S-1009 Series
0.27
A CURRENT CONSUMPTION
VOLTAGE DETECTOR
WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
www.ablicinc.com
© ABLIC Inc., 2009-2017 Rev.5.1_03
1
The S-1009 Series is a super high-accuracy voltage detector developed using CMOS technology. The detection voltage is
fixed internally with an accuracy of 0.5%. It operates with super low current consumption of 270 nA typ.
The release signal can be delayed by setting a capacitor externally. Delay time accuracy is 15%. Two output forms Nch
open-drain and CMOS output are available.
Compared with conventional CMOS voltage detectors, the S-1009 Series is the most suitable for the portable devices due
to the super-low current consumption, super high-accuracy and small packages.
Features
Detection voltage: 0.8 V to 4.6 V (0.1 V step)
Detection voltage accuracy: 0.5% (2.4 V VDET 4.6 V)
12 mV (0.8 V VDET 2.4 V)
Current consumption: 270 nA typ. (1.2 V VDET 2.3 V)
Operation voltage range: 0.6 V to 10.0 V (CMOS output product)
Hysteresis width: 5% 1%
Delay time accuracy: 15% (CD = 4.7 nF)
Output form: Nch open-drain output (active "L")
CMOS output (active "L")
Operation temperature range: Ta = 40°C to 85°C
Lead-free (Sn 100%), halogen-free
Applications
Power monitor and reset for CPU and microcomputer
Constant voltage power monitor for TV, DVD recorder and home appliance
Power supply monitor for portable device such as notebook PC, digital still camera and mobile phone
Packages
SOT-23-5
SC-82AB
SNT-4A
www.ablic.com
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
2
Block Diagrams
1. Nch open-drain output product
VSS
*1
*1
V
REF


OUT
VDD
CD
Delay
circuit
*1
*1. Parasitic diode
Figure 1
2. CMOS output product
VSS
*1
*1
V
REF


OUT
VDD
CD
Delay
circuit
*1
*1
*1. Parasitic diode
Figure 2
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
3
Product Name Structure
Users can select the output form, detection voltage value, and package type for the S-1009 Series. Refer to "1.
Product name" regarding the contents of product name, "2. Packages" regarding the package drawings and "3.
Product name list" regarding details of product name.
1. Product name
S-1009 x xx I - xxxx U
Output form
N: Nch open-drain output (active "L")
C: CMOS output (active "L")
Package abbreviation and IC packing specifications*1
M5T1: SOT-23-5, Tape
N4T1: SC-82AB, Tape
I4T1: SNT-4A, Tape
Detection voltage value
08 to 46
(e.g., when the detection voltage is 1.5 V, it is expressed as 15.)
Environmental code
U: Lead-free (Sn 100%), halogen-free
Operation temperature
I: Ta = 40C to 85C
*1. Refer to the tape drawings.
2. Packages
Table 1 Package Drawing Codes
Package Name Dimension Tape Reel Land
SOT-23-5 MP005-A-P-SD MP005-A-C-SD MP005-A-R-SD
SC-82AB NP004-A-P-SD
NP004-A-C-SD
NP004-A-C-S1 NP004-A-R-SD
SNT-4A PF004-A-P-SD PF004-A-C-SD PF004-A-R-SD PF004-A-L-SD
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
4
3. Product name list
3. 1 Nch open-drain output product
Table 2
Detection Voltage SOT-23-5 SC-82AB SNT-4A
0.8 V 12 mV S-1009N08I-M5T1U S-1009N08I-N4T1U S-1009N08I-I4T1U
0.9 V 12 mV S-1009N09I-M5T1U S-1009N09I-N4T1U S-1009N09I-I4T1U
1.0 V 12 mV S-1009N10I-M5T1U S-1009N10I-N4T1U S-1009N10I-I4T1U
1.1 V 12 mV S-1009N11I-M5T1U S-1009N11I-N4T1U S-1009N11I-I4T1U
1.2 V 12 mV S-1009N12I-M5T1U S-1009N12I-N4T1U S-1009N12I-I4T1U
1.3 V 12 mV S-1009N13I-M5T1U S-1009N13I-N4T1U S-1009N13I-I4T1U
1.4 V 12 mV S-1009N14I-M5T1U S-1009N14I-N4T1U S-1009N14I-I4T1U
1.5 V 12 mV S-1009N15I-M5T1U S-1009N15I-N4T1U S-1009N15I-I4T1U
1.6 V 12 mV S-1009N16I-M5T1U S-1009N16I-N4T1U S-1009N16I-I4T1U
1.7 V 12 mV S-1009N17I-M5T1U S-1009N17I-N4T1U S-1009N17I-I4T1U
1.8 V 12 mV S-1009N18I-M5T1U S-1009N18I-N4T1U S-1009N18I-I4T1U
1.9 V 12 mV S-1009N19I-M5T1U S-1009N19I-N4T1U S-1009N19I-I4T1U
2.0 V 12 mV S-1009N20I-M5T1U S-1009N20I-N4T1U S-1009N20I-I4T1U
2.1 V 12 mV S-1009N21I-M5T1U S-1009N21I-N4T1U S-1009N21I-I4T1U
2.2 V 12 mV S-1009N22I-M5T1U S-1009N22I-N4T1U S-1009N22I-I4T1U
2.3 V 12 mV S-1009N23I-M5T1U S-1009N23I-N4T1U S-1009N23I-I4T1U
2.4 V 0.5% S-1009N24I-M5T1U S-1009N24I-N4T1U S-1009N24I-I4T1U
2.5 V 0.5% S-1009N25I-M5T1U S-1009N25I-N4T1U S-1009N25I-I4T1U
2.6 V 0.5% S-1009N26I-M5T1U S-1009N26I-N4T1U S-1009N26I-I4T1U
2.7 V 0.5% S-1009N27I-M5T1U S-1009N27I-N4T1U S-1009N27I-I4T1U
2.8 V 0.5% S-1009N28I-M5T1U S-1009N28I-N4T1U S-1009N28I-I4T1U
2.9 V 0.5% S-1009N29I-M5T1U S-1009N29I-N4T1U S-1009N29I-I4T1U
3.0 V 0.5% S-1009N30I-M5T1U S-1009N30I-N4T1U S-1009N30I-I4T1U
3.1 V 0.5% S-1009N31I-M5T1U S-1009N31I-N4T1U S-1009N31I-I4T1U
3.2 V 0.5% S-1009N32I-M5T1U S-1009N32I-N4T1U S-1009N32I-I4T1U
3.3 V 0.5% S-1009N33I-M5T1U S-1009N33I-N4T1U S-1009N33I-I4T1U
3.4 V 0.5% S-1009N34I-M5T1U S-1009N34I-N4T1U S-1009N34I-I4T1U
3.5 V 0.5% S-1009N35I-M5T1U S-1009N35I-N4T1U S-1009N35I-I4T1U
3.6 V 0.5% S-1009N36I-M5T1U S-1009N36I-N4T1U S-1009N36I-I4T1U
3.7 V 0.5% S-1009N37I-M5T1U S-1009N37I-N4T1U S-1009N37I-I4T1U
3.8 V 0.5% S-1009N38I-M5T1U S-1009N38I-N4T1U S-1009N38I-I4T1U
3.9 V 0.5% S-1009N39I-M5T1U S-1009N39I-N4T1U S-1009N39I-I4T1U
4.0 V 0.5% S-1009N40I-M5T1U S-1009N40I-N4T1U S-1009N40I-I4T1U
4.1 V 0.5% S-1009N41I-M5T1U S-1009N41I-N4T1U S-1009N41I-I4T1U
4.2 V 0.5% S-1009N42I-M5T1U S-1009N42I-N4T1U S-1009N42I-I4T1U
4.3 V 0.5% S-1009N43I-M5T1U S-1009N43I-N4T1U S-1009N43I-I4T1U
4.4 V 0.5% S-1009N44I-M5T1U S-1009N44I-N4T1U S-1009N44I-I4T1U
4.5 V 0.5% S-1009N45I-M5T1U S-1009N45I-N4T1U S-1009N45I-I4T1U
4.6 V 0.5% S-1009N46I-M5T1U S-1009N46I-N4T1U S-1009N46I-I4T1U
