FQP11N40C - ON SEMICONDUCTOR

June, 2018 − Rev. 4 1Publication Order Number:

FQPF11N40C/D

FQP11N40C, FQPF11N40C

QFET) MOSFET, N-Channel

400 V, 10.5 A, 530 mW

Description

This N−Channel enhancement mode power MOSFET is produced

using ON Semiconductor proprietary planar stripe and DMOS

technology. This advanced MOSFET technology has been especially

tailored to reduce on−state resistance, and to provide superior

switching performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies, active power

factor correction (PFC), and electronic lamp ballasts.

Features

•10.5 A, 400 V, RDS(on) = 530 mW (Max.) @ VGS = 10 V, ID = 5.25 A

•Low Gate Charge (Typ. 28 nC)

•Low Crss (Typ. 85 pF)

•100% Avalanche Tested

•These Devices are Pb−Free and are RoHS Compliant

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See detailed ordering, marking and shipping information on

page 2 of this data sheet.

ORDERING INFORMATION

TO−220−3LD

CASE 340AT

GDS

TO−220F−3SG

CASE 221AT

GDS

FQP11N40C, FQPF11N40C

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ORDERING INFORMATION

Device Device Marking Package Shipping

FQP11N40C FQP11N40C TO−220

(Pb−Free) 1,000 Units / Tube

FQPF11N40C FQPF11N40C TO−220 Fullpack, TO−220F−3SG

(Pb−Free) 1,000 Units / Tube

MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Symbol Parameter FQP11N40C FQPF11N40C Unit

VDSS Drain to Source Voltage 400 V

IDDrain Current −Continuous (TC = 25°C)

−Continuous (TC = 100°C) 10.5 10.5 * A

6.6 6.6 * A

IDM Drain Current − Pulsed (Note 1) 42 42 * A

VGSS Gate to Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 360 mJ

IAR Avalanche Current (Note 1) 11 A

EAR Repetitive Avalanche Energy (Note 1) 13.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PDPower Dissipation (TC = 25°C)

− Derate above 25°C135 44 W

1.07 0.35 W/°C

TJ, TSTG Operating and Storage Temperature Range −55 to 150 °C

TLMaximum Lead Temperature for Soldering Purpose, 1/8” from Case for

5 Seconds 300 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be af fected.

*Drain current limited by maximum junction temperature

1. Repetitive Rating : Pulse width limited by maximum junction temperature.

2. L = 5.7 mH, IAS = 10.5 A, VDD = 50 V, RG = 25 W, starting TJ = 25°C.

3. ISD ≤ 10.5 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting TJ = 25°C.

THERMAL CHARACTERISTICS

Symbol Parameter FQP11N40C FQPF11N40C Unit

RqJC Thermal Resistance, Junction to Case, Max 0.93 2.86 °C/W

RqJA Thermal Resistance, Junction to Ambient, Max 62.5 62.5 °C/W

FQP11N40C, FQPF11N40C

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Unit

Off Characteristics

BVDSS Drain−Source Breakdown Voltage VGS = 0 V, ID = 250 mA400 V

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature Coefficient ID = 250 mA, Referenced to 25°C0.54 V/°C

IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V 1mA

VDS = 320 V, TC = 125°C10 mA

IGSSF Gate−Body Leakage Current, Forward VGS = 30 V, VDS = 0 V 100 nA

IGSSR Gate−Body Leakage Current, Reverse VGS = −30 V, VDS = 0 V −100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 mA2.0 4.0 V

rDS(on) Static Drain−Source On−Resistance VGS = 10 V, ID = 5.25 A 0.43 0.53 W

gFS Forward Transconductance VDS = 40 V, ID = 5.25 A 7.1 s

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz 840 1090 pF

Coss Output Capacitance 250 325 pF

Crss Reverse Transfer Capacitance 85 110 pF

Switching Characteristics

td(on) Turn−On Delay Time VDD = 200 V, ID = 10.5 A, RG = 25 W

(Note 4)

14 40 ns

trTurn−On Rise Time 89 190 ns

td(off) Turn−Off Delay Time 81 170 ns

tfTurn−Off Fall Time 81 170 ns

QgTotal Gate Charge VDS = 320 V, ID = 10.5 A, RG = 25 W

(Note 4) 28 35 nC

Qgs Gate−Source Charge 4 nC

Qgd Gate−Drain Charge 15 nC

Drain−Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain−Source Diode

Forward Current 10.5 A

ISM Maximum Pulsed Drain−Source Diode

Forward Current 42 A

VSD Drain−Source Diode Forward Voltage VGS = 0 V, IS = 10.5 A 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 10.5 A,

dIF/dt = 100 A/ms

290 ns

Qrr Reverse Recovery Charge 2.4 mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Essentially independent of operating temperature.

