2007-06-08
3
BC807.../BC808...
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BC807...
IC = 10 mA, IB = 0 , BC808...
V(BR)CEO
45
25
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC807...
IC = 10 µA, IE = 0 , BC808...
V(BR)CBO
50
30
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
50
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0 IEBO - - 100 nA
DC current gain1)
IC = 100 mA, VCE = 1 V, hFE-grp. 16
IC = 100 mA, VCE = 1 V, hFE-grp. 25
IC = 100 mA, VCE = 1 V, hFE grp. 40
IC = 500 mA, VCE = 1 V
hFE
100
160
250
40
160
250
350
-
250
400
630
-
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA VCEsat - - 0.7 V
Base emitter saturation voltage1)
IC = 500 mA, IB = 50 mA VBEsat - - 1.2
1Pulse test: t < 300µs; D < 2%
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