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
5
3. 2 CMOS output product
Table 3
Detection Voltage SOT-23-5 SC-82AB SNT-4A
0.8 V 12 mV S-1009C08I-M5T1U S-1009C08I-N4T1U S-1009C08I-I4T1U
0.9 V 12 mV S-1009C09I-M5T1U S-1009C09I-N4T1U S-1009C09I-I4T1U
1.0 V 12 mV S-1009C10I-M5T1U S-1009C10I-N4T1U S-1009C10I-I4T1U
1.1 V 12 mV S-1009C11I-M5T1U S-1009C11I-N4T1U S-1009C11I-I4T1U
1.2 V 12 mV S-1009C12I-M5T1U S-1009C12I-N4T1U S-1009C12I-I4T1U
1.3 V 12 mV S-1009C13I-M5T1U S-1009C13I-N4T1U S-1009C13I-I4T1U
1.4 V 12 mV S-1009C14I-M5T1U S-1009C14I-N4T1U S-1009C14I-I4T1U
1.5 V 12 mV S-1009C15I-M5T1U S-1009C15I-N4T1U S-1009C15I-I4T1U
1.6 V 12 mV S-1009C16I-M5T1U S-1009C16I-N4T1U S-1009C16I-I4T1U
1.7 V 12 mV S-1009C17I-M5T1U S-1009C17I-N4T1U S-1009C17I-I4T1U
1.8 V 12 mV S-1009C18I-M5T1U S-1009C18I-N4T1U S-1009C18I-I4T1U
1.9 V 12 mV S-1009C19I-M5T1U S-1009C19I-N4T1U S-1009C19I-I4T1U
2.0 V 12 mV S-1009C20I-M5T1U S-1009C20I-N4T1U S-1009C20I-I4T1U
2.1 V 12 mV S-1009C21I-M5T1U S-1009C21I-N4T1U S-1009C21I-I4T1U
2.2 V 12 mV S-1009C22I-M5T1U S-1009C22I-N4T1U S-1009C22I-I4T1U
2.3 V 12 mV S-1009C23I-M5T1U S-1009C23I-N4T1U S-1009C23I-I4T1U
2.4 V 0.5% S-1009C24I-M5T1U S-1009C24I-N4T1U S-1009C24I-I4T1U
2.5 V 0.5% S-1009C25I-M5T1U S-1009C25I-N4T1U S-1009C25I-I4T1U
2.6 V 0.5% S-1009C26I-M5T1U S-1009C26I-N4T1U S-1009C26I-I4T1U
2.7 V 0.5% S-1009C27I-M5T1U S-1009C27I-N4T1U S-1009C27I-I4T1U
2.8 V 0.5% S-1009C28I-M5T1U S-1009C28I-N4T1U S-1009C28I-I4T1U
2.9 V 0.5% S-1009C29I-M5T1U S-1009C29I-N4T1U S-1009C29I-I4T1U
3.0 V 0.5% S-1009C30I-M5T1U S-1009C30I-N4T1U S-1009C30I-I4T1U
3.1 V 0.5% S-1009C31I-M5T1U S-1009C31I-N4T1U S-1009C31I-I4T1U
3.2 V 0.5% S-1009C32I-M5T1U S-1009C32I-N4T1U S-1009C32I-I4T1U
3.3 V 0.5% S-1009C33I-M5T1U S-1009C33I-N4T1U S-1009C33I-I4T1U
3.4 V 0.5% S-1009C34I-M5T1U S-1009C34I-N4T1U S-1009C34I-I4T1U
3.5 V 0.5% S-1009C35I-M5T1U S-1009C35I-N4T1U S-1009C35I-I4T1U
3.6 V 0.5% S-1009C36I-M5T1U S-1009C36I-N4T1U S-1009C36I-I4T1U
3.7 V 0.5% S-1009C37I-M5T1U S-1009C37I-N4T1U S-1009C37I-I4T1U
3.8 V 0.5% S-1009C38I-M5T1U S-1009C38I-N4T1U S-1009C38I-I4T1U
3.9 V 0.5% S-1009C39I-M5T1U S-1009C39I-N4T1U S-1009C39I-I4T1U
4.0 V 0.5% S-1009C40I-M5T1U S-1009C40I-N4T1U S-1009C40I-I4T1U
4.1 V 0.5% S-1009C41I-M5T1U S-1009C41I-N4T1U S-1009C41I-I4T1U
4.2 V 0.5% S-1009C42I-M5T1U S-1009C42I-N4T1U S-1009C42I-I4T1U
4.3 V 0.5% S-1009C43I-M5T1U S-1009C43I-N4T1U S-1009C43I-I4T1U
4.4 V 0.5% S-1009C44I-M5T1U S-1009C44I-N4T1U S-1009C44I-I4T1U
4.5 V 0.5% S-1009C45I-M5T1U S-1009C45I-N4T1U S-1009C45I-I4T1U
4.6 V 0.5% S-1009C46I-M5T1U S-1009C46I-N4T1U S-1009C46I-I4T1U
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
6
Pin Configurations
1. SOT-23-5
132
45
Top view
Figure 3
Table 4
Pin No. Symbol Description
1 OUT Voltage detection output pin
2 VDD Input voltage pin
3 VSS GND pin
4
NC*1 No connection
5 CD Connection pin for delay capacitor
*1. The NC pin is electrically open.
The NC pin can be connected to the VDD pin or the VSS pin.
2. SC-82AB
12
34
Top view
Figure 4
Table 5
Pin No. Symbol Description
1 VSS GND pin
2 VDD Input voltage pin
3 CD Connection pin for delay capacitor
4 OUT Voltage detection output pin
3. SNT-4A
4
32
1
Top view
Figure 5
Table 6
Pin No. Symbol Description
1 VSS GND pin
2 OUT Voltage detection output pin
3 CD Connection pin for delay capacitor
4 VDD Input voltage pin
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
7
Absolute Maximum Ratings
Table 7
(Ta = 25°C unless otherwise specified)
Item Symbol Absolute Maximum Rating Unit
Power supply voltage VDDVSS 12 V
CD pin input voltage VCD V
SS0.3 to VDD 0.3 V
Output voltage Nch open-drain output product VOUT VSS0.3 to 12.0 V
CMOS output product VSS0.3 to VDD 0.3 V
Output current IOUT 50 mA
Power dissipation
SOT-23-5
PD
600*1 mW
SC-82AB 350*1 mW
SNT-4A 300*1 mW
Operation ambient temperature To
pr
40 to 85 °C
Storage temperature Tst
g
40 to 125 °C
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm 76.2 mm t1.6 mm
(2) Name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
0 50 100 150
0
Power Dissipation (PD) [mW]
Ambient Temperature (Ta) [C]
200
100
300
500
700
SOT-23-5
SC-82AB
400
600
SNT-4A
Figure 6 Power Dissipation of Package (When Mounted on Board)
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
8
Electrical Characteristics
1. Nch open-drain output product
Table 8
(Ta = 25°C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
Circuit
Detection voltage*1 VDET
0.8 V VDET 2.4 V VDET(S)
0.012 VDET(S) VDET(S)
0.012 V 1
2.4 V VDET 4.6 V VDET(S)
0.995 VDET(S) VDET(S)
1.005 V 1
Hysteresis width VHYS VDET
0.04
VDET
0.05
VDET
0.06 V 1
Current
consumption ISS V
DD = VDET 0.6 V
0.8 V VDET 1.2 V 0.30 0.90 A 2
1.2 V VDET 2.3 V 0.27 0.90 A 2
2.3 V VDET 3.6 V 0.42 0.90 A 2
3.6 V VDET 4.6 V 0.39 0.90 A 2
Operation voltage VDD 0.7 10.0 V 1
Output current IOUT
Output transistor
Nch
VDS*2 = 0.5 V
VDD = 0.7 V
S-1009N08 to 14 0.14 0.40 mA 3
VDD = 1.2 V
S-1009N15 to 46 0.73 1.33 mA 3
VDD = 2.4 V
S-1009N27 to 46 1.47 2.39 mA 3
Leakage current ILEAK
Output transistor
Nch
VDD = 10.0 V, VOUT = 10.0 V
0.08 A 3
Delay time tD C
D = 4.7 nF 22.1 26.0 29.9 ms 4
Detection voltage
temperature
coefficient*3
VDET
Ta VDET Ta = 40°C to 85°C
0.8 V VDET 0.9 V 180 430 ppm/°C 1
0.9 V VDET 1.2 V 120 370 ppm/°C 1
1.2 V VDET 4.6 V 100 350 ppm/°C 1
*1. VDET: Actual detection voltage value, VDET(S): Set detection voltage value (the center value of the detection voltage
range in Table 2.)
