TLP371,TLP372
2014-09-22
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP371, TLP372
Office Machine
Household Use Equipment
Telecommunication
Solid State Relay
Programmable Controllers
The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide
infrared emitting diode optically coupled to a Darlington connected
photo−transistor which has an integrated base−emitter resistor to
optimize switching speed and elevated temperature characteristics in a
six lead plastic DIP package.
TLP372 has no−base internal connection for high−EMI environments.
• Current transfer ratio: 1000% (min) (IF = 1mA)
• Isolation voltage: 5000 Vrms (min)
• UL recognized: UL1577, file no. E67349
Pin Configurations (top view)
1
2 5
4
3
6
TLP371
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : Base
1
2 5
4
3
6
TLP372
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : NC
TOSHIBA 11−7A8
Weight: 0.4 g (typ.)
Unit: mm
Start of commercial production
1986
/
03
TLP371,TLP372
2014-09-22
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
LED
Forward current IF 60 mA
Forward current derating (Ta ≥ 39°C) ∆IF / °C −0.7 mA / °C
Peak forward current (100μs pulse, 100pps) IFP 1 A
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Detector
Collector−emitter voltage VCEO 300 V
Collector−base voltage (TLP371) VCBO 300 V
Emitter−collector voltage VECO 0.3 V
Emitter−base voltage (TLP371) VEBO 7 V
Collector current IC 150 mA
Power dissipation PC 300 mW
Power dissipation derating (Ta ≥ 25°C) ∆PC / °C −3.0 mW / °C
Junction temperature Tj 125 °C
Storage temperature range Tstg −55 to 125 °C
Operating temperature range Topr −55 to 100 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation PT 350 mW
Total package power dissipation derating (Ta ≥ 25°C) ∆PT / °C −3.5 mW / °C
Isolation voltage (AC, 1minute, R.H. ≤ 60%) (Note 1) BVS 5000 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc.).
Note 1: Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4,5 and 6 shorted
together.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― ― 200 V
Forward current IF ― 16 25 mA
Collector current IC ― ― 120 mA
Operating temperature Topr −25 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP371,TLP372
2014-09-22
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage VF I
F = 10 mA 1.0 1.15 1.3 V
Reverse current IR V
R = 5 V ― ― 10 μA
Capacitance CT V = 0, f = 1 MHz ― 30 ― pF
Detector
Collector−emitter
breakdown voltage V(BR) CEO I
C = 0.1 mA 300 ― ― V
Emitter−collector
breakdown voltage V(BR) ECO I
E = 0.1 mA 0.3 ― ― V
Collector−base
breakdown voltage (TLP371) V(BR) CBO I
C = 0.1 mA 300 ― ― V
Emitter−base
breakdown voltage (TLP371) V(BR) EBO I
E = 0.1 mA 7 ― ― V
Collector dark current ICEO
VCE = 200 V ― 10 200 nA
VCE = 200 V
Ta = 85 °C ― ― 20 μA
Collector dark current (TLP371) ICER
VCE = 200 V
Ta = 85 °C
RBE = 10 MΩ ― 0.5 10 μA
Collector dark current (TLP371) ICBO V
CE = 200 V ― 0.1 ― nA
DC forward current gain (TLP371) hFE VCE = 5 V,
IC = 10 mA ― 7000 ― ―
Capacitance (collector to emitter) CCE V = 0, f = 1 MHz ― 10 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn Typ. Max Unit
Current transfer ratio IC / IF IF = 1 mA, VCE = 1 V 1000 4000 ― %
Saturated CTR IC / IF (sat) IF = 10 mA, VCE = 1 V 500 ― ― %
Base photo−current (TLP371) IPB IF = 1 mA, VCB = 1 V ― 6 ― μA
Collector−emitter saturation voltage VCE (sat)
IC = 10 mA, IF = 1 mA ― ― 1.0
V
IC = 100 mA, IF = 10 mA 0.3 ― 1.2
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Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitance
