01/99 B-5
2N3954, 2N3955, 2N3956
N-Channel Dual Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Gate Current 50 mA
Total Device Power Dissipation (each side) 250 mW
@ 85°C Case Temperature (both sides) 500 mW
Power Derating (both sides) 4.3 mW/°C
TOÐ71 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate,
5 Source, 6 Drain, 7 Gate
At 25°C free air temperature: 2N3954 2N3955 2N3956 Process NJ16
Static Electrical Characteristics Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 50 – 50 – 50 V IG= – 1µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 – 100 pA VGS = – 30V, VDS = ØV
– 500 – 500 – 500 nA VGS = – 30V, VDS = ØV TA= 125°C
Gate Operating Current IG– 50 – 50 – 50 pA VDS = 20V, ID= 200 µA
– 250 – 250 – 250 nA VDS = 20V, ID= 200 µA TA= 125°C
Gate Source Voltage VGS – 4.2 – 4.2 – 4.2 V VDS = 20V, ID= 50 µA
– 0.5 – 4 – 0.5 – 4 – 0.5 – 4 V VDS = 20V, ID= 200 µA
Gate Source Cutoff Voltage VGS(OFF) – 1 – 4.5 – 1 – 4.5 – 1 – 4.5 V VDS = – 20V, IG= 1 nA
Gate Source Forward Voltage VGS(F) 222VV
DS = ØV, IG= 1 mA
Drain Saturation Current (Pulsed) IDSS 0.5 5 0.5 5 0.5 5 mA VDS = 20V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward gfs 1000 3000 1000 3000 1000 3000 µS VDS = 20V, VGS = ØV f = 1 kHz
Transconductance 1000 1000 1000 µS VDS = 20V, VGS = ØV f = 200 MHz
Common Source Output Capacitance gos 35 35 35 µS VDS = 20V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 444pFV
DS = 20V, VGS = ØV f = 1 MHz
Drain Gate Capacitance Cdgo 1.5 1.5 1.5 pF Vdg = 10V, IS= ØA f = 1 MHz
Common Source Reverse Crss 1.2 1.2 1.2 pF VDS = 20V, VGS = ØV f = 1 MHz
Transfer Capacitance
Noise Figure NF 0.5 0.5 0.5 dB VDS = 20V, VGS = ØV, f = 100 Hz
Rg= 10MΩ
Differential Gate Current | IG1 – IG2 |101010nAV
DS = 20V, ID= 200µA TA= 125°C
Saturation Drain Current Ratio IDSS1/IDSS2 0.95 1 0.95 1 0.95 1 VDS = 20V, VGS = ØV
Differential Gate Source Voltage |VGS1–V
GS2|51015mVV
DS = 20V, ID= 200µA TA= 25°C
Differential Gate Source Voltage ∆VGS1–V
GS2 0.8 2 4 mV/°C VDS = 20V, ID= 200µA to = – 55°C
with Temperature ∆TTA= 25°C
1 2.5 5 mV/°C VDS = 20V, ID= 200µA to = +125°C
Transconductance Ratio gfs1/gfs2 0.97 1 0.97 1 0.97 1 VDS = 20V, ID= 200µA f = 1 kHz
¥ Low and Medium Frequency
Differential Amplifiers
¥ High Input Impedance
Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/14/99 11:29 AM Page B-5