*2. VDS: Drain-to-source voltage of the output transistor
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
VDET
Ta []
mV/°C *1 = VDET(S) (typ.)[]
V*2 VDET
Ta VDET []
ppm/°C *3 1000
*1. Temperature change of the detection voltage
*2. Set detection voltage
*3. Detection voltage temperature coefficient
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
9
2. CMOS output product
Table 9
(Ta = 25°C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
Circuit
Detection voltage*1 VDET
0.8 V VDET 2.4 V VDET(S)
0.012 VDET(S) VDET(S)
0.012 V 1
2.4 V VDET 4.6 V VDET(S)
0.995 VDET(S) VDET(S)
1.005 V 1
Hysteresis width VHYS VDET
0.04
VDET
0.05
VDET
0.06 V 1
Current
consumption ISS V
DD = VDET 0.6 V
0.8 V VDET 1.2 V 0.30 0.90 A 2
1.2 V VDET 2.3 V 0.27 0.90 A 2
2.3 V VDET 3.6 V 0.42 0.90 A 2
3.6 V VDET 4.6 V 0.39 0.90 A 2
Operation voltage VDD 0.6 10.0 V 1
Output current IOUT
Output transistor
Nch
VDS*2 = 0.5 V
VDD = 0.7 V
S-1009C08 to 14 0.14 0.40 mA 3
VDD = 1.2 V
S-1009C15 to 46 0.73 1.33 mA 3
VDD = 2.4 V
S-1009C27 to 46 1.47 2.39 mA 3
Output transistor
Pch
VDS*2 = 0.5 V
VDD = 4.8 V
S-1009C08 to 39 1.62 2.60 mA 5
VDD = 6.0 V
S-1009C40 to 46 1.78 2.86 mA 5
Delay time tD C
D = 4.7 nF 22.1 26.0 29.9 ms 4
Detection voltage
temperature
coefficient*3
VDET
Ta VDET Ta = 40°C to 85°C
0.8 V VDET 0.9 V 180 430 ppm/°C 1
0.9 V VDET 1.2 V 120 370 ppm/°C 1
1.2 V VDET 4.6 V 100 350 ppm/°C 1
*1. VDET: Actual detection voltage value, VDET(S): Set detection voltage value (the center value of the detection voltage
range in Table 3.)
*2. VDS: Drain-to-source voltage of the output transistor
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
VDET
Ta []
mV/°C *1 = VDET(S) (typ.)[]
V*2 VDET
Ta VDET []
ppm/°C *3 1000
*1. Temperature change of the detection voltage
*2. Set detection voltage
*3. Detection voltage temperature coefficient
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
10
Test Circuits
VDD VDD
VSS
OUT
R*1
100 k
V
V
CD

VDD
OUT
A
VDD
VSS CD
*1. R is unnecessary for CMOS output product.
Figure 7 Test Circuit 1 Figure 8 Test Circuit 2
VDS
VDD
AV
V
VDD
VSS CD
OUT


P.G.
VDD
VSS
OUT
R*1
100 k
CD
Oscilloscope
*1. R is unnecessary for CMOS output product.
Figure 9 Test Circuit 3 Figure 10 Test Circuit 4
VDD
VDS
AV
V
VDD
VSS CD
OUT


Figure 11 Test Circuit 5
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
11
Timing Charts
1. Nch open-drain output product
V
OUT
VDD
VSS
R
100 k
Release voltage (VDET)
Detection voltage (VDET)
VDD
VSS
Minimum operation voltage
Hysteresis width
(VHYS)
VDD
VSS
CD
Output from OUT pin
tD

Figure 12
2. CMOS output product
tD
V
VDD
VSS
Release voltage (VDET)
Detection voltage (VDET)
VDD
VSS
Minimum operation voltage
Hysteresis width
(VHYS)
Output from OUT pin
VSS
VDD
OUT CD
Remark When VDD is the minimum operation voltage or less, the output voltage from the OUT pin is indefinite
in the shaded area.
Figure 13
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
12
Operation
1. Basic operation: CMOS output (active "L") product
(1) When the power supply voltage (VDD) is the release voltage (VDET) or more, the Nch transistor is OFF and
the Pch transistor is ON to output VDD ("H"). Since the Nch transistor N1 in Figure 14 is OFF, the comparator
input voltage is (RB RC ) VDD
RA RB RC .
(2) Although VDD decreases to VDET or less, VDD is output when VDD is the detection voltage (VDET) or more.
When VDD decreases to VDET or less (point A in Figure 15), the Nch transistor is ON and the Pch transistor
is OFF so that VSS is output. At this time, the Nch transistor N1 in Figure 14 is turned on, and the input
voltage to the comparator is RB VDD
RA RB .
(3) The output is indefinite by decreasing VDD to the IC’s minimum operation voltage or less. If the output is
pulled up, it will be VDD.
(4) VSS is output by increasing VDD to the minimum operation voltage or more. Although VDD exceeds VDET and
VDD is less than VDET, the output is VSS.
(5) When increasing VDD to VDET or more (point B in Figure 15), the Nch transistor is OFF and the Pch
transistor is ON so that VDD is output. At this time, VDD is output from the OUT pin after the passage of the
delay time (tD).
VSS
*1
*1
V
REF


OUT
VDD
CD
Delay
circuit
*1
*1
C
D
Pch
Nch
N1
R
C
R
A
R
B
*1. Parasiteic diode
Figure 14 Operation 1
Hysteresis width
(V
HYS
)
A
BV
DD
V
SS
Minimum operation voltage
Output from OUT pin
V
DD
V
SS
(1) (2) (3) (5) (4)
Release voltage (V
DET
)
Detection voltage (V
DET
)
t
D
Figure 15 Operation 2
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A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
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EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
13
2. Delay circuit
The delay circuit delays the output signal to the OUT pin from the time at which the power supply voltage (VDD)
exceeds the release voltage (VDET) when VDD is turned on. The output signal is not delayed when VDD decreases
to the detection voltage (VDET) or less (refer to "Figure 15 Operation 2").
