and following each subsequent sector
erase command. If DQ3 is high on the second status
check, the last command might not have been
accepted. Table 5 shows the outputs for DQ3.
START
No
Yes
Yes
DQ5 = 1?
No
Yes
Toggle Bit
= Toggle? No
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Read DQ7–DQ0
Toggle Bit
= Toggle?
Read DQ7–DQ0
Twice
Read DQ7–DQ0
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
Figure 4. Toggle Bit Algorith m
(Note 1)
(Notes
1, 2)
Am29LV010B 19
Table 5. Write Operation Status
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
Operation DQ7
(Note 2) DQ6 DQ5
(Note 1) DQ3 DQ2
(Note 2)
Standard
Mode Embedded Program Algorithm DQ7# Toggle 0 N/A No toggle
Embedded Erase Algorithm 0 Toggle 0 1 Toggle
Erase
Suspend
Mode
Reading with in Erase
Suspend ed Sec tor 1 No toggle 0 N/A Toggle
Reading with in Non -Eras e
Suspend ed Sec tor Data Data Data Data Data
Erase-Suspend-Program DQ7# Toggle 0 N/A N/A
20 Am29LV010B
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –65°C to +125°C
Voltage with Respect to Ground
All pins except A9 and OE#
(Note 1) . . . . . . . . . . . . . . . . . . . –0.5 V to VCC+0.5 V
VCC (Note 1). . . . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
A9 and OE# (Note 2). . . . . . . . . . . .–0.5 V to +12.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, input or I/O pins may ov ershoot VSS to
–2.0 V for periods of up to 20 ns. See Figure 5. Maximum
DC voltage on input or I/O pins is
V
CC +0.5 V. During
voltage transitions, input or I/O pins ma y ov ershoot to VCC
+2.0 V for periods up to 20 ns. See Figure 6.
2. Minimum DC input voltage on pins A9 and OE# is –0.5 V.
During voltage transitions, A9 and OE# may overshoot
VSS to –2.0 V for periods of up to 20 ns. See Figure 5.
Maximum DC input voltage on pin A9 is +12.5 V which
may overshoot to 14.0 V for periods up to 20 ns.
3. No more tha n one outpu t may be sh or ted to ground at a
time. Duration of the short circuit should not be greater
than one second.
4. Stresses above those listed under “Absolute Maximum
Ra t in g s ” may cause per manent da mage to the d evice. This
is a stress rating only; functional operation of the device at
these or any other conditions abov e those indicated in the op-
erational sections of th is data sheet is not imp lied. Exp osure
of the de vice to absolut e maxim um ra ting con ditions f or e x-
tended periods may affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (TA) . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
Extended (E) Devices
Ambient Temperature (TA) . . . . . . . . –55°C to +125°C
VCC Supply Voltages
VCC for regulated voltage range. . . . . .+3.0 V to 3.6 V
VCC for full voltage range. . . . . . . . . . .+2.7 V to 3.6 V
Operating ranges define those limits between which the func-
tionality of the device is guaranteed.
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
Figure 5. Maximum Negative
Overshoot Waveform
20 ns
20 ns
VCC
+2.0 V
VCC
+0.5 V
20 ns
2.0 V
Figure 6. Maximum Positive
Overshoot Waveform
Am29LV010B 21
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC currents listed are tested with VCC=VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode
current is 200 nA.
