MMBV809LT1G - ON Semiconductor

January, 2006 − Rev. 4 1Publication Order Number:

MMBV809LT1/D

MMBV809LT1

Preferred Device

Silicon Tuning Diode

This device is designed for 900 MHz frequency control and tuning

applications. It provides solid−state reliability in replacement of

mechanical tuning methods.

Features

•Controlled and Uniform Tuning Ratio

•Available in Surface Mount Package

•Available in 8 mm Tape and Reel

•Pb−Free Packages are Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Reverse Voltage VR20 Vdc

Forward Current IF20 mAdc

Total Power Dissipation (Note 1)

@ TA = 25°C

Derate above 25°C

PD225

1.8 mW

mW/°C

Junction Temperature TJ+125 °C

Storage Temperature Range Tstg −55 to +125 °C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR5 Board 1.0 x 0.75 x 0.62 in.

http://onsemi.com

SOT−23 (TO−236)

CASE 318

STYLE 8

Device Package Shipping†

ORDERING INFORMATION

MMBV809LT1 SOT−23 3,000 / Tape & Reel

† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

MMBV809LT1G SOT−23

(Pb−Free) 3,000 / Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.

ANODE 3

CATHODE

4.5−6.1 pF VOLTAGE VARIABLE

CAPACITANCE DIODE

MMBV809LT3 SOT−23 10,000 / Tape & Ree

MMBV809LT3G SOT−23

(Pb−Free) 10,000 / Tape & Ree

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

5K M G

5K = Specific Device Code

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

MMBV809LT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic − All Types Symbol Min Typ Max Unit

Reverse Breakdown Voltage

(IR = 10 mAdc) V(BR)R 20 − − Vdc

Reverse Voltage Leakage Current

(VR = 15 Vdc) IR− − 50 nAdc

Ct, Diode Capacitance

VR = 2.0 Vdc, f = 1.0 MHz

Q, Fi gure of Merit

VR = 3.0 Vdc

f = 500 MHz

CR, Capacitance Ratio

C2/C8

f = 1.0 MHz (Note 2)

Device Min Typ Max Typ Min Max

MMBV809LT1 4.5 5.3 6.1 75 1.8 2.6

2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.

TYPICAL CHARACTERISTICS

Figure 1. Diode Capacitance

011015

VR, REVERSE VOLTAGE (VOLTS)

CT, DIODE CAPACITANCE (pF)

Figure 2. Figure of Merit

f, FREQUENCY (GHz)

Figure 3. Series Resistance

TA, AMBIENT TEMPERATURE (°C)

Q, FIGURE OF MERIT

0.1

1000

100

10 1.0 10

CT, DIODE CAPACITANCE (NORMALIZED)

1.04

−75

1.02

1.00

0.98

0.96 −25 +25 +75 +125

VR = 3.0 Vdc

f = 1.0 MHz

VR = 3 Vdc

TA = 25°C

−50 0 +50 +100

1.03

1.01

0.99

0.97

823 50.5

Figure 4. Diode Capacitance

f, FREQUENCY (GHz)

RS, SERIES RESISTANCE (MHz)

1000

600

400

0.4 0.8 1.2

VR = 3.0 Vdc

f = 1.0 MHz

0.2 0.6 1.0

800

MMBV809LT1

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE, NEW

STANDARD 318−08.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

VIEW C

0.25

SEE VIEW C

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

HE0.35 0.54 0.69 0.014 0.021 0.029

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

MMBV809LT1/D

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