FQP11N40C, FQPF11N40C QFET) MOSFET, N-Channel 400 V, 10.5 A, 530 mW Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features * * * * * 10.5 A, 400 V, RDS(on) = 530 mW (Max.) @ VGS = 10 V, ID = 5.25 A Low Gate Charge (Typ. 28 nC) Low Crss (Typ. 85 pF) 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant www.onsemi.com G D G S TO-220-3LD CASE 340AT D S TO-220F-3SG CASE 221AT D G S ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2018 June, 2018 - Rev. 4 1 Publication Order Number: FQPF11N40C/D FQP11N40C, FQPF11N40C ORDERING INFORMATION Device Device Marking Package Shipping FQP11N40C FQP11N40C TO-220 (Pb-Free) 1,000 Units / Tube FQPF11N40C FQPF11N40C TO-220 Fullpack, TO-220F-3SG (Pb-Free) 1,000 Units / Tube MOSFET MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol VDSS ID IDM Parameter FQP11N40C FQPF11N40C 400 Drain to Source Voltage Drain Current -Continuous (TC = 25C) -Continuous (TC = 100C) Drain Current - Pulsed (Note 1) Unit V 10.5 10.5 * A 6.6 6.6 * A 42 42 * A Gate to Source Voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 360 mJ IAR Avalanche Current (Note 1) 11 A EAR Repetitive Avalanche Energy (Note 1) 13.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns VGSS PD TJ, TSTG TL Power Dissipation (TC = 25C) - Derate above 25C 135 44 W 1.07 0.35 W/C Operating and Storage Temperature Range -55 to 150 C 300 C Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. L = 5.7 mH, IAS = 10.5 A, VDD = 50 V, RG = 25 W, starting TJ = 25C. 3. ISD 10.5 A, di/dt 200 A/ms, VDD BVDSS, starting TJ = 25C. THERMAL CHARACTERISTICS Symbol Parameter FQP11N40C FQPF11N40C Unit RqJC Thermal Resistance, Junction to Case, Max 0.93 2.86 C/W RqJA Thermal Resistance, Junction to Ambient, Max 62.5 62.5 C/W www.onsemi.com 2 FQP11N40C, FQPF11N40C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Test Conditions Parameter Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 mA BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25C Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V IDSS 400 V 0.54 V/C 1 mA 10 mA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -100 nA 4.0 V 0.53 W VDS = 320 V, TC = 125C On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA rDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.25 A 0.43 Forward Transconductance VDS = 40 V, ID = 5.25 A 7.1 gFS 2.0 s Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz 840 1090 pF 250 325 pF 85 110 pF 14 40 ns 89 190 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 81 170 ns tf Turn-Off Fall Time 81 170 ns Qg Total Gate Charge 28 35 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 200 V, ID = 10.5 A, RG = 25 W (Note 4) VDS = 320 V, ID = 10.5 A, RG = 25 W (Note 4) 4 nC 15 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 10.5 A VGS = 0 V, IS = 10.5 A, dIF/dt = 100 A/ms 10.5 A 42 A 1.4 V 290 ns 2.4 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature. www.onsemi.com 3 FQP11N40C, FQPF11N40C TYPICAL PERFORMANCE CHARACTERISTICS VGS Top : 1 ID, Drain Current [A] 10 150_C ID, Drain Current [A] 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 -55_C 25_C Notes : 1. 250ms Pulse Test 2. TC = 25_C Notes : 1. VDS = 40V 2. 250ms Pulse Test -1 10 0 1 10 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics IDR, Reverse Drain Current [A] RDS(ON) [W], Drain-Source On-Resistance 2.0 VGS = 10 V 1.5 1.0 VGS = 20 V 0.5 1 10 0 10 150_C Notes : 1. VGS = 0V 25_C 2. 