Order this document by BD243B/D SEMICONDUCTOR TECHNICAL DATA . . . designed for use in general purpose amplifier and switching applications. * Collector - Emitter Saturation Voltage -- VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc * Collector Emitter Sustaining Voltage -- VCEO(sus) = 80 Vdc (Min) -- BD243B, BD244B VCEO(sus) = 100 Vdc (Min) -- BD243C, BD244C * High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc * Compact TO-220 AB Package IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII *Motorola Preferred Device 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80 - 100 VOLTS 65 WATTS MAXIMUM RATINGS Symbol BD243B BD244B BD243C BD244C Unit VCEO 80 100 Vdc Collector-Base Voltage VCB 80 100 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current -- Continuous Peak IC 6 10 Adc Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD Rating Collector-Emitter Voltage Operating and Storage Junction Temperature Range Watts TJ, Tstg 65 0.52 W/_C - 65 to + 150 _C CASE 221A-06 TO-220AB THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.92 _C/W PD, POWER DISSIPATION (WATTS) 80 60 40 20 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) Min Max 80 100 -- -- -- 0.7 -- -- 400 400 -- 1.0 30 15 -- -- Unit VCEO(sus) BD243B, BD244B BD243C, BD244C Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICEO Vdc mAdc BD243B, BD243C, BD244B, BD244C Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) Adc ICES BD243B, BD244B BD243C, BD244C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 6.0 Adc, IB = 1.0 Adc) VCE(sat) -- 1.5 Vdc Base-Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) -- 2.0 Vdc Current-Gain -- Bandwidth Product (2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 -- MHz Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 -- -- DYNAMIC CHARACTERISTICS (1) Pulse Test: Pulsewidth (2) fT = hfe * ftest 300 s, Duty Cycle 2.0%. 2.0 VCC - 30 V 0 v 51 D1 0.3 0.2 tr 0.1 0.07 0.05 -4V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE eg. 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA [ [ Figure 2. Switching Time Test Circuit 2 t, TIME ( s) SCOPE RB tr, tf 10 ns DUTY CYCLE = 1.0% 0.7 0.5 RC + 11 V - 9.0 V TJ = 25C VCC = 30 V IC/IB = 10 1.0 25 s 0.03 0.02 0.06 td @ VBE(off) = 5.0 V 0.1 1.0 0.2 0.4 0.6 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 Figure 3. Turn-On Time Motorola Bipolar Power Transistor Device Data 6.0 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) 0.05 0.1 0.07 0.05 RJC(max) = 1.92C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.02 t1 0.03 SINGLE PULSE 0.01 0.02 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response 10 IC, COLLECTOR CURRENT (AMP) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C: TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0.5 ms 5.0 3.0 1.0 ms 2.0 TJ = 150C 1.0 0.5 0.3 5.0 ms SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATION @ TC = 25C CURVES APPLY BELOW RATED VCEO 0.2 v BD243B, BD244B BD243C, BD244C 0.1 5.0 10 20 60 40 80 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 5. Active Region Safe Operating Area 5.0 300 2.0 ts t, TIME ( s) 1.0 TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 0.7 0.5 0.3 0.2 tf 0.1 0.07 0.05 0.06 0.1 1.0 0.2 0.4 0.6 2.0 IC, COLLECTOR CURRENT (AMP) Figure 6. Turn-Off Time Motorola Bipolar Power Transistor Device Data TJ = 25C 200 CAPACITANCE (pF) 3.0 Cib 100 70 Cob 50 4.0 6.0 30 0.5 1.0 2.0 3.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 7. Capacitance 3 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 hFE, DC CURRENT GAIN 300 200 VCE = 2.0 V TJ = 150C 100 70 50 25C 30 20 - 55C 10 7.0 5.0 0.06 0.1 0.2 0.3 0.4 0.6 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 2.0 TJ = 25C 1.6 IC = 1.0 A 0.4 0 6.0 10 20 V, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C VBE(sat) @ IC/IB = 10 VBE @ VCE = 4.0 V VCE(sat) @ IC/IB = 10 0 0.06 0.1 0.3 0.4 0.6 0.2 1.0 2.0 3.0 4.0 6.0 IC, COLLECTOR CURRENT ( A) TJ = 150C 100C 25C 100 4 + 1.0 + 25C to + 150C + 0.5 *VC FOR VCE(sat) 0 - 55C to + 25C - 0.5 + 25C to + 150C - 1.0 - 1.5 VB FOR VBE - 55C to + 25C - 2.0 - 2.5 0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.4 Figure 11. Temperature Coefficients 102 IC = ICES REVERSE 10- 3 - 0.3 - 0.2 - 0.1 + 1.5 Figure 10. "On" Voltages 101 FORWARD 0 + 0.1 + 0.2 + 0.3 1000 *APPLIES FOR IC/IB 5.0 + 2.0 IC, COLLECTOR CURRENT (AMP) VCE = 30 V 10- 2 500 IC, COLLECTOR CURRENT (AMPS) 103 10-1 50 100 200 300 IB, BASE CURRENT (mA) + 2.5 + 0.4 + 0.5 + 0.6 + 0.7 RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) V, VOLTAGE (VOLTS) 1.6 0.4 30 Figure 9. Collector Saturation Region 2.0 0.8 5.0 A 0.8 Figure 8. DC Current Gain 1.2 2.5 A 1.2 0.6 10M VCE = 30 V 1.0M IC = 10 x ICES IC = 2 x ICES 100k IC ICES 10k 1.0k (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 0.1k 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A-06 TO-220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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