The delay time (tD) is determined by the time constant of the built-in constant current (approx. 100 nA) and the
attached delay capacitor (CD), or the delay time (tD0) when the CD pin is open, and calculated from the following
equation. When the CD value is sufficiently large, the tD0 value can be disregarded.
tD [ms] = Delay coefficient CD [nF] tD0 [ms]
Table 10 Delay Coefficient
Operation
Temperature
Delay Coefficient
Min. Typ. Max.
Ta = 85°C 2.82 4.20 5.72
Ta = 25°C 4.70 5.47 6.24
Ta = 40°C 5.64 8.40 12.01
Table 11 Delay Time
Operation Temperature Delay Time (tD0)
Min. Typ. Max.
Ta = 40°C to 85°C 0.01 ms 0.10 ms 0.24 ms
Caution 1. When the CD pin is open, a double pulse shown in Figure 16 may appear at release.
To avoid the double pulse, attach 100 pF or larger capacitor to the CD pin. Do not apply
voltage to the CD pin from the exterior.
VOUT
Time
Figure 16
2. Mounted board layout should be made in such a way that no current flows into or flows from
the CD pin since the impedance of the CD pin is high, otherwise correct delay time cannot be
provided.
3. There is no limit for the capacitance of CD as long as the leakage current of the capacitor can
be ignored against the built-in constant current value. Leakage current causes deviation in
delay time. When the leakage current is larger than the built-in constant current, no release
takes place.
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A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
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EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
14
3. Other characteristics
3. 1 Temperature characteristics of detection voltage
The shaded area in Figure 17 shows the temperature characteristics of detection voltage in the operation
temperature range.
40 25
0.945 mV/°C
V
DET
[V]
85 Ta [°C]
0.945 mV/°C
V
DET25*1
*1. VDET25 is an actual detection voltage value at Ta = 25°C.
Figure 17 Temperature Characteristics of Detection Voltage (Example for VDET = 2.7 V)
3. 2 Temperature characteristics of release voltage
The temperature change VDET
Ta of the release voltage is calculated by using the temperature change
VDET
Ta of the detection voltage as follows:
VDET
Ta = VDET
VDET VDET
Ta
The temperature change of the release voltage and the detection voltage has the same sign consequently.
3. 3 Temperature characteristics of hysteresis voltage
The temperature change of the hysteresis voltage is expressed as VDET
Ta VDET
Ta and is calculated as
follows:
VDET
Ta VDET
Ta = VHYS
VDET VDET
Ta
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A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
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EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
15
Standard Circuit
VDD
OUT
VSS
R*1
100 k
CD
*2
CD
*1. R is unnecessary for CMOS output product.
*2. The delay capacitor (CD) should be connected directly to the CD pin and the VSS pin.
Figure 18
Caution The above connection diagram and constant will not guarantee successful operation.
Perform thorough evaluation using the actual application to set the constant.
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A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
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EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
16
Explanation of Terms
1. Detection voltage (VDET)
The detection voltage is a voltage at which the output in Figure 21 turns to "L". The detection voltage varies slightly
among products of the same specification. The variation of detection voltage between the specified minimum
(VDET min.) and the maximum (VDET max.) is called the detection voltage range (refer to Figure 19).
Example: In the S-1009C15, the detection voltage is either one in the range of 1.488 V VDET 1.512 V.
This means that some S-1009C15 have VDET = 1.488 V and some have VDET = 1.512 V.
2. Release voltage (VDET)
The release voltage is a voltage at which the output in Figure 21 turns to "H". The release voltage varies slightly
among products of the same specification. The variation of release voltages between the specified minimum (VDET
min.) and the maximum (VDET max.) is called the release voltage range (refer to Figure 20). The range is
calculated from the actual detection voltage (VDET) of a product and is in the range of VDET 1.04 VDET VDET
1.06.
Example: For the S-1009C15, the release voltage is either one in the range of 1.548 V VDET 1.602 V.
This means that some S-1009C15 have VDET = 1.548 V and some have VDET = 1.602 V.
Detection voltage
Detection voltage
range
V
DD
V
DET
min.
V
DET
max.
OUT
Release voltage
VDD
VDET min.
VDET max.
OUT
Delay time
Release voltage
range
Figure 19 Detection Voltage Figure 20 Release Voltage
V
R
*1
100 k
V
DD
V
CD
VSS
VDD OUT
C
D
*1. R is unnecessary for CMOS output product.
Figure 21 Test Circuit of Detection Voltage and Release Voltage
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A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
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EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
17
3. Hysteresis width (VHYS)
The hysteresis width is the voltage difference between the detection voltage and the release voltage (the voltage at
point B the voltage at point A = VHYS in "Figure 15 Operation 2"). Setting the hysteresis width between the
detection voltage and the release voltage, prevents malfunction caused by noise on the input voltage.
4. Delay time (tD)
The delay time in the S-1009 Series is a period from the input voltage to the VDD pin exceeding the release voltage
(VDET) until the output from the OUT pin inverts. The delay time changes according to the delay capacitor (CD).
t
D
V
DD
OUT
V
DET
Figure 22 Delay Time
5. Feed-through current
Feed-through current is a current that flows instantaneously at the time of detection and release of a voltage
detector. The feed-through current is large in CMOS output product, small in Nch open-drain output product.
6. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 23), taking a CMOS active "L"
product for example, the feed-through current which is generated when the output goes from "L" to "H" (release)
causes a voltage drop equal to [feed-through current] [input resistance] across the resistor. When the input
voltage drops below the detection voltage (VDET) as a result, the output voltage goes to low level. In this state, the
feed-through current stops and its resultant voltage drop disappears, and the output goes from "L" to "H". The
feed-through current is then generated again, a voltage drop appears, and repeating the process finally induces
oscillation.
OUT
VSS
VDD
R
B
R
A
V
IN
S-1009C
Figure 23 Example for Bad Implementation Due to Detection Voltage Change
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A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
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EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
18
Precautions
Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
In CMOS output product of the S-1009 Series, the feed-through current flows at the detection and the release. If the
input impedance is high, oscillation may occur due to the voltage drop by the feed-through current during releasing.
In CMOS output product oscillation may occur when a pull-down resistor is used, and falling speed of the power
supply voltage (VDD) is slow near the detection voltage.
When designing for mass production using an application circuit described herein, the product deviation and
temperature characteristics of the external parts should be taken into consideration. ABLIC Inc. shall not bear any
responsibility for patent infringements related to products using the circuits described herein.
ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement by
products including this IC of patents owned by a third party.
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A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
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EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
19
Characteristics (Typical Data)
1. Detection voltage (VDET) vs. Temperature (Ta)
S-1009N08
0.90
0.85
0.80
0.75
0.70
VDET [V]
Ta [°C]
40 85
25 250 7550
+VDET
VDET
S-1009N11
1.20
1.15
1.10
1.05
1.00
VDET [V]
Ta [°C]
40 85
25 250 7550
+VDET
VDET
S-1009N12
40
V
DET
[V]
1.00
Ta [°C]
1.40
1.10
1.20
1.30
85
25 250 7550
+V
DET
V
DET
S-1009N46
40
V
DET
[V]
4.20
Ta [°C]
5.00
4.40
4.60
4.80
85
25 250 7550
+V
DET
V
DET
2. Hysteresis width (VHYS) vs. Temperature (Ta)
S-1009N08
8
3
40
Ta [°C]
7
6
5
4
V
HYS
[%]
40 85
25 250 7550
S-1009N11
8
3
40
Ta [°C]
7
6
5
4
V
HYS
[%]
40 85
25 250 7550
S-1009N12
40
V
HYS
[%]
3
Ta [°C]
8
4
5
6
7
85
25 250 7550
S-1009N46
40
V
HYS
[%]
3
Ta [°C]
8
4
5
6
7
85
25 250 7550
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A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
20
3. Current consumption (ISS) vs. Input voltage (VDD)
S-1009C08 Ta = 25°C
1.50
1.25
1.00
0.75
0.50
0.25
0
0246810
I
SS
[μA]
V
DD
[V]
S-1009C11 Ta = 25°C
1.00
0
0246810
I
SS
[μA]
V
DD
[V]
0.75
0.50
0.25
S-1009C12 Ta = 25°C
0
ISS [μA]
0
VDD [V]
1.0
0.50
0.25
0.75
104628
S-1009C46 Ta = 25°C
0
ISS [μA]
0
VDD [V]
1.0
0.50
0.25
0.75
104628
4.
