MMBT3904T — NPN Epitaxial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3904T Rev. 1.0.0 1
February 2008
MMBT3904T
NPN Epitaxial Silicon Transistor
Features
• General purpose amplifier transistor.
• Ultra-Small Surface Mount Package for all types.
• Suitable for general switching & amplification
• Well suited for portable application
•As complementary type, PNP MMBT3906T is recommended
Absolute Maximum Ratings Ta = 25°C unless otherwi se noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* Ta=25°C unless otherwise noted
* Minimum land pad.
Electrical Characteristics* Ta=25°C unless otherwise note d
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 200 mA
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -55 ~ 150 °C
Symbol Parameter Max Unit
PCCollector Power Dissipation, by RθJA 250 mW
RθJA Thermal Resistance, Junction to Ambient 500 °C/W
Symbol Parameter Test Condition Min. Max. Unit
BVCBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 60 V
BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 40 V
BVEBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 6 V
ICEX Collector Cut-off Current VCE = 60V, VEB(OFF) = 3V 50 nA
hFE DC Current Gain VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 50mA
VCE = 1V, IC = 100mA
40
70
100
60
30
300
VCE (sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA 0.2
0.3 V
V
VBE (sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA 0.65 0.85
0.95 V
V
fTCurrent Gain Bandwidth Product VCE = 20V, IC = 10mA, f = 100MHz 300 MHz
Cob Output Capacitance VCB = 5V, IE = 0, f = 1MHz 6pF
Cib Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 15 pF
tdDelay Time VCC = 3V, IC = 10mA
IB1 =- IB2 = 1mA 35 ns
trRise Time 35 ns
tsStorage Time 200 ns
tfFall Ti me 50 ns
SOT-523F
Marking : A04
B
C
E
MMBT3904T — NPN Epitaxial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3904T Rev. 1.0.0 2
Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base- Emitter Saturation Voltage Figure 4. Collector- Base Leakage Current
Figure 5. Collector- Base Capacitance Figure 6. Power Derating
1 10 100 1000
10
100
Vce=1V
TJ=25 oC
TJ=75 oC
TJ=125 oC
TJ=-25 oC
Current Gain
Collector Current, [mA]
10 100
100
1000 Ic=10*Ib
TJ=25 oC
TJ=75 oC
TJ=125 oC
TJ=-25 oC
Collector-E m itter V o ltag e ,[m V ]
Collector Current, [mA]
10 100
100
1000
Ic=10*Ib
TJ=-25 oC
TJ=25 oC
TJ=75 oC
TJ=125 oC
Base- Emitter V oltage,[mV ]
Co lle c to r Cu rr e n t, [mA ] 10 20 30 40 50 60
1
10
100
1000
TJ=-25 oC
TJ=25 oC
TJ=75 oC
TJ=125 oC
Base-Collector Leakage Current,[nA]
Base-Collector Revere Voltage, [V]
0510
4
5
5
6
6
7
7
f=1mhz
Base- Collector Juntion Capacitance, Cob[pF]
Base- Collector Reverse Voltage, Vcb[V]
0 25 50 75 100 125 150
0
50
100
150
200
250
300
Power Dissipation, [mW]
Ambient Temperature, Ta[oC]
MMBT3904T — NPN Epitaxial Silicon Transistor
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3904T Rev. 1.0.0 3
Package Dimensions
SOT-523F
• Case : SOT-523F
• Case Material(Molded Plastic): KTMC1060SC
• UL Flammability classification rating : “V0”
• Moisture Sensitivity level per JESD22-A1113B : MSL 1
• Lead terminals solderable per MIL-STD7502026 /JESD22A121
• Lead Free Plating : Pure Tin(Matte)
Dimensions in Millimeters
MMBT3904T NPN Epitaxial Silicon TransistorMMBT3904T
© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBT3904T Rev. 1.0.0 4
Rev. I31
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when properly used in accordance with instructions for use
provided in the labeling, can be reasona bly expected to result
in significant injury to the us er .
2. A critical component is any component of a life support
device or s ystem whose failure t o perform can be reasonably
expected to cause the failure of the life support device or
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PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FPS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP-SPM™
Power220®
Power247®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmabl e Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
UniFET™
VCX™
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary dat a will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production This dat asheet contains final specifications . Fairchild Semicond uctor reserves
the right to make changes at any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semic onductor. The datasheet is printed for reference infor-
mation only.
