2N4859 2N4859A w w w. c e n t r a l s e m i . c o m N-CHANNEL SILICON JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4859 and 2N4859A are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25C) Drain-Source Voltage SYMBOL VDS VDG Drain-Gate Voltage 30 V 30 V 50 mA PD TJ, Tstg 360 mW -65 to +200 C Forward Gate Current ELECTRICAL SYMBOL IGSS IGSS IDSS ID(OFF) ID(OFF) BVGSS VGS(OFF) VDS(ON) rDS(ON) Crss Crss Ciss Ciss td td tr toff toff CHARACTERISTICS: (TA=25C unless otherwise noted) TEST CONDITIONS MIN VGS=15V, VDS=0 VGS=15V, VDS=0, TA=150C VDS=15V, VGS=0 VDS=15V, VGS=10V VDS=15V, VGS=10V, TA=150C IG=1.0A, VDS=0 VDS=15V, ID=0.5nA ID=20mA, VGS=0 VGS=10V, VDS=0, f=1.0MHz (2N4859A) VGS=10V, VDS=0, f=1.0MHz (2N4859) VGS=10V, VDS=0, f=1.0MHz (2N4859A) VDD=10V, VGS(OFF)=10V, ID=20mA (2N4859) MAX 0.25 0.5 50 UNITS nA A mA 0.25 nA 0.5 A 10 V 0.75 V 30 4.0 VGS=0, ID=0, f=1.0kHz VGS=10V, VDS=0, f=1.0MHz (2N4859) VDD=10V, VGS(OFF)=10V, VDD=10V, VGS(OFF)=10V, UNITS V VGSR IGF Reverse Gate-Source Voltage Power Dissipation (TA=25C) Operating and Storage Junction Temperature 30 V 25 8.0 pF 4.0 pF 18 pF 10 pF 6.0 ns ID=20mA (2N4859A) 5.0 ns ID=20mA 3.0 ns 25 ns 20 ns VDD=10V, VGS(OFF)=10V, ID=20mA (2N4859) VDD=10V, VGS(OFF)=10V, ID=20mA (2N4859A) R0 (11-June 2012) 2N4859 2N4859A N-CHANNEL SILICON JFET TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Source 2) Drain 3) Gate MARKING: FULL PART NUMBER R0 (11-June 2012) w w w. c e n t r a l s e m i . c o m