(input to output) CS VS = 0, f = 1 MHz ― 0.8 ― pF
Isolation resistance RS VS = 500 V 5×1010 1014 ― Ω
Isolation voltage BVS
AC, 1 minute 5000 ― ―
Vrms
AC, 1 second, in oil ― 10000 ―
DC, 1 minute, in oil ― 10000 ― V
dc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Rise time tr
VCC = 10 V
IC = 10 mA
RL = 100Ω
― 40 ―
μs
Fall time tf ― 15 ―
Turn−on time ton ― 50 ―
Turn−off time toff ― 15 ―
Turn−on time tON RL = 180Ω (Fig.1)
RBE = OPEN
VCC = 5 V, IF = 16 mA
― 3 ―
μs
Storage time ts ― 45 ―
Turn−off time tOFF ― 90 ―
Turn−on time tON RL = 180Ω (Fig.1)
RBE = 10 MΩ(TLP371)
VCC = 10 V, IF = 16 mA
― 5 ―
μs
Storage time ts ― 40 ―
Turn−off time tOFF ― 80 ―
Fig.1: Switching time test circuit
IF
RBE
VCC
VCE
RL
IF
VCE
VCC
tON
9V
1V
tOFF
ts
TLP371,TLP372
2014-09-22
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IFP – DR
Pulse forward current
I
FP (mA)
Duty cycle ratio DR
5000
3000
3 3
10−3 3
10
1000
500
30
100
50
300
10−1 10−23
Pulse width
≤ 100μs
Ta = 25°C
100
IF – Ta
Allowable forward current
I
F (mA)
Ambient temperature Ta (℃)
120
100
100
80
80 60
20 40 0 −20
0
60
40
20
PC – Ta
Allowable collector power
dissipation PC (mW)
Ambient temperature Ta (℃)
120
400
100
320
80 60
20 40 0 −20
0
240
160
80
IF – VF
Forward current IF (mA)
Forward voltage VF (V)
100
50
0.6
0.3
5
0.5
30
3
1
10
0.1
0.8 1.0 1.2
1.4 1.6 1.8
Ta = 25°C
IFP – VFP
Pulse forward current IFP (mA)
Pulse forward voltage VFP (V)
1000
500
0.6
3
50
5
300
30
10
100
1
1.0 1.4 1.8 2.2 2.6 3.0
Pulse width ≤ 10μs
Repetitive frequency
=100Hz
Ta = 25°C
Forward voltage temperature
coefficient ∆VF / ∆Ta (m V / ℃)
−3.2
0.1
−2.0
−2.4
−2.8
−0.4
0.5 0.3
−1.6
−1.2
−0.8
1 3 10 30 50
∆VF / ∆Ta – I
F
Forward current IF (mA)
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IC – VCE
Collector current IC (mA)
Collector−emitter voltage VCE (V)
Ta = 25°C
0.6
140
120
100
80
60
40
20
0 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10mA 4mA
2mA
1mA
IF = 0.5mA
IC – IF
Collector current IC (mA)
Forward current IF (mA)
300
100
50
30
10
5
3
1
0.2 1 0.5 3 10 30
50
Ta = 25°C
VCE = 1.2V
1V
Switching Time – RL
Switching time (μs)
1000
500
300
100
50
30
10
5
3
1
Load resistance RL (Ω)
10K
100 300 500 1K 3K 5K 50 30
Ta = 25°C
VCC = 10V
tOFF (IF = 16mA)
tOFF (IF = 1.6mA)
tON (IF = 1.6mA)
tON (IF = 16mA)
IC / IF – IF
Current transfer ration IC / IF (%)
Forward current IF (mA)
50000
30000
10000
5000
300
Ta = 25°C
500
100
3000
1000
0.3 1 3 5 10 30 50
0.5
VCE = 1.2V
1V
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VCE = 1V
IF = 10mA
1mA
Ambient temperature Ta (℃)
Collector current IC (mA)
IC – Ta
120
100 80 60
20 40 0 −20
100
80
60
40
20
0
Collector dark current ICEO (μA)
ICEO – Ta
Ambient temperature Ta (℃)
101
100
10−1
80
60
40
20
0 100
10−2
10−3
VCE = 200V
150V
80V
Ambient temperature Ta (℃)
Collector current IC
IC – Ta
VCE = 1V
80 60
20 40 0 −20
0.4
0.2
100
0.8
0.6
1.0
1.4
1.2
IF = 10mA
1mA
ICEO – VCE
Collector dark current ICEO (μA)
Collector−emitter voltage VCE (V)
101
100
10−1
300
100
50 30 10 500
RBE = OPEN
RBE = 10 MΩ
（
TLP371
）
Ta = 25°C
TLP371,TLP372
2014-09-22
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in this document, and related hardware, software and systems (collectively "Product") without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
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or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for
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