Current consumption (I
SS
) vs. Temperature (Ta)
S-1009N08 VDD = VDET 0.6 V
1.00
0.75
0.50
0.25
0
Ta [°C]
ISS [μA]
40 85
25 250 7550
S-1009N11 VDD = VDET 0.6 V
1.00
0.75
0.50
0.25
0
Ta [°C]
ISS [μA]
40 85
25 250 7550
S-1009N12 VDD = VDET 0.6 V
40
I
SS
[μA]
0
Ta [°C]
1.00
0.25
0.50
0.75
85
25 250 7550
S-1009N46 VDD = VDET 0.6 V
40
I
SS
[μA]
0
Ta [°C]
1.00
0.25
0.50
0.75
85
25 250 7550
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A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
21
5. Nch transistor output current (IOUT)
vs.
VDS 6. Pch transistor output current (IOUT)
vs.
VDS
S-1009N46 Ta = 25°C
0
I
OUT
[mA]
0
V
DS
[V]
15.0
5.0
2.5
10.0
7.5
12.5
4.01.0 1.50.5 3.0 3.52.52.0
V
DD
= 3.6 V
2.4 V
1.2 V
1.0 V
S-1009C08 Ta = 25°C
0
IOUT [mA]
0
VDS [V]
40.0
10.0
30.0
20.0
10.04.02.0 8.06.0
VDD = 8.4 V
7.2 V
6.0 V
4.8 V
3.6 V
2.4 V
1.2 V
7. Nch transistor output current (IOUT)
vs.
Input voltage (VDD)
8. Pch transistor output current (IOUT)
vs.
Input voltage (VDD)
S-1009N46 VDS = 0.5 V
0
I
OUT
[mA]
0
V
DD
[V]
4.0
1.0
3.0
2.0
6.03.02.01.0 5.04.0
Ta = 40°C
+25°C
+85°C
S-1009C08 VDS = 0.5 V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0246810
V
DD
[V]
I
OUT
[mA]
Ta = 40°C
+25°C
+85°C
Remark VDS: Drain-to-source voltage of the output transistor
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A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
22
9. Minimum operation voltage (VOUT)
vs.
Input voltage (VDD)
S-1009N08 Pull-up to VDD
Pull-up resistance: 100 k
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0
V
DD
[V]
V
OUT
[V]
Ta = 40°C
+25°C
+85°C
S-1009N11 Pull-up to VDD
Pull-up resistance: 100 k
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
VDD [V]
VOUT [V]
Ta = 40°C
+25°C
+85°C
S-1009N12 Pull-up to VDD
Pull-up resistance: 100 k
0
VOUT [V]
0
VDD [V]
1.6
0.4
1.2
0.8
1.40.80.60.40.2 1.21.0
Ta = 40°C
+25°C
+85°C
S-1009N46 Pull-up to VDD
Pull-up resistance: 100 k
0
VOUT [V]
0
VDD [V]
6.0
1.0
3.0
2.0
4.0
5.0
5.04.03.02.01.0
Ta = 40°C
+25°C
+85°C
S-1009N08 Pull-up to 10 V
Pull-up resistance: 100 k
12.0
10.0
8.0
6.0
4.0
2.0
0
0 0.2 0.4 0.6 0.8 1.0
VDD [V]
VOUT [V]
Ta = 40°C
+25°C
+85°C
S-1009N11 Pull-up to 10 V
Pull-up resistance: 100 k
12.0
0
0 0.2 0.4 0.6 0.8 1.0 1.2
V
DD
[V]
V
OUT
[V]
10.0
8.0
6.0
4.0
2.0
Ta = 40°C
+25°C
+85°C
S-1009N12 Pull-up to 10 V
Pull-up resistance: 100 k
0
V
OUT
[V]
0
V
DD
[V]
12.0
2.0
8.0
6.0
10.0
4.0
1.40.80.60.40.2 1.21.0
Ta = 40°C
+25°C
+85°C
S-1009N46 Pull-up to 10 V
Pull-up resistance: 100 k
0
V
OUT
[V]
0
V
DD
[V]
12.0
2.0
6.0
4.0
8.0
10.0
5.04.03.02.01.0
Ta = 40°C
+25°C
+85°C
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A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
23
10. Dynamic response
vs.
Output pin capacitance (COUT) (CD pin; open)
S-1009C08
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
1
0.01
0.1
0.10.0001 0.010.001
t
PLH
t
PHL
S-1009N08
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
10
1
0.01
0.1
0.10.0001 0.010.001
t
PLH
t
PHL
S-1009C11
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
1
0.01
0.1
0.10.0001 0.010.001
t
PLH
t
PHL
S-1009N11
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
10
1
0.01
0.1
0.10.0001 0.010.001
t
PLH
t
PHL
S-1009C12
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
1
0.01
0.1
0.10.0001 0.010.001
t
PLH
t
PHL
S-1009N12
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
10
1
0.01
0.1
0.10.0001 0.010.001
t
PLH
t
PHL
S-1009C46
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
1
0.01
0.1
0.10.0001 0.010.001
t
PLH
t
PHL
S-1009N46
0.00001
Response time [ms]
0.001
Output pin capacitance [μF]
10
1
0.01
0.1
0.10.0001 0.010.001
t
PLH
t
PHL
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A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
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EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
24
VIH
*1
Input voltage
VIL
*2
VDD
*3
tPHL tPLH
1 s1 s
VDD
*3 10%
VDD
*3 90%
Output voltage
*1. VIH = 10 V
*2. VIL = 0.7 V
*3. CMOS output product: VDD
Nch open-drain product: VDD1
V
R
*1
100 k
C
OUT
V
DD
V
CD V
DD1*1
VDD OUT
VSS
*1. R and VDD1 are unnecessary for CMOS output
product.
Figure 24 Test Condition of Response Time Figure 25 Test Circuit of Response Time
Caution 1. The above connection diagram and constant will not guarantee successful operation.
Perform thorough evaluation using the actual application to set the constant.
2. When the CD pin is open, a double pulse may appear at release.
To avoid the double pulse, attach 100 pF or more capacitor to the CD pin.
Response time when detecting (tPHL) is not affected by CD pin capacitance. Besides, response
time when releasing (tPLH) can be set the delay time by attaching the CD pin.
Refer to "11. Delay time (tD) vs. CD pin capacitance (CD) (without output pin capacitance)" for
details.
11. Delay time (tD)
vs.
CD pin capacitance (CD) (without output pin capacitance)
S-1009N08 Ta = 25°C
0.1
t
D
[ms]
0.1
1
C
D
[nF]
10000
10
1000
100
10001 10010
S-1009N11 Ta = 25°C
0.1
t
D
[ms]
0.1
1
C
D
[nF]
10000
10
1000
100
10001 10010
S-1009N12 Ta = 25°C
0.1
t
D
[ms]
C
D
[nF]
10001 10010
0.1
1
10000
10
1000
100
S-1009N46 Ta = 25°C
0.1
t
D
[ms]
C
D
[nF]
10001 10010
0.1
1
10000
10
1000
100
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A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
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EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
25
12. Delay time (tD)
vs.