5. Not 100% tested.
Parameter Description Test Conditions Min Typ Max Unit
ILI Input Load Current VIN = VSS to VCC,
VCC = VCC max ±1.0 µA
ILIT A9 Input Load Current VCC = VCC max; A9 = 12.5 V 35 µA
ILO Output Leakage Current VOUT = VSS to VCC,
VCC = VCC max ±1.0 µA
ICC1 VCC Active Read Current
(Notes 1, 2) CE# = VIL, OE# = VIH 5 MH z 7 12 mA
1 MHz 2 4
ICC2 VCC Active Write Current
(Notes 2, 3, 5) CE# = VIL, OE# = VIH 15 30 mA
ICC3 VCC Standby Current (Note 2) CE# = VCC ± 0.3 V 0.2 5 µA
ICC4 Automatic Sleep Mode Current
(Notes 2, 4) VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V 0.2 5 µA
VIL Input Low Voltage –0.5 0.8 V
VIH Input High Voltage 0.7 x VCC VCC + 0.3 V
VID Voltage for Autoselect and
Temporary Sector Unprotect VCC = 3.3 V 11.5 12.5 V
VOL Output Low Voltage IOL = 4.0 mA, VCC = VCC min 0.45 V
VOH1 Output High Voltage IOH = –2.0 mA, VCC = VCC min 0.85 VCC V
VOH2 IOH = –100 µA, VCC = VCC min V
CC – 0.4
VLKO Low VCC Lock-Out Voltage
(Note 5) 2.3 2.5 V
22 Am29LV010B
DC CHARACTERISTICS (continued)
Zero Power Flash
Note:Addresses are switching at 1 MHz
Figure 7. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
20
15
10
5
00 500 1000 1500 2000 2500 3000 3500 4000
Supply Current in mA
Time in ns
Note:T = 25
°
C
Figure 8. ICC1 vs. Frequency
10
8
2
0
1 2345
Frequency in MHz
Supply Current in mA
2.7 V
3.6 V
4
6
Am29LV010B 23
TEST CONDITIONS
Table 6. Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 kΩ
CL6.2 kΩ
3.3 V
Device
Under
Test
Figure 9. Test Setup
Note:Diodes are IN3064 or equivalent
Test Condition -45R,
-55 -70,
-90 Unit
Output Load 1 TTL gate
Output Load Capacitance, CL
(including jig cap aci tan ce) 30 100 pF
Input Rise and Fall Times 5 ns
Input Pulse Levels 0.0–3.0 V
Input timing measurement
reference levels 1.5 V
Output timing measurement
reference levels 1.5 V
WAVEFORM INPUTS OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted Changing, State Unknown
Does Not Apply Center Line is High Impedance State (High Z)
3.0 V
0.0 V 1.5 V 1.5 V OutputMeasurement LevelInput
Figure 10. Input Waveforms and Measurement Levels
24 Am29LV010B
AC CHARACTERISTICS
Read Operations
Notes:
1. Not 100% tested.
2. See Figure 9 and Table 6 for test specifications.
Parameter
Description
Speed Options
JEDEC Std Test Setup -45R -55 -70 -90 Unit
tAVAV tRC Read Cycle Time (Note 1) Min 45 55 70 90 ns
tAVQV tACC Address to Output Delay CE# = VIL
OE# = VIL Max45557090ns
tELQV tCE Chip Enable to Output Delay OE# = VIL Max45557090ns
tGLQV tOE Output Enable to Output Delay Max 25 30 30 35 ns
tEHQZ tDF Chip Enable to Output High Z (Note 1) Max 10 15 25 30 ns
tGHQZ tDF Output Enable to Output High Z (Note 1) Max 10 15 25 30 ns
tOEH Output Enable
Hold Time (Note 1)
Read Min 0 ns
Toggle and
Data# Po llin g Min 10 ns
tAXQX tOH Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First (Note 1) Min 0 ns
tCE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output V alid
HIGH Z
Addresses Stable
tRC
tACC
tOEH
tOE tDF
tOH
Figure 11. Read Operations Timings
Am29LV010B 25
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” Section for more information.
