current Limiting Diode {N5283 Thru 1N5314. JEDECD FEATURES * LOW COST * SPECIAL SELECTIONS AVAILABLE * HIGH RELIABILITY * SUPERIOR LOT-TO-LOT CONSISTENCY SMALLER CASE SIZE THAN COMPETITION SURFACE MOUNT DEVICES AVAILABLE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N5283 series types are silicon field effect current regulator diodes designed for applications requiring a constant current over a wide voltage range. These devices are manufactured in the cost-effective DO-35 double plug case which provides many benefits ta the user, including space savings and improved thermal characteristics. Special selections of ip (regulator current) are available for critical applications. Lower cost units are available in the CCLO035 series. MAXIMUM RATINGS (T, = 75C) SYMBOL UNIT Peak Operating Voltage POV 100 V Power Dissipation Pp 600 mW Operating and Storage Junction Temperature Ty. TSTG -65 to +200 C ELECTRICAL CHARACTERISTICS (Ta = 25C) REGULATOR DYNAMIC KNEE LIMITING TYPE NO. CURRENT) IMPEDANCE IMPEDANCE VOLTAGE Ip @ VT = 25V ZT @ VT =25V ZK @ VK = 6.0V VL @ iL = 0.8 Ip MIN mA MQ MQ Vv MIN NOM MAX MIN MIN MAX 1N5283 0.198 0.22 0.242 25.0 2.75 1.00 1N5284 0.216 0.24 0.264 19.0 2.35 1.00 1N5285 0.243 0.27 0.297 14.0 1.95 1.00 1N5286 0.270 0.30 0.330 9.0 1.60 1.00 1N5287 0.297 0.33 0.363 6.6 1.35 1.00 1N5288 0.351 0.39 0.429 4.10 1.00 1.05 1N5289 0.387 0.43 0.473 3.30 0.870 1.05 1N5290 0.423 0.47 0.517 2.70 0.750 1.05 1N5291 0.504 0.56 0.616 1.90 0.560 1.10 1N5292 0.558 0.62 0.682 1.55 0.470 1.13 1N5293 0.612 0.68 0.748 1.35 0.400 1.15 1N5294 0.675 0.75 0.825 1.15 0.335 1.20 1N5295 0.738 0.82 0.902 1.00 0.290 1.25 1N5296 0.819 0.91 1.001 0.880 0.240 1.29 1N5297 0.900 1.00 1.10 0.800 0.205 1.35 1N5298 0.990 1.10 1.21 0.700 0.180 1.40 4N5299 1.08. 1.20 1.32 0.640 0.155 1.45 1N5300 1.17 1.30 1.43 0.580 0.135 1.50 1N5301 1.26 1.40 1.54 0.540 0.115 1.55 1N5302 1.35 1.50 1.65 0.510 0.105 1.60 1N5303 1.44 1.60 1.76 0.475 0.092 1.65 1N5304 1.62 1.80 1.98 0.420 0.074 1.75 1N5305 1.80 2.00 2.20 0.395 0.061 1.85 1N5306 1.98 2.20 2.42 0.370 0.052 1.95 1N5307 2.16 2.40 2.64 0.345 0.044 2.00 1N5308 2.43 2.70 2.97 0.320 0.035 2.15 1N5309 2.70 3.00 3.30 0.300 0.029 2.25 1N5310 2.97 3.30 3.63 0.280 0.024 2.35 1N5311 3.24 3.60 3.96 0.265 0.020 2.50 1N5312 3.51 3.90 4.29 0.255 0.017 2.60 1N5313 3.87 4.30 4.73 0.245 0.014 2.75 1N5314 4.23 4.70 5.17 0.235 0.012 2.90 (1) PULSED METHOD. PULSE WIDTH (ms) = 27.5 Ip NOM (mA) central ao Semiconductor Corp. 2.9 rT - T ep eee reer eee | Typical Regulator Current Vs. Voltage "1N5298 cr) 1N5295 < 1N5292 E ~ 1N5289 e z 1N52386 uw c = 1N5233 2 oO ac Oo 0.1 e < = a2 ao uw oc 0.01 Ph 0.4 1.0 10 100 200 , ANODE-CATHODE VOLTAGE (Volts) Typical Regulator current vs. Voitage 10 REGULATOR CURRENT (mA) 10 < - z ua oc oc > 4.0 oc 3 r =< s a oa w a 0.1 -25 25 10 50 75 TEMPERATURE ( C} ANOOE-CATHODE VOLTAGE (Volts) 100 100 125 IN53914 IN5911 IN5908 IN5305 IN5302 1N5299 200 N53 4 341 IN53C8 IN5305 ING 3C2 IN5298 INS5294 1N5290 IN5286 143 Typical Regulator Current vs. Temperature HERMETICALLY SEALED GLASS CASE WITH TINNED COPPER LEADS r - 1.0(25.4) MINIMUM .120(3. 08) | .200(5 5.08) _ 1.0(25.4) MINIMUM _.060(1.52) .090(2.29) Dimensions in Inches (mm) Central Semiconductor Corp.