Temperature (Ta)
S-1009N08 CD = 4.7 nF
50
0
Ta [°C]
40
30
20
10
t
D
[ms]
40 85
25 250 7550
S-1009N11 CD = 4.7 nF
50
0
Ta [°C]
40
30
20
10
t
D
[ms]
40 85
25 250 7550
S-1009N12 CD = 4.7 nF
40
t
D
[ms]
0
Ta [°C]
50
20
10
30
40
85
25 250 7550
S-1009N46 CD = 4.7 nF
40
t
D
[ms]
0
Ta [°C]
50
20
10
30
40
85
25 250 7550
1 s
t
D
V
DD
90%
Input voltage
Output voltage
V
IL*2
V
SS
V
IH*1
*1. VIH = 10 V
*2. VIL = 0.7 V
V
R
*1
100 k
V
DD
V
CD
VSS
VDD OUT
C
D
*1. R is unnecessary for CMOS output product.
Figure 26 Test Condition for Delay Time Figure 27 Test Circuit for Delay Time
Caution The above connection diagram and constant will not guarantee successful operation.
Perform thorough evaluation using the actual application to set the constant.
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
26
Application Circuit Examples
1. Microcomputer reset circuits
In microcomputers, when the power supply voltage is lower than the guaranteed operation voltage, an unspecified
operation may be performed or the contents of the memory register may be lost. When power supply voltage
returns to the normal level, the microcomputer needs to be initialized. Otherwise, the microcomputer may
malfunction after that. Reset circuits to protect microcomputer in the event of current being momentarily switched
off or lowered.
Using the S-1009 Series which has the low operation voltage, a high accuracy detection voltage and hysteresis,
reset circuits can be easily constructed as seen in Figure 28 and Figure 29.
VSS
VDD
Microcomputer
S-1009C
VSS
VDD1 VDD2
Microcomputer
S-1009N
Figure 28 Example of Reset Circuit
(CMOS Output Product)
Figure 29 Example of Reset Circuit
(Nch Open-drain Output Product)
Caution The above connection diagram and constant will not guarantee successful operation.
Perform thorough evaluation using the actual application to set the constant.
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A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
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EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
27
2. Power-on reset circuit (Nch open-drain output product only)
A power-on reset circuit can be constructed using the S-1009N Series.
(Nch open-drain output product)
OUT
VIN
VSS
VDD
S-1009N
RA
*1
C
Di*2
(RA 100 k)
R
100 k
*1. R
A should be 100 k or less to prevent oscillation.
*2. Diode (Di) instantaneously discharges the charge stored in the capacitor (C) at the power falling. Di can be
removed when the delay of the falling time is not important.
Figure 30
VDD
[V]
t [s]
OUT
[V]
t [s]
Figure 31
Remark When the power rises sharply, the output may instantaneously be set to the "H" level due to the IC’s
indefinite area (the output voltage is indefinite when it is the IC’s minimum operation voltage or less),
as seen in Figure 32.
VDD
[V]
t [s]
OUT
[V]
t [s]
Figure 32
Caution 1. The above connection diagram and constant will not guarantee successful operation.
Perform thorough evaluation using the actual application to set the constant.
2. Note that the hysteresis width may be larger as the following equation shows when using the
above connection. Perform thorough evaluation using the actual application to set the
constant.
Maximum hysteresis width = VHYS RA 20 A
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
28
3. Change of detection voltage (Nch open-drain output product only)
If there is not a product with a specified detection voltage value in the S-1009N Series, the detection voltage can be
changed by using a resistance divider or a diode, as seen in Figure 33 and Figure 34.
In Figure 33, hysteresis width also changes.
(Nch open-drain
ouput product)
R
A*1
OUT
VIN
VSS
VDD
S-1009N
R
B
(R
A
100 k)
R
100 k
Detection voltage = RA RB
RB VDET
Hysteresis width = RA RB
RB VHYS
(Nch open-drain
output product)
V
f1
OUT
VIN
VSS
VDD
S-1009N
R
100 k
Detection voltage = Vf1 (VDET)
*1. RA should be 100 k or less to prevent oscillation.
Caution If RA and RB are large, the hysteresis width
may also be larger than the value given by
the above equation due to the feed-through
current.
Figure 33 Figure 34
Caution 1. The above connection diagram and constant will not guarantee successful operation.
Perform thorough evaluation using the actual application to set the constant.
2. Note that the hysteresis width may be larger as the following equation shows when using the
above connections. Perform thorough evaluation using the actual application to set the
constant.
Maximum hysteresis width = RA RB
RB VHYSRA 20 A
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
29
Marking Specifications
1. SOT-23-5
123
45
Top view
(1) (2) (3) (4)
(1) to (3): Product code (refer to Product name vs. Product code)
(4): Lot number
Product name vs. Product code
1. 1 Nch open-drain output product 1. 2 CMOS output product
Product Name Product Code Product Name Product Code
(1) (2) (3) (1) (2) (3)
S-1009N08I-M5T1U T 8 A S-1009C08I-M5T1U T 6 A
S-1009N09I-M5T1U T 8 B S-1009C09I-M5T1U T 6 B
S-1009N10I-M5T1U T 8 C S-1009C10I-M5T1U T 6 C
S-1009N11I-M5T1U T 8 D S-1009C11I-M5T1U T 6 D
S-1009N12I-M5T1U T 8 E S-1009C12I-M5T1U T 6 E
S-1009N13I-M5T1U T 8 F S-1009C13I-M5T1U T 6 F
S-1009N14I-M5T1U T 8 G S-1009C14I-M5T1U T 6 G
S-1009N15I-M5T1U T 8 H S-1009C15I-M5T1U T 6 H
S-1009N16I-M5T1U T 8 I S-1009C16I-M5T1U T 6 I
S-1009N17I-M5T1U T 8 J S-1009C17I-M5T1U T 6 J
S-1009N18I-M5T1U T 8 K S-1009C18I-M5T1U T 6 K
S-1009N19I-M5T1U T 8 L S-1009C19I-M5T1U T 6 L
S-1009N20I-M5T1U T 8 M S-1009C20I-M5T1U T 6 M
S-1009N21I-M5T1U T 8 N S-1009C21I-M5T1U T 6 N