Parameter Spe ed Op tion s
JEDEC Std Description -45R -55 -70 -90 Unit
tAVAV tWC Write Cycle Time (Note 1) Min 45 55 70 90 ns
tAVWL tAS Addre ss Set up Tim e Min 0 ns
tWLAX tAH Address Hold Time Min 35 45 45 45 ns
tDVWH tDS Da ta Set up Tim e Min 20 20 35 45 ns
tWHDX tDH Data Hold Time Min 0 ns
tOES Output Enable Setup Time (Note 1) Min 0 ns
tGHWL tGHWL Read Recovery Time Before Write
(OE# High to WE# Low) Min 0 ns
tELWL tCS CE# Setup Time Min 0 ns
tWHEH tCH CE# Hold Time Min 0 ns
tWLWH tWP Write Pulse Width Min 25 30 35 35 ns
tWHWL tWPH Write Pulse Wid th Hig h Min 30 30 30 30 ns
tWHWH1 tWHWH1 Programming Operation (Note 2) Typ 9 µs
tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.7 sec
tVCS VCC Setup Time (Note 1) Min 50 µs
26 Am29LV010B
AC CHARACTERISTICS
OE#
WE#
CE#
VCC
Data
Addresses
tDS
tAH
tDH
tWP
PD
tWHWH1
tWC tAS
tWPH
tVCS
555h PA PA
Read Status Data (last two cycles)
A0h
tCS
Status DOUT
Program Command Sequence (last two cycles)
tCH
PA
Note:
PA = program address, PD = program data, DOUT is the true data at the program address.
Figure 12. Program Operation Timings
Am29LV010B 27
AC CHARACTERISTICS
OE#
CE#
Addresses
VCC
WE#
Data
2AAh SA
tAH
tWP
tWC tAS
tWPH
555h for chip erase
10 for Chip Erase
30h
tDS
tVCS
tCS
tDH
55h
tCH
In
Progress Complete
tWHWH2
VA
VA
Erase Command Sequence (last two cycles) Read Status Data
Note:
SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
Figure 13. Ch ip/Sector Erase Operation Timings
28 Am29LV010B
AC CHARACTERISTICS
WE#
CE#
OE#
High Z
tOE
High Z
DQ7
DQ0–DQ6
Complement True
Addresses VA
tOEH
tCE
tCH
tOH
tDF
VA VA
Status Data
Complement
Status Data True
Valid Data
Valid Data
tACC
tRC
Note:
V A = V alid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
Figure 14. Data# Polling Timings (During Embedded Algorithms)
WE#
CE#
OE#
High Z
tOE
DQ6/DQ2
Addresses VA
tOEH
tCE
tCH
tOH
tDF
VA VA
tACC
tRC
Valid DataValid StatusValid Status
(first read) (second read) (stops toggling)
Valid Status
VA
Note:
V A = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle,
and array data read cycle.
Figure 15. Toggle Bi t Timings (During Em bedded Alg orithms)
Am29LV010B 29
AC CHARACTERISTICS
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” Section for more information.
Parameter Speed Options
JEDEC Std Description -45 -55 -70 -90 Unit
tAVAV tWC Write Cycle Time (Note 1) Min 45 55 70 90 ns
tAVEL tAS Address Setup Time Min 0 ns
tELAX tAH Address Hold Time Min 35 45 45 45 ns
tDVEH tDS Data Setup Time Min 20 20 35 45 ns
tEHDX tDH Data Hold Time Min 0 ns
tOES Output Enable Setup Time (Note 1) Min 0 ns
tGHEL tGHEL Read Recovery Time Before Write
(OE# High to WE# Low) Min 0 ns
tWLEL tWS WE# Setup Time Min 0 ns
tEHWH tWH WE# Hold Time Min 0 ns
tELEH tCP CE# Pulse Width Min 25 30 35 35 ns
tEHEL tCPH CE# Pulse Width High Min 30 ns
tWHWH1 tWHWH1 Programming Operation (Note 2) Typ 9 µs
tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.7 sec
Note:
The system can use OE# or CE# to toggle DQ2/DQ6. DQ2 toggles only when read at an address within an erase-suspended
sector.
Figure 16. DQ2 vs. DQ6
Enter
Erase
Erase
Erase
Enter Erase
Suspend Program
Erase Suspend
Read Erase Suspend
Read
Erase
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Suspend
Program
Resume
Embedded
Erasing
30 Am29LV010B
AC CHARACTERISTICS
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 4 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
Parameter Typ (Note 1) Max (Note 3) Unit Comments
Sector Erase Time 0.7 15 s Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time (Note 2) 6 s
Byte Programming Time 9 300 µs Excludes system level
overhead (Note 5)
Chip Programming Time (Note 2) 1.1 3.3 s
tGHEL
tWS
OE#
CE#
WE#
tDS
Data
tAH
Addresses
tDH
tCP
DQ7# D
OUT
tWC tAS
tCPH
PA
Data# Polling
A0 for program
55 for erase
tWHWH1 or 2
tWH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase PA for program
SA for sector erase
555 for chip erase
Notes:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at address PA.