250ms Pulse Test Note : TJ = 25_C -1 10 0 5 10 15 20 25 30 35 0.2 40 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2000 12 Ciss = Cgs + Cgd (Cds = shorted) 1800 Coss = Cds + Cgd Capacitance [pF] 1400 VGS, Gate-Source Voltage [V] Crss = Cgd 1600 Ciss 1200 Coss 1000 800 600 Notes ; 1. VGS = 0 V Crss 2. f = 1 MHz 400 VDS = 100 V 10 VDS = 250 V 8 VDS = 400 V 6 4 2 200 0 -1 10 Note : ID= 10.5 A 0 0 10 0 1 10 5 10 15 20 25 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 30 FQP11N40C, FQPF11N40C TYPICAL PERFORMANCE CHARACTERISTICS 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. I D = 250 mA 0.9 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 0.5 2. ID = 5.25 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 TJ, Junction Temperature [_C] 50 100 150 Operation in This Area is Limited by RDS(on) 2 10 10 ms ID, Drain Current [A] ID, Drain Current [A] 10 ms 100 ms 1 ms 1 10 10 ms 100 ms DC 0 10 Notes : 1. TC = 25_C 1 1 ms 10 10 ms 100 ms DC 0 10 Notes : 1. TC = 25 _C 2. TJ = 15_C 3. Single Pulse 3. Single Pulse -1 10 0 1 10 2 10 3 10 10 8 6 4 2 75 100 125 2 10 150 TC, Case Temperature [C] Figure 11. Maximum Drain Current www.onsemi.com 5 3 10 Figure 10. Maximum Safe Operating Area of FQPF11N40C 12 50 1 10 VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area of FQP11N40C 0 25 0 10 10 VDS, Drain-Source Voltage [V] ID, Drain Current [A] 100 ms 2. TJ = 150 _C -1 10 200 Figure 8. On-Resistance Variation vs. Temperature Operation in This Area is Limited by RDS(on) 2 0 TJ, Junction Temperature [_C] Figure 7. Breakdown Voltage Variation vs. Temperature 10 -50 FQP11N40C, FQPF11N40C TYPICAL PERFORMANCE CHARACTERISTICS 0 D=0.5 0.2 10 Notes: 1. ZqJC(t) = 0.93C/W Max. 0.1 -1 2. Duty Factor, D = t1/t2 0.05 3. TJM - TC = PDM * ZqJC(t) 0.02 0.01 JC ZqJC Response [oC/W] Z (t),(t),Thermal Thermal Response 10 PDM single pulse 10 t1 -2 10 t2 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , Square W ave Pulse Duration [sec] D=0.5 10 0 Notes: 0.2 1. ZqJC(t) = 2.86C/W Max. 0.1 2. Duty Factor, D = t1/t2 0.05 10 3. TJM - TC = PDM * ZqJC(t) -1 0.02 0.01 PDM JC ZqJC Thermal Response [oC/W] Z (t),(t), Thermal Response Figure 12. Transient Thermal Response Curve of FQP11N40C t1 t2 single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , Square W ave Pulse Duration [sec] Figure 13. Transient Thermal Response Curve of FQPF11N40C www.onsemi.com 6 10 1 FQP11N40C, FQPF11N40C VGS Same Type as DUT 50K Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 14. Gate Charge Test Circuit & Waveform VDS RL VDS 90% VDD VGS RG VGS DUT V 10V GS 10% tr td(on) td(off) t on tf t off Figure 15. Resistive Switching Test Circuit & Waveforms L EAS = VDS BV DSS BVDSS -VDD BVDSS IAS ID RG V 10V GS 1 LI AS2 2 VDD ID (t) VDS (t) VDD DUT tp tp Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FQP11N40C, FQPF11N40C DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD Sdv/dtcontrolled by R G SI SD controlled by pulse period Gate Pulse Width D = -------------------------- Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recoverydv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms All other brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-220 Fullpack, 3-Lead / TO-220F-3SG CASE 221AT ISSUE A DOCUMENT NUMBER: STATUS: NEW STANDARD: 98AON67439E ON SEMICONDUCTOR STANDARD October, DESCRIPTION: 2002 - Rev. 0 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. http://onsemi.com TO-220 FULLPACK, 3-LEAD / 1TO-220F-3SG (c) Semiconductor Components Industries, LLC, 2002 DATE 12 NOV 2013 Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT NUMBER: 98AON67439E PAGE 2 OF 2 ISSUE REVISION DATE O RELEASED FOR PRODUCTION FROM SANYO ENACT# TC-00001530 TO ON SEMICONDUCTOR. REQ. BY D. TRUHITTE. 29 FEB 2012 A CORRECTED PACKAGE NAME FROM TO-220F-3FG TO TO-220F-3SG. REQ. BY T. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. (c) Semiconductor Components Industries, LLC, 2013 November, 2013 - Rev. A Case Outline Number: 221AT MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-220-3LD CASE 340AT ISSUE A DATE 03 OCT 2017 DOCUMENT NUMBER: STATUS: 98AON13818G ON SEMICONDUCTOR STANDARD NEW STANDARD: (c) Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 - Rev. 0 TO-220-3LD http://onsemi.com 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT7NUMBER: 98AON13818G PAGE 2 OF 2 ISSUE REVISION DATE O RELEASED FOR PRODUCTION FROM FAIRCHILD TO220B03 TO ON SEMICONDUCTOR. REQ. BY B. NG. 30 SEP 2016 A CHANGED NOTE I LABEL TO NOTE H IN BACK VIEW. REQ. BY H. 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