S-1009N22I-M5T1U T 8 O S-1009C22I-M5T1U T 6 O
S-1009N23I-M5T1U T 8 P S-1009C23I-M5T1U T 6 P
S-1009N24I-M5T1U T 8 Q S-1009C24I-M5T1U T 6 Q
S-1009N25I-M5T1U T 8 R S-1009C25I-M5T1U T 6 R
S-1009N26I-M5T1U T 8 S S-1009C26I-M5T1U T 6 S
S-1009N27I-M5T1U T 8 T S-1009C27I-M5T1U T 6 T
S-1009N28I-M5T1U T 8 U S-1009C28I-M5T1U T 6 U
S-1009N29I-M5T1U T 8 V S-1009C29I-M5T1U T 6 V
S-1009N30I-M5T1U T 8 W S-1009C30I-M5T1U T 6 W
S-1009N31I-M5T1U T 8 X S-1009C31I-M5T1U T 6 X
S-1009N32I-M5T1U T 8 Y S-1009C32I-M5T1U T 6 Y
S-1009N33I-M5T1U T 8 Z S-1009C33I-M5T1U T 6 Z
S-1009N34I-M5T1U T 9 A S-1009C34I-M5T1U T 7 A
S-1009N35I-M5T1U T 9 B S-1009C35I-M5T1U T 7 B
S-1009N36I-M5T1U T 9 C S-1009C36I-M5T1U T 7 C
S-1009N37I-M5T1U T 9 D S-1009C37I-M5T1U T 7 D
S-1009N38I-M5T1U T 9 E S-1009C38I-M5T1U T 7 E
S-1009N39I-M5T1U T 9 F S-1009C39I-M5T1U T 7 F
S-1009N40I-M5T1U T 9 G S-1009C40I-M5T1U T 7 G
S-1009N41I-M5T1U T 9 H S-1009C41I-M5T1U T 7 H
S-1009N42I-M5T1U T 9 I S-1009C42I-M5T1U T 7 I
S-1009N43I-M5T1U T 9 J S-1009C43I-M5T1U T 7 J
S-1009N44I-M5T1U T 9 K S-1009C44I-M5T1U T 7 K
S-1009N45I-M5T1U T 9 L S-1009C45I-M5T1U T 7 L
S-1009N46I-M5T1U T 9 M S-1009C46I-M5T1U T 7 M
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
S-1009 Series Rev.5.1_03
30
2. SC-82AB
(1) (2) (3)
12
3
4
Top view
(1) to (3): Product code (refer to Product name vs. Product code)
Product name vs. Product code
2. 1 Nch open-drain output product 2. 2 CMOS output product
Product Name Product Code Product Name Product Code
(1) (2) (3) (1) (2) (3)
S-1009N08I-N4T1U T 8 A S-1009C08I-N4T1U T 6 A
S-1009N09I-N4T1U T 8 B S-1009C09I-N4T1U T 6 B
S-1009N10I-N4T1U T 8 C S-1009C10I-N4T1U T 6 C
S-1009N11I-N4T1U T 8 D S-1009C11I-N4T1U T 6 D
S-1009N12I-N4T1U T 8 E S-1009C12I-N4T1U T 6 E
S-1009N13I-N4T1U T 8 F S-1009C13I-N4T1U T 6 F
S-1009N14I-N4T1U T 8 G S-1009C14I-N4T1U T 6 G
S-1009N15I-N4T1U T 8 H S-1009C15I-N4T1U T 6 H
S-1009N16I-N4T1U T 8 I S-1009C16I-N4T1U T 6 I
S-1009N17I-N4T1U T 8 J S-1009C17I-N4T1U T 6 J
S-1009N18I-N4T1U T 8 K S-1009C18I-N4T1U T 6 K
S-1009N19I-N4T1U T 8 L S-1009C19I-N4T1U T 6 L
S-1009N20I-N4T1U T 8 M S-1009C20I-N4T1U T 6 M
S-1009N21I-N4T1U T 8 N S-1009C21I-N4T1U T 6 N
S-1009N22I-N4T1U T 8 O S-1009C22I-N4T1U T 6 O
S-1009N23I-N4T1U T 8 P S-1009C23I-N4T1U T 6 P
S-1009N24I-N4T1U T 8 Q S-1009C24I-N4T1U T 6 Q
S-1009N25I-N4T1U T 8 R S-1009C25I-N4T1U T 6 R
S-1009N26I-N4T1U T 8 S S-1009C26I-N4T1U T 6 S
S-1009N27I-N4T1U T 8 T S-1009C27I-N4T1U T 6 T
S-1009N28I-N4T1U T 8 U S-1009C28I-N4T1U T 6 U
S-1009N29I-N4T1U T 8 V S-1009C29I-N4T1U T 6 V
S-1009N30I-N4T1U T 8 W S-1009C30I-N4T1U T 6 W
S-1009N31I-N4T1U T 8 X S-1009C31I-N4T1U T 6 X
S-1009N32I-N4T1U T 8 Y S-1009C32I-N4T1U T 6 Y
S-1009N33I-N4T1U T 8 Z S-1009C33I-N4T1U T 6 Z
S-1009N34I-N4T1U T 9 A S-1009C34I-N4T1U T 7 A
S-1009N35I-N4T1U T 9 B S-1009C35I-N4T1U T 7 B
S-1009N36I-N4T1U T 9 C S-1009C36I-N4T1U T 7 C
S-1009N37I-N4T1U T 9 D S-1009C37I-N4T1U T 7 D
S-1009N38I-N4T1U T 9 E S-1009C38I-N4T1U T 7 E
S-1009N39I-N4T1U T 9 F S-1009C39I-N4T1U T 7 F
S-1009N40I-N4T1U T 9 G S-1009C40I-N4T1U T 7 G
S-1009N41I-N4T1U T 9 H S-1009C41I-N4T1U T 7 H
S-1009N42I-N4T1U T 9 I S-1009C42I-N4T1U T 7 I
S-1009N43I-N4T1U T 9 J S-1009C43I-N4T1U T 7 J
S-1009N44I-N4T1U T 9 K S-1009C44I-N4T1U T 7 K
S-1009N45I-N4T1U T 9 L S-1009C45I-N4T1U T 7 L
S-1009N46I-N4T1U T 9 M S-1009C46I-N4T1U T 7 M
0.27
A CURRENT CONSUMPTION VOLTAGE DETECTOR WITH DELAY FUNCTION
(
EXTERNAL DELAY TIME SETTING
)
Rev.5.1_03 S-1009 Series
31
3. SNT-4A
1
2
4
3
Top view
(1) (2) (3)
(1) to (3): Product code (refer to Product name vs. Product code)
Product name vs. Product code
3. 1 Nch open-drain output product 3. 2 CMOS output product
Product Name Product Code Product Name Product Code
(1) (2) (3) (1) (2) (3)
S-1009N08I-I4T1U T 8 A S-1009C08I-I4T1U T 6 A
S-1009N09I-I4T1U T 8 B S-1009C09I-I4T1U T 6 B
S-1009N10I-I4T1U T 8 C S-1009C10I-I4T1U T 6 C
S-1009N11I-I4T1U T 8 D S-1009C11I-I4T1U T 6 D
S-1009N12I-I4T1U T 8 E S-1009C12I-I4T1U T 6 E
S-1009N13I-I4T1U T 8 F S-1009C13I-I4T1U T 6 F
S-1009N14I-I4T1U T 8 G S-1009C14I-I4T1U T 6 G
S-1009N15I-I4T1U T 8 H S-1009C15I-I4T1U T 6 H
S-1009N16I-I4T1U T 8 I S-1009C16I-I4T1U T 6 I
S-1009N17I-I4T1U T 8 J S-1009C17I-I4T1U T 6 J
S-1009N18I-I4T1U T 8 K S-1009C18I-I4T1U T 6 K
S-1009N19I-I4T1U T 8 L S-1009C19I-I4T1U T 6 L
S-1009N20I-I4T1U T 8 M S-1009C20I-I4T1U T 6 M
S-1009N21I-I4T1U T 8 N S-1009C21I-I4T1U T 6 N
S-1009N22I-I4T1U T 8 O S-1009C22I-I4T1U T 6 O
S-1009N23I-I4T1U T 8 P S-1009C23I-I4T1U T 6 P
S-1009N24I-I4T1U T 8 Q S-1009C24I-I4T1U T 6 Q
S-1009N25I-I4T1U T 8 R S-1009C25I-I4T1U T 6 R
S-1009N26I-I4T1U T 8 S S-1009C26I-I4T1U T 6 S
S-1009N27I-I4T1U T 8 T S-1009C27I-I4T1U T 6 T
S-1009N28I-I4T1U T 8 U S-1009C28I-I4T1U T 6 U
S-1009N29I-I4T1U T 8 V S-1009C29I-I4T1U T 6 V
S-1009N30I-I4T1U T 8 W S-1009C30I-I4T1U T 6 W
S-1009N31I-I4T1U T 8 X S-1009C31I-I4T1U T 6 X
S-1009N32I-I4T1U T 8 Y S-1009C32I-I4T1U T 6 Y
S-1009N33I-I4T1U T 8 Z S-1009C33I-I4T1U T 6 Z
S-1009N34I-I4T1U T 9 A S-1009C34I-I4T1U T 7 A
S-1009N35I-I4T1U T 9 B S-1009C35I-I4T1U T 7 B
S-1009N36I-I4T1U T 9 C S-1009C36I-I4T1U T 7 C
S-1009N37I-I4T1U T 9 D S-1009C37I-I4T1U T 7 D
S-1009N38I-I4T1U T 9 E S-1009C38I-I4T1U T 7 E
S-1009N39I-I4T1U T 9 F S-1009C39I-I4T1U T 7 F
S-1009N40I-I4T1U T 9 G S-1009C40I-I4T1U T 7 G
S-1009N41I-I4T1U T 9 H S-1009C41I-I4T1U T 7 H
S-1009N42I-I4T1U T 9 I S-1009C42I-I4T1U T 7 I
S-1009N43I-I4T1U T 9 J S-1009C43I-I4T1U T 7 J
S-1009N44I-I4T1U T 9 K S-1009C44I-I4T1U T 7 K
S-1009N45I-I4T1U T 9 L S-1009C45I-I4T1U T 7 L
S-1009N46I-I4T1U T 9 M S-1009C46I-I4T1U T 7 M
No.