FQP11N40C, FQPF11N40C

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TYPICAL PERFORMANCE CHARACTERISTICS

Figure 1. On−Region Characteristics

100101

10−1

100

101

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

Notes :

1. 250ms Pulse Test

2. TC = 25_C

ID, Drain Current [A]

VDS, Drain−Source Voltage [V]

Figure 2. Transfer Characteristics

150_C

25_C−55_C

Notes :

1. VDS = 40V

2. 250ms Pulse Test

ID, Drain Current [A]

VGS, Gate−Source Voltage [V]

Figure 3. On−Resistance Variation vs Drain Current

and Gate Voltage

0 5 10 15 20 25 30 35 40

0.5

1.0

1.5

2.0

VGS = 20 V

VGS = 10 V

Note : T

J = 25_C

RDS(ON) [],

Drain−Source On−Resistance

ID, Drain Current [A]

Figure 4. Body Diode Forward Voltage Variation vs.

Source Current and Temperature

0.2 0.4 0.6 0.8 1.0 1.2 1.4

10−1

100

101

150_C

Notes :

1. VGS = 0V

2. 250ms Pulse Test

25_C

IDR, Reverse Drain Current [A]

VSD, Source−Drain voltage [V]

Figure 5. Capacitance Characteristics

10−1 100101

200

400

600

800

1000

1200

1400

1600

1800

2000 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

Notes ;

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain−Source Voltage [V ]

Figure 6. Gate Charge Characteristics

051015202530

VDS = 250 V

VDS = 100 V

VDS = 400 V

Note : ID

= 10.5 A

VGS, Gate−Source Voltage [V]

QG, Total Gate Charge [nC]

FQP11N40C, FQPF11N40C

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TYPICAL PERFORMANCE CHARACTERISTICS

Figure 7. Breakdown Voltage Variation vs.

Temperature

−100 −50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

Notes :

1. VGS = 0 V

2. I

BVDSS, (Normalized)

Drain−Source Breakdown Voltage

TJ, Junction Temperature [_C]

D= 250 mA

Figure 8. On−Resistance Variation vs. Temperature

−100 −50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :

1. VGS = 10 V

2. ID = 5.25 A

RDS(ON) , (Normalized)

Drain−Source On−Resistance

TJ, Junction Temperature [_C]

Figure 9. Maximum Safe Operating Area of

FQP11N40C

100101102103

10−1

100

101

102

100 ms

10 ms

1 ms

Operation in This Area

is Limited by RDS(on)

Notes :

1. TC = 25_C

2. TJ = 150_C

3. Single Pulse

ID, Drain Current [A]

VDS, Drain−Source Voltage [V]

10 ms

100 ms

Figure 10. Maximum Safe Operating Area of

FQPF11N40C

100101102103

10−1

100

101

102

100 ms

10 ms

1 ms

Operation in This Area

is Limited by RDS(on)

Notes :

1. TC = 25

2. TJ = 15_C

3. Single Pulse

ID, Drain Current [A]

VDS, Drain−Source Voltage [V]

10 ms

100 ms

Figure 11. Maximum Drain Current

25 50 75 100 125 150

ID, Drain Current [A]

TC, Case Tem perature [°C]

FQP11N40C, FQPF11N40C

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TYPICAL PERFORMANCE CHARACTERISTICS

Figure 12. Transient Thermal Response Curve of FQP11N40C

10 −5 10 −4 10 −3 10 −2 10 −1 10 010 1

10 −2

10 −1

10 0

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZJC(t), Thermal Response

t1, Square W ave Pulse Duration [sec]

PDM

ZqJC(t), Thermal Response [oC/W]

Notes:

1. ZqJC(t) = 0.93°C/W Max.

2. Duty Factor, D = t1/t2

3. TJM − TC = PDM * ZqJC(t)

Figure 13. Transient Thermal Response Curve of FQPF11N40C

10 −5 10 −4 10 −3 10 −2 10 −1 10 010 1

10 −2

10 −1

10 0

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZJC

(t), Thermal Response

t1, Square W ave Pulse Duration [sec]

PDM

ZqJC(t), Thermal Response [oC/W]

Notes:

1. ZqJC(t) = 2.86°C/W Max.

2. Duty Factor, D = t1/t2

3. TJM − TC = PDM * ZqJC(t)

FQP11N40C, FQPF11N40C

www.onsemi.com

Figure 14. Gate Charge Test Circuit & Waveform

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

VGS

10V Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

IG = const.

Figure 15. Resistive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS RL

DUT

VGS

Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms

EAS =LI

AS2

1BVDSS −VDD

BVDSS

VDD

VDS

BVDSS

VDD

IAS

VDS (t)

ID(t)

Time

10V DUT

EAS AS2

EAS =AS2

1BVDSS −VDD

BVDSS

VDD

VDS

BVDSS

VDD

IAS

VDS (t)

ID(t)

Time

10V DUT

VGS

FQP11N40C, FQPF11N40C

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Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

RGSame Type

as DUT

VGS Sdv/dtcontrolled by R G

SISD controlled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recoverydv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

−−−−−−−−−−−−−−−−−−−−−−−−−−

DUT

VDS

Driver

RGSame Type

as DUT

VGS Sdv/dtcontrolled by R G

SISD controlled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recoverydv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

−−−−−−−−−−−−−−−−−−−−−−−−−−

D = Gate Pulse Width

Gate Pulse Period

−−−−−−−−−−−−−−−−−−−−−−−−−−

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TO−220 Fullpack, 3−Lead / TO−220F−3SG

CASE 221AT

ISSUE A

DATE 12 NOV 2013

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

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