3. DQ7 is the complement of the data written to the device.
4. DOUT is the data written to the device.
5. Figure indicates the last two bus cycles of the command sequence.
Figure 17. Alternate CE# Controlled Write Operation Timings
Am29LV010B 31
LATCHUP CHARACTERISTICS
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP PIN PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
PLCC PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Description Min Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9 and O E#) –1.0 V 13.0 V
Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V
VCC Current –100 mA +100 mA
Parameter
Symbol Parameter Description Test Setup Typ Max Unit
CIN Input Capacitance VIN = 0 6 7.5 pF
COUT Output Capacitance VOUT = 0 8.5 12 pF
CIN2 Control Pin Capacitance VIN = 0 7.5 9 pF
Parameter Symbol Parameter Description Test Setup Typ Max Unit
CIN Input Capac itan ce VIN = 0 4 6 pF
COUT Output Capacitance VOUT = 0 8 12 pF
CIN2 Control Pin Capacitance VPP = 0 8 12 pF
Parameter Test Conditions Min Unit
Minimum Pattern Data Retention Time 150°C 10 Years
125°C 20 Years
32 Am29LV010B
PH YS ICAL DIMENSIONS
PL 032—32-Pin Plastic Leaded Chip Carrier
Dwg rev AH; 10/99
Am29LV010B 33
PH YS ICAL DIMENSIONS *
TS 032—32-Pin Standard Thin Small Outline Package
* For reference only. BSC is an ANSI standard for Basic Space Centering
Dwg rev AA; 10/99
34 Am29LV010B
PH YS ICAL DIMENSIONS *
TSR032—32-Pin Reverse Thin Small Outline Package
* For reference only. BSC is an ANSI standard for Basic Space Centering
Dwg rev AA; 10/99
35 Am29LV010B
REVISION SUMMARY
Revision A (April 1998)
Split the Am29LV001B/Am29LV010B data sheet into
separate documents. The Am29LV001B data sheet
retains publication number 21557B and later; the
Am29LV010B data sheet has been reas signed pub lica-
tion number 22140.
Valid Combinations
Changes since publication number 21557A was
released: deleted the “R” designation from the 55 ns
option. Corrected the part numbers.
Revision B (September 1998)
Expanded data sheet from Advanced Information to
Preliminary version.
Distinctive Characteristics
Changed “Man uf actured on 0.35 µm process technolog y”
to “Manufactured on 0.32 µm process technolog y”.
Revision C (January 1999)
Data Retention
Added new table.
Revision C+1 (March 22, 1999)
Product Selector Guide
The parameter t CE should be 25 ns for the -45R de v ice
and 30 ns for the -70 dev ice.
Revisi on Sum mary
Deleted draft revision items.
Revision C+2 (October 5, 1999)
DC Characteristics
CMOS Compatible tab le:
Deleted I CC4, VCC Reset Cur-
rent. This device does not have the RESET# pin.
Changed ICC5, A ut omatic Sleep Mode Current , to ICC4,
amd corresponding ref erence in Automatic Sleep Mode
section.
Requirements for Reading Array Da ta
Deleted reference to hardware reset. This device does
not have the RESET# pin.
Revision D (December 2, 1999)
AC Characteristics—Figure 12. Program
Operations Timing and Figure 13. Chip/Sector
Erase Operations
Deleted tGHWL and changed OE# wavefor m to star t at
high.
Physi cal Dimensions
Replaced figures with more detailed illustrations.
Revision D+1 (November 13, 2000)
Added table of contents. Deleted burn-in option from
Ordering Information section.
Trademarks
Copyright © 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