TITLE
UNIT
ANGLE
ABLIC Inc.
2.9±0.2
1.9±0.2
0.95±0.1
0.4±0.1
0.16 +0.1
-0.06
123
4
5
No. MP005-A-P-SD-1.3
MP005-A-P-SD-1.3
SOT235-A-PKG Dimensions
mm
No.
TITLE
UNIT
ANGLE
ABLIC Inc.
ø1.5 +0.1
-0 2.0±0.05
ø1.0 +0.2
-0 4.0±0.1 1.4±0.2
0.25±0.1
3.2±0.2
123
45
No. MP005-A-C-SD-2.1
MP005-A-C-SD-2.1
SOT235-A-Carrier Tape
Feed direction
4.0±0.1(10 pitches:40.0±0.2)
mm
No.
TITLE
UNIT
ANGLE
ABLIC Inc.
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 3,000
No. MP005-A-R-SD-1.1
MP005-A-R-SD-1.1
SOT235-A-Reel
Enlarged drawing in the central part
mm
No.
TITLE
UNIT
ANGLE
ABLIC Inc.
0.3 +0.1
-0.05
0.4 +0.1
-0.05
0.05
12
43
0.16 +0.1
-0.06
1.3±0.2
2.0±0.2
No. NP004-A-P-SD-2.0
SC82AB-A-PKG Dimensions
NP004-A-P-SD-2.0
mm
No.
TITLE
UNIT
ANGLE
ABLIC Inc.
1.1±0.1
0.2±0.05
4.0±0.1
2.0±0.05
4.0±0.1
2.2±0.2
(0.7)
No. NP004-A-C-SD-3.0
NP004-A-C-SD-3.0
SC82AB-A-Carrier Tape
Feed direction
12
34
ø1.05±0.1
ø1.5 +0.1
-0
mm
No.
TITLE
UNIT
ANGLE
ABLIC Inc.
No. NP004-A-C-S1-2.0
NP004-A-C-S1-2.0
SC82AB-A-Carrier Tape
4.0±0.1 2.0±0.1
4.0±0.1 ø1.05±0.1
0.2±0.05
1.1±0.1
Feed direction
2.3±0.15
12
34
ø1.5 +0.1
-0
mm
No.
TITLE
UNIT
ANGLE
ABLIC Inc.
QTY. 3,000
NP004-A-R-SD-1.1
SC82AB-A-Reel
mm
No. NP004-A-R-SD-1.1
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
Enlarged drawing in the central part
No.
TITLE
ANGLE
UNIT
ABLIC Inc.
mm
SNT-4A-A-PKG Dimensions
PF004-A-P-SD-6.0
No. PF004-A-P-SD-6.0
1.2±0.04
0.65
0.2±0.05
0.48±0.02
0.08+0.05
-0.02
12
3
4
No.
TITLE
ANGLE
UNIT
ABLIC Inc.
mm
PF004-A-C-SD-2.0
SNT-4A-A-Carrier Tape
Feed direction
4.0±0.1
2.0±0.05
4.0±0.1
ø1.5 +0.1
-0
ø0.5
1.45±0.1 0.65±0.05
0.25±0.05
1
2
34
No. PF004-A-C-SD-2.0
+0.1
-0
No.
TITLE
ANGLE
UNIT
ABLIC Inc.
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 5,000
No. PF004-A-R-SD-1.0
PF004-A-R-SD-1.0
Enlarged drawing in the central part
mm
SNT-4A-A-Reel
No.
TITLE
ANGLE
UNIT
ABLIC Inc.
mm
SNT-4A-A
-Land Recommendation
PF004-A-L-SD-4.1
No. PF004-A-L-SD-4.1
0.3
0.35
0.52
1.16
0.52
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1. (0.25 mm min. / 0.30 mm typ.)
2. (1.10 mm ~ 1.20 mm)
1
2
0.03 mm
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package (1.10 mm to 1.20 mm).
1.
2. (1.10 mm ~ 1.20 mm)
(0.25 mm min. / 0.30 mm typ.)
Disclaimers (Handling Precautions)
1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and
application circuit examples, etc.) is current as of publishing date of this document and is subject to change without
notice.
2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of
any specific mass-production design.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the reasons other than the products
described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other
right due to the use of the information described herein.
3. ABLIC Inc. is not liable for any losses, damages, claims or demands caused by the incorrect information described
herein.
4. Be careful to use the products within their ranges described herein. Pay special attention for use to the absolute
maximum ratings, operation voltage range and electrical characteristics, etc.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by failures and / or accidents, etc. due to
the use of the products outside their specified ranges.
5. Before using the products, confirm their applications, and the laws and regulations of the region or country where they
are used and verify suitability, safety and other factors for the intended use.
6. When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related
laws, and follow the required procedures.
7. The products are strictly prohibited from using, providing or exporting for the purposes of the development of
weapons of mass destruction or military use. ABLIC Inc. is not liable for any losses, damages, claims or demands
caused by any provision or export to the person or entity who intends to develop, manufacture, use or store nuclear,
biological or chemical weapons or missiles, or use any other military purposes.
8. The products are not designed to be used as part of any device or equipment that may affect the human body, human
life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control
systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment,
aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses by
ABLIC, Inc. Do not apply the products to the above listed devices and equipments.
ABLIC Inc. is not liable for any losses, damages, claims or demands caused by unauthorized or unspecified use of
the products.
9. In general, semiconductor products may fail or malfunction with some probability. The user of the products should
therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread
prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social
damage, etc. that may ensue from the products' failure or malfunction.
The entire system in which the products are used must be sufficiently evaluated and judged whether the products are
allowed to apply for the system on customer's own responsibility.
10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the
product design by the customer depending on the intended use.
11. The products do not affect human health under normal use. However, they contain chemical substances and heavy
metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be
careful when handling these with the bare hands to prevent injuries, etc.
12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used.
13. The information described herein contains copyright information and know-how of ABLIC Inc. The information
described herein does not convey any license under any intellectual property rights or any other rights belonging to
ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this
document described herein for the purpose of disclosing it to a third-party is strictly prohibited without the express
permission of ABLIC Inc.
14. For more details on the information described herein or any other questions, please contact ABLIC Inc.'s sales
representative.
15. This Disclaimers have been delivered in a text using the Japanese language, which text, despite any translations into
the English language and the Chinese language, shall be controlling.
2.4-2019.07
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