1.9
0.950.951.0
2. 4
1. 3
2.9
0.4
SOT-23 Plastic-Encapsulated Diodes
1SS181 SWITCHING DIODE
FEATURES
Power dissipation
PD : 150 mW(Tamb=25℃)
Forward Current
IF : 100 m A
Reverse Voltage
VR: 80 V
Operating and storage junction temperature range
TJ,Tstg: -55 ℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 100µA 80 V
Reverse voltage leakage current IR V
R=80V 0.5
µA
Forward voltage VF IF=100mA 1.2 V
Diode capacitance CD V
R=0V f=1MHz 4 pF
Reverse recovery time t r r 4
nS
Unit: mm
SOT -23
Mar ki ng A3
Transys
Electronics
LI
M
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